“Generational” Electrical Energy Transformation through the DOE Office of Electricity
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Abstract not provided.
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The dielectric constant and the voltage absorption length was measured for four Apollo 17 soil samples (73241, 74220, 75061, 76501) and for two Apollo 17 rock samples (76315 and 79135) at 450 MHz frequency. The dielectric constant and absorption length measurements made on the lunar samples are reviewed and related to the transition element concentration in these samples. The significance of the laboratory measurements for radar observations is discussed.
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Experimental work to determine the temperature dependence of the heat loss of thin wires in hydrogen is described. An explanation for the peculiar form of the current voltage curve is provided.
The as made and degraded states of thin film silicon (TFS) based modules have been modelled in terms of series resistance losses. The origins of these losses lie in interface and bulk regions of the devices. When modules degrade under light exposure, increases occur in both the interface and bulk components of the loss based on series resistance. Actual module performance can thus be simulated by use of only one unknown parameter, shunt losses. Use of the simulation to optimize module design indicates that the current design of 25 cells per linear foot is near optimum. Degradation performance suggests a shift to approx. 35 cells to effect maximum output for applications not constrained to 12 volts. Earlier studies of energy based performance and tandem structures should be updated to include stability factors, not only the initial loss factor tested here, but also appropriate annealing factors.
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Abstract not provided.
A quantum dot microscope apparatus is provided. A further aspect employs a tilted or tapered end or tip on a microscopic probe. Another aspect of the present apparatus employs a probe including a quantum dot with only one tunneling lead connected to a power source. A manufacturing aspect includes creating a tapered or asymmetrically shaped specimen-facing end of a probe where a quantum dot is located on the end. A further manufacturing aspect includes using focused ion-beam milling to create a tip or end of a quantum dot microscope probe.