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At least 271 records · Page 15

Deformation, recrystallization, strength, and fracture of press-forged ceramic crystals.

Sapphire and ruby were very difficult to press-forge because they deformed without cracking only in a limited temperature range before they melted. Spinel crystals were somewhat easier and MgO, CaO, and TiC crystals much easier to forge. The degree of recrystallization that occurred during forging (which was related to the ease and type of slip intersections) varied from essentially zero in Al2O3 to complete (i.e., random polycrystalline bodies were produced) in CaO. Forging of bi- and polycrystalline bodies produced incoherent bodies as a result of grain-boundary sliding. Strengths of the forged crystals were comparable to those of dense polycrystalline bodies of similar grain size. However, forged and recrystallized CaO crystals were ductile at lower temperatures than dense hot-pressed CaO. This behavior is attributed to reduced grain-boundary impurities and porosity. Fracture origins could be located, indicating that fracture in the CaO occurs internally as a result of surface work hardening caused by machining.-

Rice, R. W.↗

Low-Cost thin-layer silicon solar cells

Two methods have been found to lower cost of polycrystalline silicon solar cells. Successive layers of polycrystalline silicon are deposited over supporting substrates of relatively inexpensive metallurgical-grade polycrystalline silicon, graphite, or steel.

Chu, T. L.↗

Radiation effects on beta 10.6 of pure and europium doped KCl

Changes in the optical absorption coefficient as a result of X-ray and electron bombardment of pure KCl (monocrystalline and polycrystalline), and divalent europium doped polycrystalline KCl were determined. The optical absorption coefficients were measured by a constant heat flow calorimetric method. Both 300 KV X-irradiation and 2 MeV electron irradiation produced significant increases in beta 10.6, measured at room temperature. The X-irradiation of pure moncrystalline KCl increased beta 10.6 by 0.005/cm for a 113 MR dose. For an equivalent dose, 2 MeV electrons were found less efficient in changing beta 10.6. However, electron irradiation of pure and Eu-doped polycrystalline KCl produced marked increases in adsorption. Beta increased to over 0.25/cm in Eu-doped material for a 30 x 10 to the 14th power electrons/sq cm dose, a factor of 20 increase over unirradiated material. Moreover, bleaching the electron irradiated doped KCl with 649 m light produced and additional factor of 1.5 increase. These findings will be discussed in light of known defect-center properties in KCl.

Grimes, H. H.↗

Radiation effects on beta /10.6/ of pure and europium doped KCl

Changes in the optical absorption coefficient as the result of X-ray and electron bombardment of pure monocrystalline and polycrystalline KCl and of divalent europium doped polycrystalline KCl were determined. A constant heat flow calorimetric method was used to measure the optical absorption coefficients. Both 300 kV X-ray irradiation and 2 MeV electron irradiation produced increases in the optical absorption coefficient at room temperature. X-ray irradiation produced more significant changes in pure monocrystalline KCl than equivalent amounts of electron irradiation. Electron irradiation of pure and Eu-doped polycrystalline KCl produced increases in the absorption by as much as a factor of 20 over untreated material. Bleaching of the electron-irradiated doped KCl with 649 millimicron light produced a further increase.

Grimes, H. H.↗

Industrialization study, phase 2

The potentials and requirements of advanced photovoltaic technologies still in their early developmental stages were evaluated and compared to the present day single crystal silicon wafer technology and to each other. The major areas of consideration include polycrystalline and amorphous silicon, single crystal and polycrystalline gallium arsenide, and single crystal and polycrystalline cadmium sulfide. A rank ordering of the advanced technologies is provided. The various ranking schemes were based upon present-day efficiency levels, their stability and long-term reliability prospects, material availability, capital investments both at the laboratory and production level, and associated variable costs. An estimate of the timing of the possible readiness of these advanced technologies for technology development programs and industrialization is presented along with a set of recommended government actions concerning the various advanced technologies.

Source record↗

Silicon Solar Cell Process Development, Fabrication and Analysis

Ribbon to Ribbon (RTR) solar cells processed from polycrystalline feedstock showed maximum AMO efficiency of 5.6%. Solar cells from single crystalline feedstock showed slightly higher efficiency than those from polycrystalline feedstock, indicating maximum efficiency of about 6.6% with SiO AR coating. Single crystalline control cells gave 11-12% AMO efficiencies demonstrating that the poor performance of the RTR solar was due to the low quality of material itself. Dendritic web solar cells from the standard process showed maximum AMO efficiency of 9.8% while efficiency of control solar cells were around 11-12%. Web solar cells from back surface field (BSF) process indicated maximum AMO efficiency of 10.9%. Some improvement in open circuit voltage was noticed from the BSF process. Small light spot scanning experiments were carried out on the solar cells from Wacker Silso, EFG, RTR, and dendritic web ribbons. Photoresponse results provided information on localized cell performance and grain size in polycrystalline material, and agreed quite well with the cell performance data, such as efficiency, minority carrier diffusion length, and spectral response.

Yoo, H. I.↗

Method of Fabricating Schottky Barrier solar cell

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Stirn, R. J.↗

A low-cost polysilicon process based on the synthesis and decomposition of dichlorosilane

Major process steps of a dichlorosilane based chemical vapor deposition (CVD) process for the production of polycrystalline silicon have been evaluated. While an economic analysis of the process indicates that it is not capable of meeting JPL/DOE price objectives ($14.00/kg in 1980 dollars), product price in the $19.00/kg to $25.00/kg range may be achieved. Product quality has been evaluated and ascertained to be comparable to semiconductor-grade polycrystalline silicon. Solar cells fabricated from the material are also equivalent to those fabricated from semiconductor-grade polycrystalline silicon.

Mccormick, J. R.↗

Test Structures For Bumpy Integrated Circuits

Cross-bridge resistors added to comb and serpentine patterns. Improved combination of test structures built into integrated circuit used to evaluate design rules, fabrication processes, and quality of interconnections. Consist of meshing serpentines and combs, and cross bridge. Structures used to make electrical measurements revealing defects in design or fabrication. Combination of test structures includes three comb arrays, two serpentine arrays, and cross bridge. Made of aluminum or polycrystalline silicon, depending on material in integrated-circuit layers evaluated. Aluminum combs and serpentine arrays deposited over steps made by polycrystalline silicon and diffusion layers, while polycrystalline silicon versions of these structures used to cross over steps made by thick oxide layer.

Buehler, Martin G.↗

Thin-Film Photovoltaics: Status and Applications to Space Power

The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

Landis, Geoffrey A.↗

Applications of thin-film photovoltaics for space

The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

Landis, Geoffrey A.↗

Deposition Of Cubic BN On Diamond Interlayers

Thin films of polycrystalline, pure, cubic boron nitride (c-BN) formed on various substrates, according to proposal, by chemical vapor deposition onto interlayers of polycrystalline diamond. Substrate materials include metals, semiconductors, and insulators. Typical substrates include metal-cutting tools: polycrystalline c-BN coats advantageous for cutting ferrous materials and for use in highly oxidizing environments-applications in which diamond coats tend to dissolve in iron or be oxidized, respectively.

Ong, Tiong P.↗

High Performance Arcjet Engines

This effort sought to exploit advanced single crystal tungsten-tantalum alloy material for fabrication of a high strength, high temperature arcjet anode. The use of this material is expected to result in improved strength, temperature resistance, and lifetime compared to state of the art polycrystalline alloys. In addition, the use of high electrical and thermal conductivity carbon-carbon composites was considered, and is believed to be a feasible approach. Highly conductive carbon-carbon composite anode capability represents enabling technology for rotating-arc designs derived from the Russian Scientific Research Institute of Thermal Processes (NIITP) because of high heat fluxes at the anode surface. However, for US designs the anode heat flux is much smaller, and thus the benefits are not as great as in the case of NIITP-derived designs. Still, it does appear that the tensile properties of carbon-carbon can be even better than those of single crystal tungsten alloys, especially when nearly-single-crystal fibers such as vapor grown carbon fiber (VGCF) are used. Composites fabricated from such materials must be coated with a refractory carbide coating in order to ensure compatibility with high temperature hydrogen. Fabrication of tungsten alloy single crystals in the sizes required for fabrication of an arcjet anode has been shown to be feasible. Test data indicate that the material can be expected to be at least the equal of W-Re-HfC polycrystalline alloy in terms of its tensile properties, and possibly superior. We are also informed by our colleagues at Scientific Production Association Luch (NP0 Luch) that it is possible to use Russian technology to fabricate polycrystalline W-Re-HfC or other high strength alloys if desired. This is important because existing engines must rely on previously accumulated stocks of these materials, and a fabrication capability for future requirements is not assured.

Kennel, Elliot B.↗

Investigation of Strain Aging in the Ordered Intermetallic Compound beta-NiAl

The phenomenon of strain aging has been investigated in polycrystalline and single crystal NiAl alloys at temperatures between 300 and 1200 K. Static strain aging studies revealed that after annealing at 1100 K for 7200 s (i.e., 2h) followed by furnace cooling, high purity, nitrogen-doped and titanium-doped polycrystalline alloys exhibited continuous yielding, while conventional-purity and carbon-doped alloys exhibited distinct yield points and Luders strains. Prestraining by hydrostatic pressurization removed the yield points, but they could be reintroduced by further annealing treatments. Yield points could be reintroduced more rapidly if the specimens were prestrained uniaxially rather than hydrostatically, owing to the arrangement of dislocations into cell structures during uniaxial deformation. The time dependence of the strain aging events followed at t(exp 2/3) relationship suggesting that the yield points observed in polycrystalline NiAl were the result of the pinning of mobile dislocations by interstitials, specifically carbon. Between 700 and 800 K, yield stress plateaus, yield stress transients upon a ten-fold increase in strain rate, work hardening peaks, and dips in the strain rate sensitivity (SRS) have been observed in conventional-purity and carbon-doped polycrystals. In single crystals, similar behavior was observed; in conventional-purity single crystals, however, the strain rate sensitivity became negative resulting in serrated yielding, whereas, the strain rate sensitivity stayed positive in high purity and in molybdenum-doped NiAl. These observations are indicative of dynamic strain aging (DSA) and are discussed in terms of conventional strain aging theories. The impact of these phenomena on the composition-structure-property relations are discerned. Finally, a good correlation has been demonstrated between the properties of NiAl alloys and a recently developed model for strain aging in metals and alloys developed by Reed-Hill et al.

Weaver, Mark Lovell↗

Lepidocrocite to Maghemite to Hematite: A way to have Magnetic and Hematitic Martian Soil

We examined decomposition products of lepidocrocite, which were produced by heating the phase in air at temperatures up to 525 C for 3 and 300 hr, by XRD, TEM, magnetic methods, and reflectance spectroscopy (visible and near-IR). Single-crystal lepidocrocite particles dehydroxilated to polycrystalline particles of disordered maghemite which subsequently transformed to polycrystalline particles of hematite. Essentially pure maghemite was obtained at 265 and 223 C for the 3 and 300 hr heating experiments, respectively. Its saturation magnetization (J(sub s)) and mass specific susceptibility are approximately 50 A(sq m)/kg and approximately 40 cubic micrometers/kg, respectively. Because hematite is spectrally dominant, spectrally-hematitic samples (i.e., characterized bv a minimum near 860 nm and a maximum near 750 nm) could also be strongly magnetic (J(sub s) up to approximately 30 A(sq m)/kg) from the masked maghemite component. TEM analyses showed that individual particles are polycrystalline with respect to both maghemite and hematite. The spectrally-hematitic and magnetic Mh+Hm particles can satisfy the spectral and magnetic constraints for Martian surface materials over a wide range of values of Mh/(Mh+Hm) and as either pure oxide powders or (within limits) as components of multiphase particles. These experiments are consistent with lepidocrocite as the precursor of Mh+Hm assemblages on Mars, but other phases (e.g., magnetite) that decompose to Mh and Hm are also possible precursors. Simulations done with a copy of the Mars Pathfinder Magnet Array showed that spectrally hematitic Mh+Hm powders having J(sub s) equal to 20.6 A(sq m)/kg adhered to all five magnets.

Morris, Richard V.↗

The Effects of Proton Radiation on the Structure of Diamond Films

Diamond possesses many of the sought after material properties desired in present day applications and is also quite radiation resistant. These characteristics make it an ideal candidate for insertion into MicroElectroMechanical Systems (MEMS) technologies, particularly for space-based applications. Most prior radiation studies investigated single crystal, bulk diamond specimens, not polycrystalline thin films. This investigation examined the microstructural effects of irradiating polycrystalline diamond films with various proton dosages (10(exp 15) - 10(exp 17) H+/sq cm). Scanning Electron Microscopy, micro-Raman Spectroscopy, and micro-X-ray Diffraction techniques were used to examine the effects as a function of depth. Strain values were calculated. Results indicate that the diamond lattice is retained, even at maximum irradiation levels. Polycrystalline silicon was also examined for comparative purposes.

Newton, Robert Lee↗

Galfenol Tactile Sensor Array and Visual Mapping System

The smart material, Galfenol, is being explored for its uses as a magnetostrictive material. This project seeks to determine if Galfenol can be used as a tactile sensor in a 2-D grid array, magnetic circuit system. When used within a magnetic circuit, Galfenol indicates induced stress and force as a change in flux, due to a change in permeability of the material. The change in flux is detected by Giant MagnetoResistive (GMR) Sensors, which produce a voltage change proportional to the field change. By using Galfenol in an array, this research attempts to create a sensory area. Galfenol is an alloy made of Iron and Gallium. FexGax, where 15 less than or equal to x less than or equal to 28, creates a material with useful mechanical and transduction attributes (Clark et al and Kell). Galfenol is also distinguished by the crystalline structure of the material. Two types currently exist: single crystal and polycrystalline. Single crystal has higher transduction coefficients than polycrystalline, but is more costly. Polycrystalline Galfenol is currently available as either production or research grade. The designations are related to the sample growth rate with the slower rate being the research grade. The slower growth rate more closely resembles the single crystal Galfenol properties. Galfenol 17.5- 18% research grade is used for this experiment, provided by Etrema Products Inc. The magnetic circuit and sensor array is first built at the macro scale so that the design can be verified. After the macro scale is proven, further development will move the system to the nano-level. Recent advances in nanofabrication have enabled Galfenol to be grown as nanowires. Using the nanowires, research will seek to create high resolution tactile sensors with spatial resolutions similar to human finger tips, but with greater force ranges and sensitivity capabilities (Flatau & Stadler). Possible uses of such systems include robotics and prosthetics.

Hale, Kathleen↗

Progress Towards III-V Photovoltaics on Flexible Substrates

Presented here is the recent progress of the NASA Glenn Research Center OMVPE group's efforts in the development of high efficiency thin-film polycrystalline III-V photovoltaics on optimum substrates. By using bulk polycrystalline germanium (Ge) films, devices of high efficiency and low mass will be developed and incorporated onto low-cost flexible substrates. Our progress towards the integration of high efficiency polycrystalline III-V devices and recrystallized Ge films on thin metal foils is discussed.

McNatt, Jeremiah S.↗