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At least 271 records · Page 15

Development of a plan for automating integrated circuit processing

The operations analysis and equipment evaluations pertinent to the design of an automated production facility capable of manufacturing beam-lead CMOS integrated circuits are reported. The overall plan shows approximate cost of major equipment, production rate and performance capability, flexibility, and special maintenance requirements. Direct computer control is compared with supervisory-mode operations. The plan is limited to wafer processing operations from the starting wafer to the finished beam-lead die after separation etching. The work already accomplished in implementing various automation schemes, and the type of equipment which can be found for instant automation are described. The plan is general, so that small shops or large production units can perhaps benefit. Examples of major types of automated processing machines are shown to illustrate the general concepts of automated wafer processing.

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Modular hardware synthesis using an HDL

Although hardware description languages (HDL) are becoming more and more necessary to automated design systems, their application is complicated due to the difficulty in translating the HDL description into an implementable format, nonfamiliarity of hardware designers with high-level language programming, nonuniform design methodologies and the time and costs involved in transfering HDL design software. Digital design language (DDL) suffers from all of the above problems and in addition can only by synthesized on a complete system and not on its subparts, making it unsuitable for synthesis using standard modules or prefabricated chips such as those required in LSI or VLSI circuits. The present paper presents a method by which the DDL translator can be made to generate modular equations that will allow the system to be synthesized as an interconnection of lower-level modules. The method involves the introduction of a new language construct called a Module which provides for the separate translation of all equations bounded by it.

Covington, J. A.↗

Solar flare perturbations in stratospheric current systems

Electric field, conductivity, and ionization rate data were collected on two balloon payloads at 26 km in the southern hemisphere stratosphere during the solar flare of Feb. 16, 1984. Both polarities of the conductivity were enhanced by a factor of two at a payload with an invariant latitude (Lambda) of -56.3 deg (rigidity = 1.4GV). At the same time no transient effects were seen in any of these parameters by a more equatorially located payload at Lambda = -48.8 deg (rigidity = 2.8 GV). The two payloads were separated by 5 hours of local time. The vertical current density, J(z), at the poleward most payload was enhanced by over a factor of two, while no J(z) variations were seen for the equatorward payload. Interpretation of these observations suggests that a simple RC time constant analysis of the global circuit may be incorrect.

Holzworth, R. H.↗

Design, fabrication, and evaluation of charge-coupled devices with aluminum-anodized-aluminum gates

A 4-phase, 49 1/2 bit CCD shift register was designed and fabricated using two levels of aluminum metallization with anodic Al2O3 insulation separating the layers. Test circuitry was also designed and constructed. A numerical analysis of an MOS-RC transmission line was made and results are given to characterize performance for various conductivities. The electrical design of the CCD included a low-noise dual-gate input and a balanced floating diffusion output circuit. Metallization was accomplished both by low voltage DC sputtering and thermal evaporation. The audization was according to published procedures using a buffered tartaric acid bath. Approximately 20 wafers were processed with 50 complete chips per wafer. All devices failed by shorting between the metal levels at some point. Experimental procedures eliminated temperature effects from sintering and drying, anodic oxide thickness, edge effects, photoresist stripping procedures, and metallization techniques as the primary causes of failure. It was believed from a study of SEM images that protuberances (hillocks) grow up from the first level metal through the oxide either causing a direct short or producing a weak, highly stressed insulation point which fails at low voltage. The cause of these hillocks is unknown; however, they have been observed to grow during temperature excursions to 470 C.

Gassaway, J. D.↗

Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

Burns, M. J.↗

High-Power AlGaAs Quantum-Well Lasers On Si Substrates

AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.

Kim, Jae-Hoon↗

Global circuit variability from multiple stratospheric electrical measurements

The vertical component of the electric field, conductivity, and the derived current density from eight superpressure balloons are examined. Special emphasis was placed on the fair-weather, simultaneous measurements from widely spaced constant-altitude (26 km) balloons. The conductivity measurements were well organized by a simple ionization rate parameterization depending on the geomagnetic latitude. The variability of all the electrical parameters was found to be independent of the balloon separation. Much of the time the current density measurements were within 20 percent, for simultaneous flights, even though the balloons were up to 6000 km apart. Also, these simultaneous current density data show that the global current source was significantly variable on hourly and daily time scales. Finally, the use of the simultaneous current density data is discussed as a possible 'geoelectric index'. Advantages and limitations of such an index are discussed.

Norville, Kent↗

Capacity retention in hydrogen storage alloys

Results of our examination of the properties of several candidate materials for hydrogen storage electrodes and their relation to the decrease in H-storage capacity upon open-circuit storage over time are reported. In some of the alloy samples examined to date, only about 10 percent of the hydrogen capacity was lost upon storage for 20 days, while in others, this number was as high as 30 percent for the same period of time. This loss in capacity is attributed to two separate mechanisms: (1) hydrogen desorbed from the electrode due to pressure differences between the cell and the electrode sample; and (2) chemical and/or electrochemical degradation of the alloy electrode upon exposure to the cell environment. The former process is a direct consequence of the equilibrium dissociation pressure of the hydride alloy phase and the partial pressure of hydrogen in the hydride phase in equilibrium with that in the electrolyte environment, while the latter is related to the stability of the alloy phase in the cell environment. Comparison of the equilibrium gas-phase dissociation pressures of these alloys indicate that reversible loss of hydrogen capacity is higher in alloys with P(eqm) greater than 1 atm than in those with P(eqm) less than 1 atm.

Anani, A.↗

NASA Tech Briefs, April 2004

Topics covered include: Analysis of SSEM Sensor Data Using BEAM; Hairlike Percutaneous Photochemical Sensors; Video Guidance Sensors Using Remotely Activated Targets; Simulating Remote Sensing Systems; EHW Approach to Temperature Compensation of Electronics; Polymorphic Electronic Circuits; Micro-Tubular Fuel Cells; Whispering-Gallery-Mode Tunable Narrow-Band-Pass Filter; PVM Wrapper; Simulation of Hyperspectral Images; Algorithm for Controlling a Centrifugal Compressor; Hybrid Inflatable Pressure Vessel; Double-Acting, Locking Carabiners; Position Sensor Integral with a Linear Actuator; Improved Electromagnetic Brake; Flow Straightener for a Rotating-Drum Liquid Separator; Sensory-Feedback Exoskeletal Arm Controller; Active Suppression of Instabilities in Engine Combustors; Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs; Chemical Thinning Process for Fabricating UV-Imaging CCDs; Pseudoslit Spectrometer; Waste-Heat-Driven Cooling Using Complex Compound Sorbents; Improved Refractometer for Measuring Temperatures of Drops; Semiconductor Lasers Containing Quantum Wells in Junctions; Phytoplankton-Fluorescence-Lifetime Vertical Profiler; Hexagonal Pixels and Indexing Scheme for Binary Images; Finding Minimum-Power Broadcast Trees for Wireless Networks; and Automation of Design Engineering Processes.

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Application of diffusion bonding to electronic interconnection of flatpack leads

Diffusion-bonded joints between gold-plated Kovar leads and indium-plated copper circuit pads offer some advantages for electronic circuit packaging. Test results show that consistent high strength bonds stronger than the copper circuit foil are achieved by parallel-gap bonding at relatively low power settings. The bonds are basically formed by the alloying of the gold, indium and copper at the bond interface. Other low melting metals such as tin can also be used; however, tin does not offer the ease of bonding that results in consistent separation of the copper foil during pull testing. The investigation was conducted in three parts consisting of: (1) an evaluation of the physical strength of resulting bonds at ambient and elevated temperature, (2) a metallurgical analysis of bonds using scanning electron microscopy and nondispersive X-ray analysis, and (3) evaluation and development of various schemes for multiple lead flatpack bonding.

Korb, R. W.↗

Multi-wavelength time-coincident optical communications system and methods thereof

An optical communications transmitter includes a oscillator source, producing a clock signal, a data source, producing a data signal, a modulating circuit for modulating the clock signal using the data signal to produce modulating signals, optical drivers, receiving the modulating signals and producing optical driving signals based on the modulating signals and optical emitters, producing small numbers of photons based on the optical driving signals. The small numbers of photons are time-correlated between at least two separate optical transmission wavelengths and quantum states and the small number of photons can be detected by a receiver to reform the data signal.

Lekki, John↗

Power-Amplifier Module for 145 to 165 GHz

A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.

Samoska, Lorene↗

Jig For Stereoscopic Photography

Separations between views adjusted precisely for best results. Simple jig adjusted to set precisely, distance between right and left positions of camera used to make stereoscopic photographs. Camera slides in slot between extreme positions, where it takes stereoscopic pictures. Distance between extreme positions set reproducibly with micrometer. In view of trend toward very-large-scale integration of electronic circuits, training method and jig used to make training photographs useful to many companies to reduce cost of training manufacturing personnel.

Nielsen, David J.↗

Low power, compact charge coupled device signal processing system

A variety of charged coupled devices (CCDs) for performing programmable correlation for preprocessing environmental sensor data preparatory to its transmission to the ground were developed. A total of two separate ICs were developed and a third was evaluated. The first IC was a CCD chirp z transform IC capable of performing a 32 point DFT at frequencies to 1 MHz. All on chip circuitry operated as designed with the exception of the limited dynamic range caused by a fixed pattern noise due to interactions between the digital and analog circuits. The second IC developed was a 64 stage CCD analog/analog correlator for performing time domain correlation. Multiplier errors were found to be less than 1 percent at designed signal levels and less than 0.3 percent at the measured smaller levels. A prototype IC for performing time domain correlation was also evaluated.

Bosshart, P. W.↗

Relative Navigation for Formation Flying of Spacecraft

This paper presents a robust and efficient approach for relative navigation and attitude estimation of spacecraft flying in formation. This approach uses measurements from a new optical sensor that provides a line of sight vector from the master spacecraft to the secondary satellite. The overall system provides a novel, reliable, and autonomous relative navigation and attitude determination system, employing relatively simple electronic circuits with modest digital signal processing requirements and is fully independent of any external systems. Experimental calibration results are presented, which are used to achieve accurate line of sight measurements. State estimation for formation flying is achieved through an optimal observer design. Also, because the rotational and translational motions are coupled through the observation vectors, three approaches are suggested to separate both signals just for stability analysis. Simulation and experimental results indicate that the combined sensor/estimator approach provides accurate relative position and attitude estimates.

Alonso, Roberto↗

Transition-Edge Hot-Electron Microbolometers for Millimeter and Submillimeter Astrophysics

The millimeter and the submillimeter wavelengths of the electromagnetic spectrum hold a wealth of information about the evolution of the universe. In particular, cosmic microwave background (CMB) radiation and its polarization carry the oldest information in the universe, and provide the best test of the inflationary paradigm available to astronomy today. Detecting gravity waves through their imprint on the CMB polarization would have extraordinary repercussions for cosmology and physics. A transition-edge hot-electron micro - bolometer (THM) consists of a superconducting bilayer transition-edge sensor (TES) with a thin-film absorber. Unlike traditional monolithic bolometers that make use of micromachined structures, the THM em ploys the decoupling between electrons and phonons at millikelvin temperatures to provide thermal isolation. The devices are fabricated photolithographically and are easily integrated with antennas via microstrip transmission lines, and with SQUID (superconducting quantum interference device) readouts. The small volume of the absorber and TES produces a short thermal time constant that facilitates rapid sky scanning. The THM consists of a thin-film metal absorber overlapping a superconducting TES. The absorber forms the termination of a superconducting microstripline that carries RF power from an antenna. The purpose of forming a separate absorber and TES is to allow flexibility in the optimization of the two components. In particular, the absorbing film's impedance can be chosen to match the antenna, while the TES impedance can be chosen to match to the readout SQUID amplifier. This scheme combines the advantages of the TES with the advantages of planar millimeter-wave transmission line circuits. Antenna-coupling to the detectors via planar transmission lines allows the detector dimensions to be much smaller than a wavelength, so the technique can be extended across the entire microwave, millimeter, and submillimeter wavelength ranges. The circuits are fabricated using standard microlithographic techniques and are compatible with uniform, large array formats. Unlike traditional monolithic bolometers that make use of micromachined structures, the THM employs the decoupling between electrons and phonons at millikelvin temperatures to provide thermal isolation. There is no fragile membrane in the structure for thermal isolation, which improves the fabrication yield.

Hsieh, Wen-Ting↗

Investigation and evaluation of shuttle/GPS navigation system

Iterative procedures were used to analyze the performance of two preliminary shuttle/GPS navigation system configurations: an early OFT experimental system and a more sophisticated system which consolidates several separate navigation functions thus permitting net cost savings from decreased shuttle avionics weight and power consumption, and from reduced ground data processing. The GPS system can provide on-orbit navigation accuracy an order of magnitude better than the baseline system, with very adequate link margins. The worst-case link margin is 4.3 dB. This link margin accounts for shuttle RF circuit losses which were minimized under the constraints of program schedule and environmental limitations. Implicit in the link analyses are the location trade-offs for preamplifiers and antennas.

Nilsen, P. W.↗

Optically broadcasting wind direction indicator

An optically broadcasting wind direction indicator generates flashes of light which are separated by a time interval that is directly proportional to the angle of the wind direction relative to a fixed direction, such as north. An angle/voltage transducer generates a voltage that is proportional to the wind direction relative to the fixed direction, and this voltage is employed by timing circuitry or a microprocessor that generates pulses for actuating a light source trigger circuit first at the start of the time interval, and then at the end of the time interval. To aid an observer in distinguishing between the beginning and end of the interval, two stop flashes can be provided in quick succession. The time scale is preferably chosen so that each second of the time interval corresponds to 30 deg of direction relative to north. In this manner, an observer can easily correlate the measured time interval to the wind direction by visualizing the numbers on a conventional clock face, each of which correspond to one second of time and 30 deg of angle.

Zysko, Jan A.↗