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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 C

Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out.

Niedra, Janis M.↗
NASA NTRS2006

Junction-to-Case Thermal Resistance of a Silicon Carbide Bipolar Junction Transistor Measured

Junction temperature of a prototype SiC-based bipolar junction transistor (BJT) was estimated by using the base-emitter voltage (V(sub BE)) characteristic for thermometry. The V(sub BE) was measured as a function of the base current (I(sub B)) at selected temperatures (T), all at a fixed collector current (I(sub C)) and under very low duty cycle pulse conditions. Under such conditions, the average temperature of the chip was taken to be the same as that of the temperature-controlled case. At increased duty cycle such as to substantially heat the chip, but same I(sub C) pulse height, the chip temperature was identified by matching the V(sub BE) to the thermometry curves. From the measured average power, the chip-to-case thermal resistance could be estimated, giving a reasonable value. A tentative explanation for an observed bunching with increasing temperature of the calibration curves may relate to an increasing dopant atom ionization. A first-cut analysis, however, does not support this.

Niedra, Janis M.↗
NASA NTRS2007

Total Dose Effects on Error Rates in Linear Bipolar Systems

The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect SET system error rates in a radiation environment. If the transients are broadened by TID, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance.

Buchner, Stephen↗
NASA NTRS2009

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Radisic, Vesna↗
NASA NTRS2004

Electrodeionization Using Microseparated Bipolar Membranes

An electrochemical technique for deionizing water, now under development, is intended to overcome a major limitation of prior electrically-based water-purification techniques. The limitation in question is caused by the desired decrease in the concentration of ions during purification: As the concentration of ions decreases, the electrical resistivity of the water increases, posing an electrical barrier to the removal of the remaining ions. In the present technique, this limitation is overcome by use of electrodes, a flowfield structure, and solid electrolytes configured to provide conductive paths for the removal of ions from the water to be deionized, even when the water has already been purified to a high degree. The technique involves the use of a bipolar membrane unit (BMU), which includes a cation-exchange membrane and an anion-exchange membrane separated by a nonconductive mesh that has been coated by an ionically conductive material (see figure). The mesh ensures the desired microseparation between the ion-exchange membranes: The interstices bounded by the inner surfaces of the membranes and the outer surfaces of the coated mesh constitute a flow-field structure that allows the water that one seeks to deionize (hereafter called "process water" for short) to flow through the BMU with a low pressure drop. The flow-field structure is such that the distance between any point in the flow field and an ionically conductive material is small; thus, the flow-field structure facilitates the diffusion of molecules and ions to and from the ion-exchange membranes. The BMU is placed between an anode and a cathode, but not in direct contact with these electrodes. Instead, the space between the anion-exchange membrane and the anode is denoted the anode compartment and is filled with an ionic solution. Similarly, the space between the cation-exchange membrane and the cathode is denoted the cathode compartment and is filled with a different ionic solution. The electrodes are made of titanium coated with platinum.

Lyons, Donald↗
NASA NTRS2012

Evaluation of Enhanced Low Dose Rate Sensitivity in Discrete Bipolar Junction Transistors

We evaluate the low dose rate sensitivity in several families of discrete bipolar transistors across device parameter, quality assurance level, and irradiation bias configuration. The 2N2222 showed the most significant low dose rate sensitivity, with low dose rate enhancement factor of 3.91 after 100 krad(Si). The 2N2907 also showed critical degradation levels. The devices irradiated at 10 mrad(Si)/s exceeded specifications after 40 and 50 krad(Si) for the 2N2222 and 2N2907 devices, respectively.

Chen, Dakai↗
NASA NTRS2012

Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

linear integrated circuits↗
NASA NTRS2013

The Meteorology of Storms that Produce Narrow Bipolar Events

Narrow Bipolar Events (NBEs) are compact intracloud discharges that produce the most powerful lightning‐related radio frequency signals that have been observed. However, their luminosity is below the threshold for detectability from current and past spaceborne optical sensors. NBEs have been loosely associated with convective intensity, but their occurrence tends to be highly localized in time and space within a thunderstorm, and there remain many questions about whether and to what extent they are significantly related to meteorological processes within thunderstorms. Using the North Alabama Lightning Mapping Array (NALMA), the National Lightning Detection Network, and available Doppler and polarimetric radar data, case studies will be presented for storm events that produced large numbers of NBEs (~10s‐100s) during their lifetimes. NBEs are documented via a method that identifies high peak power (>40‐50 dBW) initial VHF sources within a specific altitude band in the upper levels of thunderstorms. The production of NBEs, including spatial and temporal variability, will be compared to the radar‐inferred kinematic and microphysical structure and evolution of thunderstorms, as well as their NALMA‐ and NLDN‐inferred electrical characteristics. The results should provide new insights into the relationships between NBEs and thunderstorm processes.

Lang, Timothy J.↗
NASA NTRS2013

The Meteorology of Storms that Produce Narrow Bipolar Events

Narrow Bipolar Event's (NBE) are compact (< 2 km), powerful (> 10 kW in VHF), and impulsive (approx 10 micro s) electrical discharges in thunderstorms, also known as compact intracloud discharges (CIDs). Can be either positive or negative polarity and have distinctive broadband waveform signatures sometimes confused for +CGs in the past by NLDN and other networks. NBEs are related to lightning but are likely optically "dark". As revealed by VHF sensors (both satellite and ground): (1) The most powerful lightning-­‐related VHF sources observed (2) Tend to occur at the beginning of intracloud discharges (3) Difficult to estimate altitude properly due to receiver saturation.

Lang, Timothy↗
NASA NTRS2011

Dose Rate Effects in Linear Bipolar Transistors

Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.

linear integrated circuit↗
NASA NTRS2017

Bipolar Electrode Sample Preparation Devices

An analyte selection device can include: a body defining a fluid channel having a channel inlet and channel outlet; a bipolar electrode (BPE) between the inlet and outlet; one of an anode or cathode electrically coupled with the BPE on a channel inlet side of the BPE and the other of the anode or cathode electrically coupled with the BPE on a channel outlet side of the BPE; and an electronic system operably coupled with the anode and cathode so as to polarize the BPE. The fluid channel can have any shape or dimension. The channel inlet and channel outlet can be longitudinal or lateral with respect to the longitudinal axis of the channel. The BPE can be any metallic member, such as a flat plate on a wall or mesh as a barrier BPE. The anode and cathode can be located at a position that polarizes the BPE.

Wang, Yi↗
NASA NTRS2018

Birth of a Bipolar Active Region in a Small Coronal Hole

We report on an the emergence of an anemone active region in a very small coronal hole (about 120'' across), beginning at approximately 19:00 UT on March 3, 2016. The emergence was initially observed by an amateur astronomer (RW) in an H-alpha movie from the Global Oscillation Network Group (GONG); it attracted the attention of the observer because there was no active region at the site of the H-alpha brightening. To examine the region in detail, we use data from the Solar Dynamics Observatory (SDO), provided by the Atmospheric Imaging Assembly (AIA) in wavelengths 193 Å, 211 Å, 304 Å, and 94 Å, and with the Helioseismic and Magnetic Imager (HMI). Data analysis and calibration activities such as scaling, rotation so that north is up, and removal of solar rotation are accomplished with SunPy. The emergence seen in HMI data begins with the appearance of a bipole close to the center of the coronal hole, followed by the appearance and growth of a coronal anemone in AIA-EUV images; as the emergence proceeds, the anemone fills the coronal hole in AIA wavelengths. The interchange reconnection of the emerging closed field with ambient open field builds the anemone and shifts the coronal hole from one side of the anemone to the other. Eventually, a sunspot forms in one foot of the emerging field. To date, studies of observations with SDO of anemone emergence in on-disk coronal holes are rare. This bipolar flux emergence episode fits well with the standard picture for the production of coronal-anemone regions.

Adams, Mitzi↗
NASA NTRS2019

A CME-Producing Solar Eruption from the Interior of an Emerging Bipolar Active Region

In a negative-polarity coronal hole, magnetic flux emergence, seen by the Solar Dynamics Observatory's {SDO) Helioseismic Magnetic lmager (HMI), begins at approximately 19:00 UT on March 3, 2016. The emerged magnetic field produced sunspots, which NOAA numbered 12514 two days later. The emerging magnetic field is largely bipolar with the opposite-polarity fluxes spreading apart overall, but there is simultaneously some convergence and cancellation of opposite-polarity flux at the polarity inversion line (PIL) inside the emerging bipole. In the first fifteen hours after emergence onset, three obvious eruptions occur, observed in the coronal EUV images from SDO's Atmospheric Imaging Assembly (AIA). The first two erupt from separate segments of the external PIL between the emerging positve-polarity flux and the extant surrounding negative-polarity flux, with the exploding magnetic field being prepared and triggered by flux cancellation at the external PIL. The emerging bipole shows obvious overall left-handed shear and/or twist in its magnetic field. The focus of th is poster is the third and largest eruption, which comes from inside the emerging bipole and blows it open to produce a CME observed by SOHO/LASCO. That eruption is preceded by flux cancellation at the emerging bipole's interior PIL, cancellation that plausibly builds a sheared and twisted flux rope above the interior PIL and finally triggers the blow-out eruption of the flux rope via photospheric-convection•driven slow tether-cutting reconnection of the legs of the sheared core field, low above the interior PIL, as proposed by van Ballegooijen & Martens (1989) and Moore & Roumeliotis (1992). The production of this eruption is a (perhaps rare) counterexample to solar eruptions that result from external collisional shearing between opposite polarities from two distinct emerging and/or emerged bipoles (Chintzoglou et al. 2019).

Adams, M. L.↗
DOE OSTI2023

Bipolar transistor structure with collector on polycrystalline isolation layer and methods to form same

Embodiments of the disclosure provide a bipolar transistor structure with a collector on a polycrystalline isolation layer. A polycrystalline isolation layer may be on a substrate, and a collector layer may be on the polycrystalline isolation layer. The collector layer has a first doping type and includes a polycrystalline semiconductor. A base layer is on the collector layer and has a second doping type opposite the first doping type. An emitter layer is on the base layer and has the first doping type. A material composition of the doped collector region is different from a material composition of the base layer.

Holt, Judson R.↗