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Laser Development for Interferometry in Space
We are developing a laser (master oscillator) and optical amplifier for interferometric space missions, including the gravitational-wave missions NGO and OpTIIX experiment on the international space station. Our system is based on optical fiber and semiconductor laser technologies, which have evolved dramatically in the past decade. We will report on the latest status of the development work, including noise measurements and space qualification tests.
High resolution atmospheric spectroscopy using a diode laser heterodyne spectrometer
Ultrahigh resolution (0.007 per cm) atmospheric solar absorption spectra that have been obtained from a tunable infrared heterodyne radiometer are discussed. The radiometer was developed for ground based observations in the 8-12 micron region, and tunability is achieved through the use of Pb-salt semiconductor laser local oscillators. Spectra have been obtained in a piecewise fashion from 9.1 to 11.1 microns using laser emission modes that exhibit characteristics suitable for local-oscillator operation. Spectra showing absorption features of HNO3, O3, CO2, and H2O are presented along with comparisons of experimental and synthetic spectra calculated using a line-by-line atmospheric transmission model.
Coherent communication link using diode-pumped lasers
Work toward developing a diffraction limited, single frequency, modulated transmitter suitable for coherent optical communication or direct detection communication is discussed. Diode pumped, monolithic Nd:YAG nonplanar ring oscillators were used as the carrier beam. An external modulation technique which can handle high optical powers, has moderate modulation voltage, and which can reach modulation rates of 1 GHz was invented. Semiconductor laser pumped solid-state lasers which have high output power (0.5 Watt) and which oscillate at a single frequency, in a diffraction limited beam, at the wavelength of 1.06 microns were built. A technique for phase modulating the laser output by 180 degrees with a 40-volt peak to peak driving voltage is demonstrated. This technique can be adapted for amplitude modulation of 100 percent with the same voltage. This technique makes use of a resonant bulk modulator, so it does not have the power handling limitations of guided wave modulators.
High-resolution atmospheric spectroscopy using a diode laser heterodyne spectrometer
A tunable-diode-laser radiometer with a spectral resolution of 0.007/cm was used to obtain IR solar absorption spectra in the 9.1-11.1 micron region. Spectra exhibiting absorption by HNO3, CO2, O3, and H2O were obtained in a piecewise manner using emission modes from a single Pb-salt laser local oscillator. The measured spectra were compared to synthetic atmospheric spectra calculated using a line-by-line model. The results demonstrate that high-resolution IR solar absorption spectroscopy and atmospheric extinction measurements can be routinely performed over wide spectral regions using semiconductor lasers.
Stationary Plasma Thruster Ion Velocity Distribution
A nonintrusive velocity diagnostic based on laser induced fluorescence of the 5d4F(5/2)-6p4D(5/2) singly ionized xenon transition was used to interrogate the exhaust of a 1.5 kW Stationary Plasma Thruster (SPT). A detailed map of plume velocity vectors was obtained using a simplified, cost-effective, nonintrusive, semiconductor laser based scheme. Circumferential velocities on the order of 250 m/s were measured which implied induced momentum torques of approximately 5 x 10(exp -2) N-cm. Axial and radial velocities were evaluated one mm downstream of the cathode at several locations across the width of the annular acceleration channel. Radial velocities varied linearly with radial distance. A maximum radial velocity of 7500 m/s was measured 8 mm from the center of the channel. Axial velocities as large as 16,500 m/s were measured.
Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers
Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.
Vapor phase growth technique of III-V compounds utilizing a preheating step
In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.
Turnkey locking of quantum-dot lasers directly grown on Si
Ultralow-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce the system size, weight, power consumption and cost. Semiconductor lasers based on self-injection locking have achieved fibre laser coherence, but typically require a high-quality-factor external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking are a low-cost and turnkey operation option, but their coherence is generally inferior to self-injection locking lasers. In this work, we demonstrate quantum-dot lasers grown directly on Si that achieve self-injection-locking laser coherence under turnkey external-cavity locking. The high-performance quantum-dot laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the chaos-free nature of the quantum-dot laser enables a 16 Hz Lorentzian linewidth under external-cavity locking using a low-quality-factor external cavity, and improves the frequency noise by an additional order of magnitude compared with conventional quantum-well lasers.
Tuning a Tetrahertz Wire Laser
Tunable terahertz lasers are desirable in applications in sensing and spectroscopy because many biochemical species have strong spectral fingerprints at terahertz frequencies. Conventionally, the frequency of a laser is tuned in a similar manner to a stringed musical instrument, in which pitch is varied by changing the length of the string (the longitudinal component of the wave vector) and/ or its tension (the refractive index). However, such methods are difficult to implement in terahertz semiconductor lasers because of their poor outcoupling efficiencies. Here, we demonstrate a novel tuning mechanism based on a unique 'wire laser' device for which the transverse dimension w is much much less than lambda. Placing a movable object close to the wire laser manipulates a large fraction of the waveguided mode propagating outside the cavity, thereby tuning its resonant frequency. Continuous single-mode redshift and blueshift tuning is demonstrated for the same device by using either a dielectric or metallic movable object. In combination, this enables a frequency tuning of approximately equal to 137 GHz (3.6%) from a single laser device at approximately equal to 3.8 THz.
Computational Modeling of Vertical-Cavity Surface-Emitting Lasers
Vertical-Cavity Surface-Emitting Lasers (VCSELs) have become increasingly important for many applications, such as optical interconnects and optical data storages. In many applications, critical requirements are very often high beam quality and/or high output powers. To help the design and optimization of VCSELs for such applications, it is essential to have a simulation model that includes the time evolution of the transverse space dependence of the hewn. Such models allow arbitrary transverse profiles of laser intensity or carrier density to develop in time without any a priori assumption about the number and types of transverse modes. In addition, extensive research in the past has shown that many-body effects are important in influencing the optical gain and the refractive index of semiconductor quantum wells. It is thus important to include the key many-body effects in simulation models for semiconductor lasers. A computational model, called the Maxwell-Effective Bloch Equations (MEBE) was developed recently that simulates the above features and effects. This model combines the space-time resolution with microscopic many-body effects in a way that is both accurate enough and computationally manageable. This model has been used to simulate edge-emitting high power lasers recently. A new finite-difference algorithm has been developed for solving these equations and will be shown in the presentation. That algorithm will be used to calculate the detailed time evolution of the transverse mode profiles of VCSELs. The VCSELs are based on InGaAs/GaAs quantum well structures. Effects of pumping current and refractive index profiles will be investigated in detail. The simulation results will be compared with other results the use the rate-equation model.
Computational Nonlinear of Vertical-Cavity Surface-Emitting Lasers
Vertical-Cavity Surface-Emitting Lasers (VCSELs) have become increasingly important for many applications, such as optical interconnects and optical data storages. In many applications, critical requirements are very often high beam quality and/or high output powers. To help the design and optimization of VCSELs for such applications, it is essential to have a simulation model that includes the time evolution of the transverse space dependence of the beam. Such models allow arbitrary transverse profiles of laser intensity or carrier density to develop in time without any a priori assumption about the number and types of transverse modes. In addition, extensive research in the past has shown that many-body effects are important in influencing the optical gain and the refractive index of semiconductor quantum wells. It is thus important to include the key many-body effects in simulation models for semiconductor lasers. A computational model, called the Maxwell-Effective Bloch Equations (MEBE) was developed recently that simulates the above features and effects. This model combines the space-time resolution with microscopic many-body effects in a way that is both accurate enough and computationally manageable. This model has been used to simulate edge-emitting high power lasers recently. A new finite-difference algorithm has been developed for solving these equations and will be shown in the presentation. That algorithm will be used to calculate the detailed time evolution of the transverse mode profiles of VCSELs. The VCSELs are based on InGaAs/GaAs quantum well structures. Effects of pumping current and refractive index profiles will be investigated in detail. The simulation results will be compared with other results the use the rate-equation model.
Qualification of a Multi-Channel Infrared Laser Absorption Spectrometer for Monitoring CO, HCl, HCN, HF, and CO2 Aboard Manned Spacecraft
Monitoring of specific combustion products can provide early-warning detection of accidental fires aboard manned spacecraft and also identify the source and severity of combustion events. Furthermore, quantitative in situ measurements are important for gauging levels of exposure to hazardous gases, particularly on long-duration missions where analysis of returned samples becomes impractical. Absorption spectroscopy using tunable laser sources in the 2 to 5 micrometer wavelength range enables accurate, unambiguous detection of CO, HCl, HCN, HF, and CO2, which are produced in varying amounts through the heating of electrical components and packaging materials commonly used aboard spacecraft. Here, we report on calibration and testing of a five-channel laser absorption spectrometer designed to accurately monitor ambient gas-phase concentrations of these five compounds, with low-level detection limits based on the Spacecraft Maximum Allowable Concentrations. The instrument employs a two-pass absorption cell with a total optical pathlength of 50 cm and a dedicated infrared semiconductor laser source for each target gas. We present results from testing the five-channel sensor in the presence of trace concentrations of the target compounds that were introduced using both gas sources and oxidative pyrolysis (non-flaming combustion) of solid material mixtures.
Engineered current-density profile diode laser
The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.
Engineered current-density profile diode laser
The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.
Phase-Locked Laser Array With Nonuniform Spacing
To obtain phase-locked array that reliably produces single far-field lobe, configuration includes lasing stripes not placed on regular centers but located in regular way with nonuniform centers (i.e., with spacing determined by some function). Alternatively, lasing stripes placed on set of periodic arrays with different stripe-to-stripe centers interlaced onto single chip or placed in structure in which stripe-to-stripe spacing is random or pseudorandom. Monolithic, phase-locked, semiconductor-laser array design produces output laser beam comprising substantially single lobe.
Receiver design, performance analysis, and evaluation for space-borne laser altimeters and space-to-space laser ranging systems
This Interim report consists of a manuscript, 'Receiver Design for Satellite to Satellite Laser Ranging Instrument,' and copies of two papers we co-authored, 'Demonstration of High Sensitivity Laser Ranging System' and 'Semiconductor Laser-Based Ranging Instrument for Earth Gravity Measurements. ' These two papers were presented at the conference Semiconductor Lasers, Advanced Devices and Applications, August 21 -23, 1995, Keystone Colorado. The manuscript is a draft in the preparation for publication, which summarizes the theory we developed on space-borne laser ranging instrument for gravity measurements.
Space Station Laser Communication Transceiver
NASA/Goddard Space Flight Center (GSFC) has initiated the development of experimental optical communication system which will be installed on Space Station Freedom. This system is part of the Space Station Attached a Payloads Program and is currently scheduled for a 1997 launch. The system is being designed to carry out comprehensive set of tests to evaluate and demonstrate the capabilities of this relatively new technology. Communication tests at rates up to 1200 mbps will be conducted over the space-to-ground link using an existing tracking facility at the GSFC. GaAlAs semiconductor lasers will be intensity modulated using 4 slot pulse position modulation format. Direct detection receivers using silicon avalanche photodiodes will be utilized, and 1 microradian accuracy pointing will be achieved with 2 cascaded pointing stages. Successful completion of this in-orbit test program should demonstrate both the technical maturity and readiness of this technology for follow-up operational missions.