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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15

Demonstration of Decentralized Physics-Driven Learning

In typical artificial neural networks, neurons adjust according to global calculations of a central processor, but in the brain, neurons and synapses self-adjust based on local information. Contrastive learning algorithms have recently been proposed to train physical systems, such as fluidic, mechanical, or electrical networks, to perform machine-learning tasks from local evolution rules. However, to date, such systems have only been implemented in silico due to the engineering challenge of creating elements that autonomously evolve based on their own response to two sets of global boundary conditions. Here, we introduce and implement a physics-driven contrastive learning scheme for a network of variable resistors, using circuitry to locally compare the response of two identical networks subjected to the two different sets of boundary conditions. Using this method, our system effectively trains itself, optimizing its resistance values without the use of a central processor or external information storage. Once the system is trained for a specified allostery, regression, or classification task, the task is subsequently performed rapidly and automatically by the physical imperative to minimize power dissipation in response to the given voltage inputs. Here, we demonstrate that, unlike typical computers, such learning systems are robust to extreme damage (and thus manufacturing defects) due to their decentralized learning. Our twin-network approach is therefore readily scalable to extremely large or nonlinear networks, where its distributed nature will be an enormous advantage; a laboratory network of only 500 edges will already outpace its in silico counterpart.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Topological Hall-like behavior of multidomain ferromagnets

Here, we investigate the emergence of topological Hall-like signals in disordered multidomain ferromagnets. Nonmonotonic behavior in Hall resistivity, commonly attributed to topological spin textures such as skyrmions, is produced in a random resistor network model without any chirality. It arises from simple mechanisms of the anomalous Hall effect in combination with the domain wall scattering. By varying domain configurations and domain wall resistances, we explore the conditions under which the nonmonotonic resistivity can be enhanced. Our results emphasize the need for careful analysis in distinguishing between true topological Hall effects and artifacts caused by domain disorders.

anomalous Hall effect↗

Continuous Mott Transition in Moiré Semiconductors: Role of Long-Wavelength Inhomogeneities

Recent experiments in moiré transition metal dichalcogenide materials have reported the observation of a continuous bandwidth-tuned transition from a metal to a paramagnetic Mott insulator at a fixed filling of one electron per moiré unit cell. The electrical transport measurements reveal a number of puzzling features that are seemingly at odds with the theoretical expectations of an interaction-induced, but disorder-free, bandwidth-tuned metal-insulator transition. In this Letter, we include the effects of long-wavelength inhomogeneities, building on the results for a continuous metal-insulator transition at fixed filling in the clean limit. We examine the effects of mesoscale inhomogeneities near the critical point on transport using the framework of random resistor networks, highlighting the salient differences from a simple percolation-based picture. Finally, we place our results in the context of recent and ongoing experiments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spatiotemporal dynamics of ionic reorganization near biological membrane interfaces

Electrical signals in excitable cells involve spatially localized ionic fluxes through ion channels and pumps on cellular lipid membranes. Common approaches to understand how these fluxes spread assume that the membrane and the surrounding electrolyte comprise an equivalent circuit of capacitors and resistors, which ignores the localized nature of transmembrane ion transport, the resulting ionic gradients and electric fields, and their spatiotemporal relaxation. Here, we consider a model of localized ion pumping across a lipid membrane, and use theory and simulation to investigate how the electrochemical signal propagates spatiotemporally in and out of plane along the membrane. The localized pumping generates long-ranged electric fields with three distinct scaling regimes along the membrane: a constant potential near-field region, an intermediate monopolar region, and a far-field dipolar region. Upon sustained pumping, the monopolar region expands radially in plane with a steady speed that is enhanced by the dielectric mismatch and the finite thickness of the lipid membrane. For unmyelinated lipid membranes in physiological settings, we find remarkably fast propagation speeds of ∼ 40 m / s , allowing faster ionic reorganization compared to bare diffusion. Together, our paper shows that transmembrane ionic fluxes induce transient long-ranged electric fields in electrolyte solutions, which may play hitherto unappreciated roles in biological signaling. Published by the American Physical Society 2025

Row, Hyeongjoo (ORCID:000000033623512X)↗

An Open Source Perovskite Solar Cell Curve Tracer

When developing systems for perovskite solar cells (PSCs), it is important to have a testing platform that closely resembles your deployed systems. While developing a 1 U CubeSat, the Big Red Sat-1 at the University of Nebraska-Lincoln, we found a lack of passive curve tracing instrumentation, which we needed for our mission. To that end, we developed a benchtop passive curve tracer that leverages the Ossila Solar Simulator as an AM1.5 light source. This device utilizes a ladder of switched resistors and a precision voltage and current measurement to achieve the curve tracing. It also integrates a common-anode multiplexer to switch through multipixel PSCs. Finally, the solar cell holder is separate from the main measurement system, so various substrates sizes and pixel counts can be supported. This system is tested using various PSCs. It has been open sourced to enable reuse in future systems that may benefit from the lower power consumption and flight heritage.

14 SOLAR ENERGY↗

Micromachined Piezoresistive-sensed Diaphragms for Infrasonic Monitoring

Micromachined, piezoresistive-sensed diaphragms are designed and fabricated specifically for infrasound sensing applications. Relatively large diaphragms, up to 6 mm × 6 mm, are fabricated to meet the high sensitivity requirements of infrasonic monitoring. A double-stack SOI wafer process is used, resulting in a streamlined two-mask process without the need for doping or ion-implantation. Pressure-sensitivities of diaphragms are studied using a custom static calibration set-up. Here, the piezoresistance of longitudinal and transverse resistors are studied over a large pressure range of ±5,500 Pa so that the linear and nonlinear response regions of diaphragms are observed. Measurements are compared against a nonlinear finite element simulation—shown to accurately predict the sensor’s behavior over a large response range.

47 OTHER INSTRUMENTATION↗

Blackstart of Power Grids with Inverter-Based Resources

This paper presents the findings of our investigation into inverter-based resource-(IBR-) driven blackstart of electric grids. Four potential black-start configurations with different setups are presented. To evaluate the technical feasibility of IBR-driven black start in the four configurations, a behavioral model of inverters that mimics current-limited inverter operation is developed using variable resistors in the MATLAB Simulink/Simscape environment. The inverter model is connected to an induction motor through transformers and a transmission line to simulate its startup. Simulation results show that even with the limited current supply capability of inverters because of their physical constraints, IBRs can black-start a motor under certain conditions. Results also show that by using soft-start techniques, such as ramped supply voltage, inrush currents can be reduced, thereby expanding the conditions under which IBRs can provide black-start support. Simulation results with different scenarios lead to discussions and key takeaways that could be valuable for further IBR-driven black-start research.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Trap-Assisted Dopant Compensation Prevents Shunting in poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Interdigitated back contact (IBC) solar cells achieve the highest efficiencies of single-junction architectures, but complicated patterning of the rear fingers and spreading of dopants during processing inhibit their mainstream adoption due to concerns of shunting between the IBC fingers. One method of simplifying patterning at the rear is by using contact masks combined with plasma-enhanced chemical vapor deposition (PECVD) or ion implantation. However, the intrinsic isolation region becomes contaminated during high-temperature annealing by lateral diffusion of dopants and during masked PECVD by spreading of dopant radicals through region between the mask and the substrate. Despite this contamination, we show through scanning spreading resistance microscopy and Kelvin probe force microscopy that a ~20 µm wide compensating region exists with high enough resistivity to prevent shunting. We model this p-i-n poly-Si system using two simulation models: a simple resistor model considering only the capture of charge carriers by trap defects in poly-Si to reduce the conductivity, and a more refined 1-dimensional finite element model using Poisson’s equation, drift-diffusion equations, and recombination of carriers. Using this model, we show that high defect density significantly decreases the current across the region between the p- and n-type fingers, preventing shunting.

atom probe↗

Effect of Dopant Compensation on the Conductivity of the Intrinsic poly-Si Isolation Region in Passivated IBC Silicon Solar Cells

The performance of IBC solar cells depends on the ability of this region to electrically isolate the doped fingers so that shunting does not occur and reduce the cell fill factor. We report on simulations which model the region between the p- and n-type poly-Si fingers of interdigitated back contact (IBC) solar cells as a series of resistors extending from one doped finger to the other. We demonstrate that the existence of a well compensated region between the doped fingers is enough to prevent shunting and loss of cell performance, despite contamination of dopants from the opposing dopant fingers. We show through these simulations that a net doping concentration below ~1018 cm-3 will enable a high resistivity and identify the conditions under which this highly resistive region forms despite imperfect finger edges. Additionally, we apply this analysis to tails measured by time-of-flight secondary ion mass spectrometry and confirm this hypothesis for our experimentally measured tails.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Test Results of Fast Decaying Current-Induced AC Losses in SHMS Superconducting Magnets at Jefferson Lab

The 11 GeV Super High Momentum Spectrometer (SHMS) of Hall C, part of the recent 12 GeV accelerator Upgrade at Jefferson Lab, was successfully commissioned in 2017. Fast current discharges of the SHMS Q2, Q3 quadrupoles and dipole superconducting magnets experienced some level of operational difficulty, during commissioning and normal operation. Measurements and analyses demonstrate that the fast current discharge leads to substantial AC losses in the conductor and subsequently triggers a quench-back effect. The details of the measurements and analyses have been reported previously. This paper focuses on the test results of the magnets using a reduced value of the protection dump resistor for each magnet to lower the current decay rate. Finally, the test results confirmed that the reduced dump resistances eliminated the quench-back effect for the SHMS Q2, Q3 and Dipole magnets, thus improving their cryogenic operability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Sudden-Discharge Cycling Characteristics and Millisecond Dynamic Behaviors of a HTS Stainless-Steel Insulated Double-Pancake Coil With Thin Copper Plates

We have tested an intermediate-sized HTS stainless-steel (co-wound) insulated double pancake coil (~132 turns per coil) and discovered dynamic effects during sudden discharge on both millisecond and second scales. For soft break, the power supply is turned off suddenly but the shunt resistor (164 milliohm) is still connected; for hard break, a high voltage contactor is used to suddenly open the circuit so that the leads are completely open. Hard break is dangerous to traditionally insulated LTS magnets, but the SS-insulated HTS DPC retained integrity over ¡80 charge-discharge cycles. Voltage decay curves for soft and hard breaks are studied on short and long timescales. On long timescales, we observe the expected exponential decay and measure the time constant to calculate contact resistance. On short timescales, we observe highly dynamic effects: a hyper-exponential decay suggesting that the inductance or contact resistance is suddenly changing with time, likely an indication of the RL circuit forming. Moreover, peak voltage immediately (ms) after the sudden discharge were collected and compared. It is found that the peak voltage in soft-discharge is proportional to the applied current, while the those in hard-break has a unique pattern and tends to stay flat even though the applied current increases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗

Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer

Grounding related issues are critical for safe and reliable operation of solid-state transformer (SST) in medium-voltage (MV) applications, e.g., solar photovoltaic and energy storage integration, date center, electric vehicle fast charging, etc. This article presents for the first time the issue of additional device voltage stress due to grounding-loop current in current-source SST, using the soft-switching solid-state transformer (S4T) as an example. The S4T features single-stage isolated AC-AC, AC-DC, or DC-DC conversion with full-range ZVS, derived from flyback converter or current-source converter (CSC). However, the flyback operation for CSC-based SST means that magnetizing current flows through the reverse-blocking devices on only one side of the medium-frequency transformer (MFT) at a time. Then, the voltages across the devices, especially those on the other side of the MFT, can be influenced by parasitic current. A parasitic model of a modular S4T (M-S4T) prototype is developed from direct measurements and datasheets. Using the developed parasitic model and equivalent circuits, the causes of the voltage stress are analyzed. A voltage-stress mitigation scheme of connecting additional grounding capacitors is proposed. Damping resistors are also installed to damp out the grounding-loop resonance. A robust parameter design of the proposed scheme is given. The existence of the voltage stress issue and the effectiveness of the proposed scheme are verified experimentally on an MV SiC M-S4T prototype with inherent parameter variations among the five modules in the prototype. Here, both single-module and stacked-module operation are demonstrated during steady state and dynamic conditions up to 4 kV peak.

42 ENGINEERING↗

The Computational Capacity of Mem-LRC Reservoirs

Reservoir computing has a emerged as a powerful tool in data-driven time series analysis. The possibility of utilizing hardware reservoirs as specialized co-processors has generated interest in the properties of electronic reservoirs, especially those based on memristors as the nonlinearity of these devices should translate to an improved nonlinear computational capacity of the reservoir. However, designing these reservoirs requires a detailed understanding of how memristive networks process information which has thus far been lacking. In this work, we derive an equation for general memristor-inductor-resistor-capacitor (MEM-LRC) reservoirs that includes all network and dynamical constraints explicitly. Utilizing this we undertake a study of the computational capacity of these reservoirs. We demonstrate that hardware reservoirs may be constructed with extensive memory capacity and that the presence of memristors enacts a tradeoff between memory capacity and nonlinear computational capacity. Here, using these principles, we design reservoirs to tackle problems in signal processing, paving the way for applying hardware reservoirs to high-dimensional spatiotemporal systems.

Circuits with memory↗

A Unidirectional Two-Compartment Neuron Circuit with On-chip STDP learning

Most neuromorphic chips implement the single-compartment point neuron model where synapse circuits connect directly to a leaky integrate and fire (LIF) soma circuit. However, when using a biologically plausible soma circuit (e.g., Hodgkin-Huxley neuron model), an interface circuitry, such as a current conveyor circuit, is needed to transmit synaptic current to the soma circuit. This is especially true for ultra-low power neuron circuits, where membrane capacitance is on the order of 20 fF. This need for an interface circuit arises because the parasitic capacitance and leakage current caused by fabrication mismatch and second-order effects of the output transistors in the synapse circuits can disturb the spiking dynamics of the soma circuit if connected without an interface. Using an interface circuit to isolate the soma’s membrane capacitor from synapses resolves this issue. We propose to use a unidirectional resistor (a transconductance circuit) to connect the synapse and soma circuits instead of conventional current conveyor circuits. Using a biologically plausible spike pattern detection model, we show that the on-chip spike-timing-dependent plasticity (STDP) learning performance of the proposed unidirectional two-compartment neuron circuit is similar to a single-compartment circuit (with a current conveyor as an interface) and additionally, it is more power-efficient and biologically plausible. The chip is fabricated in the Taiwan Semiconductor Manufacturing Company (TSMC) 250 nm technology node and comprises a single neuron circuit.

Gautam, Ashish [ORNL]↗

thevenin: An Equivalent Circuit Modeling Package [SWR-24-132]

This package is a wrapper for the well-known Thevenin equivalent circuit model for simulating battery behavior with a focus on ease of use. The model is comprised of a single series resistor followed by any number of parallel RC pairs. The package includes an intuitive "experiment" interface, which simplifies the programming of constant or dynamic current, voltage, and/or power-driven loads, making it ideal for a wide range of applications, from basic tests to complex simulations. It also supports state-of-charge (SOC) and temperature-dependent properties, allowing the model to be more easily calibrated against real cells.

Randall, Corey↗

Grid-tied Multilevel Inverter with Phase-locked Loop Algorithm

A multilevel inverter is an electronic device capable of changing direct current energy to alternant current energy with a voltage and frequency established by the user. They are ideal for connecting renewable energy sources to the AC grid, energy plants, and smart grids. The voltage must be balanced and synchronized with the electrical network for adequate performance. This paper shows the voltage synchronization between an inverter output voltage and the AC grid using a phase-locked loop based on an adaptive observer. The proposed algorithm can perform under grid uncertainties such as noise and generates a reference signal for the modulation used in the inverter. The algorithm is robust and computationally efficient and can be implemented through basic elements such as operational amplifiers, resistors, and capacitors, reducing its difficulty in executing it in a system.

42 ENGINEERING↗