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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer. Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM. Here a phase-field model is developed, based on materials properties determined by ab initio calculations, to investigate the role of electrical bias, heat transport and defect-induced Vegard strain in the resistive switching behavior, using MO 2- x systems such as HfO 2- x as a prototypical model system. It successfully captures the CF formation and resultant bipolar resistive switching characteristics. High-throughput simulations are performed for RRAMs with different material parameters to establish a dataset, based on which a compressed-sensing machine learning is conducted to derive interpretable analytical models for device performance (current on/off ratio and switching time) metrics in terms of key material parameters (electrical and thermal conductivities, Vegard strain coefficients). These analytical models reveal that optimal performance (i.e., high current on/off ratio and low switching time) can be achieved in materials with a low Lorenz number, a fundamental material constant. This work provides a fundamental understanding to the resistive switching in RRAM and demonstrates a computational data-driven methodology of materials selection for improved RRAM performance, which can also be applied to other electro-thermo-mechanical systems.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Resistive switching in doped BiFeO{sub 3} films

Polycrystalline Bi{sub 0.9}Sr{sub 0.1}FeO{sub 3} and Bi{sub 0.9}Ca{sub 0.1}Fe{sub 0.9}Co{sub 0.1}O{sub 3} films (BXFO) were synthesized by sol-gel spin coating method. Local resistive switching behavior was investigated. Bipolar resistive switching characteristics were clearly observed in both two samples. However, for the Bi{sub 0.9}Sr{sub 0.1}FeO{sub 3} film, the switching from the low resistance (LRS) to the high resistance (HRS) occurred at positive bias and the switching from the HRS to the LRS at negative bias. On the contrary, the resistance of Bi{sub 0.9}Ca{sub 0.1}Fe{sub 0.9}Co{sub 0.1}O{sub 3} film was switched from the LRS to the HRS when a negative bias was applied. Possible mechanisms for both resistive switching forms were discussed on the basis of the Schottky-like barrier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermally activated switching of perpendicular magnet by spin-orbit spin torque

We theoretically investigate the threshold current for thermally activated switching of a perpendicular magnet by spin-orbit spin torque. Based on the Fokker-Planck equation, we obtain an analytic expression of the switching current, in agreement with numerical result. We find that thermal energy barrier exhibits a quasi-linear dependence on the current, resulting in an almost linear dependence of switching current on the log-scaled current pulse-width even below 10 ns. This is in stark contrast to standard spin torque switching, where thermal energy barrier has a quadratic dependence on the current and the switching current rapidly increases at short pulses. Our results will serve as a guideline to design and interpret switching experiments based on spin-orbit spin torque.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Switching efficiency improvement in spin torque majority gates

Spin torque majority gate (STMG) is one of the promising options for beyond complementary metal-oxide-semiconductor logic. Improvement of its performance—switching speed vs. required current—is critical for its competitiveness. In this paper, (a) we identify an optimized layout of the gate comprised of thin magnetic wires with in-plane magnetization; (b) we optimize geometries of perpendicular magnetization spin torque majority gates. Micromagnetic simulations demonstrate an improvement in switching current for in-plane magnetization (with less than 1 ns switching time) from 6 mA in the original scheme to 1.5 mA in the present one. Additionally, failures of switching caused by vortex formation are eliminated and desired output magnetization is achieved. Various geometries of STMG with perpendicular magnetization are explored. The scheme with a straight cross proves to be the most advantageous. It is predicted to operate with the switching current of 50 μA and less than 4 ns switching time.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Accelerated domain switching speed in single-crystal LiNbO{sub 3} thin films

By using ionic implantation and wafer bonding technologies, we peeled off a single-crystal LiNbO{sub 3} thin film in the atomic-layer smoothness from the surface of a bulk Z-cut LiNbO{sub 3} single crystal. X-ray diffraction patterns showed only (00l) orientation of the film. From positive-up-negative–down pulse characterization, we measured domain switching current transients under various short-pulse voltages, where we observed domain switching currents to occur separately at time after initial capacitor charging currents. This is similar to early observations in bulk ferroelectric single crystals, where apparent positive/negative coercive fields of domain switching determined from polarization-electric field hysteresis loops always equal maximum/minimum applied fields. However, after pulse stressing of the film for more than 1000 cycles, the domain switching speed is accelerated, where domain switching current overlaps with the initial capacitor charging current with a well-defined coercive field independent of the applied-field strength. Finally, we simulated the whole domain switching current transients with the assumption of the resistance degradation across interfacial passive layers between the film and electrodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Study of resistive switching and magnetism modulation in the Pt/CoFe{sub 2}O{sub 4}/Nb:SrTiO{sub 3} heterostructures

CoFe{sub 2}O{sub 4} (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO{sub 3} (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These heterostructures exhibit typical bipolar resistive switching effect with maximum switching ratio of 5 × 10{sup 4}, multi-level resistance states, excellent retention, and anti-fatigue properties. When the resistance states of the heterostructures are switched between low resistance state and high resistance state upon applying bias voltages, the saturation magnetization of the CFO films shows corresponding changes associated with the resistive switching. These close correlations between the resistive switching and the magnetization can be attributed to the electrons filling into and releasing from the defect energy levels introduced by oxygen vacancies in the CFO film. These results show potential application in the multi-functional magnetoelectric sensor and non-volatile multi-level resistive switching memory.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Sub-gigahertz beam switching of vertical-cavity surface-emitting laser with transverse coupled cavity

We report a high-speed electrical beam switching of vertical cavity surface emitting laser with a transverse coupled cavity. A high speed (sub-gigahertz) and large deflection angle (>30°) beam switching is demonstrated by employing the transverse mode switching. The angular switching speed of 900 MHz is achieved with narrow beam divergence of below 4° and extinction ratio of 8 dB. We also measured the near- and far-field patterns to clarify the origin of the beam switching. We present a simple one-dimensional Bragg reflector waveguide model, which well predicts the beam switching characteristic.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Spin-orbit torque induced magnetization switching in Ta/Co{sub 20}Fe{sub 60}B{sub 20}/MgO structures under small in-plane magnetic fields

Spin-orbit torque (SOT)-induced magnetization switching under small in-plane magnetic fields in as-deposited and annealed Ta/CoFeB/MgO structures is studied. For the as-deposited samples, partial SOT-induced switching behavior is observed under an in-plane field of less than 100 Oe. Conversely, for the annealed samples, an in-plane field of 10 Oe is large enough to achieve full deterministic magnetization switching. The Dzyaloshinskii-Moriya interaction at the Ta/CoFeB interface is believed to be the main reason for the discrepancy of the requisite in-plane magnetic fields for switching in the as-deposited and annealed samples. In addition, asymmetric field dependence behavior of SOT-induced magnetization switching is observed in the annealed samples. Deterministic magnetization switching in the absence of an external magnetic field is obtained in the annealed samples, which is extremely important to develop SOT-based magnetoresistive random access memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Engineering the switching dynamics of TiO{sub x}-based RRAM with Al doping

Titanium oxide (TiO{sub x}) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiO{sub x} thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Magnonic interferometric switch for multi-valued logic circuits

We investigated a possible use of the magnonic interferometric switches in multi-valued logic circuits. The switch is a three-terminal device consisting of two spin channels where input, control, and output signals are spin waves. Signal modulation is achieved via the interference between the source and gate spin waves. We report experimental data on a micrometer scale prototype based on the Y 3 Fe 2 (FeO 4 ) 3 structure. The output characteristics are measured at different angles of the bias magnetic field. The On/Off ratio of the prototype exceeds 13 dB at room temperature. Experimental data are complemented by the theoretical analysis and the results of micro magnetic simulations showing spin wave propagation in a micrometer size magnetic junction. Here, we also present the results of numerical modeling illustrating the operation of a nanometer-size switch consisting of just 20 spins in the source-drain channel. The utilization of spin wave interference as a switching mechanism makes it possible to build nanometer-scale logic gates, and minimize energy per operation, which is limited only by the noise margin. The utilization of phase in addition to amplitude for information encoding offers an innovative route towards multi-state logic circuits. We describe possible implementation of the three-value logic circuits based on the magnonic interferometric switches. The advantages and shortcomings inherent in interferometric switches are also discussed.

42 ENGINEERING↗
DOE OSTI2019

Understanding the switching mechanism of interfacial phase change memory

Phase Change Memory (PCM) is a top candidate for next generation data storage, but it typically suffers from high switching (RESET) current density (20–30 MA/cm 2 ). Interfacial Phase Change Memory (IPCM) is a type of PCM using multilayers of Sb 2 Te 3 /GeTe, with up to 100× lower reported RESET current compared to the standard Ge 2 Sb 2 Te 5 -based PCM. Several hypotheses involving fundamentally new switching mechanisms have been proposed to explain the low switching current densities, but consensus is lacking. Here, we investigate IPCM switching by analyzing its thermal, electrical, and fabrication dependencies. First, we measure the effective thermal conductivity (~0.4 W m -1 K -1 ) and thermal boundary resistance (~3.4 m 2 K GW -1 ) of Sb 2 Te 3 /GeTe multilayers. Simulations show that IPCM thermal properties account only for an ~13% reduction of current vs standard PCM and cannot explain previously reported results. Interestingly, electrical measurements reveal that our IPCM RESET indeed occurs by a melt-quench process, similar to PCM. Finally, we find that high deposition temperature causes defects including surface roughness and voids within the multilayer films. Thus, the substantial RESET current reduction of IPCM appears to be caused by voids within the multilayers, which migrate to the bottom electrode interface by thermophoresis, reducing the effective contact area. These results shed light on the IPCM switching mechanism, indicating that an improved control of layer deposition is necessary to obtain reliable switching.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Strongly heat-assisted spin–orbit torque switching of a ferrimagnetic insulator

Ferrimagnetic insulators promise low-power and high-speed spintronic applications, thanks to their insulating nature and fast dynamics near compensation points. In a ferrimagnetic insulator/heavy metal heterostructure, we investigate field- and current-induced magnetization switching at various temperatures and observe distinct magnetization switching behaviors owing to spin-orbit torque (SOT) and heating effect. We have realized SOT switching across the magnetization compensation temperature and discovered that the SOT switching is strongly heat-assisted: the temperature is always above the compensation temperature while the SOT switching happens in our case. Moreover, we show that the SOT efficiency is strongly magnetization-dependent by characterizing the current dependence of SOT efficiency and explaining the anomalous SOT switching back phenomena in the presence of a titled external field. Our results reveal the critical role of Joule heating on the dynamics of magnetic insulators and pave the way for the application of spintronic devices based on magnetic insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Collective Thomson scattering measurement of plasma evolution during the current pulse in a laser-triggered switch

High-voltage laser-triggered switches (HV-LTSs) are used in pulsed-power applications where low jitter and precise timing are required. The switches allow operation in the megaampere, megavolt regime while maintaining low insertion losses. Currently, there is a lack of detailed plasma measurements in these switches, yet such measurements are needed to elucidate the detailed physics, which include a range of processes such as laser breakdown, streamer formation and growth, current flow, plasma evolution, and cooling. Detailed spatially- and temporally resolved measurements of plasma properties within the switches could contribute to validating and advancing numeric models of these systems. This contribution presents laser Thomson scattering measurements of the electron number density and temperature evolution in a HV-LTS. The switch was operated at 6 kV with current flow for a duration of 145 ns and a peak current density of 0.2 MA/cm2 into a matched load. The Thomson scattering diagnostic system uses a 532 nm probe from an Nd:YAG laser allowing a temporal resolution of ∼10 ns. We find that during the switch current pulse, the plasma electron temperature rose from a starting value of 8.1 ± 1.6 eV (due to cooling of the earlier trigger laser plasma) to a peak value of 26 ± 5 eV with an associated increase in the electron density from 8.6 ± 1.7 × 1017 to 3.1 ± 0.6 × 1018 cm−3.

Gottfried, Jacob A. (ORCID:0000000290058841)↗
DOE OSTI2014

Effectiveness of BaTiO 3 dielectric patches on YBa 2 Cu 3 O 7 thin films for MEM switches

A micro-electro-mechanical (MEM) switch built on a superconducting microstrip filter will be utilized to investigate BaTiO 3 dielectric patches for functional switching points of contact. Actuation voltage resulting from the MEM switch provokes static friction between the bridge membrane and BaTiO 3 insulation layer. Furthermore, the dielectric patch crystal structure and roughness affect the ability of repetitively switching cycles and lifetime. We performed a series of experiments using different deposition methods and RF magnetron sputtering was found to be the best deposition process for the BaTiO 3 layer. The effect examination of surface morphology will be presented using characterization techniques as x-ray diffraction, SEM and AFM for an optimum switching device. The thin film is made of YBa 2 Cu 3 O 7 deposited on LaAlO 3 substrate by pulsed laser deposition. In our work, the dielectric material sputtering pressure is set at 9.5x10 -6 Torr. The argon gas is released through a mass-flow controller to purge the system prior to deposition. RF power is 85 W at a distance of 9 cm. The behavior of Au membranes built on ultimate BaTiO 3 patches will be shown as part of the results. These novel surface patterns will in turn be used in modelling other RF MEM switch devices such as distributed-satellite communication system operating at cryogenic temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Tip-based proximity ferroelectric switching and piezoelectric response in wurtzite multilayers

Proximity ferroelectricity is a paradigm for inducing ferroelectricity when a nonferroelectric polar material (such as Al⁢ N), which is unswitchable with an external field below the dielectric breakdown field, becomes a practically switchable ferroelectric in direct contact with a thin switchable ferroelectric layer (such as Al 1−𝑥 ⁢Sc 𝑥 ⁢N). Here, we develop a Landau-Ginzburg-Devonshire approach to study the proximity effect of local piezoelectric response and polarization reversal in wurtzite ferroelectric multilayers under a sharp electrically biased tip. Using finite-element modeling, we analyze the probe-induced nucleation of nanodomains, the features of local polarization hysteresis loops and coercive fields in the Al 1−𝑥 ⁢Sc 𝑥 ⁢N/Al⁢ N bilayers and three-layers. Similar to the wurtzite multilayers sandwiched between two parallel electrodes, the regimes of “proximity switching” (when all layers collectively switch) and the regime of “proximity suppression” (when they collectively do not switch) are the only two possible regimes in the probe-electrode geometry. However, the parameters and asymmetry of the local piezoresponse and polarization hysteresis loops depend significantly on the sequence of the layers with respect to the probe. The physical mechanism of proximity ferroelectricity in the local probe geometry is a depolarizing electric field determined by the polarization of the layers and their relative thickness. The field, whose direction is opposite to the polarization vector in the layer(s) with the larger spontaneous polarization (such as Al⁢ N), renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier in the “otherwise unswitchable” polar layers. Tip-based control of domains in otherwise nonferroelectric layers using proximity ferroelectricity can provide nanoscale control of domain reversal in memory, actuation, sensing, and optical applications. The ability of the tip-induced proximity switching to differentially switch multilayers, based on the order of the layers, provides a powerful tool for selective domain engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2018

High precision gate signal timing control based active voltage balancing scheme for series-connected fast switching field-effect transistors

Due to the low availability, high cost, and limited performance of high voltage power devices in high voltage high power applications, series-connection of low voltage switches is commonly considered. Practically, because of the dynamic voltage unbalance and the resultant reliability issue, switches in series-connection are not popular, especially for fast switching field-effect transistors such as silicon (Si) super junction MOSFETs, silicon carbide (SiC) JFETs, SiC MOSFETs, and gallium nitride (GaN) HEMTs, since their switching performance is highly sensitive to gate control, circuit parasitics, and device parameters. In the end, slight mismatch can introduce severe unbalanced voltage. This paper proposes an active voltage balancing scheme, including 1) tunable gate signal timing unit between series-connected switches with <; 1 ns precision resolution by utilizing a high resolution pulse-width modulator (HRPWM) which has existed in micro-controllers; and 2) online voltage unbalance monitor unit integrated with the gate drive as the feedback. Based on the latest generation 600-V Si CoolMOS, experimental results show that the dynamic voltage can be automatically well balanced in a wide range of operating conditions, and more importantly, the proposed scheme has no penalty for high-speed switching.

Zhang, Zheyu↗
DOE OSTI2020

Tunnel-FET Switching Is Governed by Non-Lorentzian Spectral Line Shape

In tunnel field-effect transistors (tFETs), the preferred mechanism for switching occurs by alignment (on) or misalignment (off) of two energy levels or band edges. Unfortunately, energy levels are never perfectly sharp. When a quantum dot interacts with a wire, its energy is broadened. Its actual spectral shape controls the current/voltage response of such transistor switches, from on (aligned) to off (misaligned). The most common model of spectral line shape is the Lorentzian, which falls off as reciprocal energy offset squared. Unfortunately, this is too slow a turnoff, algebraically, to be useful as a transistor switch. Electronic switches generally demand an on/off ratio of at least a million. Steep exponentially falling spectral tails would be needed for rapid off-state switching. This requires a new electronic feature, not previously recognized: narrowband, heavy-effective mass, quantum wire electrical contacts, to the tunneling quantum states. These are a necessity for spectrally sharp switching.

42 ENGINEERING↗