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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Off-diagonal dark-matter phenomenology: Exploring enhanced complementarity relations in nonminimal dark sectors
In the majority of multi-component dark-matter scenarios, two classes of processes generically contribute to event rates at experiments capable of probing the nature of the dark sector. The first class consists of "diagonal" processes involving only a single species of dark-matter particle -- processes analogous to those which arise in single-component dark-matter scenarios. By contrast, the second class consists of "off-diagonal" processes involving dark-matter particles of different species. Such processes include inelastic scattering at direct-detection experiments, asymmetric production at colliders, dark-matter co-annihilation, and certain kinds of dark-matter decay. In typical multi-component scenarios, the contributions from diagonal processes dominate over those from off-diagonal processes. Unfortunately, this tends to mask those features which are most sensitive to the multi-component nature of the dark sector. In this paper, by contrast, we point out that there exist natural, multi-component dark-sector scenarios in which the off-diagonal contributions actually dominate over the diagonal. This then gives rise to a new, enhanced picture of dark-matter complementarity. Here, we introduce a scenario in which this situation arises and examine the enhanced picture of dark-matter complementarity which emerges.
Charge separation relative to the reaction plane in Pb-Pb collisions at s N N = 2.76 TeV
Not Available
Compensation in Al-Doped ZnO by Al-Related Acceptor Complexes: Synchrotron X-Ray Absorption Spectroscopy and Theory
Abstract not provided
Comment on “Relating Chain Conformations to Extensional Stress in Entangled Polymer Melts”
Abstract not provided.
Patatin-related phospholipase pPLAIIId increases seed oil content with long chain fatty acids in Arabidopsis
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Crystals of the Arp2/3 complex in two new space groups with structural information about actin-related protein 2 and potential WASP binding sites
Abstract not provided
Time Series Discord Detection in Medical Data using a Parallel Relational Database [PowerPoint]
Recent advances in sensor technology have made continuous real-time health monitoring available in both hospital and non-hospital settings. Since data collected from high frequency medical sensors includes a huge amount of data, storing and processing continuous medical data is an emerging big data area. Especially detecting anomaly in real time is important for patients’ emergency detection and prevention. A time series discord indicates a subsequence that has the maximum difference to the rest of the time series subsequences, meaning that it has abnormal or unusual data trends. In this study, we implemented two versions of time series discord detection algorithms on a high performance parallel database management system (DBMS) and applied them to 240 Hz waveform data collected from 9,723 patients. The initial brute force version of the discord detection algorithm takes each possible subsequence and calculates a distance to the nearest non-self match to find the biggest discords in time series. For the heuristic version of the algorithm, a combination of an array and a trie structure was applied to order time series data for enhancing time efficiency. The study results showed efficient data loading, decoding and discord searches in a large amount of data, benefiting from the time series discord detection algorithm and the architectural characteristics of the parallel DBMS including data compression, data pipe-lining, and task scheduling.
Advantages to Modeling Relational Data using Hypergraphs versus Graphs.
Abstract not provided.
Relative Lifetime Prediction for CPV Die-Attach Layers: Preprint
In concentrating photovoltaics (CPV) cell assemblies, a large-area die-attach layer is subjected to thermal cycles, leading to thermomechanical fatigue. This causes cracking and the eventual failure of the CPV cell by thermal runaway. We define a damage metric representing lumped progress toward failure and present a numerical model for computing the accumulation of damage for arbitrary transienttemperature conditions. The model is applied to a particular design with a solder die-attach layer. We show that accelerated-test thermal cycles with higher ramp rates cause more damage, both per cycle and per unit time. Outdoor exposure to one entire year in two geographic locations is also simulated, revealing that a year of exposure in Golden, Colorado is equivalent to 1.4 years of exposurein Oak Ridge, Tennessee.
Exploring and Quantifying How Communication Behaviors in Proxies Relate to Real Applications.
Abstract not provided.
Defect Band Luminescence Intensity Reversal as Related to Application of Anti-Reflection Coating on mc-Si PV Cells: Preprint
Photoluminescence (PL) imaging is widely used to identify defective regions within mc-Si PV cells. Recent PL imaging investigations of defect band luminescence (DBL) in mc-Si have revealed a perplexing phenomenon. Namely, the reversal of the DBL intensity in various regions of mc-Si PV material upon the application of a SiNx:H anti-reflective coating (ARC). Regions with low DBL intensity beforeARC application often exhibit high DBL intensity afterwards, and the converse is also true. PL imaging alone cannot explain this effect. We have used high resolution cathodoluminescence (CL) spectroscopy and electron beam induced current (EBIC) techniques to elucidate the origin of the DBL intensity reversal. Multiple sub-bandgap energy levels were identified that change in peak position andintensity upon the application of the ARC. Using this data, in addition to EBIC contrast information, we provide an explanation for the DBL intensity reversal based on the interaction of the detected energy levels with the SiNx:H ARC application. Multiple investigations have suggested that this is a global problem for mc-Si PV cells. Our results have the potential to provide mc-Si PV producers apathway to increased efficiencies through defect mitigation strategies.
Cu-Local Structures and Their Relation with Nanoscale Electrical Performance in CdTe
For decades, copper has been introduced in CdTe devices to improve overall performance (open circuit voltage, fill factor, and series resistance). While multiple articles have reported on Cu-based defects, very little is known about how the local structure around the copper atom affects electrical performance. Using X-ray Absorption Near Edge Structure (XANES) coupled with X-ray microscopy we investigate good and poor performing region in Cu-doped CdTe devices. Our XANES coupled with theoretical standards by FEFF9 suggest that CU 2 Te phase and Cu Cd may be responsible for the high electrical performance of the regions under study. This correlation of structure-performance at the nanoscale offers a unique framework to understand and tune processes with deep implications to the overall electrical performance of the solar cell.