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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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260 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Chemical and structural characterization of EUV photoresists as a function of depth by standing-wave x-ray photoelectron spectroscopy

The success in the miniaturization of the electronic device constituents depends mostly on the photolithographic techniques. Recently, to achieve patterning at the sub-10-nm node, extreme ultraviolet (EUV) lithography has been introduced into high volume production. Continued scaling of EUV via increased numerical aperture to achieve nodes at 3-nm and below requires the development of fundamentally new patterning materials and new characterization methods. Current EUV-resist film thicknesses are in the 20- to 40-nm range, and further thickness reduction is required for the next generation. Therefore, interfaces become exceedingly important, and the properties of the resist film would be dominated by top and bottom interfacial effects. X-ray photoelectron spectroscopy (XPS) combined with standing-wave excitation (SW-XPS), a fairly new method in the EUV lithography field, previously had been largely applied in multilayers and superlattices for characterizing the composition and electronic structure of buried layers and interfaces as a function of depth. We applied the SW-XPS method to organic/inorganic photoresists to provide depth-selective information on their structural and chemical conditions of as a function of temperature, EUV exposure, different underlayers, and other fundamental parameters. As a first attempt, we perform an SW-XPS feasibility study on self-assembled monolayer (SAM) films after exposure to an electron beam. By SW-XPS, we determined that the interface between the Al 2 O 3 underlayer and the SAMs is smooth, with a mean roughness of about 0.2 nm. Moreover, we determined that the SAM chains are, on average, tilted by 1/430 deg off the sample normal. The SW-XPS results also suggest that the SAM is not a perfectly aligned and uniform monolayer, with some areas having thickness higher than a single monolayer. We demonstrated that SW-XPS can provide useful information on ultrathin materials with high potential for being used as a characterization method of organic/inorganic photoresists.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Amorphous 2D Materials – A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures

III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Â. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.

Lu, Kuangye↗
DOE OSTI2022

Amorphous 2D Materials – A Novel Platform for Remote Epitaxy and Nanopatterned Epitaxy of III-V Semiconductors with Low Decomposition Temperatures

III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Å. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.

Lu, Kuangye↗
DOE OSTI2021

Improving the astrometric solution of the Hyper Suprime-Cam with anisotropic Gaussian processes

Context. We study astrometric residuals from a simultaneous fit of Hyper Suprime-Cam images. Aims. We aim to characterize these residuals and study the extent to which they are dominated by atmospheric contributions for bright sources. Methods. We used Gaussian process interpolation with a correlation function (kernel) measured from the data to smooth and correct the observed astrometric residual field. Results. We find that a Gaussian process interpolation with a von Kármán kernel allows us to reduce the covariances of astrometric residuals for nearby sources by about one order of magnitude, from 30 mas 2 to 3 mas 2 at angular scales of ~1 arcmin. This also allows us to halve the rms residuals. Those reductions using Gaussian process interpolation are similar to recent result published with the Dark Energy Survey dataset. We are then able to detect the small static astrometric residuals due to the Hyper Suprime-Cam sensors effects. We discuss how the Gaussian process interpolation of astrometric residuals impacts galaxy shape measurements, particularly in the context of cosmic shear analyses at the Rubin Observatory Legacy Survey of Space and Time.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Fracture Description of the HFTS-2 Slant Core, Delaware Basin, West Texas

Previous work in the Midland Basin Hydraulic Fracture Test Site project (HFTS1) has shown the value of core recovered from a stimulated volume in providing information on the geometry and extent of hydraulic fractures. This project (HFTS2) is in the Wolfcamp Formation of the Delaware Basin. A slant core through the stimulated volume was acquired above and below a stimulated well and the results of the fracture description are presented here. Here, nine, 3-inch-diameter whole cores from the slant well were examined for fractures prior to slabbing, together with a CT scan of the core. We used criteria developed during the HFTS1 project to identify hydraulic, natural, drilling-induced and core-handling fractures. Material collected from a few fracture faces was cleaned, sieved, and examined under a microscope to look for proppant. A total of 1261 fractures, including 500 hydraulic fractures, were described in 948 feet of core. Hydraulic fractures are not evenly distributed through the cores; they tend to occur in clusters. Many are remarkably planar, smooth, and featureless, while others have twist hackles, steps, plumose, and kinks. Natural, subvertical fractures, mostly less than 1 mm in width, sealed with blocky calcite, are oriented NE-SW (Set 1) and WNW-ESE (Set 2). Two Set 1 fractures have drusy cement on parted faces and were possibly open prior to drilling. A few subvertical sealed fractures with different orientations are also present. Bed-parallel natural fractures, most having fibrous cement (beef), and some showing top-to-north bed-parallel shear are present. Faults with normal/oblique movement were found in one part of the core. Drilling induced and core-handling breaks were identified in all cores, and were also noted to have reactivated some natural fractures. The results from this work will allow hydraulic fracture distribution relative to the stimulated well to be assessed. The number of fractures is generally greater than the number of perforations, but these can be compared for different stages and perforation clusters. Surface features provide information about the direction of hydraulic fracture propagation and about segmentation and bifurcation that might increase the number of fracture strands. Reactivation of natural fractures, including bedding-parallel fractures, occurs although the mechanism of parting is mostly unknown. The wider HFTS2 project will make use of this fracture description to improve hydraulic fracture modeling (geomechanics and engineering), to help explain pressure depletion and fiber optics observations (reservoir depletion and frac geometry), to help verify indirect fracture diagnostic techniques such as microseismic monitoring (geophysics), and to help calibrate horizontal well image logs.

58 GEOSCIENCES↗
DOE OSTI2024

Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

III-V photovoltaic devices have demonstrated remarkable performance in many applications, and spalling is a promising technique for reducing device costs by recovering the substrate for reuse. In this study, we investigate the in situ planarization of A-directionally spalled GaAs(100) substrates using metal-organic vapor phase epitaxy (MOVPE) grown C:GaAs with CCl4 as the carbon source. We have characterized the (100)-oriented growth for various CCl4 flow rates and observed that the CCl4 or its by-products promote material diffusion from the facet tops to the underlying valleys. For facets with a height of 5 ..mu..m on a substrate with an A-spall and 6 degreesB -offcut, it took 7 ..mu..m of C:GaAs to planarize the substrate. For a similar sample, with a 6 degreesA -offcut, it required 2 ..mu..m of growth to fill the valleys but there were remnant facets.

III-V↗
DOE OSTI2023

Embedding ceramic components in metal structures with hybrid directed energy deposition

The combined benefit of both additive and subtractive manufacturing within the same gantry system enables hybrid directed energy deposition to create complex geometries with smooth surface finish and superior dimensional accuracy. Moreover, with layer-by-layer access to the structure during both the addition and subtraction of material, the insertion of components is now possible, assuming the components can survive the high temperatures associated with the subsequent metal deposition. Ceramic inserts are of interest for a variety of reasons including (1) to create complex interwoven ductile/brittle composites for ballistics or high-temperature applications or (2) to integrate high-temperature strain or temperature sensors protected within ceramic substrate subsumed into a larger metal structure. Here, in this work, stainless steel substrates were machined to create an internal cavity for the insertion of a ceramic component. During the investigation of several different over-the-ceramic deposition strategies, components were inserted, and different process sequences were allowed to continue to envelop the inserted ceramic with varying success. Unmelted powder was used to serve both as a thermal buffer and to provide a flush surface upon which the laser cladding could continue. Subsequent depositions were attempted with both dry and wet powder (addition of machining coolant to wet). The wet powder has previously been demonstrated to not significantly impact the mechanical properties of a final structure and provided a thermal barrier to protect the ceramic piece from the extreme temperatures of the final metal deposition. The wetting of the powder provided stability and minimized displacement caused by the powder flow from the laser cladding head. Finally, the use of an oblique angle for laser cladding allowed for the redirection of some fraction of the introduced thermal energy away from the ceramic component and, consequently, improved the survival of the ceramic inserts. With this combination of techniques, ceramic inserts survived full embedding within a 3D-printed stainless steel structure.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Revealing the Predominant Surface Facets of Rough Cu Electrodes under Electrochemical Conditions

Metal electrodes with rough surfaces are frequently found to convert CO or CO 2 to hydrocarbons and oxygenates with high selectivity and at high reaction rates in comparison with their smooth counterparts. The atomic-level morphology of a rough electrode is likely one key factor responsible for its comparatively high catalytic selectivity and activity. However, few methods are capable of probing the atomic-level structure of rough metal electrodes under electrocatalytic conditions. As a result, the nuances in the atomic-level surface morphology that control the catalytic characteristics of these electrodes have remained largely unexplored. Because the C≡O stretching frequency of atop-bound CO (CO atop ) depends on the coordination of the underlying metal atom, the IR spectrum of this reaction intermediate on the copper electrode could, in principle, provide structural information about the catalytic surface during electrolysis. However, other effects, such as dynamic dipole coupling, easily obscure the dependence of the frequency on the surface morphology. Further, in the limit of low CO atop coverage, where coupling effects are small, the C≡O stretching frequencies of CO atop on Cu(111) and Cu(100) facets are virtually identical. Therefore, on the basis of the C≡O stretching frequency, it is not straightforward to distinguish between these two ubiquitous surface facets, which exhibit vastly different CO reduction activities. Herein, we show that key features of the atomic-level surface morphology of rough copper electrodes can be inferred from the potential dependence of the line shape of the C≡O stretching band of CO atop . Specifically, we compared two types of rough copper thin-film electrodes that are routinely employed in the context of surface-enhanced infrared absorption spectroscopy (SEIRAS). We found that copper films that are electrochemically deposited on Si-supported Au films (CuAu–Si) are poor catalysts for the reduction of CO to ethylene in comparison to copper films (Cu–Si) that are electrolessly deposited onto Si crystals. As quantified by differential electrochemical mass spectrometry (DEMS), the onset potential for ethylene is ~200 ± 65 mV more cathodic for CuAu–Si than that for Cu–Si. To reveal the origin of the disparate catalytic properties of Cu–Si and CuAu–Si, we probed the surfaces of the electrodes with cyclic voltammetry (CV) and SEIRAS. The CV characterization suggests that the (111) surface facet predominates on CuAu–Si, whereas the (100) facet is more common on Cu–Si. SEIRAS reveals that the line shape of the C≡O stretching of CO atop is composed of two bands that are attributable to CO atop on terrace and defect sites. The different surface structures manifest themselves in the form of starkly different potential dependences of the line shape of the C≡O stretching mode of CO atop on the two types of electrodes. With a simple Boltzmann model that considers the different adsorption energies of CO atop on terrace and defect sites, and the resulting CO atop populations on terrace and defect sites, we deduced that the observed electrode-specific potential dependence of the line shape is consistent with the presence of different predominant terrace sites on the two types of films. This strategy for assessing the atomic-level morphology is not restricted to SEIRAS but could also be applied to the C≡O stretching bands recorded with surface-enhanced Raman spectroscopy (SERS), which is suitable for probing a wide range of rough copper electrodes. Therefore, with this work, we establish the potential dependence of the C≡O stretching band of CO atop as a probe of the atomic-level surface structure of rough metal electrodes under electrochemical conditions. When it is coupled with complementary techniques, this methodology provides essential structural information for further improvement in the reaction selectivity of rough metal electrodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗