Results for “semiconducting” — Page 15

NASA NTRS2013

Silicon/Carbon Nanotube Photocathode for Splitting Water

A proof-of-concept device is being developed for hydrogen gas production based on water-splitting redox reactions facilitated by cobalt tetra-aryl porphyrins (Co[TArP]) catalysts stacked on carbon nanotubes (CNTs) that are grown on n-doped silicon substrates. The operational principle of the proposed device is based on conversion of photoelectron energy from sunlight into chemical energy, which at a later point, can be turned into electrical and mechanical power. The proposed device will consist of a degenerately n-doped silicon substrate with Si posts covering the surface of a 4-in. (approximately equal to 10cm) wafer. The substrate will absorb radiation, and electrons will move radially out of Si to CNT. Si posts are designed such that the diameters are small enough to allow considerable numbers of electrons to transport across to the CNT layer. CNTs will be grown on top of Si using conformal catalyst (Fe/Ni) deposition over a thin alumina barrier layer. Both metallic and semiconducting CNT will be used in this investigation, thus allowing for additional charge generation from CNT in the IR region. Si post top surfaces will be masked from catalyst deposition so as to prevent CNT growth on the top surface. A typical unit cell will then consist of a Si post covered with CNT, providing enhanced surface area for the catalyst. The device will then be dipped into a solution of Co[TArP] to enable coating of CNT with Co(P). The Si/CNT/Co [TArP] assembly then will provide electrons for water splitting and hydrogen gas production. A potential of 1.23 V is needed to split water, and near ideal band gap is approximately 1.4 eV. The combination of doped Si/CNT/Co [TArP] will enable this redox reaction to be more efficient.

Amashukeli, Xenia↗

NASA NTRS2013

Preparation of a Bimetal Using Mechanical Alloying for Environmental or Industrial Use

Following the 1976 Toxic Substances Control Act ban on their manufacture, PCBs remain an environmental threat. PCBs are known to bio-accumulate and concentrate in fatty tissues. Further complications arise from the potential for contamination of commercial mixtures with other more toxic chlorinated compounds such as polychlorinated dibenzodioxins (PCDDs) and polychlorinated dibenzofurans (PCDFs). Until recently, only one option was available for the treatment of PCB-contaminated materials: incineration. This may prove to be more detrimental to the environment than the PCBs themselves due to the potential for formation of PCDDs. Metals have been used for the past ten years for the remediation of halogenated solvents and other contaminants in the environment; however, zero-valent metals alone do not possess the activity required to dehalogenate PCBs. Palladium has been shown to act as an excellent catalyst for the dechlorination of PCBs with active metals. This invention is a method for the production of a palladium/magnesium bimetal capable of dechlorinating PCBs using mechanical milling/mechanical alloying. Other base metals and catalysts may also be alloyed together (e.g., nickel or zinc) to create a similarly functioning catalyst system. Several bimetal catalyst systems currently can be used for processes such as hydrogen peroxide synthesis, oxidation of ethane, selective oxidation, hydrogenation, and production of syngas for further conversion to clean fuels. The processes for making these bimetal catalysts often involve vapor deposition. This technology provides an alternative to vapor deposition that may provide equally active catalysts. A hydrogenation catalyst including a base material coated with a catalytic metal is made using mechanical milling techniques. The hydrogenation catalysts are used as an excellent catalyst for the dehalogenation of contaminated compounds and the remediation of other industrial compounds. The mechanical milling technique is simpler and cheaper than previously used methods for producing hydrogenation catalysts. Preferably, the hydrogenation catalyst is a bimetallic particle formed from a zero-valent iron or zero-valent magnesium particle coated with palladium that is impregnated onto a high-surface-area graphite support. The zero-valent metal particles should be microscale or nanoscale zero-valent magnesium or zero-valent iron particles. Other zero-valent metal particles and combinations may be used. Additionally, the base material may be selected from a variety of minerals including, but not limited to, alumina and zeolites. The catalytic metal is preferably selected from the group consisting of noble metals and transition metals, preferably palladium. The mechanical milling process includes milling the base material with a catalytic metal impregnated into a high-surface-area support to form the hydrogenation catalyst. In a preferred mechanical milling process, a zero-valent metal particle is provided as the base material, preferably having a particle size of less than about 10 microns, preferably 0.1 to 10 microns or smaller, prior to milling. The catalytic metal is supported on a conductive carbon support structure prior to milling. For example, palladium may be impregnated on a graphite support. Other support structures such as semiconductive metal oxides may also be used.

Quinn, Jacqueline↗

NASA NTRS2017

Highly Conductive Wire: Cu Carbon Nanotube Composite Ampacity and Metallic CNT Buckypaper Conductivity

NASA is currently working on developing motors for hybrid electric propulsion applications in aviation. To make electric power more feasible in airplanes higher power to weight ratios are sought for electric motors. One facet to these efforts is to improve (increase) the conductivity and (lower) density of the magnet wire used in motors. Carbon nanotubes (CNT) and composites containing CNT are being explored as a possible way to increase wire conductivity and lower density. Presented here are measurements of the current carrying capacity (ampacity) of a composite made from CNT and copper. The ability of CNT to improve the conductivity of such composites is hindered by the presence of semiconductive CNT (s-CNT) that exist in CNT supplies naturally, and currently, unavoidably. To solve this problem, and avoid s-CNT, various preferential growth and sorting methods are being explored. A supply of sorted 95 metallic CNT (m-CNT) was acquired in the form of thick film Buckypaper (BP) as part of this work and characterized using Raman spectroscopy, resistivity, and density measurements. The ampacity (Acm2) of the Cu-5volCNT composite was 3.8 lower than the same gauge pure Cu wire similarly tested. The lower ampacity in the composite wire is believed to be due to the presence of s-CNT in the composite and the relatively low (proper) level of longitudinal cooling employed in the test method. Although Raman spectroscopy can be used to characterize CNT, a strong relation between the ratios of the primary peaks GGand the relative amounts of m-CNT and s-CNT was not observed. The average effective conductivity of the CNT in the sorted, 95 m-CNT BP was 2.5 times higher than the CNT in the similar but un-sorted BP. This is an indication that improvements in the conductivity of CNT composites can be made by the use of sorted, highly conductive m-CNT.

wire↗

NASA NTRS2016

Carbon Nanotube Composite Ampacity and Metallic CNT Buckypaper Conductivity

NASA is currently working on developing motors for hybrid electric propulsion applications in aviation. To make electric power more feasible in airplanes higher power to weight ratios are sought for electric motors. One facet to these efforts is to improve (increase) the conductivity and (lower) density of the magnet wire used in motors. Carbon nanotubes (CNT) and composites containing CNT are being explored as a possible way to increase wire conductivity and lower density. Presented here are measurements of the current carrying capacity (ampacity) of a composite made from CNT and copper. The ability of CNT to improve the conductivity of such composites is hindered by the presence of semiconductive CNT (s-CNT) that exist in CNT supplies naturally, and currently, unavoidably. To solve this problem, and avoid s-CNT, various preferential growth and sorting methods are being explored. A supply of sorted 95 metallic CNT (m-CNT) was acquired in the form of thick film Buckypaper (BP) as part of this work and characterized using Raman spectroscopy, resistivity, and density measurements. The ampacity (Acm2) of the Cu-5volCNT composite was 3.8 lower than the same gauge pure Cu wire similarly tested. The lower ampacity in the composite wire is believed to be due to the presence of s-CNT in the composite and the relatively low (proper) level of longitudinal cooling employed in the test method. Although Raman spectroscopy can be used to characterize CNT, a strong relation between the ratios of the primary peaks GGand the relative amounts of m-CNT and s-CNT was not observed. The average effective conductivity of the CNT in the sorted, 95 m-CNT BP was 2.5 times higher than the CNT in the similar but un-sorted BP. This is an indication that improvements in the conductivity of CNT composites can be made by the use of sorted, highly conductive m-CNT.

yarns↗

NASA NTRS2019

Molten Target Sputtering: Non-Conventional Method for High Mobility Si0.15Ge0.85 Growth at 500°C

Since electrons travel over 100 times faster in Silicon-Germanium (SiGe) than in pure Si due to the low effective masses associated with Ge and SiGe-based devices continue to replace Si-based solid-state electronic devices. SiGe thin film on sapphire was successfully grown at 890°C, using a magnetron sputtering system within heteroepitaxial framework. However, SiGe growth at 890oC is a costly and difficult process to produce as a uniform wafer for semiconductor device manufacturing due to thermal soak times, and geometric thermal shadowing from the wafer holder. To leverage the semiconducting capabilities of SiGe, novel processing techniques for SiGe film growth with decreased thermal loading are required. This paper introduces the Molten Target Sputtering (MTS) method that produces high mobility SiGe on sapphire below 500°C. This non-conventional method has the advantage of high kinetic energy, high-energy latency, and high flux density of sputtered atoms by combining benefits of both magnetron sputtering and thermal evaporation. For the MTS method, a 1~2 mm (depth and width) ring-shaped groove was cut between the center magnet and surrounded by electromagnets creating a circular cavity between the copper plate and source target materials that melt the target material. The SiGe grown from the MTS shows continuous morphology and 99.7% single crystal Si0.15Ge0.85 films. The Hall electron mobilities of the Si0.15Ge0.85 are 456 sq. cmV(exp -1)s(exp -1) and 123.9 sq. cmV(exp -1)s(exp -1) at 5.59 x 10(exp 18) cubic cm and 3.5 x 10(exp 20) cubic cm carrier concentration at 22.38°C, respectively. This is approximately 5.5 times higher than that of Si and similar to the Ge value at equivalent carrier concentrations and temperatures.

High mobility SiGe↗

NASA NTRS1995

Preparation of Thermoelectric Materials from Melts

The most common methods to prepare semiconductors are based on use of melts or vapor phase. A tendency to use thin film structures in modern semiconducting devices brought a variety of technologies based on vapor phase deposition. The preparation of chemical compounds and solid solutions from a melt begins with melting the elemental constituents together. Melt technology and techniques are discussed.

thermoelectric↗

NASA NTRS1998

Some Properties of Re(sub 2)Te(sub 5) based Materials

One of the new approaches for developing thermoelectric materials with superior figures of merit is to look at materials which can be referred to as 'rattling' semiconductors.

coefficient values thermal conductivity electrical↗

NASA NTRS2005

Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon

An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.

Molecular beam epitaxy↗