DOE OSTI2025
Here, a new, solute-lean Al-0.3Zr-0.2Ce-0.2Cu (wt.%) alloy is developed for additive manufacturing that overcomes the classical tradeoff between conductivity and creep resistance. The rapid-cooling-enabled supersaturation of Zr, and its uniform distribution in α-Al matrix, along with formation of submicron (Ce,Cu)-rich intermetallic particles on solidification lead to unusually high creep resistance at 200 °C. Near-zero secondary creep rates are achieved up to the alloy yield stress (YS) of 65 MPa at 200 °C in as-fabricated state. The Zr-solute-induced dislocation-climb suppression mechanism underlying this improvement also restricts dynamic recovery above YS, as noted from appreciable primary creep and its transitioning to near-zero secondary creep rates. A combination of relatively coarse, epitaxially-grown α-Al grains, low Zr concentration in α-Al, and the impurity-scavenging effect of Ce to purify α-Al matrix produces high electrical conductivity of ∼48 %IACS. Aging precipitation of L1 2 -Al 3 Zr nanoprecipitates doubles the YS (to ∼150 MPa) at room temperature and increases alloy conductivity to ∼58 %IACS, but loss of solid-solution Zr out of α-Al matrix leads to activation of dislocation climb, degrading the creep properties as compared to the supersaturated Al-Zr solid solution in the as-fabricated state. Compared to L1 2 -Al 3 Zr nanoprecipitates, submicron (Ce,Cu)-rich particles formed on solidification are more effective at impeding dislocation climb, producing a threshold stress for dislocation creep of ∼ 50 MPa at 200 °C. The new alloy design concepts, especially solute-induced dislocation-climb suppression for creep resistance, explored here may pave way for the design of new metallic alloys for thermal/electrical conductors and other high-temperature applications.