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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Electron-beam lithography for micro and nano-optical applications

Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

electron-beam lithography↗
NASA NTRS1986

Vehicle charging of the shuttle Orbiter during electron beam emission

The Vehicle Charging And Potential (VCAP) experiment has flown as part of shuttle missions STS-3/OSS-1 in March 1982 and STS-51F/Spacelab-2 in July/August 1985. During these missions, a 1 keV electron beam was emitted with currents of 50, 100 and 150 mA. The Orbiter response to electron beam emission was measured by a charge and current probe located in the payload bay. Examination of these vehicle charging and return current signatures has revealed a variety of unanticipated signatures in addition to several expected results. The principle results are listed and briefly discussed.

Hawkins, J. G.↗
NASA NTRS1987

The plasma environment during particle beam injection into space plasmas. I - Electron beams. II - Charge-neutral beams

A realistic electrostatic simulation model is used to investigate the plasma environment in the near vicinity of a spacecraft during the injection of electon beams from the spacecraft. The model is described, and the cases of injection into vacuum and into a low-density plasma are addressed. The relationship of the two-dimensional results to the purely field-aligned one-dimensional simulations is discussed. The dependence of the results on the ambient plasma density is investigated. Then, the properties of a charge-neutral beam and the plasma response are examined for the case where the beam has nonzero velocity components parallel and perpendicular to the magnetic field. The parameters used in the simulation are described, and the properties of the beam injection into the vacuum and in the case where a plasma is present are given.

Pritchett, P. L.↗
NASA NTRSDate not supplied

Al-Cu-Zn-Mg Alloy for Additive Manufacturing by Electron Beam Deposition

The application of fusion-based additive manufacturing (AM) to aircraft structural components is limited by the lack of high-strength aluminum alloys optimized for AM processing. High strength aluminum alloys (such as 7050-T7451) are difficult to process by AM because of their solidification cracking susceptibility and loss of volatile alloying elements such as Zn and Mg. The performance of a proprietary Al-Cu-Zn-Mg alloy wire feedstock was evaluated for AM utilizing electron beam deposition. Deposit microstructure, composition, occurrence of porosity and cracking, and post-heat treatment tensile and fracture toughness were correlated with deposition parameters. Post-heat treatment strength, ductility, and fracture toughness were lower than typical values for wrought 7050-T7451, related to significant losses of Zn and Mg and to porosity. Recommendations are offered for modifications to wire feedstock composition and adjustments to deposition conditions and heat treatment to enable AM of electron beam deposited material that has strength comparable to 7050-T7451 wrought products.

Al-Cu-Zn-Mg alloy, electron beam deposition, mecha↗
NASA NTRS1984

Correlation of auroral hiss and upward electron beams near the polar cusp

Data were obtained from the DE-1 high-altitude plasma instrument (HAPI) and plasma wave instrument (PWI) during outbound passes through the polar cusp near local noon. The observed distribution functions of electron beams are fitted by drifting Maxwellian functions and the observed distribution functions of hot background electrons by isotropic Maxwellian functions. In addition, the cold plasma density is inferred from knowledge of the electron plasma frequency and the measured density of the warm plasma, including the electron beam distribution. The empirically fitted plasma parameters, including density, temperature and drifting energy, are used to solve the linear dispersion equation for the resulting whistler mode emissions. Because the whistler mode becomes quasi-electrostatic for wave-normal angles near the resonance cone, the electrostatic approximation is used for the whistler mode dispersion relation. The results of wave instability analyses are then compared with the wave observations. A ray tracing of cusp hiss emission is conducted to locate the wave source region (at about one earth-radius).

Lin, C. S.↗
NASA NTRS1990

Ionospheric modification using relativistic electron beams

The recent development of comparatively small electron linear accelerators (linacs) now makes possible a new class of ionospheric modification experiments using beams of relativistic electrons. These experiments can potentially provide much new information about the interactions of natural relativistic electrons with other particles in the upper atmosphere, and it may also make possible new forms of ionization structures extending down from the lower ionosphere into the largely un-ionized upper atmosphere. The consequences of firing a pulsed 1 A, 5 Mev electron beam downwards into the upper atmosphere are investigated. If a small pitch angle with respect to the ambient geomagnetic field is selected, the beam produces a narrow column of substantial ionization extending down from the source altitude to altitudes of approximately 40 to 45 km. This column is immediately polarized by the natural middle atmosphere fair weather electric field and an increasingly large potential difference is established between the column and the surrounding atmosphere. In the regions between 40 to 60 km, this potential can amount to many tens of kilovolts and the associated electric field can be greater than the field required for breakdown and discharge. Under these conditions, it may be possible to initiate lightning discharges along the initial ionization channel. Filamentation may also occur at the lower end to drive further currents in the partially ionized gases of the stratosphere. Such discharges would derive their energy from the earth-ionosphere electrical system and would be sustained until plasma depletion and/or electric field reduction brought the discharge under control. It is likely that this artificially-triggered lightning would produce measurable low-frequency radiation.

Banks, Peter M.↗
NASA NTRS1990

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS1989

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS1970

Nondestructive assessment of penetration of electron-beam welds

Empirical method correlates penetration of an electron-beam weld with external measurements of the weld. Empirical polygon accurately confirms full-penetration welds while a second, larger polygon provides for penetration of welds near the tip.

Harmon, T. J.↗