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At least 271 records · Page 15

Ultrathin, ternary alloy PtRuFe nanowires, and methods of making same

The present invention provides a method of producing ternary metal-based nanowire networks. The method comprises combining an aqueous mixture of a platinum hydrate, a ruthenium hydrate, and an iron hydrate with a solution of hexadecyltrimethylammonium bromide in chloroform to form an inverse micellar network; adding a reducing agent to reduce metal ions within the inverse micellar network; and isolating the nanowires. The relative amounts of the platinum, ruthenium and iron in the mixture correlate to the atomic ratio of the platinum, ruthenium and iron in the ternary nanowires. The diameters of the ternary nanowires are from about 0.5 nm to about 5 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Ultrathin, conductive and fouling-resistant zwitterionic polymer films

Disclosed are methods of preparing antifouling coatings on reverse osmosis membranes with initiated vapor deposition or oxidative vapor deposition. The coatings enhance the stability and lifetime of membranes without sacrificing performance characteristics, such as permeability or salt retention.

36 MATERIALS SCIENCE↗

Ultrathin graphene/polymer laminate films

According to one embodiment, a product includes a composite film comprising a polymer layer directly adjacent a graphene layer. According to another embodiment, a process includes layering a graphene layer onto a polymer layer to form a composite film.

Stadermann, Michael↗

Efficient ultrathin all-dielectric nonlinear optical device

An apparatus and method are provided for generating harmonic light from a pump beam that is impinged on a metasurface comprising a plurality of all-dielectric resonator bodies. A multiple quantum well structure formed in each resonator body includes asymmetric coupled quantum wells having intersubband transition frequencies that couple to Mie resonances of the resonator bodies.

Sarma, Raktim↗

Ultrathin conformal OCVD PEDOT coatings on porous electrodes and applications thereof

The present disclosure relates to electrodes comprising a polymer film and a substrate, wherein the polymer film has a thickness of about 5 nm to about 600 nm. The present disclosure also relates to electrochemical cells and batteries comprising the electrodes disclosed herein. The present disclosure also relates to methods of making the electrodes disclosed herein.

Gleason, Karen K.↗

Ultrathin layer photocatalysts

A transparent ceramic substrate is covered by a photocatalyst layer, at least partially. The photocatalyst layer includes a semiconductor material that, upon exposure to electromagnetic radiation, forms a plurality of electrons and a plurality of holes that remain confined to the photocatalyst layer. The transparent ceramic substrate has a diameter that is larger than the wavelength of the electromagnetic radiation for light trapping.

Wang, Yifeng↗

Atomic lift-off of epitaxial membranes for cooling-free infrared detection

Recent breakthroughs in ultrathin, single-crystalline, freestanding complex oxide systems have sparked industry interest in their potential for next-generation commercial devices. However, the mass production of these ultrathin complex oxide membranes has been hindered by the challenging requirement of inserting an artificial release layer between the epilayers and substrates. Here we introduce a technique that achieves atomic precision lift-off of ultrathin membranes without artificial release layers to facilitate the high-throughput production of scalable, ultrathin, freestanding perovskite systems. Leveraging both theoretical insights and empirical evidence, we have identified the pivotal role of lead in weakening the interface. This insight has led to the creation of a universal exfoliation strategy that enables the production of diverse ultrathin perovskite membranes less than 10 nm. Our pyroelectric membranes demonstrate a record-high pyroelectric coefficient of 1.76 × 10 −2 C m −2 K −1 , attributed to their exceptionally low thickness and freestanding nature. Moreover, this method offers an approach to manufacturing cooling-free detectors that can cover the full far-infrared spectrum, marking a notable advancement in detector technology.

nanoscale materials↗

High temperature, low mass solar blanket development

This paper presents methods of incorporating ultrathin silicon solar cells into photovoltaic blankets for space applications. This type of cell has the highest power-to-mass ratio and best performance under space radiation of any silicon solar cell. Interconnect materials and designs, and the results of the investigation of the applicability of parallel-gap resistance welding for interconnecting ultrathin cells are discussed. Data relating contact pull strength and cell electrical degradation to welding parameters such as time, voltage, and pressure are presented. Methods for bonding ultrathin cells to flexible substrates and for bonding thin covers to these cells are described, and the results of vacuum thermal cycling and thermal soak tests on prototype ultrathin cell test coupons are included.

Mesch, H. G.↗

Monolayer Plasmonic Nanoframes as Large‐Area, Broadband Metasurface Absorbers

Abstract Broadband absorbers are useful ultraviolet protection, energy harvesting, sensing, and thermal imaging. The thinner these structures are, the more device‐relevant they become. However, it is difficult to synthesize ultrathin absorbers in a scalable and straightforward manner. A general and straightforward synthetic strategy for preparing ultrathin, broadband metasurface absorbers that do not rely on cumbersome lithographic steps is reported. These materials are prepared through the surface‐assembly of plasmonic octahedral nanoframes (NFs) into large‐area ordered monolayers via drop‐casting with subsequent air‐drying at room temperature. This strategy is used to produce three types of ultrathin broadband absorbers with thicknesses of ≈200 nm and different lattice symmetries (loose hexagonal, twisted hexagonal, dense hexagonal), all of which exhibit efficient light absorption (≈90%) across wavelengths ranging from 400–800 nm. Their broadband absorption is attributed to the hollow morphologies of the NFs, the incorporation of a high‐loss material (i.e., Pt), and the strong field enhancement resulting from surface assembly. The broadband absorption is found to be polarization‐independent and maintained for a wide range of incidence angles (±45°). The ability to design and fabricate broadband metasurface absorbers using this high‐throughput surface‐based assembly strategy is a significant step toward the large‐scale, rapid manufacturing of nanophotonic structures and devices.

36 MATERIALS SCIENCE↗

Enhanced Ferromagnetism in Atomically Thin Oxides Achieved by Interfacial Reconstruction

Discoveries of ferromagnetic materials with ultrathin thickness are of great importance for both fundamental science and technological applications. Transition metal oxides (TMOs) provide promising candidates in the context of next‐generation spintronics, despite the severe decay of ferromagnetism as the thickness reduces to the nanometer regime. Here, in this work, an efficient strategy to eliminate the magnetic dead layer in atomically thin oxides is presented, by using the epitaxial interface of 3 d and 5 d oxide monolayers that reconciles both strong exchange interaction and large uniaxial magnetic anisotropy. Combining multiple experimental methods, a ferromagnetic transition in an ultrathin oxide heterostructure comprised of only one La 0.2 Sr 0.8 MnO 3 monolayer sandwiched by SrIrO 3 monolayer (total thickness of three unit‐cells) is unambiguously demonstrated. Remarkably, a largely enhanced saturation magnetization (2 µ B Mn −1 ) and Curie temperature (80 K) are observed for the single manganite monolayer, as compared to previously reported ferromagnetic monolayer oxides. The results demonstrate a general strategy for creating robust ferromagnetism in ultrathin TMOs, potentially enabling novel oxide spin‐orbitronic devices.

2D ferromagnetism↗

Steady motion of 80-nm-size skyrmions in a 100-nm-wide track

The current-driven movement of magnetic skyrmions along a nanostripe is essential for the advancement and functionality of a new category of spintronic devices resembling racetracks. Despite extensive research into skyrmion dynamics, experimental verification of current-induced motion of ultra-small skyrmions within an ultrathin nanostripe is still pending. Here, we unveil the motion of individual 80 nm-size skyrmions in an FeGe track with an ultrathin width of 100 nm. The skyrmions can move steadily along the track over a broad range of current densities by using controlled pulse durations of as low as 2 ns. The potential landscape, arising from the magnetic edge twists in such a geometrically confined system, introduces skyrmion inertia and ensures efficient motion with a vanishing skyrmion Hall angle. Our results showcase the steady motion of skyrmions in an ultrathin track, offering a practical pathway for implementing skyrmion-based spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Metallicity and anomalous Hall effect in epitaxially strained, atomically thin RuO 2 films

The anomalous Hall effect (AHE), a hallmark of time-reversal symmetry breaking, has been reported in rutile RuO 2 , a debated metallic altermagnetic candidate. Previously, AHE in RuO 2 was observed only in strain-relaxed thick films under extremely high magnetic fields (~50 T). Yet, in ultrathin strained films with distinctive anisotropic electronic structures, there are no reports, likely due to disorder and defects suppressing metallicity thus hindering its detection. Here, we demonstrate that ultrathin, fully strained 2 nm TiO 2 /t nm RuO 2 /TiO 2 (110) heterostructures, grown by hybrid molecular beam epitaxy, retain metallicity and exhibit a sizeable AHE at a significantly lower magnetic field (< 9 T). Density functional theory calculations reveal that epitaxial strain stabilizes a noncompensated magnetic ground state and reconfigures magnetic ordering in RuO 2 (110) thin films. These findings establish ultrathin RuO 2 as a platform for strain-engineered magnetism and underscore the transformative potential of epitaxial design in advancing spintronic technologies.

MBE↗

Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al 2 O 3 /MgO memristors

Ultrathin (sub-2 nm) Al 2 O 3 /MgO memristors were recently developed using an in vacuo atomic layer deposition (ALD) process that minimizes unintended defects and prevents undesirable leakage current. These memristors provide a unique platform that allows oxygen vacancies (V O ) to be inserted into the memristor with atomic precision and study how this affects the formation and rupture of conductive filaments (CFs) during memristive switching. Herein, we present a systematic study on three sets of ultrathin Al 2 O 3 /MgO memristors with V O -doping via modular MgO atomic layer insertion into an otherwise pristine insulating Al 2 O 3 atomic layer stack (ALS) using an in vacuo ALD. At a fixed memristor thickness of 17 Al 2 O 3 /MgO atomic layers (~1.9 nm), the properties of the memristors were found to be affected by the number and stacking pattern of the MgO atomic layers in the Al 2 O 3 /MgO ALS. Importantly, the trend of reduced low-state resistance and the increasing appearance of multi-step switches with an increasing number of MgO atomic layers suggests a direct correlation between the dimension and dynamic evolution of the conducting filaments and the V O concentration and distribution. Understanding such a correlation is critical to an atomic-scale control of the switching behavior of ultrathin memristors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Dynamics of Thermally Driven Domain Transformation in Ferroelectric Thin Films

An important feature in ultrathin ferroelectric films is the spontaneous formation of nanoscale polarization domain patterns. Epitaxial strain can greatly increase the ferroelectric transition temperature such that films can be in the ferroelectric state during growth. On the other hand, depolarization fields compete with ferroelectricity in ultrathin films, and, consequently, the optimal domain configuration during growth is a moving target. Under these conditions it is readily possible for a grown film to be in a nonequilibrium domain configuration. As the energy landscape in the system is quite complex, the relaxation dynamics by which a system can evolve towards the true equilibrium configuration are also quite interesting. Here, to capture the details of this process we used Bragg-geometry x-ray photon correlation spectroscopy (XPCS), in which x-ray scattering speckle patterns contain the information from the domain arrangements inside the film. With modest heating (∼15⁢0 °C) domain relaxation from 𝑇 (tetragonal) to 𝑀 𝐶 (monoclinic) was observed in BaTiO 3 films grown on ultrathin ferroelectric PbTiO 3 layers. Two-time correlation analysis reveals fascinating details associated with sticking points and reversals in the process.

36 MATERIALS SCIENCE↗

Thin cells for space

Research and pilot line production efforts directed towards the fabrication of high efficiency ultrathin silicon solar cells (50 micrometers) are reported. Conventional ultrathin cells with air-mass-zero (AM0) efficiencies exceeding 14% and coplanar back contact cells with AM0 efficiencies up to 11.7% were developed. The primary mechanisms limiting efficiency were determined in both types of cells, and they are discussed within the context of further improving efficiency. Results of pilot line production of conventional ultrathin cells are also presented. Average AM0 efficiencies of 12% were readily achieved for 2000 cell production runs.

Storti, G.↗