Mechanical and structural properties of radiation-damaged allanite-(Ce) and the effects of thermal annealing
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nuclear (including radiation effects), materials a↗
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Results for “radiation damage”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Radiation damage in silicon NIP solar cells
The performance parameters of n(+) p p(+) silicon solar cells of varying thicknesses with boron doped p base resistivities of 1250 and 84 ohm centimeters were determined. High injection theory was used to analyze the experimental data. Results from an analysis of open circuit voltages show a much greater contribution to V(oc) from the back junction than is the case for the lower resistivity in common use. The base minority carrier distribution is seen to be significant in determining the contribution of V(B), the base contribution to V(oc). Although V(B) is small, its value increases with increasing radiation fluence. In this connection it is noted that, with illumination from the p(+) side, the sign of V(B) becomes positive, and V(B) itself becomes an additive term to V(oc). Diffusion lengths determined under high injection conditions are significantly greater than those obtained under low injection, while damage coefficients under low injection are higher than those obtained under high injection conditions.
Weinberg, I.↗
Characterization of radiation damage in 3D printed SiC
The SiC fuel matrix for advanced gas-cooled high temperature reactors as part of the Transformational Challenge Reactor program serves as the fuel particle container structure, a barrier to fission gas release, and a heat transfer medium. Its performance is particularly important because the fuel matrix must demonstrate good structural stability and thermal behaviors. An additive manufacturing methodology combining a binder jet 3D printing process with chemical vapor infiltration (CVI) for the production of SiC was recently developed. In this study, post irradiation examination by transmission electron microscopy shows that defect accumulation within the printed particles is very similar to other forms of high-purity SiC. However, damage accumulation was not directly observed in the CVI matrix because black spot damage and dislocation loops are difficult to image within the nanoscale highly faulted CVI matrix and because interstitial defects may rapidly annihilate at the stacking faults. Therefore, electron energy loss spectroscopy (EELS) analysis was used to analyze defect swelling in both the printed particles and the CVI matrix. The EELS analysis helped reveal that the radiation-induced swelling in the CVI matrix is similar to that of the printed SiC particles. This work shows that 3D printed SiC has behavior that is comparable to SiC processed by other means and that 3D printing could serve as a suitable processing technique for high-purity SiC for nuclear applications.
36 MATERIALS SCIENCE↗
Effects of defect recombination centers on radiation damage in solar cells
Defect production in silicon is modeled on a computer by solving a large system of rate equations. The model includes the main, known defects that are stable at operating temperatures of solar cells in outer space; most of these defects are secondary and tertiary defects. The preliminary result shows that the presence of defect recombination centers for primary defects (i.e., vacancy and interstitial) can effectively reduce the production rates of those stable defects and, consequentially, improve the lifetime of solar cells operating in radiation environment. The characteristics of the defect recombination center required for better solar cell performance along with prospective candidates are discussed.
Cheng, L. J.↗
Annealing of radiation damage in low resistivity silicon solar cells
The reduction of the temperatures required to restore cell performance after irradiation was investigated with emphasis on the annealing characteristics of two groups of cells containing different amounts of oxygen and carbon. Examination of defect behavior in irradiated boron doped silicon leads to the tentative conclusion that further reduction in annealing temperature could be achieved by decreasing the carbon concentration and either neutralizing the divacancy and/or minimizing its formation as a result of irradiation. A significant reduction in the temperature required to remove radiation induced degradation in 0.1 ohm centimeter silicon solar cells was achieved.
Weinberg, I.↗
Proton-radiation damage in Gunn oscillators
The irradiation effects of 22 MeV protons on the electrical characteristics of GaAs continuous-wave Gunn oscillators was studied. The radio frequency power output was reduced by 3 decibels at proton fluences in the neighborhood of 1.5 x 10 to the 12th power protons/sq cm. Conductance measurements indicate that the carrier removal rate at high electric fields remained roughly 40 percent less than at low fields. Diode efficiencies of two device groups were found to be monotonically descreasing functions of fluence. Frequency modulation noise was generally unaffected by radiation, but the magnitude of the noise in the noise power spectrum increased significantly. These effects are partially accounted for, in a qualitative fashion, by a model of electron traps having field-dependent net-carrier capture rates and various response times.
Johnson, J. W.↗
Gallium Arsenide solar cell radiation damage experiment
Gallium arsenide (GaAs) solar cells for space applications from three different manufactures were irradiated with 10 MeV protons or 1 MeV electrons. The electrical performance of the cells was measured at several fluence levels and compared. Silicon cells were included for reference and comparison. All the GaAs cell types performed similarly throughout the testing and showed a 36 to 56 percent power areal density advantage over the silicon cells. Thinner (8-mil versus 12-mil) GaAs cells provide a significant weight reduction. The use of germanium (Ge) substrates to improve mechanical integrity can be implemented with little impact on end of life performance in a radiation environment.
Maurer, R. H.↗
I-V-T analysis of radiation damage in high efficiency Si solar cells
A detailed analysis of current-voltage characteristics of N(+)-P/P solar cells indicate that there is a combination of different mechanisms which results in an enhancement in the dark current and in turn deteriorates the photovoltaic performance of the solar cells after 1 MeV e(-) irradiation. The increase in the dark current is due to three effects, i.e., bulk recombination, space charge recombination by deep traps and space charge recombination through shallow traps. It is shown that the increase in bulk recombination current is about 2 to 3 orders of magnitude whereas space charge recombination current due to shallow traps increases only by an order or so and no space charge recombination through deep traps was observed after irradiation. Thus, in order to improve the radiation hardness of these devices, bulk properties should be preserved.
Banerjee, S.↗
Enhanced backscatter and unsaturated blue wavelength shifts in F-doped fused silica optical fibers exposed to extreme neutron radiation damage
Amorphous fused silica (a-SiO 2 ) optical fibers, with and without inscribed Bragg gratings, were interrogated using infrared (~1550 nm) optical backscatter reflectometry during ~25 days of intense neutron irradiation to a fast (energy > 0.1 MeV) neutron fluence of ~10 21 n/cm 2 , or ~1.5 atomic displacements per atom. The reflected light amplitudes in Ge-doped core telecommunications fiber dropped below detection limits (>15 dB attenuation) within 3 days of irradiation (~10 20 fast n/cm 2 ). Here, amplitudes from a pure silica core, F-doped silica cladding fiber reached equilibrium levels ~1.5–2 dB higher than pre-irradiation values, whereas Bragg gratings inscribed in the same fiber using a femtosecond laser (point-by-point method) suffered > 45 dB attenuation. Blue wavelength shifts were initially consistent with previous radiation-induced compaction models but increased linearly with increasing neutron fluence (no evidence of saturation) beyond 10 20 n/cm 2 and exceeded 0.6%, which corresponds to >1,000 °C drift if used to measure temperature changes.
36 MATERIALS SCIENCE↗
Linear response theory for annealing of radiation damage in semiconductor devices
A theoretical study of the radiation/annealing response of MOS ICs is described. Although many experiments have been performed in this field, no comprehensive theory dealing with radiation/annealing response has been proposed. Many attempts have been made to apply linear response theory, but no theoretical foundation has been presented. The linear response theory outlined here is capable of describing a broad area of radiation/annealing response phenomena in MOS ICs, in particular, both simultaneous irradiation and annealing, as well as short- and long-term annealing, including the case when annealing is nearing completion. For the first time, a simple procedure is devised to determine the response function from experimental radiation/annealing data. In addition, this procedure enables us to study the effect of variable temperature and dose rate, effects which are of interest in spaceflight. In the past, the shift in threshold potential due to radiation/annealing has usually been assumed to depend on one variable: the time lapse between an impulse dose and the time of observation. While such a suggestion of uniformity in time is certainly true for a broad range of radiation annealing phenomena, it may not hold for some ranges of the variables of interest (temperature, dose rate, etc.). A response function is projected which is dependent on two variables: the time of observation and the time of the impulse dose. This dependence on two variables allows us to extend the theory to the treatment of a variable dose rate. Finally, the linear theory is generalized to the case in which the response is nonlinear with impulse dose, but is proportional to some impulse function of dose. A method to determine both the impulse and response functions is presented.
Litovchenko, Vitaly↗
Multiscale Modeling of Radiation Damage in UO 2 under Accelerated Burnup Conditions
Accelerated fuel qualification (AFQ) is a methodology by which new nuclear fuels are developed in an accelerated time frame compared with historical fuel qualification approaches. AFQ generally relies on high-fidelity physics-based modeling and simulation tools to adequately describe fuel performance as well as on revolutionary methods to accelerate burnup accumulation and collect relevant data more quickly. This report summarizes the use of advanced fuel modeling and simulation tools to evaluate microstructures from commercially irradiated fuel and microstructures from proposed MiniFuel irradiations, in which burnup accumulation is accelerated while prototypic temperature conditions are maintained. In this milestone, we used the mesoscale fuel performance code MARMOT to model the evolution of irradiated UO 2 microstructures and their potential restructuring at high burnup. The simulation conditions were informed by BISON models of both commercially irradiated fuel and MiniFuel.
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
Segregation of Ni at early stages of radiation damage in NiCoFeCr solid solution alloys
Not Available
36 MATERIALS SCIENCE↗
Systematic analysis on the primary radiation damage in Th 1 − x U x O 2 fluorite systems
Not Available
Jin, Miaomiao↗
Effects of radiation damage and precipitate distribution on micro-pillar compression testing of irradiated CuCrZr
The results of small-scale mechanical tests are convoluted by the so-called size effect, whereby materials appear stronger when the scale of the test is reduced to the order of microns or less. The dimensional range over which this occurs has been shown to be linked to a change in sample microstructure, such as the addition of defects induced by irradiation. To investigate this response, a CuCrZr alloy was subjected to proton irradiation and mechanically tested using micro compression of pillars with a range in size. It was found that irradiation defects dominate over the extrinsic size effect and the sensitivity to differences in precipitate microstructure was also somewhat reduced, suggesting that size-independent results could be obtained from much smaller test volumes in irradiated material compared to their non-irradiated counterparts. Lastly, comparison was made between the increase in yield strength predicted by models and the experimentally measured values to establish the key parameters driving the strengthening behaviour.
36 MATERIALS SCIENCE↗
Synergies between H, He and radiation damage in dual and triple ion irradiation of candidate fusion blanket materials
Three ferritic/martensitic alloys were studied to understand the synergistic effect between single ion beam (Fe 2+ ), dual ion beam (Fe 2+ +He 2+ and Fe 2+ +H + ), and triple ion beam (Fe 2+ +He 2+ +H + ) irradiations on cavity evolution. A commercial alloy, F82H, a castable nanostructured alloy, CNA3, and a high purity model alloy, Fe8Cr2W, were irradiated at 400°C to 600°C to a damage level of 50 dpa at a damage rate of 1 × 10 –3 dpa/s with He and H injection rates of 10 and 40 appm/dpa, respectively. Post-irradiation characterization via bright field transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy was performed on all irradiated conditions to characterize the cavity size distribution and determine the effects of H/He injection on cavity microstructure. In all three alloys, hydrogen co-injection with helium resulted in an increased cavity number density and maximum cavity size, producing an increase in swelling over that from helium injection alone. Swelling in F82H appears to peak between 450°C and 500°C. At 600°C, swelling was minimal and cavities of high density and small size were confined to grain boundaries and dislocations while at 400°C, swelling is also low with a nearly homogeneous, high density, distribution of very small cavities throughout. Swelling was least in the commercial alloy F82H due to the high sink strength. The CNA3 alloy underwent dissolution of precipitates that lowered the sink strength and resulted in higher swelling than F82H, but less than the model alloy. Electron energy loss spectroscopy (EELS) elemental mapping revealed hydrogen forming a halo-like structure about the periphery of the cavities and helium residing within the cavities themselves. Finally, this observation suggests that hydrogen reduces the surface energy of helium-filled cavities which results in both increased cavity number density and cavity size in triple beam irradiation over dual beam irradiation.
36 MATERIALS SCIENCE↗