Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Micromechanical Switches on GaAs for Microwave Applications

In this presentation, we describe the fabrication of micro-electro-mechanical system (MEMS) devices, in particular, of low-frequency multi-element electrical switches using SiO2 cantilevers. The switches discussed are related to micromechanical membrane structures used to perform switching of optical signals on silicon substrates. These switches use a thin metal membrane which is actuated by an electrostatic potential, causing the switch to make or break contact. The advantages include: superior isolation, high power handling capabilities, high radiation hardening, very low power operations, and the ability to integrate onto GaAs monolithic microwave integrated circuit (MMIC) chips.

Randall, John N.↗
NASA NTRS2000

Effects of AEA Cell-Bypass-Switch Closure on Charged EOS-Aqua NiH2 Cell

A viewgraph presentation outlines the effects of AEA cell bypass-switch closure on a charged EOS-Aqua NiH2 cell. The objectives of the presentation are to: (1) Verify the Performance of AEA Cell Bypass Protection Device (CBPD) under simulated EOS-Aqua/Aura flight hardware configuration; (2) Assess the safety of the hardware under an inadvertent firing of CBPD switch, as well as the closing of CBPD switch under simulated high cell impedance; and (3) Confirm that the mode of operation of CBPD switch is the formation of a continuous low impedance path-homogeneous low melting point eutectic (Indium alloy). Details are given on the EOS-Aqua flight hardware, AEA hardware tested, AEA bypass switch schematic, and the tests performed, which include images of equipment and results.

Keys, Denney↗
NASA NTRS1995

Asynchronous Transfer Mode (ATM) Switch Technology and Vendor Survey

Asynchronous Transfer Mode (ATM) switch and software features are described and compared in order to make switch comparisons meaningful. An ATM switch's performance cannot be measured solely based on its claimed switching capacity; traffic management and congestion control are emerging as the determining factors in an ATM network's ultimate throughput. Non-switch ATM products and experiences with actual installations of ATM networks are described. A compilation of select vendor offerings as of October 1994 is provided in chart form.

Berry, Noemi↗
NASA NTRS2003

PWM Switching Frequency Effects on Eddy Current Sensors for Magnetically Suspended Flywheel Systems

A flywheel magnetic bearing (MB) pulse width modulated power amplifier (PWM) configuration is selected to minimize noise generated by the PWMs in the flywheel position sensor system. Two types of noise are addressed: beat frequency noise caused by variations in PWM switching frequencies, and demodulation noise caused by demodulation of high order harmonics of the switching voltage into the MB control band. Beat frequency noise is eliminated by synchronizing the PWM switch frequencies, and demodulation noise is minimized by selection of a switching frequency which does not have harmonics at the carrier frequency of the sensor. The recommended MB PWM system has five synchronized PWMs switching at a non-integer harmonic of the sensor carrier.

Jansen, Ralph↗
NASA NTRS1980

Push-pull switching power amplifier

A true push-pull switching power amplifier is disclosed utilizing two dc-to-dc converters. Each converter is comprised of two inductances, one inductance in series with a DC source and the other inductor in series with the output load, and an electrical energy transferring device with storage capability, namely storage capacitance, with suitable switching means between the inductances to obtain DC level conversion, where the switching means allows bidirectional current (and power) flow, and the switching means of one dc-to-dc converter is driven by the complement of a square-wave switching signal for the other dc-to-dc converter for true push-pull operation. For reduction of current ripple, the inductances in each of the two converters may be coupled, and with proper design of the coupling, the ripple can be reduced to zero at either the input or the output, but preferably the output.

Cuk, Slobodan M.↗
NASA NTRS2008

Low Power Switching for Antenna Reconfiguration

Methods and systems for low power switching are provided. In one embodiment, an optical switching system is provided. The system comprises at least one optically controlled switch adapted to maintain one of an open state and a closed state based on an associated light signal; and at least one light source adapted to output the associated light signal to the at least one switch, wherein the at least one light source cycles the light signal on and off, wherein the at least one light source is cycled on for a sufficient duration of time and with a sufficient periodicity to maintain the optically controlled switch in one of an open state and a closed state.

Bauhahn, Paul E.↗
NASA NTRS2013

Development and Testing of a Variable Conductance Thermal Acquisition, Transport, and Switching System

This paper describes the development and testing of a scalable thermal control architecture for instruments, subsystems, or systems that must operate in severe space environments with wide variations in sink temperature. The architecture is comprised by linking one or more hot-side variable conductance heat pipes (VCHPs) in series with one or more cold-side loop heat pipes (LHPs). The VCHPs provide wide area heat acquisition, limited distance thermal transport, modest against gravity pumping, concentrated LHP startup heating, and high switching ratio variable conductance operation. The LHPs provide localized heat acquisition, long distance thermal transport, significant against gravity pumping, and high switching ratio variable conductance operation. Combining two variable conductance devices in series ensures very high switching ratio isolation from severe environments like the Earth's moon, where each lunar day spans 15 Earth days (270 K sink, with a surface-shielded/space viewing radiator) and each lunar night spans 15 Earth days (80-100 K radiative sink, depending on location). The single VCHP-single LHP system described herein was developed to maintain thermal control of International Lunar Network (ILN) anchor node lander electronics, but it is also applicable to other variable heat rejection space missions in severe environments. The LHPVCHP system utilizes a stainless steel wire mesh wick ammonia VCHP, a Teflon wick propylene LHP, a pair of one-third square meter high  radiators (one capillary-pumped horizontal radiator and a second gravity-fed vertical radiator), a half-meter of transport distance, and a wick-bearing co-located flow regulator (CLFR) to allow operation with a hot (deactivated) radiator. The VCHP was designed with a small reservoir formed by extending the length of its stainless steel heat pipe tubing. The system was able to provide end-to-end switching ratios of 300-500 during thermal vacuum testing at ATK, including 3-5 W/K ON conductance and 0.01 W/K OFF conductance. The test results described herein also include an in-depth analysis of VCHP condenser performance to explain VCHP switching operation in detail. Future multi-VCHP/multi-LHP thermal management system concepts that provide scalability to higher powers/longer transport lengths are also discussed in the paper.

Bugby, D. C.↗
NASA NTRS2013

Thermal Control Using Liquid-Metal Bridge Switches

A short term effort (3-months) was undertaken to demonstrate the feasibility of a novel method to locally control the heat transfer rate and demonstrate the potential to achieve a turndown ratio of approximately 10:1. The technology had to be demonstrated to be at a TRL of 2-3, with a plan to advance it to a TRL 5-6. Here, we show that the concept recently developed in our laboratory, namely the pinned-contact, double droplet switch made by overfilling a hole drilled in a suitable substrate can be implemented with a low-melting temperature metal. When toggled near a second substrate, a liquid bridge can be reversibly connected or disconnected, on demand. We have shown experimentally that liquid-metal bridge switches can be made from gallium with a suitable choice of substrate materials, activation strategies, and control techniques. Individual as well as arrays of gallium bridge switches were shown to be feasible and can be robustly controlled. The very short response time of the bridge connection and disconnection (on the order of 1 millisecond) provides for utility in a wide range of applications. The liquid bridge switches may be controlled actively or passively. We have shown through computations and analysis that liquid bridge switches provide locally large turndown ratios (on the order of 103:1), so a relatively sparse packing of them would be needed to obtain the desired turndown ratio of 10:1. For the laboratory demonstrations, pressure activation was utilized. Simple designs for a passive control strategy are presented which are highly attractive for several reasons, including i) large turndown ratio, ii) no solid-moving parts, and iii) stable operation. Finally, we note that passive systems do not require any electronics for their control. This along with the relatively small molecular weight of candidate materials for the system, makes for a robust design outside of Earth?s magnetic field, where spacecraft are subject to significant radiation bombardment.

Hirsa, Amir H.↗
NASA NTRS2015

The Role of Individual Differences in Executive Attentional Networks and Switching Choices in Multi-Task Management

Individual differences in cognitive processing relate to critical performance differences in real-world environments. Task switching is required for many of them and especially for task management during overload. Research exploring individual differences related to switching behavior (both frequency, and adherence to optimal switch times) is, however, sparse. We examined these relationships here, using the attentional network task to index executive control, and an ongoing tracking task (within a larger suite of concurrent task demands) to examine switching behavior. The results failed to support a general relationship between executive control and frequency in a complex, heterogeneous multi-task environment. However, higher executive control participants more successfully exploited optimal switching times, highlighting the varying role of individual differences in task management, when choice is unconstrained.

Gutzwiller, Robert S.↗
DOE OSTI2023

Illumination frustums for photoconductive switches

Methods and devices for illuminating a photoconductive switch consisting of an optically actuated photoconductive material situated between two electrodes are described. Light from a light source is coupled to an optical fiber, which is attached to a frustum, the other side of which is proximate to the photoconductive switch. Light from the optical fiber enters the frustum, spreads out, and enters the photoconductive switch via the top-side electrode. Some of the light is absorbed, while the remaining light reflects off the bottom-side electrode, travels back through the photoconductive switch, and any unabsorbed light reenters the frustum. The geometry of the frustum is configured such that most of the light reflects back into the switch itself with only a negligible fraction escaping from the optical fiber, which advantageously results in near total utilization of the light.

Rushford, Michael↗
DOE OSTI2023

Deterministic Current–Induced Perpendicular Switching in Epitaxial Co/Pt Layers without an External Field

Current–induced spin–orbit torques (SOTs) have emerged as a powerful tool to control magnetic elements and non–uniform magnetic textures such as domain walls and skyrmions. SOT–induced switching of perpendicular magnetization generally requires an external field to break the rotational symmetry of the spin–orbit effective fields responsible for the deterministic reversal. The proposed mechanisms to eliminate this requirement often rely on complex multilayer structures that necessitate laborious optimization in the material and spin transport properties, making them less attractive for applications. Herein, current–induced, external field–free switching of an epitaxial MgO/Pt/Co trilayer with an extremely large perpendicular anisotropy in excess of 3 Tesla is reported. It is found that switching occurs due to the interplay of strong SOTs, local anisotropy fluctuations, and the Dzyaloshinkii–Moriya interaction inherent to this epitaxial system. Finally, given that these layers constitute the base stack of a magnetic tunnel junction, this switching mechanism offers the most technologically viable path toward devices such as field–free SOT–based magnetic random–access memories.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Omega-Limit Sets and Input-To-State Stability in Power Grids with Switching Equilibria

This paper studies a power transmission system with both conventional generators (CGs) and distributed energy assets (DEAs) providing frequency control. We consider an operating condition with demand aggregating two dynamic components: one that switches between different values on a finite set, and one that varies smoothly over time. Such dynamic operating conditions may result from protection scheme activations, external cyber-attacks, or due to the integration of dynamic loads, such as data centers. Mathematically, the dynamics of the resulting system are captured by a system that switches between a finite number of vector fields - or modes -, with each mode having a distinct equilibrium point induced by the demand aggregation. To analyze the stability properties of the resulting switching system, we leverage tools from hybrid dynamic inclusions and the concept of ..omega.. -limit sets from sets. Specifically, we characterize a compact set that is semi-globally practically asymptotically stable under the assumption that the switching frequency and load variation rate are sufficiently slow. For arbitrarily fast variations of the load, we use a level-set argument with multiple Lyapunov functions to establish input-to-state stability of a larger set and with respect to the rate of change of the loads. The theoretical results are illustrated via numerical simulations on the IEEE 39-bus test system.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Electrical Switching and Imaging of Antiferromagnetic Spins in Perovskite Epitaxial Thin Films

Electrical control of antiferromagnets is essential for the field of antiferromagnetic spintronics that promises ultrafast speed and terahertz dynamics. However, the large family of complex oxide antiferromagnets such as perovskites have been largely unexplored. Here, we demonstrate electrical switching and detection of Néel vector in LaFeO 3 epitaxial thin films with an epitaxy-enabled biaxial anisotropy, of which the switching behavior is understood by comparing to magnetic field controlled spin Hall magnetoresistance measurements. The electrical switching is corroborated by imaging of antiferromagnetic domains using X-ray Magnetic Linear Dichroism Photoemission Electron Microscopy. Electrical switching of 3-nm and 10-nm LaFeO 3 films was achieved over a wide temperature range of 25 to 300 K. This work offers an attractive platform for exploration of antiferromagnetic spintronics and other emerging phenomena such as potential insulating altermagnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

The 1.2 kV 4H-SiC BiDirectional Field Effect Transistor (BiDFET) is the first monolithic SiC bidirectional switch, which offers a lower voltage drop and semiconductor devices count alternative to the reverse-voltage-blocking (RB) switch used in the current-source converters (CSC). The bidirectional switch based CSC also allows DC-link current reversal for bidirectional power flow and provides multiple system-level benefits in a buck-boost AC/DC system consisting of buck-type DC/DC converter and CSC. This paper discusses the selection of buck converter duty cycle and CSC modulation index for the system’s buck-boost operation with a wide variation in DC voltage. CSC modulation schemes categorized based on the number of hard-turn-on transitions per switching cycle are also analyzed along with the three-step and four-step commutation schemes that are essential for the CSC commutation cells. Finally, the different schemes are evaluated and compared through the experimental results of a 10 kW, 480 VRMS, LL/ (400 − 800) V AC/DC system.

Bidirectional switches, four-quadrant switches, cu↗
DOE OSTI2025

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Abstract Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO x /TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage ( I–V ) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Why it is Unfortunate that Linear Machine Learning “Works” so well in Electromechanical Switching of Ferroelectric Thin Films

Machine learning (ML) is relied on for materials spectroscopy. It is challenging to make ML models fail because statistical correlations can mimic the physics without causality. Here, using a benchmark band-excitation piezoresponse force microscopy polarization spectroscopy (BEPS) dataset the pitfalls of the so-called “better”, “faster”, and “less-biased” ML of electromechanical switching are demonstrated and overcome. Using a toy and real experimental dataset, it is demonstrated how linear nontemporal ML methods result in physically reasonable embedding (eigenvalues) while producing nonsensical eigenvectors and generated spectra, promoting misleading interpretations. A new method of unsupervised multimodal hyperspectral analysis of BEPS is demonstrated using long-short-term memory (LSTM) β-variational autoencoders (β-VAEs) . By including LSTM neurons, the ordinal nature of ferroelectric switching is considered. Further, to improve the interpretability of the latent space, a variational Kullback–Leibler-divergency regularization is imposed . Finally, regularization scheduling of β as a disentanglement metric is leveraged to reduce user bias. Combining these experiment-inspired modifications enables the automated detection of ferroelectric switching mechanisms, including a complex two-step, three-state one. Ultimately, this work provides a robust ML method for the rapid discovery of electromechanical switching mechanisms in ferroelectrics and is applicable to other multimodal hyperspectral materials spectroscopies.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ligand Substituent Effects on the Electronic Properties of Lindqvist‐Type Polyoxometalate Multi‐Level‐Switches in the Gas Phase, Solution and on Surfaces

Abstract Although the intrinsic electronic properties of polyoxometalates (POMs) can be greatly influenced by modifying them with organic substituents, their resistive switching behavior on surfaces dependent on the organic substituents remains largely unexplored. In this work, we assessed the importance of electron‐withdrawing and electron‐donating ligand substituents on the material properties of a series of hybrid Lindqvist‐type hexavanadates TBA 2 [V 6 O 13 ((OCH 2 ) 3 CCH 2 OH) 2 ] (TBA 2 V 6 ‐OH), TBA 2 [V 6 O 13 ((OCH 2 ) 3 CMe) 2 ] (TBA 2 V 6 ‐Me), TBA 2 [V 6 O 13 ((OCH 2 ) 3 CNHCOCH 2 Cl) 2 ] (TBA 2 V 6 ‐Cl), and TBA 2 [V 6 O 13 ((OCH 2 ) 3 CNHCOCH 2 ‐OOCC 10 H 15 ) 2 ] (TBA 2 V 6 ‐Ad) as potential resistive random‐access memory (ReRAM) components. Compared to their redox behavior in solution, changing the ligand substituents on surfaces results in no significant effect on the potential and, thus, no effect on the resistance steps in the current‐voltage profiles. However, while the current‐voltage characteristics do not change, the peripheral metal‐free substituents in the trisalkoxide framework of Lindqvist‐type hexavanadate molecules influence the adsorption and switching stability of these POMs on gold. This work highlights the noticeable differences between hexavanadate's redox properties in solution (which follow the trend observed in the gas phase) and hexavanadate's resistive switching properties on conducting surfaces. Importantly, their multi‐state switching behavior is not significantly altered by the different type of substituent at the periphery of the trisalkoxo ligands.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Single-shot switching in Tb/Co-multilayer based nanoscale magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal of the magnetization by an ultrashort laser pulse is extremely important. Here we demonstrate single-shot switching of Tb/Co-multilayer based nanoscale MTJs by combining the optical writing and the electrical read-out methods. A 90-fs-long laser pulse switches the magnetization of the storage layer (SL). The change in the tunneling magnetoresistance (TMR) between the SL and a reference layer (RL) is probed electrically across the oxide barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The nature of the magnetization reversal of both SL and RL in a continuous film is probed with a depth-resolved magneto-optical Kerr effect (MOKE) magnetometry. The ultrafast dynamics in the continuous full-MTJ stack is investigated with the time-resolved pump–probe technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices.

36 MATERIALS SCIENCE↗