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At least 289 records · Page 16

Smeared spin-flop transition in random antiferromagnetic Ising chain

At T = 0 and in a sufficiently large field, the nearest-neighbor antiferromagnetic Ising chain undergoes a first-order spin-flop transition into the ferromagnetic phase. We consider its smearing under the random-bond disorder such that all independent random bonds are antiferromagnetic (AF). It is shown that the ground-state thermodynamics of this random AF chain can be described exactly for an arbitrary distribution P(J) of AF bonds. Moreover, the site magnetizations of finite chains can be found analytically in this model. We consider a continuous P(J) that is zero above some -J{sub 1} and behaves near it as (-J{sub 1}-J){sup {lambda}}, {lambda} > -1. In this case, the ferromagnetic phase emerges continuously in a field H > H{sub c} = 2J{sub 1}. At 0 > {lambda} > -1, it has the usual second-order anomalies near H{sub c} with the critical indices obeying the scaling relation and depending on {lambda}. At {lambda} > 0, higher-order transitions occur (third, fourth, etc.), marked by a divergence of the corresponding nonlinear susceptibilities. In the chains with an even number of spins, the intermediate 'bow-tie' phase with linearly modulated AF order exists between the AF and ferromagnetic phases at J{sub 1} < H < H{sub c}. Its origin can be traced to the infinite correlation length of the degenerate AF phase from which it emerges. This implies the existence of similar inhomogeneous phases with size- and form-dependent order in a number of other systems with infinite correlation length. The possibility to observe the signs of the 'bow-tie' phase in low-T neutron diffraction experiments is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Self-Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe 2 layers in an ultra-high vacuum-free 2D magnetic crystal, Cr 5 Te 8 is reported. By self-introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau-like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe 2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. Here this work represents a new route to engineering low-power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism.

36 MATERIALS SCIENCE↗

Antiferromagnetic Inverse Spinel Oxide LiCoVO 4 with Spin-Polarized Channels for Water Oxidation

Exploring highly efficient catalysts for the oxygen evolution reaction (OER) is essential for water electrolysis. Cost-effective transition-metal oxides with reasonable activity are raising attention. Recently, OER reactants' and products' differing spin configurations have been thought to cause slow reaction kinetics. Catalysts with magnetically polarized channels could selectively remove electrons with opposite magnetic moment and conserve overall spin during OER, enhancing triplet state oxygen molecule evolution. Herein, antiferromagnetic inverse spinel oxide LiCoVO 4 is found to contain d 7 Co 2+ ions that can be stabilized under active octahedral sites, possessing high spin states S = 3/2 (t 2g 5 e g 2 ). With high spin configuration, each Co 2+ ion has an ideal magnetic moment of 3 µ B , allowing the edge-shared Co 2+ octahedra in spinel to be magnetically polarized. Density functional theory simulation results show that the layered antiferromagnetic LiCoVO 4 studied contains magnetically polarized channels. The average magnetic moment (µ ave ) per transition-metal atom in the spin conduction channel is around 2.66 µ B . Such channels are able to enhance the selective removal of spin-oriented electrons from the reactants during the OER, which facilitates the accumulation of appropriate magnetic moments for triplet oxygen molecule evolution. Finally, the LiCoVO 4 reported has been identified as an oxide catalyst with excellent OER activity.

36 MATERIALS SCIENCE↗

Quantum Sensing and Imaging of Spin–Orbit-Torque-Driven Spin Dynamics in the Non-Collinear Antiferromagnet Mn 3 Sn

Novel non-collinear antiferromagnets with spontaneous time-reversal symmetry breaking, non-trivial band topology, and unconventional transport properties have received immense research interest over the past decade due to their rich physics and enormous promise in technological applications. One of the central focuses in this emerging field is exploring the relationship between the microscopic magnetic structure and exotic material properties. Nanoscale imaging of both spin–orbit-torque-induced deterministic magnetic switching and chiral spin rotation in non-collinear antiferromagnet Mn 3 Sn films using nitrogen-vacancy (NV) centers are reported. Direct evidence of the off-resonance dipole–dipole coupling between the spin dynamics in Mn 3 Sn and proximate NV centers is also demonstrated by NV relaxometry measurements. These results demonstrate the unique capabilities of NV centers in accessing the local information of the magnetic order and dynamics in these emergent quantum materials and suggest new opportunities for investigating the interplay between topology and magnetism in a broad range of topological magnets.

36 MATERIALS SCIENCE↗

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗

UOTe: Kondo‐Interacting Topological Antiferromagnet in a Van der Waals Lattice

Since the initial discovery of 2D van der Waals (vdW) materials, significant effort has been made to incorporate the three properties of magnetism, band structure topology, and strong electron correlations—to leverage emergent quantum phenomena and expand their potential applications. However, the discovery of a single vdW material that intrinsically hosts all three ingredients has remained an outstanding challenge. Here, in this work, the discovery of a Kondo-interacting topological antiferromagnet is reported in the vdW 5f electron system UOTe. It has a high antiferromagnetic (AFM) transition temperature of 150 K, with a unique AFM configuration that breaks the combined parity and time reversal (PT) symmetry in an even number of layers while maintaining zero net magnetic moment. This angle-resolved photoemission spectroscopy (ARPES) measurements reveal Dirac bands near the Fermi level, which combined with the theoretical calculations demonstrate UOTe as an AFM Dirac semimetal. Within the AFM order, the presence of the Kondo interaction is observed, as evidenced by the emergence of a 5ƒ flat band near the Fermi level below 100 K and hybridization between the Kondo band and the Dirac band. The density functional theory calculations in its bilayer form predict UOTe as a rare example of a fully-compensated AFM Chern insulator.

36 MATERIALS SCIENCE↗

Low-Frequency Electronic Noise in Quasi-2D van der Waals Antiferromagnetic Semiconductor FePS 3 —Signatures of Phase Transitions

Here, low-frequency current fluctuations, i.e., noise, in the quasi-2D van der Waals antiferromagnetic semiconductor FePS 3 with the electronic bandgap of 1.5 eV is investigated. The electrical and noise characteristics of the p-type, highly resistive, thin films of FePS 3 are measured at different temperatures. The noise spectral density is of the 1/f-type over most of the examined temperature range but reveals well-defined Lorentzian bulges, and increases strongly near the Néel temperature T N =118 K (f is the frequency). Intriguingly, the noise spectral density attains its minimum at temperature T≈200 K, which is attributed to an interplay of two opposite trends in noise scaling—one for semiconductors and another for materials with the phase transitions. The Lorentzian corner frequencies reveal unusual dependence on temperature and bias voltage, suggesting that their origin is different from the generation—recombination noise in conventional semiconductors. The obtained results are important for proposed applications of antiferromagnetic semiconductors in spintronic devices. They also attest to the power of the noise spectroscopy for monitoring various phase transitions.

36 MATERIALS SCIENCE↗

Magnetic Susceptibility and Neutron Scattering of Graphene in Antiferromagnetic State: a Tight-Binding Approach

We address here a tight-binding model study of the frequency-dependent antiferromagnetic spin susceptibility for the graphene systems. The Hamiltonian consists of electron hopping up to the third-nearest-neighbors, substrate and impurity effects in presence of electron-electron interactions at A and B sub-lattices. To calculate susceptibility, we evaluate the two-particle electron Green’s function by using Zubarev’s Green’s function technique. The frequency-dependent antiferromagnetic susceptibility of the system is computed numerically by taking 1000 X 1000 grid points of the electron momentum. The susceptibility displays a sharp peak at the neutron momentum transfer energy at low energies and another higher-energy peak associated with the substrate-induced gap. The evolution of these two peaks are investigated by varying neutron wave vector, Coulomb correlation energy, substrate-induced gap, electron hopping integrals and A- and B-site electron-doping concentrations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Antiferromagnetic Ordering at Room Temperature in Co-Doped Sb{sub 2}Te{sub 3} Topological Insulators

Structural and magnetic properties of Co-doped Sb{sub 2}Te{sub 3} topological insulators have been investigated. Surface morphology was studied using scanning electron microscope (SEM) and atomic force microscope (AFM). X-ray photo electron spectroscopy (XPS) study reveals the mixed states of Co in Co{sup 2+} and Co{sup 3+}. Magnetic study indicates that the substitution of Co in Sb{sub 2}Te{sub 3} not only tune the materials from diamagnetic to antiferromagnetic (even at room temperature) but also propose a promising materials for antiferromagnetic TI which may be useful even for room temperature applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Phase Diagrams of a 2D Dilute Antiferromagnetic Ising Model with Charged Impurities

In this work, we address a topical problem of a competition of charge and spin ordering for high-T cuprates. We have studied a simplified static 2D spin-pseudospin model on a square lattice, which takes into account both conventional antiferromagnetic spin exchange coupling and the on-site and intersite charge correlations in the CuO{sub 2} planes with the on-site Hilbert space reduced to only three effective valent states. We compared an analytical results for the ground state and for the temperature phase diagrams obtained in a mean field approximation and a large amount of the classical Monte Carlo calculations. Numerical results show that homogeneous ground state antiferromagnetic solutions found in a mean field approximation are unstable for the “strong” exchange limit with respect to phase separation with the charge and spin subsystems behaving like immiscible quantum liquids. We found an analytical expression for critical temperature of phase separation and performed the comparison with the Monte Carlo results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Proximity Effects of Superconductivity and Antiferromagnetism in a Nanowire

In this paper, we theoretically study the proximity effects of s-wave superconductivity(SC) and antiferromagnetism(AFM) in a nanowire. For the half-filling case, it was found that the Andreev bound states form near the boundary between the AFM and the SC which are accompanied by the strongly localized p-wave pairing. These in-gap states remain when the system is slightly doped. For the electron or hole doped system, they merge into the upper or the lower antiferromagnetic bands gradually with the increase of doping, respectively.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Structural and magnetic properties of ferrimagnetic ε-phase Mn 4 N and antiferromagnetic ζ-phase Mn10N thin films on MgO(001)

Single phase ε-Mn 4 N and ζ-Mn 10 N thin films are grown on MgO(001) using molecular beam epitaxy. The films are identified and characterized using reflection high-energy electron diffraction, x-ray diffraction, back scattered electron scanning electron microscopy, atomic/magnetic force microscopy and Rutherford backscattering spectrometry. These films are found to be highly smooth with root-mean-squared roughnesses 3.39 nm and below. The quality of ε-Mn 4 N grown is strongly dependent on substrate temperature during growth. Epitaxial growth of substantial grains composed of the antiferromagnetic η-phase Mn 3 N 2 side by side with ferrimagnetic ε-phase grains is observed when growth temperature is below 480 °C. Ising domains isolated within areas roughly 0.5 μm across are observed in the ferrimagnetic ε-phase grains of samples consisting of a mix of η- and ε-phase grains. Magnetic domains following semi-continuous paths, which are 0.7–7.2 μm across, are observed in single phase ε-Mn4N. Measurements of the ζ-phase detail the structure and magnetism of the material as high Mn content γ-type ζ-phase with a regular surface corrugation along the [100]-direction and antiferromagnetic.

36 MATERIALS SCIENCE↗

Applying a difference ratio method in spin-polarized scanning tunneling microscopy to determine crystalline anisotropies and antiferromagnetic spin alignment in Cr(0 0 1) c(2 $\times$ 2)

Here, we present spin-polarized scanning tunneling microscopy results for 8 micrometer thick, chromium (0 0 1)-oriented thin films deposited using molecular beam epitaxy on MgO(0 0 1) substrates, achieving a smooth, atomically-stepped staircase morphology. The c(2 × 2) surface structure of the Cr(0 0 1) surface was found via atomically-resolved scanning tunneling microscopy images and dI/dV spectroscopy. A practical method of interpreting spin-polarized scanning tunneling microscopy dI/dV images was developed and applied to the c(2 × 2) Cr(0 0 1) surface structure. A 180° spin reversal between atomic layers, characteristic of a topological, layer-wise antiferromagnetic spin structure, was quantitatively verified. In addition, the spin anisotropy directions for 3 different antiferromagnetic, atomic staircase domains occurring on the c(2 × 2) surface were quantitatively determined to coincide with the [1 0 0], [0 1 0], and [1 1 0] crystallographic axes of chromium

36 MATERIALS SCIENCE↗

Synthesis, structure and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9}: A double perovskite with competing antiferromagnetic and ferromagnetic interactions

The synthesis, structural characterization, and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9} double perovskite are reported. The crystal structure has been refined by X-ray and neutron powder diffraction data in the monoclinic space group P2{sub 1}/n. Co{sup 2+} and Sb{sup 5+} have the maximum order allowed for the La{sub 3}Co{sub 2}SbO{sub 9} stoichiometry. Rietveld refinements of powder neutron diffraction data show that at room temperature the cell parameters are a=5.6274(2) A, b=5.6842(2) A, c=7.9748(2) A and {beta}=89.999(3) Degree-Sign . Magnetization measurements indicate the presence of ferromagnetic correlations with T{sub C}=55 K attributed to the exchange interactions for non-linear Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. The effective magnetic moment obtained experimentally is {mu}{sub exp}=4.38 {mu}{sub B} (per mol Co{sup 2+}), between the theoretical one for spin only (3.87 {mu}{sub B}) and spin-orbit value (6.63 {mu}{sub B}), indicating partially unquenched contribution. The low magnetization value at high magnetic field and low temperature (1 {mu}{sub B}/f.u., 5 T and 5 K) and the difference between ZFC and FC magnetization curves (at 5 kOe) indicate that the ferromagnetism do not reach a long range order and that the material has an important magnetic frustration. - Graphical abstract: Co-O-Co (Yellow octahedra only) rich zones (antiferromagnetic) are in contact with Co-O-Sb-O-Co (Red and yellow octahedra) rich zones (Ferromagnetic) to give the peculiar magnetic properties, as a consequence, a complex hysteresis loop can be observed composed by a main and irreversible curve in all the measured range, superimposed with a ferromagnetic component at low fields. Highlights: Black-Right-Pointing-Pointer La{sub 3}Co{sub 2}SbO{sub 9} has small Goldschmidt Tolerance Factor (t) due to the small size of La{sup 3+}. Black-Right-Pointing-Pointer Small t determines an angle for the path Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} of 153 Degree-Sign . Black-Right-Pointing-Pointer Ferromagnetism is attributed to exchange interactions for Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. Black-Right-Pointing-Pointer Ferromagnetic nanoclusters are embedded in an antiferromagnetic matrix.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Antiferromagnetic transitions of osmium-containing rare earth double perovskites Ba{sub 2}LnOsO{sub 6} (Ln=rare earths)

The perovskite-type compounds containing both rare earth and osmium Ba{sub 2}LnOsO{sub 6} (Ln=Pr, Nd, Sm–Lu) have been prepared. Powder X-ray diffraction measurements and Rietveld analysis show that Ln{sup 3+} and Os{sup 5+} ions are structurally ordered at the M site of the perovskite BaMO{sub 3}. Magnetic susceptibility and specific heat measurements show that an antiferromagnetic ordering of Os{sup 5+} ions has been observed for Ba{sub 2}LnOsO{sub 6} (Ln=Pr, Nd, Sm, Eu, Gd, Lu) at 65–71 K. Magnetic ordering of Ln{sup 3+} moments occurs when the temperature is furthermore decreased. - Graphical abstract: The perovskite-type compounds containing both rare earth and osmium Ba{sub 2}LnOsO{sub 6} (Ln=Pr, Nd, Sm–Lu) have been prepared. An antiferromagnetic ordering of Os{sup 5+} ions has been observed for Ba{sub 2}LnOsO{sub 6} (Ln=Pr, Nd, Sm, Eu, Gd, Lu) at 65–71 K. Measurements and analysis of the specific heat for Ba{sub 2}PrOsO{sub 6} show that magnetic ordering of the Pr{sup 3+} moments should have occurred at ∼20 K. Display Omitted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Structural phase transition and antiferromagnetic transition of Tb{sub 3}RuO{sub 7}

Magnetic properties and structural phase transition of terbium ruthenate Tb{sub 3}RuO{sub 7} are investigated through magnetic susceptibility, specific heat, high-temperature X-ray diffraction and differential scanning calorimetry measurements. The structural phase transition from space group P2{sub 1}nb to Cmcm has been observed at 402 K. Tb{sub 3}RuO{sub 7} shows an antiferromagnetic transition at 17 K. In addition, another magnetic anomaly has been found at 10 K. Analysis of the magnetic specific heat for Tb{sub 3}RuO{sub 7} indicates that the magnetic transitions at 10 and 17 K are due to the magnetic ordering of Tb{sup 3+} and Ru{sup 5+} ions, respectively. - Graphical abstract: Temperature dependence of the magnetic specific heat divided by temperature (C{sub mag}/T) and the magnetic entropy (S{sub mag}) for Tb{sub 3}RuO{sub 7}. Two-step magnetic transition has been observed. - Highlights: • Tb{sub 3}RuO{sub 7} shows an antiferromagnetic transition at 17 K. • Specific heat measurements confirmed the occurrence of two-step magnetic transition. • The phase transition from space group P2{sub 1}nb to Cmcm has been observed at 402 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Synthesis and characterization of the novel antiferromagnet LaNiB 3 O 7

Here, we present the synthesis, structure, and magnetic properties of the novel borate LaNiB 3 O 7 - the first magnetically ordered compound reported in the CaAlB 3 O 7 structure type. This material is made of alternating sheets of corner-sharing borate tetrahedra and planes of La and Ni ions, with distorted nickel oxide [NiO 6 ] octahedra and lanthanum oxide [LaO 10 ] polyhedra. Temperature-dependent magnetic susceptibility data reveal dominantly antiferromagnetic interactions and an antiferromagnetic transition with a Neel temperature of 19 K, confirmed by specific heat data. The magnetic moment per nickel ion is 3.06 μ B . This compound uncovers a new family of rare-earth transition-metal borates to probe for magnetic interactions.

36 MATERIALS SCIENCE↗

Real-space visualization of short-range antiferromagnetic correlations in a magnetically enhanced thermoelectric

Short-range magnetic correlations can significantly increase the thermopower of magnetic semiconductors, representing a noteworthy development in the decades-long effort to develop high-performance thermoelectric materials. Here, we reveal the nature of the thermopower-enhancing magnetic correlations in the antiferromagnetic semiconductor MnTe. Using magnetic pair distribution function analysis of neutron scattering data, we obtain a detailed, real-space view of robust, nanometer-scale, antiferromagnetic correlations that persist into the paramagnetic phase above the Neel temperature $T_N$ = 307 K. In this work, the magnetic correlation length in the paramagnetic state is significantly longer along the crystallographic c axis than within the ab plane, pointing to anisotropic magnetic interactions. Ab initio calculations of the spin-spin correlations using density functional theory in the disordered local moment approach reproduce this result with quantitative accuracy. These findings constitute the first real-space picture of short-range spin correlations in a magnetically enhanced thermoelectric and inform future efforts to optimize thermoelectric performance by magnetic means.

36 MATERIALS SCIENCE↗