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At least 271 records · Page 15

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NASA NTRSDate not supplied

Engineered Hexagonal Boron Nitride:Titanium Dioxide Composites for High Voltage Insulation

Hexagonal boron nitride (hBN) and Titanium dioxide are both ceramic materials with widespread use in commercial and consumer applications in everything from cosmetics and paint to deep space satellite components. As a dielectric material, hBN is electrically insulating, thermally conductive, and stable to most temperatures and environments. Titanium dioxide is also a good electrical insulator with a wide bandgap and large dielectric constant, as well as high temperature tolerance and chemical stability. This presentation covers our recent efforts to combine the best properties of hBN and titanium dioxide to produce an intercalated hBN:titanium dioxide composite which was then further processed and incorporated into polymer composites, as well as a standalone ceramic material for testing as a novel insulation material.

boron nitride↗

NASA NTRS1972

Low voltage 30cm ion thruster

The construction of an ion thruster module (including thruster, power conditioning, and control system) capable of operating for 10,000 hours over a five to one range at an effective specific impulse of approximately 2800 seconds is discussed. The several interrelated tasks involved in the construction of the engine are described. Performance tests of the engine and the effects of various modifications are reported. It was demonstrated that thruster performance and stability were not materially affected by reasonable changes from the nominal operating point.

Source record↗

NASA NTRS1991

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Kapoor, V. J.↗

NASA NTRS1991

DC isolation and protection system and circuit

A precision analog electronic circuit that is capable of sending accurate signals to an external device that has hostile electric characteristics, including the presence of very large common mode voltages. The circuit is also capable of surviving applications of normal mode overvoltages of up to 120 VAC/VDC for unlimited periods of time without damage or degradation. First, the circuit isolates the DC signal output from the computer. Means are then provided for amplifying the isolated DC signal. Further means are provided for stabilizing and protecting the isolating and amplifying means, and the isolated and amplified DC signal which is output to the external device, against overvoltages and overcurrents.

Wagner, Charles A.↗

NASA NTRS1987

A lithium oxygen secondary battery

Some recent work on a lithium-oxygen secondary battery is reported in which stabilized zirconia oxygen vacancy conducting solid electrolytes were used for the effective separation of respective half-cell reactions. The electroactive material consisted of alloys possessing the general composition Li(x)FeSi2 immersed in a ternary molten salt comprising LiF, LiCl, and Li2O. The manufacture of the cell is described, and discharge-current voltage curves for partially charged cells are shown and discussed. A galvanostatic IR free-changing curve and an IR-free charge-discharge curve are also shown.

Semkow, Krystyna W.↗

NASA NTRS2010

Degradation of Leakage Currents in Solid Tantalum Capacitors Under Steady-State Bias Conditions

Degradation of leakage currents in various types of solid tantalum capacitors under steady-state bias conditions was investigated at temperatures from 105 oC to 170 oC and voltages up to two times the rated voltage. Variations of leakage currents with time under highly accelerated life testing (HALT) and annealing, thermally stimulated depolarization currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. During HALT the currents increase gradually up to three orders of magnitude in some cases, and then stabilize with time. This degradation is reversible and annealing can restore the initial levels of leakage currents. The results are attributed to migration of positively charged oxygen vacancies in tantalum pentoxide films that diminish the Schottky barrier at the MnO2/Ta2O5 interface and increase electron injection. A simple model allows for estimation of concentration and mobility of oxygen vacancies based on the level of current degradation.

Teverovsky, Alexander A.↗

NASA NTRS2018

The Effects of Background Pressure on SPT-140 Thruster Performance at Multiple Power Levels

NASA's planned Psyche mission is scheduled to launch in 2022 and begin a 3.5-year cruise to the metallic asteroid Psyche, where it would examine this unique body. The baseline spacecraft design is a hybrid of JPL's deep-space heritage subsystems with commercial partner SSL's power, structure, and SPT-140 electric propulsion subsystems. Since the deep-space implementation of the SPT-140 differs from the commercial implementation, primarily in the need for deep power throttling, characterization of the system at lower powers is necessary. One specific area of interest is the sensitivity of thruster performance to background pressure in ground-based test facilities, which can have an impact on the prediction of in-space performance. Measurements of this pressure dependence were performed on a qualification-model SPT-140 thruster over the 0.9-4.5 kW range of interest for the Psyche mission. Thrust sensitivity to pressure, in an absolute sense, was largest at 4.5 kW and decreased with power until there was little-to-no measurable effect at 0.9 kW. In a relative sense, thrust sensitivity was similar at all powers above 0.9 kW with about 2-4% higher thrust measured at 10 μTorr than at the lowest operating pressure. Thruster stability margin, examined as a function of magnet current, did not have a strong dependence on facility pressure. Finally, an investigation of low-power operation at the lowest facility pressure showed that a combination of added cathode keeper current and additional cathode propellant flow significantly mitigated the larger negative cathode-to-ground voltages that were observed. These test results, combined with thruster life test results, inform the selection of proper low-power operating conditions for Psyche.

Snyder, John S.↗

NASA NTRS1973

Preliminary study of a wall stabilized constructed arc

An iterative, implicit, finite-difference numerical technique is described which is suitable for obtaining solutions to the governing equations for a gas flowing in an axially symmetric constricted-arc heater. The method is shown to provide adequate solutions for three cases of simple pipe flows found in the literature, and for flow in a constricted-arc heater by direct comparison with experimental data. The comparison with arc-heater data includes static pressure, arc voltage, and wall heat flux, all as a function of axial location, and a radial temperature profile at one axial station. The arc-heater data were taken with air as the test gas at a heater inlet pressure approximately 0.40 atm and two flow rates of 2.2 and 4.8 g/sec. The arc currents investigated were between 377 and 584 amperes.

Graves, R. A.↗

NASA NTRS1994

Performance evaluation of the Russian SPT-100 thruster at NASA LeRC

Performance measurements of a Russian flight-model SPT-100 thruster were obtained as part of a comprehensive program to evaluate engineering issues pertinent to integration with Western spacecraft. Power processing was provided by a US Government developed laboratory power conditioner. When received the thruster had been subjected to only a few hours of acceptance testing by the manufacturer. Accumulated operating time during this study totalled 148 h and included operation of both cathodes. Cathode flow fraction was controlled both manually and using the flow splitter contained within the supplied xenon flow controller. Data were obtained at current levels ranging from 3 A to 5 A and thruster voltages ranging from 200 V to 300 V. Testing centered on the design power of 1.35 kW with a discharge current of 4.5 A. The effects of facility pressure on thruster operation were examined by varying the pressure via injection of xenon into the vacuum chamber. The facility pressure had a significant effect on thruster performance and stability at the conditions tested. Periods of current instabilities were noted throughout the testing period and became more frequent as testing progressed. Performance during periods of stability agreed with previous data obtained in Russian laboratories.

Sankovic, John M.↗

NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗

NASA NTRS2004

Enhanced Damping for Capillary Bridge Oscillation Using Velocity Feedback

The stability of cylindrical liquid bridges in reduced gravity is affected by ambient vibrations of the spacecraft. Such vibrations are expected to excite capillary modes of the bridge. The lowest-order unstable mode is particularly susceptible to vibration as the length of the bridge approaches the stability limit. This low-order mode is known as the (2,0) mode and is an axisymmetric varicose mode of one wavelength in the axial direction. In this work, an optical system is used to detect the (2,0)-mode amplitude. The derivative of the error signal produced by this detector is used to produce the appropriate voltages on a pair of ring electrodes which are concentric with the bridge. A mode-coupled Maxwell stress profile is thus generated in proportional to the modal velocity. Depending on the sign of the gain, the damping of the capillary oscillation can be either increased or decreased. This effect has been demonstrated in Plateau-tank experiments. Increasing the damping of the capillary modes on free liquid surfaces in space could be beneficial for containerless processing and other novel technologies. [work supported by NASA]

Wei, Wei↗

NASA NTRS2004

Enhanced Damping for Capillary Bridge Oscillation Using Velocity Feedback

Wei, Wei↗

NASA NTRS1978

A voltage to frequency converter for astronomical photometry

A voltage to frequency converter (VFC) for general use with photomultipliers is described. For high light levels, when the dead-time corrections for a photon counter would be excessive, the VFC maintains a linear response and allows the recording of data at high time resolution. Results of laboratory tests are given for the signal-to-noise characteristics, linearity, stability, and transient response of the VFC when used in conjunction with EMI 9658 and RCA C31034 photomultipliers.

Dunham, E.↗

NASA NTRS1995

Operational characteristics of a 200 C LC parallel resonant circuit

Research efforts are currently underway at the NASA Lewis Research Center to design and demonstrate an inverter capable of operating with a baseplate temperature of 200 C. In support of this project, various electrical components including capacitors, inductors, transformers, cables, and semiconductor switches are being developed or evaluated for integration into the inverter. In this work, a parallel LC resonant circuit was constructed and evaluated under simultaneous electrical and thermal stressing. The tests were performed in the temperature range of 25 to 200 C with an applied voltage of up to 90 V, 20 kHz. The individual components were comprised of high temperature film capacitors and powder core inductors developed in-house. The circuit was characterized in terms of the component currents and case temperatures as well as frequency of resonance as a function of applied bias and temperature. The results obtained, which have indicated good functional stability up to 200 C, are presented and discussed.

Baumann, Eric D.↗

NASA NTRSDate not supplied

Towards Energy Scale Calibration and Drift Correction of TES Detectors for Athena X-IFU

The Athena X-Ray Integral Field Unit (X-IFU) comprises a 2376-pixel array of transition edge sensors (TES) read out with time-division multiplexing (TDM). X-IFU will provide spatially resolved, high-resolution spectroscopy (2.5 eV full-width-half-maximum up to 7 keV) over the energy range 0.2 to 12 keV, with an absolute energy scale accuracy of 0.4 eV. The energy scale function maps the optimally filtered pulse height, in arbitrary engineering units, to real calibrated energy. Uncertainties in the calibration can result from imperfect fitting of the energy scale between the known calibration points. Furthermore, temporal changes in the TES operating environment, such as heat-sink temperature, magnetic field and bias voltage, can cause significant variations in the detector gain function over time. If not properly corrected, this can result in degradation of the energy resolution, and systematic errors in the absolute energy scale. The non-linear nature of TES detectors, coupled with the possibility of multiple simultaneously occurring sources of drift, can make effective corrections over the full bandpass of the instrument extremely challenging. Athena X-IFU will employ an on-board calibration source that provides known reference x-ray lines. This provides real-time monitoring of the gain stability of the detector system and information that can be used to correct for gain drifts. For X-IFU the baseline approach is to measure a series of calibration curves under different environmental conditions, which bound the expected drifts the instrument is predicted to see over the course of the mission. Using the information from the in-flight calibration source, these energy scale functions can be interpolated to generate a new corrected energy scale as a function of time. In this paper we discuss progress towards demonstrating that the X-IFU energy scale requirements can be met. We present measurements on ~ 200 pixels in a prototype X-IFU array read out with 8-column x 32-row TDM. We use a rotating target source containing 12 fluorescent targets to generate x-ray lines covering the energy range 4 keV (Sc-Kα) to 12 keV (Br-Kα). We present measurements of the non-linear energy scale function and show how variations in heat-sink temperature, TES bias voltage and magnetic field affect the shape of TES energy scale differently and introduce different residual gain errors over the bandpass. We explore different drift correction algorithms that use either a single or multiple referential lines to track and correct the gain from these various sources of drift. In addition to the pulse-height, the DC ‘baseline’ level of the TES can contain information about its bias conditions. Thus, we test a multi-parameter gain correction algorithm that attempts to incorporate both the pulse height and the additional baseline information into the algorithm.

Stephen J Smith↗

NASA NTRS1981

Thermal stability of GaAs heteroface solar cells with differing contact materials

GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Elevated temperature experiments were conducted to evaluate the electrical stability of cells with different contact materials. These experiments indicate that for operation of GaAs heteroface solar cells at elevated temperatures, front contact metals must be carefully chosen. The short circuit current varied by only about 3% for cells with Pd/Ag contacts that were heated to 240 C for a total of 500 hours. However, a total decrease in the open circuit voltage of about 20% was observed for these cells. After heating cells to 400 C, large changes in open circuit voltage were observed for cells with Pd/Ag, Pd/Au, Pd, Ag, and Ti contacts; however, preliminary results indicate more stable open circuit voltages for cells with Au, Cr, Zn, and Cr/Au contacts.

Friesen, W. J.↗

NASA NTRS2005

Thermal Assessment of Swift BAT Instrument Thermal Control System in Flight

THE BAT is the primary instrument on the Swift spacecraft. The Swift mission is part of the National Aeronautics and Space Administration (NASA) Medium-Size Explorer (MIDEX) Program, and is managed by Goddard Space Flight Center (GSFC). It is designed to detect gamma ray burst over a broad region of the sky in a low Earth orbit of 600-km altitude and quickly align the telescopes on the spacecraft to the gamma ray source. It was successfully launched into orbit on November 20, 2004. The Swift mission is a first of its kind of multi-wavelength transient observatory for gamma ray burst astronomy. Its mission life is 2 years. The inclination is 22 deg maximum. The spacecraft bus voltage to the instruments is in the 24 V to 35 V range. The instruments will be turned off when the voltage is below 27 V. The BAT is mounted to the optical bench through five titanium flexures. The BAT has been developed at GSFC. Its telescope assembly consists of 256 Detector Modules (DMs) in the Detector Array. There are 16 Detector Array Blocks. Each Block holds 16 DMs, 3 Block Voltage Regulator (BVR) units and 3 Block Command & Data Handling (BCDH) units. The power dissipation of each Block has been measured to be 13 W. Therefore the total power dissipation of the 16 Blocks is 208 W. The DAP is 1.3 m (4.3 ft) x 1 m (3.3 ft), accommodates all the 16 Blocks. It also provides the mounting surface and the positional stability for the Blocks. The DMs are located at the top (+X side) of the DAP and is enclosed by graded-Z shields on the sides and a coded mask at the top. The BVRs and BCDHs are located at the bottom (-X side) of the DAP. Eight Blocks are located at the front (-Z side or radiator side) of the DAP, and eight are located at the rear (+Z side) of the DAP. The DMs and top of DAP are insulated with a 7-layer multi-layer insulation (MLI). There is a 5.08 cm (2 in) x 5.08 cm (2 in) MLI cutout over each Block heater controller so that heat radiates from the heater controller to the mask. The exterior of the mask, graded-Z shields and bottom of DAP is insulated with a 15-layer MLI.

Choi, Michael K.↗

NASA NTRS1982

Environmentally induced discharges on satellites

A discharge process whose trigger conditions are a negative exposed metallic surface surrounded by a less negative dielectric, and a large voltage gradient at a dielectric/metal interface is proposed. Analysis of SCATHA data for a discharge substantiates the postulation. Surface discharges cause a small transient charge transfer to space which results in voltage transients. A method of computing these transients, based on the charge lost through the capacitance to space and a fraction of charge stored in the dielectric at the discharge source was developed. It gives an estimate of the discharge transients at the discharge site, which is used as input for coupling code analysis of structure/system response. The transient computations were applied to a three-axis stabilized, geosynchronous satellite for both sunlight and eclipse charging. The energy of the transient pulses are about 1 mJ for sunlight discharge and 8 mJ for eclipse. Changing of selected coatings on the satellite would relieve the stress.

Stevens, N. J.↗