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At least 271 records · Page 15

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NASA NTRS1984

Process Research of Polycrystalline Silicon Material (PROPSM)

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Culik, J. S.↗

NASA NTRS1983

Experimental deformation of polycrystalline H2O ice at high pressure and low temperature - Preliminary results

A preliminary study is carried out of involving 70 constant strain deformation tests on pure polycrystalline H2O ice under conditions covering most of the stability field of ice I sub h. Brittle failure of I sub h is found to be promoted by lower P, lower T, and higher strain rates. Ductile flow is found to be promoted by higher P, higher T, and lower strain rates. The brittle failure of ice I sub h is found to be most unusual. The fracture strength is a positive function of P only below 50 MPa. At pressures greater than this, the fracture strength is independent of P, and the fracture plane lies approximately 45 deg from the load axis. It is believed that existing extrapolation based on existing experimental data to Ganymede and Callisto may be badly in error.

Durham, W. B.↗

NASA NTRS1984

Analysis of the electron-beam-induced current of a polycrystalline p-n junction when the diffusion lengths of the material on either side of a grain boundary differ

The short circuit current generated by the electron beam of a scanning electron microscope in p-n junctions is reduced by enhanced recombination at grain boundaries in polycrystalline material. Frequently, grain boundaries separate the semiconductor into regions possessing different minority carrier life times. This markedly affects the short circuit current I(sc) as a function of scanning distance from the grain boundary. It will be shown theoretically that (1) the minimum of the I(sc) in crossing the grain boundary with the scanning electron beam is shifted away from the grain boundary toward the region with smaller life time (shorter diffusion length), (2) the magnitude of the minimum differs markedly from those calculated under the assumption of equal diffusion lengths on either side of the grain boundary, and (3) the minimum disappears altogether for small surface recombination velocities (s less than 10,000 cm/s). These effects become negligible, however, for large recombination velocities s at grain boundaries. For p-type silicon this happens for s not less than 100,000 cm/s.

Von Roos, O.↗

NASA NTRS1984

Finite elastic-plastic deformation of polycrystalline metals

Applying Hill's self-consistent method to finite elastic-plastic deformations, the overall moduli of polycrystalline solids are estimated. The model predicts a Bauschinger effect, hardening, and formation of vertex or corner on the yield surface for both microscopically non-hardening and hardening crystals. The changes in the instantaneous moduli with deformation are examined, and their asymptotic behavior, especially in relation to possible localization of deformations, is discussed. An interesting conclusion is that small second-order quantities, such as shape changes of grains and residual stresses (measured relative to the crystal elastic moduli), have a first-order effect on the overall response, as they lead to a loss of the overall stability by localized deformation. The predicted incipience of localization for a uniaxial deformation in two dimensions depends on the initial yield strain, but the orientation of localization is slightly less than 45 deg with respect to the tensile direction, although the numerical instability makes it very difficult to estimate this direction accurately.

Iwakuma, T.↗

NASA NTRS1985

Efficient Process for Making Polycrystalline Silicon

Solar cells made with lower capital and operating costs. Process based on chemical-vapor deposition (CVD) of dichlorosilane produces high-grade polycrystalline silicon for solar cells. Process has potential as cost-effective replacement for CVD of trichlorosilane.

Mccormick, J. R.↗

NASA NTRS1984

Polycrystalline silicon material availability and market pricing outlook for 1980 through 1988

The results of the second JPL update to an original report to assess the availability and prices of polycrystalline Si for solar cells in the 1983-88 interval are reported. It is noted that the demand for poly-Si for solar cells competes with the demand for the same material for semiconductors, although the solar cell industry can use material rejected from the semiconductor industry. A sufficient supply is projected for the 6 yr period, rising from 3224 metric tons to 10,220 metric tons in 1988, with prices dropping from the 1980 level of $140/kg to $25/kg. The price reduction and improved production are noted to be due in large part to DOE efforts at defining lower-cost production processes.

Costogue, E. N.↗

NASA NTRS1984

Effect of localized polycrystalline silicon properties on solar cell performance

Several forms of polycrystalline silicon, mostly from cast ingots, (including UCP, SILSO and HEM) were studied. On typical slices, localized properties were studied in two ways. Small area (about 2.5 sq mm) mesa diodes were formed, and localized photovoltaic properties were measured. Also a small area (about .015 sq mm) light spot was scanned across the cells; the light spot response was calibrated to measure local diffusion length directly. Using these methods, the effects of grain boundaries, or of intragrain imperfections were correlated with cell performance. Except for the fine grain portion of SILSO, grain boundaries played only a secondary role in determining cell performance. The major factor was intra-grain material quality and it varied with position in ingots and probably related to solidification procedure.

Leung, D.↗

NASA NTRS1986

Concepts for interrelating ultrasnic attenuation, microstrucutre and fracture toughness in polycrystalline solids

Conceptual models are advanced for explaining and predicting empirical correlations found between ultrasonic measurements and fracture toughness of polycrystalline solids. The models lead to insights concerning microstructural factors governing fracture processes and associated stress wave interactions. Analysis of the empirical correlations suggested by the models indicate that, in addition to grain size and shape, grain boundary reflections, elastic anisotropy, and dislocation damping are factors that underly both fracture toughness and ultrasonic attenuation. One outcome is that ultrasonic attenuation can predict the size of crack blunting or process zones that develop in the vicinity active cracks in metals. This forms a basis for ultrasonic ranking according to variations in fracture toughness.

Vary, A.↗

NASA NTRS1986

The effect of diffusive hydrogen segregation on fracture of polycrystalline nickel

Hydrogen embrittlement of polycrystalline nickel was studied under conditions which allowed the diffusion and segregation of hydrogen to grain boundaries to be controlled. It was shown that even at high solute concentrations of hydrogen, the fracture mode was ductile shear rupture, if transport of hydrogen to the grain boundaries was not allowed. As the amount of hydrogen segregation to the grain boundaries was increased, the fracture mode became increasingly intergranular. Analysis of the temperature dependence of this transition from ductile rupture to transgranular fracture yields a hydrogen segregation enthalpy of 11.6 kJ/mol. The transition in the fracture mode was also observed at a constant aging temperature by increasing the solute hydrogen concentration. The kinetics of this fracture transition suggest that the hydrogen segregation layer extends about 35 nm from the grain boundary. It is suggested that the fracture mechanism is a softening of the material in this segregation region due to the high hydrogen concentration.

Lassila, D. H.↗

NASA NTRS1987

Chemically assisted ion beam etching of polycrystalline and (100)tungsten

A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

Garner, Charles↗

NASA NTRS1988

Uniform Etching For Polycrystalline Photoconductor Films

Prewetting surface overcomes problem of nonuniformity of etching often occuring in polycrystalline films at PbS and PbSe. Believed prewetting causes etchant to attack film uniformly. Because process involves wet chemistry, inexpensive and easy to use.

Barrett, John↗

NASA NTRS1989

Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

Kim, Namsoo P.↗

NASA NTRS1988

Concepts for interrelating ultrasonic attenuation, microstructure, and fracture toughness in polycrystalline solids

Conceptual models are advanced for explaining and predicting empirical correlations found between ultrasonic measurements and fracture toughness of polycrystalline solids. The models lead to insights concerning microstructural factors governing fracture processes and associated stress wave interactions. Analysis of the empirical correlations suggested by the models indicate that, in addition to grain size and shape, grain boundary reflections, elastic anisotropy, and dislocation damping are factors that underlie both fracture toughness and ultrasonic attenuation. One outcome is that ultrasonic attenuation can predict the size of crack blunting or process zones that develop in the vicinity of active cracks in metals. This forms a basis for ultrasonic ranking according to variations in fracture toughness.

Vary, A.↗

NASA NTRS1989

Oxide scale stresses in polycrystalline Ni200

An X-ray diffraction method has been successfully used to measure the oxidation stresses at room temperature in annealed and electropolished samples of polycrystalline Ni200 coupons oxidized in the temperature range 760 to 982 C for 4 h. The stresses on the free surface of the oxide were compressive and the average stress through the thickness normal to the oxide layer was found to be tensile. Surface stresses on the oxides formed at temperatures up to 927 C were found to be isotropic and both surface stresses and the average normal stress increased with increasing temperature of oxidation. At 982 C, the surface stresses were lower and this was attributed to the deformation and fracture of oxide layer resulting in stress relation.

Jayaraman, N.↗

NASA NTRS1989

Room temperature tensile ductility in polycrystalline B2 Ni-30Al-20Fe

A room-temperature tensile elongation of about 2.5 percent, where the only slip vector observed was the 100, has been determined for a double-extruded B2 Ni-30Al-20Fe alloy consisting of recrystallized equiaxed grains about 25 microns in diameter; these results suggest that 100-slip does not preclude limited ductility in polycrystalline B2 alloys in tension at low temperatures. A suppression of ordering through resort to rapid solidification, in other words, is not necessary for ductility, since the cast and as-extruded alloy presently examined is ordered.

Guha, Sumit↗

NASA NTRS1989

A characterization study of a hydroxylated polycrystalline tin oxide surface

In this study Auger electron spectroscopy, electron spectroscopy for chemical analysis (ESCA) and electron-stimulated desorption (ESD) have been used to examine a polycrystalline tin oxide surface before and after annealing in vacuum at 500 C. Features due to surface hydroxyl groups are present in both the ESCA and ESD spectra, and ESD shows that several chemical states of hydrogen are present. Annealing at 500 C causes a large reduction in the surface hydrogen concentration but not complete removal.

Hoflund, Gar B.↗

NASA NTRS1990

Review and statistical analysis of the ultrasonic velocity method for estimating the porosity fraction in polycrystalline materials

A review and statistical analysis of the ultrasonic velocity method for estimating the porosity fraction in polycrystalline materials is presented. Initially, a semi-empirical model is developed showing the origin of the linear relationship between ultrasonic velocity and porosity fraction. Then, from a compilation of data produced by many researchers, scatter plots of velocity versus percent porosity data are shown for Al2O3, MgO, porcelain-based ceramics, PZT, SiC, Si3N4, steel, tungsten, UO2,(U0.30Pu0.70)C, and YBa2Cu3O(7-x). Linear regression analysis produced predicted slope, intercept, correlation coefficient, level of significance, and confidence interval statistics for the data. Velocity values predicted from regression analysis for fully-dense materials are in good agreement with those calculated from elastic properties.

Roth, D. J.↗

NASA NTRS1990

Characterization study of polycrystalline tin oxide surfaces before and after reduction in CO

Polycrystalline tin oxide surfaces have been examined before and after reduction in 40 Torr of CO at 100 and 175 C using Auger electron spectroscopy (AES), electron spectroscopy for chemical analysis (ESCA), ion scattering spectroscopy (ISS) and electron stimulated desorption (ESD). The changes in the surface composition and chemical states of the surface species generally are subtle for the reductive conditions used. However, significant changes do occur with regard to the amounts and the chemical forms of the hydrogen-containing species remaining after both the 100 and 175 C reductions.

Drawdy, Jean E.↗