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At least 271 records · Page 15

Forced RF generation of CW magnetrons for superconducting accelerators

CW magnetrons, designed and optimized for industrial RF heaters, were suggested to power Superconducting RF cavities due to their higher efficiency and lower cost than traditional klystrons, IOT’s, or solid-state amplifiers. RF amplifiers driven by a master-oscillator serve as coherent RF sources. CW magnetrons are regenerative RF generators with a huge regenerative gain. Very large regenerative gain causes instability with intense noise when a magnetron operates with the anode voltage higher than the threshold of self-excitation. Traditionally for stabilization of magnetrons is used injection-locking by a quite small signal. In this case the CW magnetrons do not provide correlation of the magnetron startup with the injection-locking signal. Thus, the magnetron except the injection locked oscillations may generate large noise. This may increase emittance of the beam in SRF accelerators. Recently we have developed mode for forced RF generation of CW magnetrons when the magnetron startup is provided by the injected forcing signal and the regenerative noise is suppressed. The mode is most suitable for SRF accelerators. The mode is briefly described below.

43 PARTICLE ACCELERATORS↗

Electrical switching in cadmium boracite single crystals

Cadmium boracite single crystals at high temperatures ( 300 C) were found to exhibit a reversible electric field-induced transition between a highly insulative and a conductive state. The switching threshold is smaller than a few volts for an electrode spacing of a few tenth of a millimeter corresponding to an electric field of 100 to 1000 V/cm. This is much smaller than the dielectric break-down field for an insulator such as boracite. The insulative state reappears after voltage removal. A pulse technique revealed two different types of switching. Unstable switching occurs when the pulse voltage slightly exceeds the switching threshold and is characterized by a pre-switching delay and also a residual current after voltage pulse removal. A stable type of switching occurs when the voltage becomes sufficiently high. Possible device applications of this switching phenomenon are discussed.

Takahashi, T.↗

NASA GRC and MSFC Space-Plasma Arc Testing Procedures

Tests of arcing and current collection in simulated space plasma conditions have been performed at the NASA Glenn Research Center (GRC) in Cleveland, Ohio, for over 30 years and at the Marshall Space Flight Center (MSFC) in Huntsville, Alabama, for almost as long. During this period, proper test conditions for accurate and meaningful space simulation have been worked out, comparisons with actual space performance in spaceflight tests and with real operational satellites have been made, and NASA has achieved our own internal standards for test protocols. It is the purpose of this paper to communicate the test conditions, test procedures, and types of analysis used at NASA GRC and MSFC to the space environmental testing community at large, to help with international space-plasma arcing-testing standardization. Discussed herein are neutral gas conditions, plasma densities and uniformity, vacuum chamber sizes, sample sizes and Debye lengths, biasing samples versus self-generated voltages, floating samples versus grounded samples, test electrical conditions, arc detection, preventing sustained discharges during testing, real samples versus idealized samples, validity of LEO tests for GEO samples, extracting arc threshold information from arc rate versus voltage tests, snapover, current collection, and glows at positive sample bias, Kapton pyrolysis, thresholds for trigger arcs, sustained arcs, dielectric breakdown and Paschen discharge, tether arcing and testing in very dense plasmas (i.e. thruster plumes), arc mitigation strategies, charging mitigation strategies, models, and analysis of test results. Finally, the necessity of testing will be emphasized, not to the exclusion of modeling, but as part of a complete strategy for determining when and if arcs will occur, and preventing them from occurring in space.

Ferguson, Dale C.↗

Harnessing the Second-Order Metal−Insulator Transition for Neuromorphic Computing

Vanadium oxides are widely studied phase change materials for brain-inspired computing architectures. Systems like VO 2 and V 2 O 3 exhibit first-order metal−insulator transitions (MITs) with hysteresis and percolative switching, increasing stochasticity and device variability. Here, we focus on the less explored Magnéli phase V 4 O 7 , which undergoes a continuous, non-hysteretic, second-order MIT. This surprisingly enables highly reproducible volatile resistive switching in spiking-neuron-type devices. We synthesize V 4 O 7 films, characterize their structural and transport properties, and demonstrate voltage and current-driven threshold switching with electrothermal feedback. In a Pearson–Anson oscillator, V 4 O 7 devices produce stable, tunable spiking across 20–200 kHz, with consistent operation among multiple devices. We introduce a numerical analog leaky-integrate-and-fire (aLIF) model that captures waveform shapes and their dependence on load resistance, temperature, and voltage. Furthermore, these findings suggest that second-order MIT materials like V 4 O 7 are promising for deterministic, scalable spiking neuron arrays for neuromorphic computing.

V4O7↗

NASA GRC and MSFC Space-Plasma Arc Testing Procedures

Tests of arcing and current collection in simulated space plasma conditions have been performed at the NASA Glenn Research Center (GRC) in Cleveland, Ohio, for over 30 years and at the Marshall Space flight Center (MSFC) for almost as long. During this period, proper test conditions for accurate and meaningful space simulation have been worked out, comparisons with actual space performance in spaceflight tests and with real operational satellites have been made, and NASA has achieved our own internal standards for test protocols. It is the purpose of this paper to communicate the test conditions, test procedures, and types of analysis used at NASA GRC and MSFC to the space environmental testing community at large, to help with international space-plasma arcing testing standardization. To be discussed are: 1. Neutral pressures, neutral gases, and vacuum chamber sizes. 2. Electron and ion densities, plasma uniformity, sample sizes, and Debye lengths. 3. Biasing samples versus self-generated voltages. Floating samples versus grounded. 4. Power supplies and current limits. Isolation of samples from power supplies during arcs. Arc circuits. Capacitance during biased arc-threshold tests. Capacitance during sustained arcing and damage tests. Arc detection. Preventing sustained discharges during testing. 5. Real array or structure samples versus idealized samples. 6. Validity of LEO tests for GEO samples. 7. Extracting arc threshold information from arc rate versus voltage tests. 8 . Snapover and current collection at positive sample bias. Glows at positive bias. Kapton pyrolization. 9. Trigger arc thresholds. Sustained arc thresholds. Paschen discharge during sustained arcing. 10. Testing for Paschen discharge thresholds. Testing for dielectric breakdown thresholds. Testing for tether arcing. 11. Testing in very dense plasmas (ie thruster plumes). 12. Arc mitigation strategies. Charging mitigation strategies. Models. 13. Analysis of test results. Finally, the necessity of testing will be emphasized, not to the exclusion of modeling, but as part of a complete strategy for determining when and if arcs will occur, and preventing them from occurring in space.

Ferguson, Dale C.a↗

NASA GRC and MSFC Space-Plasma Arc Testing Procedures

Tests of arcing and current collection in simulated space plasma conditions have been performed at the NASA Glenn Research Center (GRC) in Cleveland, Ohio, for over 30 years and at the Marshall Space Flight Center (MSFC) in Huntsville, Alabama, for almost as long. During this period, proper test conditions for accurate and meaningful space simulation have been worked out, comparisons with actual space performance in spaceflight tests and with real operational satellites have been made, and NASA has achieved our own internal standards for test protocols. It is the purpose of this paper to communicate the test conditions, test procedures, and types of analysis used at NASA GRC and MSFC to the space environmental testing community at large, to help with international space-plasma arcing-testing standardization. To be discussed are: 1.Neutral pressures, neutral gases, and vacuum chamber sizes. 2. Electron and ion densities, plasma uniformity, sample sizes, and Debuy lengths. 3. Biasing samples versus self-generated voltages. Floating samples versus grounded. 4. Power supplies and current limits. Isolation of samples from power supplies during arcs. 5. Arc circuits. Capacitance during biased arc-threshold tests. Capacitance during sustained arcing and damage tests. Arc detection. Prevention sustained discharges during testing. 6. Real array or structure samples versus idealized samples. 7. Validity of LEO tests for GEO samples. 8. Extracting arc threshold information from arc rate versus voltage tests. 9. Snapover and current collection at positive sample bias. Glows at positive bias. Kapon (R) pyrolisis. 10. Trigger arc thresholds. Sustained arc thresholds. Paschen discharge during sustained arcing. 11. Testing for Paschen discharge threshold. Testing for dielectric breakdown thresholds. Testing for tether arcing. 12. Testing in very dense plasmas (ie thruster plumes). 13. Arc mitigation strategies. Charging mitigation strategies. Models. 14. Analysis of test results. Finally, the necessity of testing will be emphasized, not to the exclusion of modeling, but as part of a complete strategy for determining when and if arcs will occur, and preventing them from occurring in space.

Ferguson, Dale C.↗

Portable generator having a configurable load bank

A portable generator includes a combustion engine. The portable generator includes an electric generator coupled to the combustion engine. The portable generator can include a load bank. When the electric generator operates at a first voltage and generates less than a threshold amount, the load bank is coupled to the electric generator in a first configuration. When the electric generator operates at a second voltage that is different than the first voltage, the load bank is coupled to the electric generator in a second configuration that is different than the first configuration.

42 ENGINEERING↗

Cable/Antenna Bounds Connecting Field Levels To Personnel Safety And Electronic Upset Thresholds

We use bounding models to estimate the power delivered to interior ordnance as well as the pin level voltages along a cable at interior electronic components. The procedures underlying these estimates are described in some detail. Conservation of steady-state power in a linear passive system underpins the power estimate, whereas, losses and quality factor limits underpin the limits on voltage transformations. The final levels are compared to no-fire threshold power and to minimum upset voltage levels in an example using a canonical slot aperture and cavity to estimate interior fields.

42 ENGINEERING↗

Novel Magnetron Operation and Control Methods for Superconducting RF Accelerators

High power magnetrons designed and optimized for industrial heating, being injection-locked, have been suggested to power superconducting RF cavities for accelerators due to lower cost and higher efficiency. However, standard operation methods do not provide high efficiency with wideband control suppressing microphonics. We have developed and experimentally verified novel methods of operating and controlling the magnetron that provide stable RF generation with higher efficiency and lower noise than other RF sources. By our method the magnetrons operate with the anode voltage notably lower than the self-excitation threshold improving its performance. This is also a promising way to increase tube reliability and longevity. A magnetron operating with the anode voltage lower than the self-excitation threshold, in so-called stimulated coherent generation mode has special advantage for pulse operation with a gated injection-locking signal. This eliminates the need for expensive pulsed HV modulators and additionally increases the magnetron RF source efficiency due to absence of losses in HV modulators.

43 PARTICLE ACCELERATORS↗

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

Lin, Steven H.↗

Suppression of ITG turbulence due to spectral shift during biasing induced H-mode on HBT-EP

Investigations of biasing induced H-mode discharges on HBT-EP show that the edge turbulence is consistent with the ion temperature gradient) mode and have allowed for the controlled observation of the effect of applied flow shear on the turbulence. Measurements of the radial wavenumber spectrum of floating potentials at the edge show that the turbulence intensity decreases with increasing shift in the spectrum average ⟨ k r ⟩ when increasing amounts of bias probe voltage (and increasing amounts of flow shear) is applied. This is in agreement with the spectral shift model [Staebler et al., Phys. Rev. Lett. 110, 055003 2013] for turbulence suppression via sheared flow. A shift in the wavenumber spectrum occurs at applied electrode voltages and currents below the threshold needed for an L–H transition, and a dithering transition is obtained when biasing near the threshold. Suppression of blob-filament turbulence in the scrape-off layer (SOL) precedes the L–H transition, with the SOL turbulence remaining low throughout the dithering phase, despite the modulation of turbulence levels in the nearby edge. This demonstrates that the SOL turbulence “decouples” from the edge turbulence. The spectral shift in the measured radial wavenumber is corroborated by the direct measurement of eddy tilt angle using a novel time delay analysis technique first developed for Doppler reflectometry [Pinzon et al., Plasma Phys. Controlled Fusion 61, 105009 (2019)] but adapted here for floating potential measurements.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Breakdown and Discharge Characteristics of High Repetition Frequency Nanosecond Pulsed Air Dielectric Barrier Discharge

This study explores the breakdown characteristics and discharge modes in a parallel plate air dielectric barrier discharge system using repetitive nanosecond pulses, with pulse repetition frequencies (PRFs) from 0.1 to 100 kHz. It examines how pulse parameters—PRF, pulse number and gas pressure—affect the memory effect, leveraging current and voltage measurements, fast imaging and optical emission spectroscopy. The findings show that higher PRFs lead to a reduction in breakdown voltage well below the streamer breakdown threshold. We argue that this effect may be attributed to the cumulative buildup of metastable species and negative ions in the discharge gap which could sustain free electrons in‐between the voltage pulses. Despite observing increased energy deposition with higher PRFs, the impact on filament formation was minimal, highlighting a strong dependence of discharge morphology on the accumulation of plasma‐produced species. This research studies provides valuable insights for controlling discharge regimes in applications such as plasma‐assisted combustion, surface treatment and air treatment by clarifying the interactions between discharge mechanisms at different PRFs and pressures.

42 ENGINEERING↗

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

Petrick, David J.↗

Inert gas thrusters

Inert gases, particularly argon and xenon, are of interest as possible alternatives to the usual electric thruster propellants of mercury and cesium. Hollow cathode data were obtained for a wide range of operating conditions. Some test conditions gave plasma coupling voltages at or below the sputtering threshold, hence should permit long operating lifetimes. All observations of hollow cathode operation were consistent with a single theory of operation, in which a significant amount of the total electron emission is from localized areas within the orifice. This mode of emission is also supported by scanning electron microscope photographs that indicate local temperatures at or near the melting temperature of the tungsten tip. Experimental hollow cathode performance was correlated for two orifice diameters, three inert gas propellants, and a range of flow rates for each propellant. The basic theory for the production of doubly ionized argon and xenon was completed. Experimental measurements of the doubly ionized fraction agree with theory within about plus or minus 20 percent. High voltage isolators were studied for the propellant feed line. The breakdown voltage per segment ranged from 300 to over 500 V with argon.

Kaufman, H. R.↗

Performance of the ATLAS RPC detector and Level-1 muon barrel trigger at √(s)=13 TeV

The ATLAS experiment at the Large Hadron Collider (LHC) employs a trigger system consisting of a first-level hardware trigger (L1) and a software-based high-level trigger. The L1 muon trigger system selects muon candidates, assigns them to the correct LHC bunch crossing and classifies them into one of six transverse-momentum threshold classes. The L1 muon trigger system uses resistive-plate chambers (RPCs) to generate the muon-induced trigger signals in the central (barrel) region of the ATLAS detector. The ATLAS RPCs are arranged in six concentric layers and operate in a toroidal magnetic field with a bending power of 1.5 to 5.5 Tm. The RPC detector consists of about 3700 gas volumes with a total surface area of more than 4000 m2. This paper reports on the performance of the RPC detector and L1 muon barrel trigger using 60.8 fb-1 of proton-proton collision data recorded by the ATLAS experiment in 2018 at a centre-of-mass energy of 13 TeV. Detector and trigger performance are studied using Z boson decays into a muon pair. Measurements of the RPC detector response, efficiency, and time resolution are reported. Measurements of the L1 muon barrel trigger efficiencies and rates are presented, along with measurements of the properties of the selected sample of muon candidates. Measurements of the RPC currents, counting rates and mean avalanche charge are performed using zero-bias collisions. Finally, RPC detector response and efficiency are studied at different high voltage and front-end discriminator threshold settings in order to extrapolate detector response to the higher luminosity expected for the High Luminosity LHC.

47 OTHER INSTRUMENTATION↗

Method and Apparatus for Reducing the Vulnerability of Latches to Single Event Upsets

A delay circuit includes a first network having an input and an output node, a second network having an input and an output, the input of the second network being coupled to the output node of the first network. The first network and the second network are configured such that: a glitch at the input to the first network having a length of approximately one-half of a standard glitch time or less does not cause the voltage at the output of the second network to cross a threshold, a glitch at the input to the first network having a length of between approximately one-half and two standard glitch times causes the voltage at the output of the second network to cross the threshold for less than the length of the glitch, and a glitch at the input to the first network having a length of greater than approximately two standard glitch times causes the voltage at the output of the second network to cross the threshold for approximately the time of the glitch. The method reduces the vulnerability of a latch to single event upsets. The latch includes a gate having an input and an output and a feedback path from the output to the input of the gate. The method includes inserting a delay into the feedback path and providing a delay in the gate.

Robert L Shuler, Jr.↗

Method and Apparatus for Reducing the Vulnerability of Latches to Single Event Upsets

A delay circuit includes a first network having an input and an output node, a second network having an input and an output, the input of the second network being coupled to the output node of the first network. The first network and the second network are configured such that: a glitch at the input to the first network having a length of approximately one-half of a standard glitch time or less does not cause tile voltage at the output of the second network to cross a threshold, a glitch at the input to the first network having a length of between approximately one-half and two standard glitch times causes the voltage at the output of the second network to cross the threshold for less than the length of the glitch, and a glitch at the input to the first network having a length of greater than approximately two standard glitch times causes the voltage at the output of the second network to cross the threshold for approximately the time of the glitch. A method reduces the vulnerability of a latch to single event upsets. The latch includes a gate having an input and an output and a feedback path from the output to the input of the gate. The method includes inserting a delay into the feedback path and providing a delay in the gate.

Robert L Shuler Jr.↗

Short Circuit Detection and Voltage Sense for High Voltage Ionization Tube Power Supplies

Fermilab's PIP-II upgrade requires new rack-mounted power supplies for Beam Loss Monitor (BLM) ionization tubes compatible with the microTCA 4.1 standard, supporting high-side current measurement for short circuit detection, voltage sense telemetry, and low-side current measurement for beam loss readout. This work presents the design and preliminary schematic of such a supply. A resistive current sensing approach was chosen over inductive, optical, and Hall-effect alternatives for its independence from cable length and component availability. A 500 mΩ inline shunt steps the 2 kV common mode voltage down to roughly 70 V, producing a ~27 μV pulse during a short, which is amplified 500x, compared against a 14-bit DAC threshold, and latched to drive a fault line. Voltage sense steps the 2 kV output down at a 1V/1000V ratio, buffers it with a low bias current amplifier, and digitizes it via a 24-bit ADC over SPI. Onboard power is regulated from 12 V down to isolated 5 V and 3.3 V rails, with capacitive isolation on FPGA communication lines. Lumped parameter models were developed for the ionization tube (0.327 nF, 20 to 200 GΩ dynamic resistance) and the RG-58 coaxial cable to support the design. Component selection is complete and a preliminary schematic has been drawn in Altium Designer, forming the foundation for future prototyping and validation.

Yu, Kellen [Cornell U.]↗