Energy spectrum of charged particles emitted following muon capture in Si super 28.
Charged particle energy spectrum high resolution study following muon capture in Si-28 using Si/Li/ detector
Sobottka, S. E.↗
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Results for “SI”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Piezo-electroreflectance in Ge, GaAs, and Si.
Piezoelectroreflectance in Ge, Si and GaAs studied for uniaxial stress effects on electronic energy bands
Cardona, M.↗
On the efficiency of segmented Si-Ge-PbTe thermocouples.
Si-Ge/cold/-Pb-Te/hot/ segmented thermocouples joined by bonding to tungsten intermediate, determining efficiency by measuring heat flux from cold side
Bates, H. E.↗
Thermally insensitive determinations of transition probabilities for CI, OI, NeI, AlII, SiI, SiII, PI, PII, SI, SII, and ClI
Thermally insensitive determinations of transition probabilities for CI, OI, NeI, AlII, SiI, SiII, Pi, PII, SI, SII, and ClI
Miller, M. H.↗
Interaction of Li and O with radiation- produced defects in Si.
Li atoms and O interactions with electron radiation produced defects in Si studied by IR spectroscopy
Corelli, J. C.↗
Lithium-like spectra in Mg, Al, and Si
Lithium-like line spectra in Mg, Al and Si observed with grazing incidence spectrometer and low inductance microfarad spark source
Behring, W.↗
Lunar rock 12013 - O, Si, Al and Fe abundances
Neutron activation analysis of O, Si, Al, and Fe abundances in Apollo 12 lunar rock 12013
Ehmann, W. D.↗
Spectra of Mg IX, Al X, and Si XI isoelectronic with Be I
Mg, Al and Si ions spectral analysis, discussing energy levels and transition lines
Behring, W.↗
Fatigue crack growth in Si-Fe
Si-Fe fatigue crack growth in vacuum at various temperatures, discussing stress intensity, cleavage and ductility effects
Argon, A. S.↗
Lunar rock 12013 - O, Si, Al, and Fe abundances
O, Si, Al and Fe abundances of Apollo 12 lunar rock 12013 from neutron activation analysis
Ehmann, W. D.↗
O-18/O-16, Si-30/Si-28, D/H, and C-13/C-12 ratios in lunar samples
Apollo 11 and 12 lunar samples O 18/O 16, Si 30/Si 28, D/H and C 13/C 12 ratio determination, examining whole rocks, breccias, soils, plagioclases and fines
Epstein, S.↗
Thermoelectric properties of 80 a/o Si-20 a/o Ge alloy
This paper discusses the time and temperature dependence of the thermoelectric properties of n- and p-type 80 at. % Si-20 at. % Ge alloy. It is shown that the time-temperature behavior of the properties of both polarity types of this alloy can be described by means of a diffusion-limited dopant precipitation model due to Lifshitz and Slyozov (1961). An experimental program for the determination of the long-term behavior of the properties of the alloy is described in terms of the Lifshitz-Slyozov model, and the thermoelectric properties of the alloy are given for temperatures in the range from room temperature to 1000 C as a function of time up to and including twelve years. The data given for the p-type alloy represent the first time-dependent thermoelectric property data ever published for the p-type silicon-germanium alloys.
Raag, V.↗
Glass-Si heterojunction solar cells
Experimental studies and models for In2O3/Si and SnO2/N-Si solar cells are considered for their suitability in terrestrial applications. The silicon is the active material, and the glass serves as the window to solar radiation, an antireflection coating of the Si, and a low resistance contact. Results show that amorphous windows or layers suppress photocurrent. The interfacial SiO2 layer suppresses photocurrent and increases series resistance. Suppression increases with illumination.
Anderson, R. L.↗
Shock models of high-velocity interstellar Si III
Recent Copernicus observations of high-velocity interstellar Si III have been interpreted as evidence for collisionally ionized gas at 30,000 to 80,000 K. In this paper, these observations are summarized, and conductive-interface and shock-heating mechanisms are investigated as sources for the temperatures, column densities, and velocity fields. The conductive mechanism evidently cannot reproduce the observations, but radiatively cooling shocks of 50 to 100 km/s, produced by supernova remnants or stellar winds, may provide a viable explanation. Time-dependent calculations of the cooling and ionization behind such shocks show the importance of initial ionization conditions at 100,000 K and produce results substantially different from those of calculations which start at 1 million K.
Shull, J. M.↗
Comprehensive thermoelectric properties of n- and p-type 78a/o Si - 22a/o Ge alloy
The time and temperature dependence of the thermoelectric properties on n- and p-type 78 a/o Si - 22 a/o Ge alloy are presented in detail for the range of temperatures of zero to 1000 C and operating times up to twelve years. The mechanisms responsible for the time dependence of the properties are discussed and mathematical models used in the derivation of the property values from experimental data are presented. The thermoelectric properties for each polarity type of the alloy are presented as a function of temperature for various operating times.
Raag, V.↗
Si and GaAs photocapacitive MIS infrared detectors
Improvement of the previously reported photocapacitive MIS infrared detectors has led to the development of exceptional room-temperature devices. Unoptimized peak detectivities on the order of 10 to the 13th cm sq rt Hz/W, a value which exceeds the best obtainable from existing solid-state detectors, have now been consistently obtained in Si and GaAs devices using high-capacitance LaF3 or composite LaF3/native-oxide insulating layers. The measured spectral response of representative samples is presented and discussed in detail together with a simple theory which accounts for the observed behavior. The response of an ideal MIS photocapacitor is also contrasted with that of both a conventional photoconductor and a p-i-n photodiode, and reasons for the superior performance of the MIS detectors are given. Finally, fundamental studies on the electrical, optical, and noise characteristics of the MIS structures are analyzed and discussed in the context of infrared-detector applications.
Sher, A.↗
Interstellar C IV and Si IV column densities toward early-type stars
Equivalent widths and deduced column densities of Si IV and C IV are examined for 18 early-type close binaries, and physical processes responsible for the origin of these ions in the interstellar medium are investigated. The available C IV/Si IV column density ratios typically lie within a narrow range from 0.8 to 4.5, and there is evidence that the column density of C IV is higher than that of N V along most lines of sight, suggesting that C IV is not formed in the same hot region as O VI. In addition, the existence of regions with a narrowly defined new temperature range around 50,000 deg K is indicated. The detection of the semitorrid gas of Bruhweiler, Kondo, and McCluskey (1978, 1979) is substantiated, and the relation of this gas to the observations of coronal gas in the galactic halo is discussed.
Bruhweiler, F. C.↗
Improved characterization of the Si-SiO2 interface
Refined quasi-static and conductance methods, based on effectively thin composite insulating layers, low-carrier-concentration bulk semiconductors, and low-level illumination, have been applied to an improved characterization of the (100) Si-SiO2 interface. Accurate measurement of both the total density of interface states and its major components as a function of energy in the forbidden gap have been made over four decades (10-billion to 100-trillion states/eV sq cm) on a single sample. The normal U-shaped density of states is resolved into separate valence- and conduction-band-derived contributions as well as impurity-derived contributions corresponding to concentrations on the order of 20 ppm at the interface.
Su, P.↗