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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Testing of the on-board attitude determination and control algorithms for SAMPEX

Algorithms for on-board attitude determination and control of the Solar, Anomalous, and Magnetospheric Particle Explorer (SAMPEX) have been expanded to include a constant gain Kalman filter for the spacecraft angular momentum, pulse width modulation for the reaction wheel command, an algorithm to avoid pointing the Heavy Ion Large Telescope (HILT) instrument boresight along the spacecraft velocity vector, and the addition of digital sun sensor (DSS) failure detection logic. These improved algorithms were tested in a closed-loop environment for three orbit geometries, one with the sun perpendicular to the orbit plane, and two with the sun near the orbit plane - at Autumnal Equinox and at Winter Solstice. The closed-loop simulator was enhanced and used as a truth model for the control systems' performance evaluation and sensor/actuator contingency analysis. The simulations were performed on a VAX 8830 using a prototype version of the on-board software.

Mccullough, Jon D.↗
NASA NTRSDate not supplied

Progress Towards Prolonged Deployment of SiC JFET-R ICs Into Previously Inaccessible Hostile Environments

This invited presentation describes demonstration of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. SiC junction field effect transistor-resistor (JFET-R) ICs with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient [1], 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber [2], and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes [3]. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C T-span) without significant change in signal (input /output) or power supply voltages [4]. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards this end, the processing that forms the SiC JFETs and resistors (without interconnect) for the NASA Glenn “Generation 12” design prototype JFET-R ICs was conducted at GE Research. Once the COVID-delayed IC interconnect and bond pad fabrication processing on these wafers is completed at NASA Glenn, the resulting chips will be packaged and oven-tested [5]. It is expected that further technology transfer to complete commercial production will lower investment and risk barriers to useful application deployment. For NASA, an initial high-value deployment is opening the Venus surface to extended missions for robotic scientific exploration.

Silicon Carbide↗
NASA NTRS1992

Shortcomings in ground testing, environment simulations, and performance predictions for space applications

This paper addresses the issues involved in radiation testing of devices and subsystems to obtain the data that are required to predict the performance and survivability of satellite systems for extended missions in space. The problems associated with space environmental simulations, or the lack thereof, in experiments intended to produce information to describe the degradation and behavior of parts and systems are discussed. Several types of radiation effects in semiconductor components are presented, as for example: ionization dose effects, heavy ion and proton induced Single Event Upsets (SEUs), and Single Event Transient Upsets (SETUs). Examples and illustrations of data relating to these ground testing issues are provided. The primary objective of this presentation is to alert the reader to the shortcomings, pitfalls, variabilities, and uncertainties in acquiring information to logically design electronic subsystems for use in satellites or space stations with long mission lifetimes, and to point out the weaknesses and deficiencies in the methods and procedures by which that information is obtained.

Stassinopoulos, E. G.↗
DOE OSTI2021

Quality assurance test of silicon photomultipliers and electronic boards for STAR event plane detector

The event plane detector (EPD), installed in the Solenoid Tracker at the Relativistic Heavy-Ion Collider located at the Brookhaven National Laboratory is a plastic scintillator-based device that measures the reaction centrality and event plane in the forward region of the relativistic heavy-ion collisions. We used silicon photomultiplier (SiPM) arrays to detect the photons produced in the scintillator via the fiber connection. Signals from the SiPM arrays were amplified by the front-end electronic (FEE) board, and sent to the analog-to-digital converter (ADC) boards for further processing via the receiver (RX) board. The full EPD system consisted of 24 super-sectors (SSs); each SS was equipped with two SiPM boards, two FEE boards and two RX boards, and they corresponded to 744 readout channels. All these boards were mass produced at the University of Science and Technology of China, with a dedicated quality assurance (QA) procedures applied to identify any problems before deployment. This article describes the details of the QA method and the related test system. As a result, the QA test results are presented along with the discussions.

EPD↗
NASA NTRS1983

Latchup in CMOS devices from heavy ions

It is noted that complementary metal oxide semiconductor (CMOS) microcircuits are inherently latchup prone. The four-layer n-p-n-p structures formed from the parasitic pnp and npn transistors make up a silicon controlled rectifier. If properly biased, this rectifier may be triggered 'ON' by electrical transients, ionizing radiation, or a single heavy ion. This latchup phenomenon might lead to a loss of functionality or device burnout. Results are presented from tests on 19 different device types from six manufacturers which investigate their latchup sensitivity with argon and krypton beams. The parasitic npnp paths are identified in general, and a qualitative rationale is given for latchup susceptibility, along with a latchup cross section for each type of device. Also presented is the correlation between bit-flip sensitivity and latchup susceptibility.

Soliman, K.↗
NASA NTRS2002

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

Marshall, Paul W.↗
NASA NTRS1984

The production of ion conics by oblique double layers

Magnetized test ions are subjected to acceleration through a numerically simulated oblique double layer in order to determine whether they emerge with velocity vectors aligned with or oblique to the ambient magnetic field. A criterion for oblique alignment, depending on the double-layer parameters and on the external magnetization, is obtained. When it is applied to observed and theoretical auroral double layers, this criterion predicts that accelerated heavy ions will be substantially less magnetic field aligned than will accelerated hydrogen ions, thus suggesting auroral double layers as a source of high-energy ion conics. Test particle simulations are also used to investigate the perpendicular heating of ions at low altitudes by the electric fields associated with moving auroral arcs. The rapid motion of small-scale structures in the arcs is suggested as a source of low-energy conical ion distributions, and the slow drifts of the entire arc forms are inferred to heat ionospheric ions.

Borovsky, J. E.↗
DOE OSTI2022

Microstructure and hardness evolution induced by annealing of ion irradiated LiTaO 3

We report the evolution of the microstructure and mechanical properties of low-energy heavy-ion-irradiated LiTaO 3 crystals annealed at various temperatures was investigated by transmission electron microscopy (TEM) observations and nanoindentation tests to extend the applications of irradiated LiTaO 3 crystals. Before annealing, randomly distributed voids formed in an approximately 200 nm thick region at the end of the ion irradiation range, which was attributed to preferential absorption of interstitials by the amorphous-crystalline interface. After annealing, a new directional diffusion path of defects was identified, resulting in a void string. Furthermore, void string diffusion to the free surface was also found during the annealing temperature increase process, which offers a potential application in designing custom sized-thickness exfoliation at the nanoscale. Meanwhile, two competing processes were identified during the annealing process: epitaxial recrystallization from the amorphous-crystalline interface and grain nucleation process in the amorphous region, which formed phases different from the matrix crystal structure, resulting in an interaction between them. Furthermore, the hardness of irradiated samples was also found to be affected by the annealing process; in particular, a hardness decrease induced by the interstitial Fe ions in the recrystallized region was also confirmed, which can improve the processability of samples for further application.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Search for the chiral magnetic effect in Au+Au collisions at $\sqrt{s_{NN}}$ = 27 GeV with the STAR forward event plane detectors

A decisive experimental test of the Chiral Magnetic Effect (CME) is considered one of the major scientific goals at the Relativistic Heavy-Ion Collider (RHIC) towards understanding the nontrivial topological fluctuations of the Quantum Chromodynamics vacuum. In heavy-ion collisions, the CME is expected to result in a charge separation phenomenon across the reaction plane, whose strength could be strongly energy dependent. The previous CME searches have been focused on top RHIC energy collisions. In this Letter, we present a low energy search for the CME in Au+Au collisions at $\sqrt{s_{NN}}$ = 27 GeV. We measure elliptic flow scaled charge-dependent correlators relative to the event planes that are defined at both mid-rapidity |η| < 1.0 and at forward rapidity 2.1 < |η| < 5.1. We compare the results based on the directed flow plane ( $Ψ$ 1 ) at forward rapidity and the elliptic flow plane ( $Ψ$ 2 ) at both central and forward rapidity. The CME scenario is expected to result in a larger correlation relative to $Ψ$ 1 than to $Ψ$ 2 , while a flow driven background scenario would lead to a consistent result for both event planes. In 10-50% centrality, results using three different event planes are found to be consistent within experimental uncertainties, suggesting a flow driven background scenario dominating the measurement. We obtain an upper limit on the deviation from a flow driven background scenario at the 95% confidence level. This work opens up a possible road map towards future CME search with the high statistics data from the RHIC Beam Energy Scan Phase-II.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2012

Single Event Rates for Devices Sensitive to Particle Energy

Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found that the environmental description that is most relevant to the low-energy contribution to the rate is a "stopping rate per unit volume" even when the physical mechanisms for a single-event effect do not require an ion to stop in some device region. Stopping rate tables are presented for four heavy-ion environments that are commonly used to assess device suitability for space applications. A conservative rate estimate utilizing limited test data is derived, and the example of SEGR rate in a power MOSFET is presented.

conservative rate↗
NASA NTRSDate not supplied

Progress Towards SiC ASICs for Extreme Temperature and Radiation Environments

This presentation describes development and demonstrations of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. Silicon carbide (SiC) junction field effect transistor-resistor (JFET-R) ICs fabricated by NASA Glenn Research Center with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient, 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C temperature span) without significant change in signal (input /output) or power supply voltages. While the operating frequency and functional complexity is far below silicon-based ICs, these SiC application specific ICs (ASICs) are nevertheless becoming capable of providing unique and advantageous harsh-environment circuit functionality without cooling/sheltering overhead. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards manufacture, a majority of processing steps to realize the next SiC JFET-R IC prototype wafer run have been outsourced to commercial foundry. It is expected that further upscaling combined with technology transfer to commercial production will lower investment and risk barriers to useful application deployment.

high temperature↗
NASA NTRS1993

Single Event Effects on Space Radiation Hardened 64K SRAMS at Room temperature

The laser threshold linear Energy transfer for single event upsetscan be estimaed, even at room temperature, for space radiation hardened 64K SRAMs. The memories where independently developed to quality for the Qualified Manufacturer's List by IBM and Honeywell. The memory was so hard that high energy heavy ions generated by the Van de Graff could not determine the SEU threshold at room temperature. Use of pulsed Laser tests would meake it possible to forgo very expensive testing at ultra-high energy accelerators.

Space Radiation 64K SRAMS↗
NASA NTRS1979

Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories

Soft errors have been induced in solid-state static RAM's by iron nuclei from the Lawrence Berkeley Laboratory (LBL) Bevalac, in experiments designed to prove the ability of iron-group cosmic rays to generate such errors. Subsequently, various delidded device types were tested in beams of argon and krypton ions from the LBL 88-inch Cyclotron, at energies near 2 MeV/nucleon. The latter tests showed that some devices are essentially immune to bit error while others are quite susceptible. Good agreement was obtained with model predictions in cases where the latter exist. Latchup, whose cause is attributed to individual heavy ions, was also observed in some device types.

Kolasinski, W. A.↗
DOE OSTI2021

Heavy Ion Minibeam Therapy: Side Effects in Normal Brain

The purpose of this work was to investigate whether minibeam therapy with heavy ions might offer improvements of the therapeutic ratio for the treatment of human brain cancers. To assess neurotoxicity, we irradiated normal juvenile rats using 120 MeV lithium-7 ions at an absorbed integral dose of 20 Gy. Beams were configured either as a solid parallel circular beam or as an array of planar parallel minibeams having 300-micron width and 1-mm center-to-center spacing within a circular array. We followed animals for 6 months after treatment and utilized behavioral testing and immunohistochemical studies to investigate the resulting cognitive impairment and chronic pathologic changes. We found both solid-beam therapy and minibeam therapy to result in cognitive impairment compared with sham controls, with no apparent reduction in neurotoxicity using heavy ion minibeams instead of solid beams under the conditions of this study.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2025

Acceptance dependence of factorial cumulants, long-range correlations, and the antiproton puzzle

We analyze joint factorial cumulants of protons and antiprotons in relativistic heavy-ion collisions and point out that they obey the scaling Ĉnmp,p¯∝〈Np〉n〈Np¯〉m as a function of acceptance when only long-range correlations are present in the system, such as global baryon conservation and volume fluctuations. This hypothesis can be directly tested experimentally without the need for corrections for volume fluctuations. We show that if correlations among protons and antiprotons are driven by global baryon conservation and volume fluctuations only, the equality Ĉ2p/〈Np〉2=Ĉ2p¯/〈Np¯〉2 holds for large systems created in central collisions. We point out that the experimental data of the STAR Collaboration from phase I of the Relativistic Heavy Ion Collider (RHIC) beam energy scan (BES) are approximately consistent with the scaling Ĉnmp,p¯∝〈Np〉n〈Np¯〉m, but the normalized antiproton correlations are stronger than those of protons, −Ĉ2p¯/〈Np¯〉2>−Ĉ2p/〈Np〉2. Existing theoretical baselines, based on global baryon conservation and volume fluctuations, cannot explain the data, which we refer to as the antiproton puzzle. We also discuss high-order factorial cumulants which can be measured with sufficient precision within phase II of RHIC-BES.

Bzdak, Adam↗
NASA NTRS1990

Cleft contribution to ring current formation

The storm time transport of ionospheric plasma from the 'cleft fountain' to the plasma sheet and ring current is investigated by means of three-dimensional trajectory codes. Using observations to define the source location and flow rate, test particles are traced during a 'taillike' to 'dipolelike' reconfiguration of the geomagnetic field. Emphasis is placed on the behavior of heavy ions of low charge state, O(+). As a result of their long periods of gyration, these ions are highly sensitive to rapid field variations and possibly display transient nonadiabatic motions. It is demonstrated that O(+) which have originated in the high-latitude ionosphere but which find themselves in the vicinity of the equator at substorm onset can experience considerable energization (from several keV up to several hundred keV) and pitch angle increase leading to trapping, as an effect of the induced electric field.

Delcourt, D. C.↗
NASA NTRS1981

CMOS RAM cosmic-ray-induced-error-rate analysis

A significant number of spacecraft operational anomalies are believed to be associated with cosmic-ray-induced soft errors in the LSI memories. Test programs using a cyclotron to simulate cosmic rays have established conclusively that many common commercial memory types are vulnerable to heavy-ion upset. A description is given of the methodology and the results of a detailed analysis for predicting the bit-error rate in an assumed space environment for CMOS memory devices. Results are presented for three types of commercially available CMOS 1,024-bit RAMs. It was found that the HM6508 is susceptible to single-ion induced latchup from argon and krypton ions. The HS6508 and HS6508RH and the CDP1821 apparently are not susceptible to single-ion induced latchup.

Pickel, J. C.↗