Results for “thin contacts” — Page 15

NASA NTRS1989

Ultra-thin, light-trapping silicon solar cells

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Landis, Geoffrey A.↗

DOE OSTI2024

Low Resistance Contact to P-Type Monolayer WSe 2

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. Here, in this study, we develop a charge-transfer doping strategy with WSe 2 /α-RuCl 3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 10 13 cm -2 can be achieved in the WSe 2 /α-RuCl 3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe 2 transistors with an on-current of 35 μA·μm -1 and an I ON /I OFF ratio exceeding 10 9 at room temperature.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Engineered Thin Diffusion Layers for Anion-Exchange Membrane Electrolyzer Cells with Outstanding Performance

Anion-exchange membrane electrolyzer cells (AEMECs) are one of the most promising technologies for carbon-neutral hydrogen production. Over the past few years, the performance and durability of AEMECs have substantially improved. Herein, we report an engineered liquid/gas diffusion layer (LGDL) with tunable pore morphologies that enables the high performance of AEMECs. The comparison with a commercial titanium foam in the electrolyzer indicated that the engineered LGDL with thin-flat and straight-pore structures significantly improved the interfacial contacts, mass transport, and activation of more reaction sites, leading to outstanding performance. We obtained a current density of 2.0 A/cm 2 at 1.80 V with an efficiency of up to 81.9% at 60 °C under 0.1 M NaOH-fed conditions. The as-achieved high performance in this study provides insight to design advanced LGDLs for the production of low-cost and high-efficiency AEMECs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Scalable Surface Micro-Texturing of LLZO Solid Electrolytes for Battery Applications

A challenge for lithium lanthanum zirconate (LLZO)-based solid-state batteries is to increase the critical current density (CCD) to enable high current cycling. A promising strategy is to modify the LLZO surface morphology to provide a larger contact area with the Li metal. Here, a surface-textured thin LLZO electrolyte was prepared through an easily scalable process. The texturing process is a simple pressing of green LLZO tapes between micro-textured substrates. A variety of textures can be produced, depending on the type of substrate, and texturing can be on either one side or both sides. For this work, after pressing and sintering, several micro-patterns are formed on thin LLZO (~118 μm thick). The properties of the various samples were characterized to investigate the impact of surface texturing, and the most promising ones were selected for electrochemical testing in symmetrical lithium cells and full cells. Li symmetric cells using a coarse ridge-textured LLZO exhibit ~2.5 times increased CCD compared to planar non-textured LLZO, and a solid-state full cell shows stable cycling and improved rate performance. Finally, we believe this process offers a favorable trade-off of processing complexity vs structural optimization to maximize CCD.

25 ENERGY STORAGE↗

NASA NTRS1965

Tungsten wire and tubing joined by nickel brazing

Thin tungsten wire and tungsten tubing are brazed together using a contacting coil of nickel wire heated to its melting point in an inert-gas atmosphere. This method is also effective for brazing tungsten to tungsten-rhenium parts.

Source record↗

NASA NTRS1968

Guidance and control research

Guidance and control research - Josephson junction memory elements, frequency response of thin film thermal detectors, gallium selenide barrier gate, and photoconductor metal contacts

Source record↗

NASA NTRS1975

Microconvection in evaporation and microconvection in ice formation

Absorption of solar radiation by sea water with contact heat exchange and evaporation leads to the formation of a thin cold film on the ocean surface. Microconvection to ice in this thin surface layer is attributed to nonuniform temperature distributions in wind and water and irregular drag by the air currents.

Shumilov, A. V.↗

NASA NTRS1986

Technology for satellite power conversion

The work performed in this reporting period has concentrated on the metal-oxide-metal (MOM) diode. The fabrication procedure begins with the deposition of gold probing pads to provide a non-oxidizing contact to test the dc characteristics to the diode accurately. A thin patch capped with an insulating SiO2 layer, is deposited next to form the first half of the diode. The other half of the diode, typically Ni, is deposited completing the conduction path from the oxidized edge of the Ni patch to the opposite gold probing pad. It is important in this step that the last metallization take place without exposing the newly oxidized surface to the atmosphere. Successful production of diodes has been achieved. Work on millimeter wave frequency rectennas incorporating known semiconductor diode technology has been initiated.

Gouker, M. A.↗

NASA NTRS1988

Thermal Remote Anemometer Device

Thermal Remote Anemometer Device developed for remote, noncontacting, passive measurement of thermal properties of sample. Model heated locally by scanning laser beam and cooled by wind in tunnel. Thermal image of model analyzed to deduce pattern of airflow around model. For materials applications, system used for evaluation of thin films and determination of thermal diffusivity and adhesive-layer contact. For medical applications, measures perfusion through skin to characterize blood flow and used to determine viabilities of grafts and to characterize tissues.

Heyman, Joseph S.↗

NASA NTRS1990

Resonant tunneling IR detectors

Researchers propose a novel semiconductor heterojunction photodetector which would have a very low dark current and would be voltage tunable. A schematic diagram of the device and its band structure are shown. The two crucial components of the device are a cathode (InGaAs) whose condition band edge is below the conduction band edge of the quantum wells and a resonant tunneling filter (GaAs-AlGaAs). In a standard resonant tunneling device the electrodes are made of the same material as the quantum wells, and this device becomes highly conducting when the quantum levels in the wells are aligned with the Fermi level in the negatively biased electrode. In contrast, the researchers device is essentially non-conducting under the same bias conditions. This is because the Fermi Level of the cathode (InGaAs) is still well below the quantum levels so that no resonant transport occurs and the barriers (AlGaAs) effectively block current flow through the device. However, if light with the same photon energy as the conduction-band discontinuity between the cathode and the quantum wells, E sub c3-E sub c1, is shone on the sample, free carriers will be excited to an energy corresponding to the lowest quantum level in the well closest to the cathode (hv plue E sub c1 = E sub o). These electrons will resonantly tunnel through the quantum wells and be collected as a photocurrent in the anode (GaAs). To improve the quantum efficiency, the cathode (InGaAs) should be very heavily doped and capped with a highly reflective metal ohmic contact. The thickness of the device should be tailored to optimize thin film interference effects and afford the maximum absorption of light. Because the device relies on resonant tunneling, its response should be very fast, and the small voltages needed to change the responsivity should allow for very high frequency modulation of the photocurrent. In addition, the device is tuned to a specific photon energy so that it can be designed to detect a fairly narrow range of wavelengths. This selectivity is important for reducing the photocurrent due to spurious light sources.

Woodall, Jerry M.↗

NASA NTRS1990

The Black Pearl mine, Arizona - Wolframite veins and stockscheider pegmatite related to an albitic stock

Wolframite-bearing quartz veins flanked by greisen alteration occur at and near the Black Pearl mine, Yavapai County, Arizona. The veins are genetically related to a small albitite stock, and cut a series of Proterozoic metasedimentary and intrusive rocks. The largest vein, the only one mined, is located at the apex of the stock. Field relations imply that this stock is a late-stage differentiate of time 1.4-Ga anorogenic Lawler Peak batholith, which crops out about 3 km to the south. The albitites are of igneous origin and have suffered only minor deuteric alteration. A thin (1 to 2 m) pegmatite unit ('stockscheider') occurs at the contact of the Black Pearl Albitite stock with the country rocks. Directional indicators and other evidence suggest that the pegmatite was formed in the presence of a volatile-rich fluid phase close to the time of magma emplacement. The sudden change from coarse-grained microcline-rich pegmatite to fine-grained, albite-rich albitite suggests pressure quenching, possibly due to escape of fluids up the Black Pearl vein. Stockscheider-like textures typically occur near the apical contacts of productive plutons. The presence or absence of this texture is a useful guide in prospecting for lithophile metal deposits.

Schmitz, Christopher↗

NASA NTRS2005

[Microfabricated X-ray Optics Technology Development for the Constellation X-Mission]

MIT has previously developed advanced methods for the application of silicon microstructures (so-called microcombs) in the precision assembly of foil x-ray optics in support of the Constellation-X Spectroscopy X-ray Telescope (SXT) technology development at the NASA Goddard Space Flight Center (GSFC). During the first year of the above Cooperative Agreement, MIT has developed a new, mature, potentially high- yield process for the manufacturing of microcombs that can be applied to a range of substrates independent of thickness. MIT also developed techniques to extract microcomb accuracy from an assembly truss metrology test stand and to extend the dynamic range of its Shack-Hartmann foil metrology tool. The placement repeatability of foil optics with microcombs in the assembly truss has been improved by a factor of two to approximately 0.15 micron. This was achieved by electric contact determination in favor of determining contact through force measurements. Development work on a stress-free thin foil holder was also supported by this agreement and successfully continued under a different grant.

Schattenburg, Mark L.↗

NASA NTRS1988

Process for making silicon from halosilanes and halosilicons

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Levin, Harry↗

NASA NTRS1987

Process for making silicon

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Levin, Harry↗

NASA NTRS1988

Apparatus for making molten silicon

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Levin, Harry↗

DOE OSTI2026

Controlled lithium stripping enables a stable interface for long-cycling anode-free solid-state batteries

Anode-free solid-state batteries (AFSSBs) are a promising route toward achieving high energy density. In these cells, the anode contains no pre-stored lithium (Li). Instead, the entire Li inventory originates from the cathode and is freshly deposited onto a bare current collector during charging. However, achieving uniform and defect-free Li plating on this bare current collector remains a major challenge, often resulting in low Li plating/stripping efficiency and rapid capacity decay. Here, for the first time, operando neutron imaging is employed to visualize Li plating/stripping behavior in an anode-free full cell with LiNi0.82Mn0.07Co0.11O2 (NMC) as the cathode. Operando measurements reveal that complete stripping of Li leaves isolated Li residues on the current collector, which degrades the interfacial contact between the current collector and the solid-state electrolyte. To mitigate this interfacial issue and promote more uniform Li deposition, we implement a discharge-cutoff-voltage strategy that intentionally retains a thin residual Li layer after stripping. This preserved Li-containing interfacial reservoir not only improves interfacial contact but also serves as an in situ formed seed layer that enables more homogeneous subsequent Li plating. As a result, the optimized anode-free cell with limited stripping depth exhibits excellent long-term cycling stability, maintaining a discharge capacity of 112.1 mAh g−1 with a capacity retention of 80.6% and an average coulombic efficiency of approximately 99.9% after 500 cycles at 0.25 C. In contrast, the cell with a conventional discharge cutoff voltage of 2.8 V exhibits rapid capacity decay, retaining only 59.7 mAh g−1 after 50 cycles with a capacity retention of 40.7%. This work demonstrates that limiting deep stripping to preserve a thin Li-containing interfacial layer can effectively improve the cycling stability of sulfide-based AFSSBs.

Wang, Jiwei [Northeastern University, Boston]↗

NASA NTRS1996

Lubricous Deposit Formed In Situ Between Wearing Surfaces at High Temperatures

Many components of future aircraft will be constructed from novel high-temperature materials, such as superalloys and ceramic composites, to meet expected operating temperatures in excess of 300 C. There are no known liquid lubricants that can lubricate above 300 C without significant decomposition. Solid lubricants could be considered, but problems caused by the higher friction coefficients and wear rates of the solid lubricant film make this an undesirable approach. An alternative method of lubrication is currently being investigated: vapor phase lubrication. In vapor phase lubrication, an organic liquid (in our studies a thioether was used) is vaporized into a flowing air stream that is directed to sliding surfaces where lubrication is needed. The organic vapor reacts at the concentrated contact sliding area generating a lubricous deposit. This deposit has been characterized as a thin polymeric film that can provide effective lubrication at temperatures greater than 400 C. Initial tribological studies were conducted at the NASA Lewis Research Center and Cleveland State University with a high-temperature friction and wear tribometer. A cast iron rod was loaded (a 4-kg mass was used to generate a contact pressure of 1.2 MPa) against a reciprocating, cast iron plate at 500 C. This system was then lubricated with the vapor phase of thioether.

Source record↗

DOE OSTI2026

Identifying Suitable Front Contacts for High‐Efficiency Cd(Se,Te) Solar Cells on Space‐Qualified Cover Glass

Deployment of photovoltaics in space requires devices that combine high-efficiency, low areal mass, and resilience to harsh environments. Historically, high-efficiency multijunction III–V materials have dominated space power systems; however, their high cost and limited manufacturing throughput motivate the exploration of scalable alternatives. While CdTe-based thin-film photovoltaics offer an attractive option, their performance on non-conventional substrates can suffer from front contact instability under higher-temperature processing. Here, the role of front contact chemistry in limiting cell performance is investigated using CdTe-based devices fabricated on 150 μm thick Ceria-doped space-qualified 0214 Corning glass. A matrix of four transparent conducting oxides (TCOs: CTO, AZO, ITO, IZO) combined with two n-type emitters (MZO, IGO) reveals chemical stability at the front interface—rather than absorber composition alone—governs recombination losses, voltage deficits, and device reproducibility. Chemically stable front contact combinations suppress elemental diffusion and interfacial degradation, resulting in significantly improved carrier lifetimes and junction quality. These insights are validated through record-certified Cd(Se,Te) cell efficiencies of 18.4% under AM1.5G and 16.2% under AM0 illumination on ultra-thin glass. Beyond CdTe, this work provides a general framework for the rational selection of TCO/emitter interfaces in superstrate thin-film photovoltaics, including emerging technologies like metal halide perovskites, while enabling high-efficiency, lightweight photovoltaics for space applications.

14 SOLAR ENERGY↗