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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Research Update: Interface-engineered oxygen octahedral tilts in perovskite oxide heterostructures

Interface engineering of structural distortions is a key for exploring the functional properties of oxide heterostructures and superlattices. In this paper, we report on our comprehensive investigations of oxygen octahedral distortions at the heterointerface between perovskite oxides SrRuO{sub 3} and BaTiO{sub 3} on GdScO{sub 3} substrates and of the influences of the interfacially engineered distortions on the magneto-transport properties of the SrRuO{sub 3} layer. Our state-of-the-art annular bright-field imaging in aberration-corrected scanning transmission electron microscopy revealed that the RuO{sub 6} octahedral distortions in the SrRuO{sub 3} layer have strong dependence on the stacking order of the SrRuO{sub 3} and BaTiO{sub 3} layers on the substrate. This can be attributed to the difference in the interfacial octahedral connections. We also found that the stacking order of the oxide layers has a strong impact on the magneto-transport properties, allowing for control of the magnetic anisotropy of the SrRuO{sub 3} layer through interface engineering. Our results demonstrate the significance of the interface engineering of the octahedral distortions on the structural and physical properties of perovskite oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Interface composition between Fe{sub 3}O{sub 4} nanoparticles and GaAs for spintronic applications

Recent interest in spintronic applications has necessitated the study of magnetic materials in contact with semiconductor substrates; importantly, the structure and composition of these interfaces can influence both device functionality and the magnetic properties. Nanoscale ferromagnet/semiconductor structures are of particular interest. In this study, the interface structure between a monolayer of ferromagnetic magnetite (Fe{sub 3}O{sub 4}) nanoparticles and a GaAs substrate was studied using cross-sectional transmission electron microscopy techniques. It was found that a continuous amorphous oxide interface layer separates the nanoparticles from the GaAs substrate, and that iron diffused into the interface layer forming a compositional gradient. Electron energy-loss near-edge fine structures of the O K absorption edge revealed that the amorphous oxide is composed of γ-Fe{sub 2}O{sub 3} directly underneath the Fe{sub 3}O{sub 4} nanoparticles, followed by a solid solution of Ga{sub 2}O{sub 3} and FeO and mostly Ga{sub 2}O{sub 3} when approaching the buckled oxide/substrate interface. Real-space density functional theory calculations of the dynamical form factor confirmed the experimental observations. The implication of the findings on the optimization of these structures for spin injection is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Nanoscale Interfacial Engineering for Flexible Barrier Films

Alternating layers of organic and oxide thin films used as diffusion barriers in emerging flexible device technologies are vulnerable to degradation under the influence of mechanical stresses, temperature cycling, photodegradation, and chemically active environmental species. Delamination of the internal organic to oxide interfaces often limits the operational lifetime of the barrier system. We demonstrate a method for increasing the adhesion of organic and oxide thin films by generating nanostructures at the interface. We show that the adhesion of an acrylate to silicon oxide model system can be increased by up to an order of magnitude (from ~2 J/ m 2 to 24 J/m 2 ). Here, by altering the diameter and depth of the patterns in the model systems, the adhesion energy can be changed, and the delamination pathway can be controlled. In addition, we show that a patterned interface maintains a higher adhesion than its planar counterpart for all durations of UV–A and UV–B exposure

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Exotic exchange bias at epitaxial ferroelectric-ferromagnetic interfaces

Multiferroics in spintronics have opened up opportunities for future technological developments, particularly in the field of ferroelectric (FE)-ferromagnetic (FM) oxide interfaces with functionalities. We find strong exchange bias shifts (up to 84 Oe) upon field cooling in metal-oxide (Fe/BaTiO{sub 3}) films combining FM and FE layers. The saturation magnetic moment of the FM layer is also significantly higher than in bulk (3.0 ± 0.2 μ{sub B}/atom) and the reversal mechanism occurs via a domain nucleation process. X-ray absorption spectroscopy at the Fe K-edge and Ba L3-edge indicate presence of few monolayers of antiferromagnetic FeO at the interface without the formation of any BaFeO{sub 3} layer. Polarized neutron reflectometry corroborates with our magnetization data as we perform depth profiling of the magnetic and structural densities in these bilayers. Our first principles density functional calculations support the formation of antiferromagnetic FeO layers at the interface along with an enhancement of Fe magnetic moments in the inner ferromagnetic layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of neutron and ion irradiation on the metal matrix and oxide corrosion layer on Zr-1.0Nb cladding alloys

A detailed study has been carried out on recrystallised Zr-1.0Nb alloys corroded and irradiated under different conditions, including ex-autoclave and ex-reactor samples. After 540 days in reactor and damage around 5 dpa, the neutron irradiated sample shows no serious evidence for radiation enhanced corrosion and is still in pre-transition stage. The good corrosion resistance of the neutron irradiated Zr-1.0Nb can be related to the higher volume fraction of tetragonal phase and fewer interconnected nano porosity/cracks in the oxide. This indicates less tetragonal to monoclinic transition, leads to more protective oxide in the neutron irradiated sample, containing little evidence for short circuit paths for the penetration of oxygen or water towards the metal-oxide interface. These observations on a sample with a slow overall oxidation rate are consistent with the hypothesis that interconnected porosity can lead to early transitions and rapid oxidation. Tetragonal oxide can be either stabilised by irradiation, or stabilised by local release of impurity species from SPPs such as dissolution of Fe from Zr-Nb-Fe precipitates or radiation introduced precipitates (RIPs) which is likely to be small β-Nb clusters. The oxide consists of well-aligned columnar-equiaxed microstructure in the autoclave sample while a more complex oxide grain structure was observed in the neutron-irradiated sample. As oxide continues to grow, there are more < a > and < c > loops, dissolved Fe and RIPs in the metal matrix, however, the corrosion rate is low enough for the tetragonal oxide to stabilise and suboxide + Zr(Osat) phases exist for protectiveness, so there is no enhanced corrosion after radiation. In situ ion irradiation in the TEM revealed no visible defect clusters or voids in the oxide, suggesting that radiation damage to the metal matrix rather than oxide may have a stronger effect on corrosion mechanisms after neutron irradiation, however, cascade damages are not visible in this case. Neutron irradiation also seems to have little effect on promoting fast oxidation or dissolution of β-Nb precipitates into the surrounding oxide or metal during irradiation. Furthermore, these results are discussed in the light of the current mechanisms for corrosion of nuclear fuel cladding alloys.

(S)TEM↗
DOE OSTI2015

Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

On the Origin of Charge Generation in Hybrid TiOx/Conjugated Polymer Photovoltaic Devices

Hybrid films of donor/acceptor conjugated polymer/metal oxides are considered promising materials for low-cost, solution-processed solar cells. Because device performances depend on the nanoscale film morphologies, most attention and extensive efforts have been invested in improving the nanofabrication of hybrid films. Nevertheless, the reported conjugated polymer/metal oxide device efficiencies are still far poorer than those of all-organic and solid-state dye-sensitized metal oxide solar cells. To decouple the effect of insufficient morphology control from other generic photocurrent-limiting processes, we study the photocurrent generation at conjugated polymer-metal oxide interfaces in self-organized, highly ordered, and uniform hybrid nanostructures. A combination of small-angle X-ray scattering, high-resolution transmission electron microscopy (TEM), and energy-filtered TEM confirms the structure and composition of the highly ordered, high interfacial area hybrid cubic mesostructured films prepared by the coassembly of a titania precursor species, a water-soluble polythiophene derivative, and a block copolymer surfactant. Contactless time-resolved microwave photoconductivity (TRMC) measurements show a moderate 2-fold increase in the photoconductivity of the highly ordered TiO{sub x}/conjugated polymer mesostructured film compared to that of a pristine film of the same polymer, indicating inefficient exciton dissociation at the oxide/polymer interface. Furthermore, strong correlation between the TRMC results and the device performance reveals that most of the photogenerated carriers in the conjugated polymer/TiO{sub x} photovoltaic device originate from exciton dissociation in the polymer bulk, followed by electron transfer from the polymer to the metal oxide, and not at the interface. Therefore, the photovoltaic devices utilizing the highly ordered conjugated polymer/metal oxide mesostructured films are not primarily limited by insufficient morphology control but rather by the inefficient process of exciton dissociation in the polymer. This observation is in agreement with the low photocurrent densities generally observed in photovoltaic devices comprising conjugated polymer/metal oxide active layers.

14 SOLAR ENERGY↗
DOE OSTI2017

Electron Accumulation and Emergent Magnetism in LaMnO 3 /SrTiO 3 Heterostructures

Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here in this paper we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO$_{3}$/SrTiO$_{3}$ (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO$_{3}$. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO$_{3}$, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO$_{3}$ films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Large intrinsic anomalous Hall effect in SrIrO 3 induced by magnetic proximity effect

The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La 0.7 Sr 0.3 MnO 3 ) and a semimetallic iridate (SrIrO 3 ). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO 3 , which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Operational Conditions of Silicon Pixel Arrays for X-Ray Spectroscopy

Arrays of silicon sensors can be utilized in those spectroscopic applications where a high event throughput is needed, for example in synchrotron-based experiments. Yet, in such arrays several noise contributions, beyond the well-known leakage, thermal and flicker noises, can be present which are absent in single channel detectors. Additional noise is generated ultimately by the condition at the silicon/silicon oxide interface, which in turn depends on the parameters of the silicon oxide over the not-implanted gaps. We discuss how to control this region to obtain the best spectroscopic performances.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Method for fabricating embedded nanostructures with arbitrary shape

A layered heterostructure, comprising alternating layers of different semiconductors, wherein one of the atom species of one of the semiconductors has a faster diffusion rate along an oxidizing interface than an atom species of the other semiconductor at an oxidizing temperature, can be used to fabricate embedded nanostructures with arbitrary shape. The result of the oxidation will be an embedded nanostructure comprising the semiconductor having slower diffusing atom species surrounded by the semiconductor having the higher diffusing atom species. The method enables the fabrication of low- and multi-dimensional quantum-scale embedded nanostructures, such as quantum dots (QDs), toroids, and ellipsoids.

Wang, George T.↗
DOE OSTI2014

Long-range electronic reconstruction to a d xz,yz -dominated Fermi surface below the LaAlO 3 /SrTiO 3 interface

Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial “depth” - remains unclear. Examining LaAlO 3 /SrTiO 3 heterostructures at previously unexplored carrier densities $n_{2D}$ ≥ 6.9 × 10 14 cm –2 , we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential d xz,yz orbital occupancy extending over at least 100 nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO 3 emerge simultaneously at higher $n_{2D}$. We distinguish three areas in doped perovskite heterostructures: narrow (<20 nm) 2D interfaces housing superconductivity and/or other emergent phases, electronically isotropic regions far (>120 nm) from the interface and new intermediate zones where interfacial proximity renormalises the electronic structure relative to the bulk.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

Carrier induced defect creation at the semiconductor-oxide interface has been known as the origin of electronic device degradation for a long time, but how exactly the interface lattice can be damaged by carriers (especially low-energy ones) remains unclear. Here we carry out real-time time-dependent density functional theory simulations on concrete Si/SiO 2 interfaces to study the interaction between excited electrons and interface bonds. We show that the normal interface Si-H bonds are generally resistant to electrons due to the delocalized nature and high energy level of the Si-H antibonding states, and due to the high-energy barrier to break the Si-H bond. However, if an additional hydrogen atom exists by attaching to a nearby oxygen atom (forming a “Si-H···H-O” complex), the Si-H bond will be greatly weakened, including the reduction of energy barrier for bond breaking, and the lowering of the antibonding state energy level which favors electron injection. Together with the multiple vibrational excitation process, the corresponding Si-H bond can be broken much more easily. Thus we propose that the Si-H···H-O complex will be the center for defect creation and device degradation. Finally, we also explain why such a center might be relatively easy to form during the hydrogen annealing process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Formation of anodic layers on InAs (111)III. Study of the chemical composition

The chemical composition of {approx}20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NH{sub 4}F is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the concentrations of fluorine and hydroxide ions in the electrolyte and by diffusion processes in the growing layer. Fluorine accumulates at the (anodic layer)/InAs interface. Oxidation of InAs in an acid electrolyte with a low oxygen content and a high NH{sub 4}F content brings about the formation of anodic layers with a high content of fluorine and elemental arsenic and the formation of an oxygen-free InF{sub x}/InAs interface. Fluorinated layers grown in an alkaline electrolyte with a high content of O{sup 2-} and/or OH{sup -} groups contain approximately three times less fluorine and consist of indium and arsenic oxyfluorides. No distinction between the compositions of the layers grown in both types of fluorine-free electrolytes is established.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Unidirectional oxide hetero-interface thin-film diode

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of Functional and Electron Correlation on the Structure and Spectroscopy of the Al 2 O 3 (001)–H 2 O Interface

Oxide–water interfaces are ubiquitous, with many applications in industry and the environment, yet there is a great deal of controversy over their properties and microscopic structure. This controversy stems, in part, from the unique H-bond networks formed at different surface terminations and mineral compositions. Density functional theory simulations of these interfaces require an accurate description of both the oxide mineral and water in diverse H-bond environments. Thus, herein we simulate the Al 2 O 3 (001)–H 2 O interface using the PBE, PBE-TS, RPBE, SCAN, and HSE06-TS functionals to determine how calculated interfacial properties depend on the choice of functional. We find that the structure of the first few layers of water at the surface is determined by electron correlation in a way that cannot be approximated using semiemipirical van der Waals corrections. Of the functionals investigated, we find that SCAN yields the most accurate interfacial structure, dynamics, and sum frequency generation spectrum. Furthermore, SCAN leads to a reduction in the order of the 2D H-bond network of water at the alumina surface predicted by GGA functionals, leading to a significant decrease in the anisotropy of the diffusion coefficient at the surface. We emphasize the importance of using a functional which accurately describes electron correlation for more complex oxides, such as transition-metal oxides, where electron correlation may play an even greater role in determining the structure and dynamics of the oxide–water interface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗