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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Effects of the mode of storage on the capacity fading of the sintered nickel electrodes

A systematic investigation of the effect of temperature and two conditions of storage, shortened and open circuit, on the capacity fading of sintered nickel electrodes in NiCd batteries was conducted. All testing was done on sintered electrodes in flooded cells. Cycling tests to measure the capacity were performed at room temperature. The capacity out to one volt, a capacity useful for satellite applications. Test results indicated that: the shortened electrode showed a higher rate of loss than the open circuit electrodes; there was an increase in both modes with an increase in temperature; there was a loss of capacity with time of storage; a general degradation was observed as a function of time; shortened electrodes showed a higher end of charge than the open circuit ones; and at room temperature there was a lower loss in the open circuit electrode than in the shortened one.

Vyes, B.↗
NASA NTRS1982

Tribological properties of sintered polycrystalline and single crystal silicon carbide

Tribological studies and X-ray photoelectron spectroscopy analyses were conducted with sintered polycrystalline and single crystal silicon carbide surfaces in sliding contact with iron at various temperatures to 1500 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on both the friction properties and the surface chemistry of silicon carbide. The main contaminants on the as received sintered polycrystalline silicon carbide surfaces are adsorbed carbon, oxygen, graphite, and silicon dioxide. The surface revealed a low coefficient of friction. This is due to the presence of the graphite on the surface. At temperatures of 400 to 600 C graphite and copious amount of silicon dioxide were observed on the polycrystalline silicon carbide surface in addition to silicon carbide. At 800 C, the amount of the silicon dioxide decreased rapidly and the silicon carbide type silicon and carbon peaks were at a maximum intensity in the XPS spectra. The coefficients of friction were high in the temperature range 400 to 800 C. Small amounts of carbon and oxygen contaminants were observed on the as received single crystal silicon carbide surface below 250 C. Silicon carbide type silicon and carbon peaks were seen on the silicon carbide in addition to very small amount of graphite and silicon dioxide at temperatures of 450 to 800 C.

Miyoshi, K.↗
NASA NTRS1982

Fabrication of sinterable silicon nitride by injection molding

Transformation of structural ceramics from the laboratory to production requires development of near net shape fabrication techniques which minimize finish grinding. One potential technique for producing large quantities of complex-shaped parts at a low cost, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material. Binder selection methodology, compounding of ceramic and binder components, injection molding techniques, and problems in binder removal are discussed. Strength, oxidation resistance, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material.

Quackenbush, C. L.↗
NASA NTRS1984

Silicon carbide material sintered bodies manufacturing

A method is described for producing a high density silicon carbide sintering substance which contains aluminum oxide. The sintering is done in CO gas atmosphere, which is kept at 2 to 20 atmospheric pressures.

Suzuki, K.↗
NASA NTRS1983

Characteristics of Si3N4-SiO2-Ce2O3 compositions sintered in high-pressure nitrogen

Full-density Si3N4-SiO2-Ce2O3 compositions were prepared by sintering with 2.5 MPa nitrogen pressure at temperatures of 1900 and 2090 C. Room-temperature flexural strengths near 700 MPa for sintered material compared favorably with the strength of hot-pressed material. At 1370 C, where flexural strengths as high as 363 MPa were obtained, it was observed that the coarsest structure was the strongest and the finest structure was the weakest. One of the compositions tested, Si3N4-8.7 wt pct SiO2-8.3 wt pct-Ce2O3, was found to have excellent 200-h oxidation resistance at 700, 1000, and 1370 C, without incidence of 700 to 1000 C phase instability and cracking.

Sanders, W. A.↗
NASA NTRS1984

Sintered silicon nitride workpiece

A description is given of a sintering method for silicon nitride. A detailed explanation of the invention is presented. Four procedures for the sintering process are described.

Shinohara, N.↗
NASA NTRS1984

Silicon nitride sintered body

The sintering of silicon carbide and it production are described. The method of production is by calcination in which molding is followed by sintering without compression. The invention improves the composition of the silicon carbide ceramic. Six examples of the invention are illustrated and discussed.

Suzuki, K.↗
NASA NTRS1984

Radiographic detectability limits for seeded voids in sintered silicon carbide and silicon nitride

Conventional and microfocus X-radiographic techniques were compared to determine relative detectability limits for voids in green and sintered SiC and Si3N4. The relative sensitivity of the techniques was evaluated by comparing their ability to detect voids that were artificially introduced by a seeding process. For projection microfocus radiography the sensitivity of void detection at a 90/95 probability of detection/confidence level is 1.5% of specimen thickness in sintered SiC and Si3N4. For conventional contact radiography the sensitivity is 2.5% of specimen thickness. It appears that microfocus projection radiography is preferable to conventional contact radiography in cases where increased sensitivity is required and where the additional complexity of the technique can be tolerated.

Baaklini, G. Y.↗
NASA NTRS1984

Sintered silicon carbide molded body and method for its production

Sintered silicon carbide shapes are described. They are produced by using a composition containing an oxide of at least one element chosen from the group: Li, Be, Mg, Si, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Nb, Mo, Ba, Tc, Ta, W and Th as a supplement to known sintering aids.

Omori, M.↗
NASA NTRS1985

Reliability of two sintered silicon nitride materials

Two types of sintered silicon nitride were evaluated in terms of reliability: an experimental high pressure nitrogen sintered material and a commercial material. The results show wide variations in strength for both materials. The Weibull moduli were 5.5, 8.9, and 11 for the experimental material at room temperature, 1200, and 1370 C, respectively. The commercial material showed Weibull moduli of 9.0, 8.6, and 8.9 at these respective temperatures. No correlation between strength and flaw size was noted for the experimental material. The applicability of the Weibull and Griffith theories to processing defects on the order of 100 microns or less in size are discussed.

Mieskowski, D. M.↗
NASA NTRS1985

Removal of glass adhered to sintered ceramics in hot isostatic pressing

In the hot isostatic pressing of ceramic materials in molten glass using an inert gas as a pressing medium, glass adhered to the sintered ceramics is heated to convert it to a porous glass and removed. Thus, Si3N4 powder was compacted at 5000 kg/sq cm, coated with a 0.5 mm thick BN, embedded in Pyrex glass in a graphite crucible, put inside a hot isostatic press containing Argon, hot pressed at 1750 C and 100 kg/sq cm; cooled, taken out from the crucible, heated at 1100 C for 30 minutes, cooled, and then glass adhered to the sintered body was removed.

Source record↗
NASA NTRS1986

Correlation of processing and sintering variables with the strength and radiography of silicon nitride

A sintered Si3N4-SiO2-Y2O3 composition, NASA 6Y, was developed that reached four-point flexural average strength/standard deviation values of 857/36, 544/33, and 462/59 MPa at room temperature, 1200 and 1370 C respectively. These strengths represented improvements of 56, 38, and 21 percent over baseline properties at the three test temperatures. At room temperature the standard deviation was reduced by over a factor of three. These accomplishments were realized by the iterative utilization of conventional x-radiography to characterize structural (density) uniformity as affected by systematic changes in powder processing and sintering parameters. Accompanying the improvement in mechanical properties was a change in the type of flaw causing failure from a pore to a large columnar beta- Si3N4 grain typically 40 to 80 microns long, 10 to 30 microns wide, and with an aspect ratio of 5:1.

Sanders, W. A.↗
NASA NTRS1986

Radiographic detectability limits for seeded voids in sintered silicon carbide and silicon nitride

Conventional and microfocus X-radiographic techniques were compared to determine relative detectability limits for voids in green and sintered SiC and Si3N4. The relative sensitivity of the techniques was evaluated by comparing their ability to detect voids that were artificially introduced by a seeding process. For projection microfocus radiography the sensitivity of void detection at a 90/95 probability of detection/confidence level is 1.5 percent of specimen thickness in sintered SiC and Si3N4. For conventional contact radiography the sensitivity is 2.5 percent of specimen thickness. It appears that microfocus projection radiography is preferable to conventional contact radiography in cases where increased sensitivity is required and where the additional complexity of the technique can be tolerated.

Baaklini, G. Y.↗
NASA NTRS1986

Strength and microstructure of Si3N4 sintered with ZrO2 additions

Densities greater than 99 percent of theoretical were obtained with stabilized ZrO2 additions to Si3N4. Material sintered at 2140 C under 2.5 MPa nitrogen overpressure with 3.8, 9.9, and 13.4 wt pct ZrO2 had a predominantaly equiaxed grain size ranging from 0.2 to 7.0 microns. At 1370 C, the latter composition exhibited a flexural strength of about 487 MPa, equal to that of a finer-grain-size, hot-pressed Si3N4 + ZrO2 material having excellent high-temperature static fatigue properties. Transmission electron microscopy of the sintered Si3N4 revealed a glassy grain-boundary phase at all three ZrO2 levels and partially crystalline triple points for the 9.9 and 13.4 wt pct ZrO2-containing materials. Slow crack growth was observed for 1370 C flexure tests and correlated with nonlinear load deflection traces for stresses greater than 503 MPa. The crystallization of the grain-boundary glass is insterpreted as beneficial to the attainment of high (1370 C) flexural strength.

Sanders, W. A.↗
NASA NTRS1986

Correlation of processing and sintering variables with the strength and radiography of silicon nitride

A sintered Si3N4-SiO2-Y2O3 composition, NASA 6Y, was developed that reached four-point flexural average strength/standard deviation values of 857/36, 544/33, and 462/59 MPa at room temperature, 1200 and 1370 C, respectively. These strengths represented improvements of 56, 38, and 21 percent over baseline properties at the three test temperatures. At room temperature the standard deviation was reduced by over a factor of three. These accomplishments were realized by the iterative utilization of conventional X-radiography to characterize structural (density) uniformity as affected by systematic changes in powder processing and sintering parameters. Accompanying the improvement in mechanical properties was a change in the type of flaw causing failure from a pore to a large columnar beta-Si3N4 grain typically 40-80 micron long, 10-30 micron wide, and with an aspect ratio of 5:1.

Sanders, W. A.↗
NASA NTRS1988

Processing, texture and mechanical properties of sintered silicon carbide

With regard to its favorable properties, in particular those shown at high temperatures, silicon carbide is of great interest for applications related to the construction of engines and turbines. Thus, silicon carbide could replace heat-resisting alloys with the objective to achieve a further increase in operational temperature. The present investigation is concerned with approaches which can provide silicon carbide material with suitable properties for the intended applications, taking into account the relations between characteristics of the raw material, material composition, sinter conditions, and results of the sintering process. The effects of density and texture formation on the mechanical properties are studied. It is found that a dense material with a fine-grained microstructure provides optimal mechanical properties, while any deviation from this ideal condition can lead to a considerable deterioration with respect to the material properties.

Landfermann, H.↗
NASA NTRS1987

Gravitational contributions to microstructural coarsening in liquid phase sintering

Preliminary experiments for determining the role of gravity in liquid phase sintering have been carried out. Tungsten heavy alloys were selected for this investigation because of the large density difference between solid and liquid, extensive interest in the alloys and considerable data on these alloys. By identifying and isolating the role that gravity plays in shape distortion and microstructural coarsening, further insight into the mechanisms of coarsening kinetics may be realized. Improvements in mechanical properties, shape complexity, and dimensional stability may be realized in the future from low gravity sintering.

Kipphut, C. M.↗