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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Effects of temperature on helium bubble behaviour in Fe–9Cr alloy

In the present study, Fe–9Cr model alloys were irradiated by 275 keV He + ions at 500 to 800 °C to a peak damage level and implanted helium content of 0.5 dpa and 0.75 at% He, respectively. Effects of temperature on He bubble behaviour were studied by transmission electron microscopy (TEM) to reveal the temperature effects. The bubble spatial distribution changes from homogenous at 500 and 600 °C to heterogeneous at 700 and 800 °C, due to preferential bubble precipitation on dislocations and grain boundaries at high temperature. Faceted bubbles with low energy faces along the {001} planes were present at all four temperatures and are attributed to surface energy minimization. Bubble precipitation on the GBs became more pronounced with increasing temperature. Meanwhile, the cavity swelling increased with increasing temperature, from 0.59% at 500 °C to 8.21% at 800 °C with a sharp increase above 700 °C. By analysing the temperature dependence of bubble size and density, a transition temperature between low and high temperature regimes was obtained in terms of different activation energies which are related to different bubble nucleation and formation mechanisms.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Extended defects in GaAs/GaAs 1-x Sb x /GaAs (001) heterostructures

The atomic-scale structure of extended defects in GaAs/GaAs 1-x Sb x /GaAs (001) heterostructures has been characterized using aberration-corrected scanning transmission electron microscopy. The defect located at the tensile-strained GaAs(cap)/GaAs 0.34 Sb 0.66 interface had no edge component in the projection plane and is identified as either a dissociated screw dislocation or a partial dislocation dipole. The associated intrinsic stacking fault is bounded by two 30° Shockley partial dislocations of opposite sign. Another defect, located at the compressively-strained GaAs 0.91 Sb 0.09 /GaAs(substrate) interface, is identified as a dissociated 90° dislocation. The associated intrinsic stacking fault is bounded by a 30° Shockley partial dislocation and a partial dislocation with a Burgers vector of either or , where a is the lattice constant. Unpaired atomic columns observed at the cores of the 30° Shockley partial dislocations indicate that both defects belong primarily to the glide set.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A new mechanism for void-cascade interaction from nondestructive depth-resolved atomic-scale measurements of ion irradiation–induced defects in Fe

The nondestructive investigation of single vacancies and vacancy clusters in ion-irradiated samples requires a depth-resolved probe with atomic sensitivity to defects. The recent development of short-pulsed positron beams provides such a probe. Here, we combine depth-resolved Doppler broadening and positron annihilation lifetime spectroscopies to identify vacancy clusters in ion-irradiated Fe and measure their density as a function of depth. Despite large concentrations of dislocations and voids in the pristine samples, positron annihilation measurements uncovered the structure of vacancy clusters and the change in their size and density with irradiation dose. When combined with transmission electron microscopy measurements, the study demonstrates an association between the increase in the density of small vacancy clusters with irradiation and a remarkable reduction in the size of large voids. This, previously unknown, mechanism for the interaction of cascade damage with voids in ion-irradiated materials is a consequence of the high porosity of the initial microstructure.

36 MATERIALS SCIENCE↗
NASA NTRS1984

The microstructure of minerals in coarse-grained Ca-Al-rich inclusions from the Allende meteorite

Transmission electron microscopy (TEM) is used to investigate the microstructure and microchemistry of minerals in Ca-Al-rich, coarse-grained inclusions (CAI) from the meteorite. The spinels contain only low to moderate dislocation densities and are characterized by a ubiquitous, fine black spotty texture that is thought to originate from a slightly nonstoichiometric composition. Whereas the Ti-Al-pyroxenes are relatively devoid of features, they contain veins of secondary phases apparently deposited in unhealed cracks. Chromite is identified in the veins, indicating transport of oxidized iron during alteration. The melilites show the greatest variety of microstructures and are the most heavily altered phase in CAI. High dislocation densities are common and the crystals exhibit considerable internal strain, suggesting that they have not been annealed.

Barber, D. J.↗
NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Work was performed to improve web base material with a goal of obtaining solar cell efficiencies in excess of 18% (AM1). Efforts in this program are directed toward identifying carrier loss mechanisms in web silicon, eliminating or reducing these mechanisms, designing a high efficiency cell structure with the aid of numerical models, and fabricating high efficiency web solar cells. Fabrication techniques must preserve or enhance carrier lifetime in the bulk of the cell and minimize recombination of carriers at the external surfaces. Three completed cells were viewed by cross-sectional transmission electron microscopy (TEM) in order to investigate further the relation between structural defects and electrical performance of web cells. Consistent with past TEM examinations, the cell with the highest efficiency (15.0%) had no dislocations but did have 11 twin planes.

Meier, D. L.↗
DOE OSTI2025

Atomic‐Scale Mechanisms of Nucleation and Stabilization in CuCrO 2 and CuFeO 2 Delafossite Thin Films on Al 2 O 3

Abstract Delafossite thin films exhibit a range of intriguing physical properties derived from their layered structure, which consists of alternating noble metal ( A + ) and ( B O 2 − ) sublayers in an AB O 2 stoichiometry. The integration of these properties into functional devices requires the successful epitaxial growth of delafossites as thin films on appropriate substrates. Unfortunately, their unique lattice geometry complicates growth, as different delafossites display variable behavior on the same substrate, often unrelated to lattice mismatch. This suggests the presence of yet unidentified stabilization mechanisms that enable the selective growth of certain delafossites, allowing them to be grown either as films themselves or to be used as buffer layers for subsequent deposition. In this study, advanced scanning transmission electron microscopy (STEM) is employed to investigate the nucleation mechanisms governing the stable growth of Cu‐based delafossites on Al 2 O 3 , specifically CuCrO 2 and CuFeO 2 thin films synthesized via molecular‐beam epitaxy. These findings reveal that a combination of a misfit dislocation network at the interface and monolayer‐deep chemical intermixing effectively relieves lattice mismatch strain. This mechanism, which differs fundamentally from that observed in Pd‐based delafossites, provides key insights into the controlled epitaxy of delafossite materials.

Scheid, Anna [Max Planck Institute for Solid State↗
DOE OSTI2021

Utilizing a Dynamic Segmentation Convolutional Neural Network for Microstructure Analysis of Additively Manufactured Superalloy 718

Additive manufacturing (AM) is revolutionizing almost all industries through the production of intricate geometries previously prohibited by cost or machinability. Ni-based superalloys form a primary alloy class for high temperature applications in the petrochemical, aerospace, and nuclear industries because of their intrinsic resistance to creep and the ability to heat treat the superalloy for high strength. Despite these attractive properties, the extreme work hardening of Ni-based superalloys makes traditional manufacturing of complex shapes difficult and thus, these alloys are an attractive target for AM. Superalloy 718 was chosen as an example superalloy because of the wide variety of precipitates that can form within its composition space from the repetitive heating and cooling cycles of the AM process. The precipitates and other microstructure features, such as grain boundaries and dislocations, will dictate the mechanical properties and thus, there is an extensive challenge to characterize the size, number density, composition, and volume fraction of each microstructural feature from AM fabrication using analytical electron microscopy. This work focused on the application of a pixel-wise classification machine learning (ML) model called a dynamic segmentation convolutional neural network (DSCNN) to identify the microstructural features of an as-fabricated additively manufactured superalloy 718.

Taller, Stephen↗
DOE OSTI2020

Heteroepitaxial Integration of ZnGeN 2 on GaN Buffers Using Molecular Beam Epitaxy

Recently theorized hybrid II-IV-N 2 /III-N heterostructures, based on current commercialized (In,Ga)N devices, are predicted to significantly advance the design space of highly efficient optoelectronics in the visible spectrum, yet there are few epitaxial studies of II-IV-N 2 materials. In this work, we present heteroepitaxial ZnGeN 2 grown on GaN buffers and AlN templates. We demonstrate that a GaN nucleating surface is crucial for increasing the ZnGeN 2 crystallization rate to combat Zn desorption, extending the stoichiometric growth window from 215 degrees C on AlN to 500 degrees C on GaN buffers. Structural characterization reveals well-crystallized films with threading dislocations extending from the GaN buffer. These films have a critical thickness for relaxation of 20-25 nm as determined by reflection high energy electron diffraction (RHEED) and cross-sectional scanning electron microscopy (SEM). The films exhibit a cation-disordered wurtzite structure, with lattice constants a = 3.216 +/- 0.004 A and c = 5.215 +/- 0.005 A determined by RHEED and X-ray diffraction (XRD). This work demonstrates a significant step toward the development of hybrid ZnGeN 2 -GaN integrated devices.

36 MATERIALS SCIENCE↗
NASA NTRS1987

Microscopy of epitaxially grown beta-SiC on 001-plane silicon

Various defects occurring in epitaxially grown layers of beta-SiC are characterized by TEM, and the mechanisms of growth and defect formation are discussed. In particular, attention is given to the following types of defects: misfit dislocations, interfacial twins, antiphase boundaries, threading dislocations, and wide stacking faults. Details of the experimental procedure are given.

Pirouz, P.↗
DOE OSTI2024

Alloying effects on deformation induced microstructure evolution in copper

In this work, we investigated the effects of alloying elements on plastic deformation and microstructure evolution in polycrystalline copper (Cu) and Cu alloyed with 1 wt. % lead (Cu-1 %Pb). These materials were selected due to the size mismatch between Cu and Pb, with the latter forming precipitates at grain boundaries. Multi-modal characterization techniques, including neutron diffraction, electron backscatter diffraction (EBSD), and transmission electron microscopy (TEM), along with finite element simulations were employed to study the deformation behavior across multiple length scales. While both Cu and Cu-1%Pb exhibited similar macroscale response and final deformation textures, both dislocation line profile analysis and TEM revealed increased dislocation density in deformed Cu-1%Pb specimens. The presence of lead precipitates also significantly affected local plastic deformation during compression, with their influence diminishing with increasing strain. These results demonstrate the complex relationships between alloying elements, plastic deformation, microstructural evolution, and material behavior under load. The insights gained from this multi-scale and multi-technique approach contribute to the fundamental understanding of microstructural evolution in immiscible alloys and are valuable for tailoring the properties of structural materials for specific engineering applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Heavy ion irradiation response of an additively manufactured 316LN stainless steel

Additive manufacturing has become an appealing technique to fabricate three-dimensional metallic materials and components for nuclear reactors. However, response of additively manufactured alloys to high-dose heavy ion irradiations at elevated temperatures is still not well understood. Here, an additively manufactured 316LN austenitic stainless steel with high-density solidification cells was irradiated using 3.5 MeV Fe ion to a peak dose of 220 dpa at 450 °C. Microscopy studies show a lower Frank loop density and smaller size in the additively manufactured sample compared with its cold worked counterpart, and the cellular structures may largely suppress the formation of perfect loops and dislocation networks and reduce the magnitude of solute segregations comparing with high angle grain boundaries. In conclusion, the present work advances the understanding on the high-temperature irradiation response of additively manufactured steels for nuclear reactor applications.

36 MATERIALS SCIENCE↗
NASA NTRS1983

Correlation of Rupture Life, Creep Rate, and Microstructure for Type 304 Stainless Steel

The stress and temperature sensitivites of the rupture life and secondary creep rate were examined in detail for a single heat of type 304 stainless steel (9T2796). Assuming that the rupture life has a power law stress dependency, relatively small differences in the stress exponent were observed over a broad range of stress and temperature. In contrast, large changes were observed for equivalent parameter for secondary creep rate. As a result of these differences, the Monkman-Grant correlation was sensitive to stress and temperature below 650 C. Metallurgical studies based on light and transmission electron microscopy suggested that the temperature and stress sensitivities of secondary creep rate at temperatures below 650 C were related to features of the substructure not present at higher temperature. Specifically, the presence of a fine dislocation network stabilized by precipitates altered the stress and temperature sensitivities relative to what might be expected from high temperature studies.

Swindeman, R. W.↗
DOE OSTI2024

Generalized rate theory for void and bubble swelling and its application to δ -plutonium

A rate theory for void and bubble swelling is derived that allows both vacancies and self-interstitial atoms to be generated by thermal activation at all sinks. In addition, they can also be produced by displacement damage from external and internal radiation. This generalized rate theory (GRT) is applied to swelling of gallium-stabilized δ-plutonium in which α-decay causes the displacement damage. Since the helium atoms produced also become trapped in vacancies, a distinction is made between empty and occupied vacancies. The growth of helium bubbles observed by transmission electron microscopy in weapons-grade and in material enriched with Pu238 is analyzed, using different values for the formation energy of self-interstitial atoms (SIA) and two different sets of relaxation volumes for the vacancy and for the SIA. One set allows preferential capture of SIA at dislocations, while the other set gives equal preference to both vacancy and SIA. It is found that the helium bubble diameters observed are in better agreement with GRT predictions if no preferential capture occurs at dislocations. Therefore, helium bubbles in δ-plutonium will not evolve into voids. Furthermore, the helium density within the bubbles remains sufficiently high to cause thermal emission of SIA. Based on a helium density between two to three helium atoms per vacant site, the sum of formation and migration energies must be around 2.0 eV for SIA in δ-plutonium.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Extensive nanoprecipitate morphology transformation in a nanostructured ferritic alloy due to extreme thermomechanical processing

Nano-oxide precipitates in a modern nanostructured ferritic alloy were investigated after extreme thermomechanical processing into a thin-walled tube geometry. It was found that the morphology of the precipitates changed from spherical to rod-shaped, with some increasing to aspect ratios of up to 9, despite the precipitate volume fraction (0.3%) and number density (> 10 23 m -3 ) of precipitates remaining unchanged. High-resolution electron microscopy showed that the precipitates likely remained coherent with the Fe-matrix, while atom probe tomography confirmed that the precipitate compositions remained unaffected by the transformation. The morphological change was attributed to the shearable nature of the (Y,Ti,O)-rich precipitates, indicating they should be considered as “soft” obstacles to dislocation motion. The elongation was most pronounced in larger (>5 nm) precipitates, which may be caused by preferential dissolution of the smallest (1–3 nm) precipitates followed by the competition between re-precipitation and solute diffusion to larger precipitates during recovery heat treatments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Microstructure-Property Relationships in Epitaxial Cu(In, Ga)Se2 Solar-Cell Absorbers

Epitaxially grown Cu(In,Ga)Se 2 (CIGS) absorber layers were analyzed by various techniques in scanning electron microscopy in order to reveal microstructure-property relationships in these thin films. Owing to their epitaxial nature, these CIGS absorber layers do not contain any grain boundaries, but only anti-phase domains (APDs) and dislocations. By combining electron channeling-contrast imaging, electron backscatter diffraction, and cathodoluminescence (CL), in some cases on identical specimen positions of polished cross-sections of CIGS/Mo/glass stacks, it was possible to correlate the presence and orientations of APDs and dislocations with the lateral distributions of the CL intensity and emission-peak energy. We studied CIGS layers with three different [Ga]/([Ga]+[In]) ratios as well as with and without NaF/KF treatments. Considerable differences between the CIGS layer properties in the microstructure-property relationships were found, depending on the growth parameters. Dislocations in the epitaxial CIGS layers do not tend to exhibit strong CL intensity decreases, which contrasts with the situation in numerous other semiconductor materials.

anti-phase domains↗
NASA NTRS1979

Structure and electrical activity of planar defects in EFG ribbons

Optical, electron beam induced current (EBIC), and transmission electron microscopy were used to study the structure and electrical activity of planar defects in EFG silicon. What appears to be twin boundaries by both optical microscopy plus etching, and by EBIC are in reality systems of microtwins, some of which are only a few atomic lattice planes thick. The electrical activity of planar defects appears to be correlated with emission of dislocations especially at termination points. Impurity effects may also play a role. Twin boundaries per se appear not to be electrically active.

Ast, D. G.↗
DOE OSTI2020

Atom probe tomography characterization of ion and neutron irradiated Alloy 800H

Alloy 800H is a high temperature and creep resistant alloy, and is considered as a candidate alloy for use in Generation IV nuclear reactor systems. To clarify the alloy's behavior under irradiation, samples were subjected to single ion irradiations up to 20 dpa at 440°C, a dual ion/He irradiation to 17 dpa at 460°C, and a neutron irradiation to 17 dpa at 385°C. The irradiated microstructures were characterized using atom probe tomography to complement previously published transmission electron microscopy studies. Additionally, after single ion irradiation, sparse fine Al and Ti clusters were observed after 1dpa, while high number densities of nanoscale Ni-Al-Ti clusters, Cr-Ti rich carbides, and Si-decorated dislocation loops developed after 10 and 20 dpa. The microstructure formed during single ion irradiation exhibited a strong depth dependence. No significant differences were observed between the single and dual ion irradiations. While Ni-Al-Ti clusters, Cr-Ti rich carbides, and Si-decorated dislocation loops were also observed after neutron irradiation, the neutron-irradiated microstructure differed from those found in the ion-irradiated samples.

36 MATERIALS SCIENCE↗