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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Peculiarities of the Condensation of Silicon on the Surface of a Tungsten Single Crystal

Using the methods of the field emission microscopy, the condensation of Si on the W surface at various temperatures T of the substrate and numbers n of monatomic layers of the deposited condensate is studied. At low temperatures of T ~ 600 K, a low-temperature Si monolayer with the structure of pure W is formed on the surface, whereas another structure of a high-temperature monolayer, namely, surface silicide, is formed at T ≥ 1000 K. The low-temperature monolayer and surface silicide also differ in their orienting effect when constructing the Si layers. In the case of condensation on a low-temperature monolayer, crystallites of Si are formed starting already from the third monolayer at n ≥ 3, whereas the Si crystallites grow during the condensation on surface silicide starting from n ≥ 300 monolayers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2022

Vacuum Melt Infiltration of 2D Tyranno SA3® Ceramic Matrix Composites with Cr-25(wt.%)Si Intermetallic Alloy

The potential and limitations of vacuum melt infiltrating woven preforms of 2D Tyranno SA3 fibers with Cr-25(wt.%)Si alloy were investigated. Microstructural observations revealed that the volume fractions of open voids infiltrated by the molten metal varied between 3.7 and 10.0% irrespective of the magnitudes of the melt infiltration temperatures and hold times, which was attributed in part to substantial volatilization of the silicide charge based on computational thermodynamics. In the absence of experimental data, poor wettability of the melt could not be ruled out unambiguously. Other possible reasons are carefully examined and discarded. Ring microstructures were observed around the fibers mainly at the outer surfaces of the infiltrated preform, where the BN and chemical vapor infiltrated SiC coatings had vaporized in the high vacuum environment. In contrast, they were absent in the interior of the preform, where the coatings were still present with no evidence of molten metal attack of the coatings. Details of thermodynamic calculations are presented to confirm the volatilization of the BN and CVI SiC coatings thereby resulting in the ring microstructures due to the filling of voids by the molten silicide. It is concluded that successful melt infiltration of Tyranno SA3® with Cr-25%Si can be only achieved under sufficient positive pressure to prevent volatilization of the coatings and the molten silicide.

Cr-25%Si↗
DOE OSTI2018

Machining induced fissures in relation to microstructure of sintered U3Si2 fuel pellets

As uranium silicide (U3Si2) becomes a more desired fuel replacement for uranium dioxide in light water reactors, it is import to understand the fabrication process. Moreover, it is important to understand how the as-sintered microstructure of the fuel pellet affects the final product; uranium silicide fuel pellets are currently fabricated using a powder metallurgy process. Pellet quality and integrity is a concern as any unwanted defects may cause adverse irradiation behavior. Thus, pellets need to remain relatively free of defects (surface chipping, cracking, undesired microstructure, etc.) in order to be placed into a fuel assembly. Recently, it was observed that uranium silicide fuel pellets developed surface fissures on the machined surface after a centerless grinding process. Initial observations indicate a relation between microstructure and machining induced fissures; in essence, fissures on the machined surface are only observed in pellets containing a non-uniform texture (fine grains surrounding coarse grains). Experiments have been focused on determining the cause(s) of the non-uniform texture. Once the cause was determined and grain size was reproduced, samples with a coarse-grained microstructure, along with samples containing a fine-grained microstructure were centerless ground to confirm the relation between surface fissures and microstructure. Samples were also subjected to microscopic analysis, grain size analysis, and x-ray diffraction (XRD).

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Evaluation of Thermal Scattering Law for U 3 Si 2 Using Temperature-Dependent Phonon Density of States

The thermal scattering law for uranium silicide, a candidate material for high-density nuclear fuel, was evaluated from the temperature-dependent phonon density of states obtained using the quasi-harmonic approximation. For uranium silicide model systems of various volumes near the equilibrium volume, Hellmann-Feynman forces were calculated by performing ab initio lattice dynamics simulations based on density functional theory. Subsequently, the quasi-harmonic approximation was applied by interpolating the results of the harmonic approximation for each volume system. As a sensitivity test, the phonon density of states was calculated for the structures with temperature-dependent volumes at 298 K and 1000 K, obtained by the quasi-harmonic approximation, and the corresponding thermal neutron scattering cross section was evaluated. The temperature-dependent volume and heat capacity of uranium silicide obtained by the quasi-harmonic approximation showed reasonable agreement with experimental data while lattice thermal expansion showed deviation from experimental observations. Thermal scattering cross sections evaluated from 0 K and temperature-dependent phonon density of states exhibited differences of up to 4.1% at 1000 K. This study examines the impact of temperature on the thermal scattering law, employing ab initio lattice dynamics simulations through the quasi-harmonic approximation.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2018

Self-assembled porous metal-intermetallic nanocomposites via liquid metal dealloying

A major challenge in the synthesis of high surface area metals via subtractive processes such as dealloying is maintaining the mechanical integrity of the resulting porous materials. This issue is especially apparent in liquid metal dealloying, in which high-temperature selective dissolution in a molten metal bath leads to bicontinuous porosity formation. In liquid metal dealloying of polycrystalline alloys, grain boundary separation leads to the detachment of individual grains. In this work, we show that addition of small amounts of silicon to Nbsingle bondTi or Tasingle bondTi parent alloys leads to the generation of self-assembled arrays of intermetallic (niobium silicide or tantalum silicide) plates that are structurally merged with the usual bicontinuous porosity seen in dealloying. These silicide plates pass through grain boundaries and hold the niobium or tantalum network intact without strongly affecting the microstructural evolution during dealloying. Our approach yields a mechanically robust porous metal-intermetallic composite, which can be further processed to form tertiary materials via re-impregnation by a new third phase. The materials design strategy introduced here can be generalized to serve as a platform to form dense multiphase nanocomposites.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Steam oxidation of chromium corrosion barrier coatings for sic-based accident tolerant fuel cladding

SiC-based materials are currently being considered for accident tolerant fuel (ATF) cladding, however, there are concerns regarding hydrothermal corrosion rates and hermeticity. These issues may be addressed with the utilization of a Cr corrosion barrier coating (CBC) but the interaction of Cr with SiC under loss of coolant accident (LOCA) conditions needs to be investigated. In the present work, Cr coatings were deposited onto chemically vapor deposited (CVD) SiC with either high power impulse magnetron sputtering (HiPIMS), cathodic arc (CA), or a combination of both. Annealing and steam thermogravimetric analysis (TGA) was used to study reaction product formation with and without oxidation. Additionally, after 1200 °C annealing, formation of a Cr x C y carbide layer at the ambient interface and a Cr x Si y C z silicide layer at the SiC interface was observed. After 1200 °C TGA exposure, similar carbide and silicide layers were observed but with a Cr 2 O 3 outer reaction layer and a Si and O rich interfacial layer forming between the carbide and silicide layers. Initial mass gain of the coatings during the 1200 °C TGA exposure was parabolic and were similar to reported rates of chromia formation. Mass gain behavior and observed transitions in chromia microstructure indicate that metallic Cr may be consumed within the first ~1 h at 1200 °C and that subsequent chromia formation occurs at the expense of the underlying Cr carbide layer. Overall, the results show no detrimental impact of Cr coatings on the steam oxidation resistance of SiC up to 4 h at 1200 °C.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2023

Electrochemical Formation of Li-M-(M')-Si Phases Using Multivalent Electrolyte Salt Additives

Lithium-rich silicides (Li 15 Si 4 ), formed during the electrochemical lithiation of silicon, show high reactivity with electrolyte components that contribute to capacity decay, formal lithium loss, and low coulombic efficiency. Recently, the reactivity of lithium silicides was found to be suppressed by substituting a multivalent cation (i.e. Mg, Ca) for lithium that results in the room temperature formation of a ternary Li-M-Si phase. In this study, we explored a range of multivalent electrolyte salt additives (M = Ni, Cu, La, Ce, Sr, Ba, and Ca-Mg mixed salt) in a lithium-ion cell configuration and identified a room temperature electrochemical route to the formation of new ternary and quaternary lithium silicides. Using this method, both nickel and copper salts were found to plate onto the silicon electrode surface upon lithiation. Further, based on refined synchrotron XRD data, multivalent cations with an ionic radius similar to Na (~1.03 Å) or smaller can be inserted electrochemically into a formally cation-deficient Li 15 Si 4 host lattice to form new ternary (or quartenary) phases. The electrochemical synthesis of a new quaternary Li-M-M’-Si phase represents a facile route to preparing and scaling materials isostructural to the Heusler phase and electron-precise Li 14 MgSi 4 phase that results in enhanced cycling and calendar life performance.

25 ENERGY STORAGE↗
DOE OSTI2018

CHARACTERIZATION OF DIRECT ADDITIVE MANUFACTURED U3Si2 SURROGATE TO PREDICT U3Si2 MICROSTRUCTURES

The purpose of this research is to perform characterization exclusively on U3Si2 surrogate materials to predict the process envelope for future work with uranium compounds, considering potential microstructural properties. The surrogate material will be synthesized using a laser energy source. This characterization work will provide new property data to aid the concept development stages of fabricating U3Si2 by means of a novel INL-designed direct additive manufacturing methodology. This process not only seeks to potentially reduce production costs, but also to shorten the current silicide fuel fabrication process. U3Si2 has been downselected as a candidate for accident-tolerant fuel for commercial light-water reactors due to its improved thermal conductivity, higher atomic density, and fuel cycle economics when compared with UO2. The research efforts on this work are performed at Idaho National Laboratory (INL) in partnership with Westinghouse Electric. The initial stage of the surrogate research will include a thermodynamic study along with physical and mechanical property analyses to assist in the downselection of surrogate materials for initial experimentation. Initial characterization analyzed the microstructural effects to determine effectiveness of laser interaction on the surrogate materials. Additional characterization via scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray diffraction (XRD) may predict the end product morphology when working with uranium compounds. Complementary comparative studies were performed on the surrogate end products analyzing similarities in microstructural features present on the U3Si2 fuel fabricated by means of alternate methods. This stage provided novel microstructural data on surrogate silicide fuel fabrication by means of an additive manufacturing process (laser synthesis), and was crucial to confirm the formation of surrogate silicide fuels (Hf3Si2 and Zr3Si2) employing a laser synthesis.

42 ENGINEERING↗
NASA NTRS1967

Development of Coatings for Tantalum Alloy Nozzle Vanes

A group of silicide coatings developed for the T222 tantalum-base alloy have afforded over 600 hours of protection at 1600 and 2400 F during cyclic exposure in air. These coatings were applied in two steps. A modifier alloy was applied by slurry techniques and was sintered in vacuum prior to siliciding by pack cementation in argon. Application of the modifier alloy by pack cementation was found to be much less effective. The addition of titanium and vanadium to molybdenum and tungsten yielded beneficial modifier alloys, whereas the addition of chromium showed no improvement. After siliciding, the 15Ti- 35W-15V-35Mo modifier alloy exhibited the best performance; one sample survived 1064 hours of oxidation at 2400 F. This same coating was the only coating to reproducibly provide 600 hours of protection at both 1600 and 2400 F; in the second and third of three experiments, involving oxidation of three to five specimens at each temperature in each experiment, no failures were observed in 600 hours of testing. The slurry coatings were also shown to protect the Cb752 and D43 columbium-base alloys.

PROTECTIVE COATING↗
NASA NTRS1979

Polycrystalline silicon on tungsten substrates

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Bevolo, A. J.↗
NASA NTRS1979

Interfacial reactions in borsic/Ti-3Al-2-1/2V composite

The paper provides a detailed X-ray characterization of a borsic/Ti-3Al-2-1/2V composite, and to correlate the relative intensities of the reaction products with the mechanical properties. Based on X-ray integrated intensity data two stages of interface reactions were identified: during the first stage there is a simultaneous interdiffusion of Si, C, and Ti atoms at the filament/matrix interface resulting in the formation of Ti5Si3, TiSi and small amounts of TiSi2 and TiC. The second stage is associated with considerable TiSi2 and boride formation. It appears that the alpha-phase of Ti is more reactive in forming silicides and borides than the beta-phase. The silicide intensities and the reaction zone thicknesses are shown to be directly related to the reduction of the ultimate tensile strength by thermal degradation, and the results indicate that silicide reaction products are as detrimental to strength as the borides.

Rao, V. B.↗
NASA NTRS1990

Layered Internal-Photoemission Sensor

High quantum efficiency achieved without multiple layer contacts. Proposed infrared sensor based on photoemission from multiple layers of metal silicide sandwiched between layers of silicon. Suitable for use in focal-plane arrays. Layered internal-photoemission sensor has positive/intrinsic/negative structure modified by inclusion of layers or islands of metal silicide. Holes photo-excited from silicide regions and swept to detection by reverse-bias electric field in intrinsic silicon. Easier to make because internal layers allowed to "float" electrically, contact being made with only two outer semiconductor layers.

Fathauer, Robert W.↗
NASA NTRS1992

Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

George, T.↗
NASA NTRS2006

Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors

Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures ranging from 450 to 600 C for more than 750 hours. The sensors were found to be stable after a break-in time of nearly 200 hours. The sensors exhibited high sensitivity: sensor currents changed by factors ranging from 300 to 800 when the gas was changed from pure N2 to 0.5 percent H2 in N2.

Hunter, Gary W.↗
NASA NTRS2013

Advanced Materials and Manufacturing for Low-Cost, High-Performance Liquid Rocket Combustion Chambers

A document describes the low-cost manufacturing of C103 niobium alloy combustion chambers, and the use of a high-temperature, oxidation-resistant coating that is superior to the standard silicide coating. The manufacturing process involved low-temperature spray deposition of C103 on removable plastic mandrels produced by rapid prototyping. Thin, vapor-deposited platinum-indium coatings were shown to substantially improve oxidation resistance relative to the standard silicide coating. Development of different low-cost plastic thrust chamber mandrel materials and prototyping processes (selective laser sintering and stereolithography) yielded mandrels with good dimensional accuracy (within a couple of mils) for this stage of development. The feasibility of using the kinetic metallization cold-spray process for fabrication of free-standing C1O3 thrusters on removable plastic mandrels was also demonstrated. The ambient and elevated temperature mechanical properties of the material were shown to be reasonably good relative to conventionally processed C103, but the greatest potential benefit is that coldsprayed chambers require minimal post-process machining, resulting in substantially lower machining and material costs. The platinum-iridium coating was shown to provide greatly increased oxidation resistance over the silicide when evaluated through oxyacetylene torch testing to as high as 300 F (= 150 C). The iridium component minimizes reaction with the niobium alloy chamber at high temperatures, and provides the high-temperature oxidation resistance needed at the throat.

Williams, Brian E.↗
NASA NTRS2015

WSi2 in Si(1-x)Ge(x) Composites: Processing and Thermoelectric Properties

Traditional SiGe thermoelectrics have potential for enhanced figure of merit (ZT) via nano-structuring with a silicide phase, such as WSi2. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples were prepared using powder metallurgy techniques; including mechano-chemical alloying, via ball milling, and spark plasma sintering for densification. Processing, micro-structural development, and thermoelectric properties will be discussed. Additionally, couple and device level characterization will be introduced.

Thermoelectric Power Generation↗
DOE OSTI2015

Structural and electronic properties of XSi{sub 2} (X = Cr, Mo, and W)

The structural and electronic properties of metal silicides XSi{sub 2} (X = Cr, Mo, and W), which crystallize in tetragonal structure, are investigated systematically using the first-principle density functional theory. The total energies are computed as a function of volume and fitted to the Birch equation of state. The ground-state properties such as equilibrium lattice constants a{sub 0} and c{sub 0}, bulk modulus B, its pressure derivative B, B′, and the density of states at the Fermi level, N(E{sub F}), are calculated and compared with other experimental and theoretical results, showing good agreement. The calculated band structure indicates that XSi{sub 2} compounds are semimetallic in nature. From the present study, we predict the structural and electronic properties of CrSi{sub 2} in the tetragonal phase and indicate that CrSi{sub 2} is energetically more stable than MoSi{sub 2} and WSi{sub 2}. Analyzing the bonding properties of the three metal silicides, we observe that WSi{sub 2} has a strong covalent bonding due to W 5d electrons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Rapid microwaves synthesis of CoSi{sub x}/CNTs as novel catalytic materials for hydrogenation of phthalic anhydride

CoSi{sub x}/CNTs catalysts with different CoSi{sub x} phases (CoSi, CoSi{sub 2}) have been rapidly synthesized via a microwave-assisted route and applied for the liquid phase hydrogenation of phthalic anhydride. The synthesized catalysts were analyzed and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy-energy dispersive X-ray spectroscopy, thermogravimetric/derivative thermogravimetric analysis. The reaction progress of cobalt silicides and the ratio of Co:Si were monitored at different microwave irradiation times by XRD, giving insight into the formation mechanism. Compared to the Co/CNTs catalyst, all the prepared CoSi{sub x}/CNTs catalysts exhibited excellent activity and good selectivity to phthalide under mild reaction conditions (180–220 °C and 4.0 MPa H{sub 2}). This novel methodology can be applied to the synthesis of other transition metal silicides such as FeSi, Ni{sub 2}Si, and Cu{sub 4}Si. - Graphical abstract: CoSi{sub x}/CNTs catalysts with different CoSi{sub x} phases (CoSi{sub 2}, CoSi) have been rapidly synthesized via microwave-assisted route, which involves the vaporization of CoCl{sub 2} and subsequent reaction of CoCl{sub 2} with Si. - Highlights: • CoSi{sub x}/CNTs catalysts have been rapid synthesized via microwave-assisted route. • The phases of CoSi{sub x} were controlled by varying microwave time and Co:Si ratio. • FeSi, Ni{sub 2}Si and Cu{sub 4}Si were also synthesized via microwave-assisted route. • CoSi{sub x}/CNTs catalysts can be applied in hydrogenation of phthalic anhydride.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗