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The long term objectives are to develop optical multiplexers/demultiplexers, different wavelength and modulation stable semiconductor lasers and high data rate transceivers, as well as to test and evaluate fiber optic networks applicable to the Space Station. Progress in each of the above areas is briefly discussed.
Papers are presented on the picosecond electronic framing camera, photogrammetric techniques using high-speed cineradiography, picosecond semiconductor lasers for characterizing high-speed image shutters, the measurement of dynamic strain by high-speed moire photography, the fast framing camera with independent frame adjustments, design considerations for a data recording system, and nanosecond optical shutters. Consideration is given to boundary-layer transition detectors, holographic imaging, laser holographic interferometry in wind tunnels, heterodyne holographic interferometry, a multispectral video imaging and analysis system, a gated intensified camera, a charge-injection-device profile camera, a gated silicon-intensified-target streak tube and nanosecond-gated photoemissive shutter tubes. Topics discussed include high time-space resolved photography of lasers, time-resolved X-ray spectrographic instrumentation for laser studies, a time-resolving X-ray spectrometer, a femtosecond streak camera, streak tubes and cameras, and a short pulse X-ray diagnostic development facility.
Gain control of a single stage GaAs MESFET amplifier is demonstrated by the use of optical illumination of photon energy greater than the GaAs bandgap. The optical illumination is supplied by a semiconductor laser diode and is coupled to the Schottky gate of the MESFET by an optical fiber. The increase in gain is observed to be as much as 5.15 dB when the MESFET is biased close to pinchoff, that is, V(sub gs) equals -1.5 V and with optical illumination of 1.5 mW. The computed maximum available gain (MAG) and current gain (bar h sub 21 bar) from the de-embedded s-parameters show that MAG is unaffected by optical illumination, however, bar h(sub 21)bar increases by more than 2 dB under optical illumination of 1.5 mW. The maximum frequency of oscillation (F sub max) and the unity current gain cut-off frequency (F sub t) obtained by extrapolating the MAG and bar h(sub 21)bar curves, respectively, show that the F(sub max) is insensitive to optical illumination but F(sub t) increases by 5 GHz.
A low loss optical isolator suitable for fiber-optic uses has been assembled from commercial components. The isolator exhibits reverse isolation of greater than 70 dB, with a forward loss of less than 1.3dB. This system provides an effective approach for reducing instabilities encountered in the output signal of semiconductor lasers in certain applications of fiber-optic systems. The paper presents a phenomenological explanation for the superior performance of the isolator system.
Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.
Proposed optoelectronic integrated-circuit device serves as "universal" or standard interface for transmission and reception of digital and analog signals in communication, data-processing, and control systems. Eliminates need for custom design of interface circuitry in sense that it embodies "master-chip" design easily adaptable to use with specific equipment. Includes directly modulated semiconductor laser to generate light signals for transmission along optical fiber; positive/intrinsic/negative, avalanche, or other photodiode to detect light signals received along another optical fiber;and driving, synchronizing, preamplifying, and signal-regenerating circuitry. Muliplexes electronic signals before transmission and/or demultiplexes electronic signals after reception.
A tunable infrared detector which employs a vanishing band gap semimetal material provided with an induced band gap by a magnetic field to allow intrinsic semiconductor type infrared detection capabilities is disclosed. The semimetal material may thus operate as a semiconductor type detector with a wavelength sensitivity corresponding to the induced band gap in a preferred embodiment of a diode structure. Preferred semimetal materials include Hg(1-x)Cd(x)Te, x is less than 0.15, HgCdSe, BiSb, alpha-Sn, HgMgTe, HgMnTe, HgZnTe, HgMnSe, HgMgSe, and HgZnSe. The magnetic field induces a band gap in the semimetal material proportional to the strength of the magnetic field allowing tunable detection cutoff wavelengths. For an applied magnetic field from 5 to 10 tesla, the wavelength detection cutoff will be in the range of 20 to 50 micrometers for Hg(1-x)Cd(x)Te alloys with x about 0.15. A similar approach may also be employed to generate infrared energy in a desired band gap and then operating the structure in a light emitting diode or semiconductor laser type of configuration.
The main areas of research being conducted at NASA Goddard Space Flight Center are reviewed. Research on transmitter source technology is addressed, emphasizing the development of AlGaAs semiconductor laser diodes. Research on receiver technology is examined, and progress being made in the development of the Pointing, Acquisition, and Tracking System (PATS) is reviewed. Plans for an in-space technology demonstration are briefly discussed.
Strong optically induced absorption modulation has been achieved in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. The use of delta-doping has enabled efficient modulation in short-period structures using a low-power semiconductor laser. With an excitation intensity of 100 mW/sq cm an absolute quantum well absorption change of more than 9000 cm has been measured corresponding to a differential absorption change as high as 58 percent at the excitonic resonance.
Photon counting with lidar returns is usually limited to low light levels, while wide dynamic range is achieved by counting for long times. The broad emission spectrum of inexpensive high-power semiconductor lasers makes receiver filters pass too much background light for traditional photon counting in daylight. Very high speed photon counting is possible, however, at more than 500 MHz which allows the construction of eyesafe lidar operating in the presence of bright clouds. Detector improvements are possible to count to 20 GHz producing a single shot dynamic range of ten decades.
Poster presentation abstracts from the tenth International Conference on Crystal Growth (ICCG) (Aug. 16-21, 1992) are provided. Topics discussed at the conference include crystal growth mechanisms, superconductors, semiconductors, laser materials, optical materials, and biomaterials. Organizing committees, ICCG advisory board and officers, and sponsors of the conference are also included.
Coherent summation of the output of two saturated traveling-wave amplifiers, each injected from a common semiconductor laser and all operated CW, has resulted in a single diffraction-limited beam containing 93 percent of the power originally contained in the two individual amplified beams. The 372 mW of power in a single diffraction-limited lobe is a 1.5-fold enhancement over the power available from a single amplifier.
For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.
Ferroelectric memories with enhanced photoresponse leading to improved nondestructive optoelectronic readout and lower power demand proposed. Memories improved versions of devices described in "Rapid, Nondestructive Readout From Ferroelectric Memory" (NPO-18551). In proposed application, array of nonvolatile ferroelectric memory cells fabricated by standard very-large-scale integrated-circuit techniques and flip-bonded onto similarly fabricated array of semiconductor lasers, {see "Optically Addressable, Ferroelectric Memory With NDRO" (NPO-18573)}.
Novel photonic oscillator developed to serve as ultrastable source of microwave and millimeter-wave signals. In system, oscillations generated photonically, then converted to electronic form. Includes self-mode-locked semiconductor laser producing stream of pulses, detected and fed back to laser as input. System also includes fiber-optic-delay-line discriminator, which detects fluctuations of self-mode-locking frequency and generates error signal used in negative-feedback loop to stabilize pulse-repetition frequency.
Since 1975, MECANEX S.A. has been manufacturing components for solar array drives and mechanisms used in space applications. In 1991, work was started in an early phase C (Engineering Model) on a Coarse Pointing Mechanism Assembly (CPMA) for the Semiconductor-laser Inter-satellite Link EXperiment (SILEX). This paper deals with the history, the evolution, and the lessons learned from taking over a pre-design in 1991 to the delivery of last flight models (FM 5 & 6) in 1995.
This report describes work performed by SDL in the development of monolithically-integrated master oscillator power amplifiers under the NASA-SCAR research contract. The goals of the program were to demonstrate high power diffraction-limited operation from a semiconductor laser with the following characteristics: (1) Output power of 0.5 to 1.0 W continuous-wave (cw); (2) Single spectral mode with greater than 20 dB of side mode suppression; (3) Single spatial mode operation; (4) Modulation capability of 0.5 GHz; and (5) Operating wavelength between 830-860 nm. Cw diffraction-limited output powers as high as 2.2 W were achieved while maintaining a single longitudinal mode. Side mode suppression ratios greater than 20 dB are typically obtained. The single spatial mode output has a Strehl ratio estimated at 0.85, and a high-speed modulation capability was demonstrated with a small-signal 3-dB roll-off at 1.0 GHz. Finally, all of this performance was obtained in the 860 nm wavelength band, which corresponds to the peak sensitivity of Si detectors. During the first option period, three deliverables were fabricated and delivered that included 1 distributed Bragg reflector (DBR) laser operating at 970 nm, 1 DBR laser operating at 860 nm, and one monolithic flared amplifier master oscillator power amplifier (MFA-MOPA) providing 0.5 W cw diffraction-limited output. During the second option period, a total of 5 MFA-MOPA devices were delivered, each operating to better than 1 W cw diffraction-limited at 860 nm.
In view of the recent advances in the area of solid state and semiconductor lasers has created new possibilities for the development of compact and reliable coherent lidars for a wide range of applications. These applications include: Automated Rendezvous and Capture, wind shear and clear air turbulence detection, aircraft wake vortex detection, and automobile collision avoidance. The work performed by the UAH personnel under this Delivery Order, concentrated on design and analyses of a compact coherent lidar system capable of measuring range and velocity of hard targets, and providing air mass velocity data. The following is the scope of this work. a. Investigate various laser sources and optical signal detection configurations in support of a compact and lightweight coherent laser radar to be developed for precision range and velocity measurements of hard and fuzzy targets. Through interaction with MSFC engineers, the most suitable laser source and signal detection technique that can provide a reliable compact and lightweight laser radar design will be selected. b. Analyze and specify the coherent laser radar system configuration and assist with its optical and electronic design efforts. Develop a system design including its optical layout design. Specify all optical components and provide the general requirements of the electronic subsystems including laser beam modulator and demodulator drivers, detector electronic interface, and the signal processor. c. Perform a thorough performance analysis to predict the system measurement range and accuracy. This analysis will utilize various coherent laser radar sensitivity formulations and different target models.