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At least 271 records · Page 15

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DOE OSTI2019

A new recombineering system for precise genome-editing in Shewanella oneidensis strain MR-1 using single-stranded oligonucleotides

Abstract Shewanella oneidensis MR-1 is an invaluable host for the discovery and engineering of pathways important for bioremediation of toxic and radioactive metals and understanding extracellular electron transfer. However, genetic manipulation is challenging due to the lack of genetic tools. Previously, the only reliable method used for introducing DNA into Shewanella spp . at high efficiency was bacterial conjugation, enabling transposon mutagenesis and targeted knockouts using suicide vectors for gene disruptions. Here, we describe development of a robust and simple electroporation method in S . oneidensis that allows an efficiency of ~4.0 x 10 6 transformants/µg DNA. High transformation efficiency is maintained when cells are frozen for long term storage. In addition, we report a new prophage-mediated genome engineering (recombineering) system using a λ Red Beta homolog from Shewanella sp. W3-18-1. By targeting two different chromosomal alleles, we demonstrate its application for precise genome editing using single strand DNA oligonucleotides and show that an efficiency of ~5% recombinants among total cells can be obtained. This is the first effective and simple strategy for recombination with markerless mutations in S . oneidensis . Continued development of this recombinant technology will advance high-throughput and genome modification efforts to engineer and investigate S . oneidensis and other environmental bacteria.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2017

Do grain boundaries dominate non-radiative recombination in CH 3 NH 3 PbI 3 perovskite thin films?

Here, we examine GBs with respect to non-GB regions (grain surfaces (GSs) and grain interiors (GIs)) in high-quality micrometer-sized perovskite CH 3 NH 3 PbI 3 (or MAPbI 3 ) thin films using high-resolution confocal fluorescence-lifetime imaging microscopy in conjunction with kinetic modeling of charge-transport and recombination processes. We show that, contrary to previous studies, GBs in our perovskite MAPbI3 thin films do not lead to increased recombination but that recombination in these films happens primarily in the non-GB regions (i.e., GSs or GIs). We also find that GBs in these films are not transparent to photogenerated carriers, which is likely associated with a potential barrier at GBs. Lastly, even though GBs generally display lower luminescence intensities than GSs/GIs, the lifetimes at GBs are no worse than those at GSs/GIs, further suggesting that GBs do not dominate non-radiative recombination in MAPbI 3 thin films.

14 SOLAR ENERGY↗

DOE OSTI2021

Singlet fission and triplet pair recombination in bipentacenes with a twist

We investigate triplet pair dynamics in pentacene dimers that have varying degrees of coplanarity (pentacene–pentacene twist angle). The fine-tuning of the twist angle was achieved by alternating connectivity at the 1-position or 2-positions of pentacene. This mix-and-match connectivity leads to tunable twist angles between the two covalently linked pentacenes. These twisted dimers allow us to investigate the subtle effects that the dihedral angle between the covalently linked pentacenes imparts on singlet fission and triplet pair recombination dynamics. We observe that as the dihedral angle between the two bonded pentacenes is increased, the rates of singlet fission decrease, while the accompanying decrease in triplet recombination rates is stark. Temperature-dependent transient optical studies combined with theoretical calculations show that the triplet pair recombination proceeds primarily through a direct multiexciton internal conversion process. Calculations further show that the significant decrease in recombination rates can be directly attributed to a corresponding decrease in the magnitude of the nonadiabatic coupling between the singlet multiexcitonic state and the ground state. Furthermore, these results highlight the importance of the twist angle in designing systems that exhibit rapid singlet fission, while maintaining long triplet pair lifetimes in pentacene dimers.

14 SOLAR ENERGY↗

DOE OSTI2022

Spontaneous carrier generation and low recombination in high-efficiency non-fullerene solar cells

The current research reveals the unique photo physical properties and carrier generation mechanisms of high efficiency non-fullerene acceptor-based organic photovoltaic blends. The analysis of device performance, morphology, and photo physics reveals that the interface carrier generation cannot support the device's current output. It is seen that primary photon excitons can dissociate into charge carriers in Y6, which displays a time scale of ∼0.3 ps with polaron yields above 28% in neat and blended thin films. This characteristic in combination with a large exciton diffusion length enables high morphology tolerance in Y6-overloaded blends. The carrier generation process is also combined with recombination studies. The recombination rate quantified by flux-dependent transient absorption measurements yields less than 5% total recombination and nearly 0% geminate recombination. Furthermore, these results define the advantages of the Y6 non-fullerene acceptor (NFA) and reveal the fundamental importance of developing new NFA materials with superior photo physical properties.

14 SOLAR ENERGY↗

DOE OSTI2023

Interface property–functionality interplay suppresses bimolecular recombination facilitating above 18% efficiency organic solar cells embracing simplistic fabrication

Efficient exciton-to-charge generation from the introduction of non-fullerene acceptors (NFAs) has been an important breakthrough in organic solar cell (OSC) developments. However, low device fill factors (FFs) following significant free charge carrier recombination loss continue to undermine their marketplace potential. Previous studies have successfully uncovered the importance of donor and acceptor domains in promoting charge transport. However, the functionality of donor/acceptor (D/A) interfaces relevant to free charge recombination remains unclear despite such interfaces being present throughout the material. In this work, the disorder-induced uphill bulk-to-D/A interface transport energy landscape is unveiled to enhance the polaron recombination resistance thereby also mitigating the triplet state formation from back charge transfer. In simple words, increasing the interface disorder while keeping the purer domains highly ordered will impart greater bulk-to-interface differential energy which then serves as a recombination energy barrier. Herein, these are made possible by varying the NFA outer side chains from linear alkyls to bulkier 2D phenylalkyls which influence the donor–acceptor interaction and define the interfacial disorder. Meanwhile, the extent of interface disorder without tradeoff in geminate losses is dependent on electrostatics and nanomorphology driving efficient exciton dissociation. By understanding these interplays, remarkable FFs over 80% and power conversion efficiencies (PCEs) above 18% are revealed to remain accessible even with simple binary component device fabrication without additional components/treatments thereby maintaining the scalability. Consequently, the principles uncovered here will serve as the foundation to reach the optimum potential of binary and simple systems, a prerequisite to ultimately realize the most cost-effective OSC design strategies for practical applications.

14 SOLAR ENERGY↗

DOE OSTI2018

Radiative and Auger recombination processes in indium nitride

InN and In-rich InGaN alloys emit in the infrared range desirable for telecommunication applications. However, the droop problem reduces their efficiency at high power. Nonradiative Auger recombination is a strong contributor to this efficiency loss. Here, we investigate radiative and Auger recombination in InN and In-rich InGaN with first-principles calculations. We find that the direct eeh process dominates Auger recombination in these materials. In the degenerate carrier regime, the Auger and radiative rates are suppressed by different mechanisms: the radiative rate is affected by phase-space filling while Auger recombination is primarily reduced by free-carrier screening. The suppression of the radiative rate onsets at lower carrier densities than that of the Auger rate, which reduces the internal quantum efficiency of InN devices. Droop in InN can be mitigated by increasing the bandgap through alloying with GaN. Here, we demonstrate that the peak efficiency of In 0.93 Ga 0.07 N alloys (which emit at 1550 nm) is 33% higher than that of InN and occurs at higher carrier densities.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Laser-assisted radiative recombination in a cold hydrogen plasma

Abstract We study the process of laser-assisted radiative recombination of an electron with a proton in a cold hydrogen plasma employing the semiclassical Kramers’ approach which involves calculation of classical trajectories in combined laser and Coulomb fields and the use of the correspondence principle. Due to the Coulomb focusing effect, recombination is the most effective when the initial electron momentum is parallel to the laser polarization. Orders of magnitude enhancement of the cross section, as compared to the laser-free case, is observed in this case. With increasing angle between the electron momentum and polarization, the recombination cross section drops. However, even after averaging over Maxwellian velocity distribution we obtain a substantial enhancement of the recombination rate constant, as compared to the zero-field case. For the field intensities in the range 30–350 MW cm −2 , the enhancement occurs in the region of the radiation wavelength from 5 to 20 µ m and for the plasma temperature from 20 to 300 K.

Fabrikant, I. I. (ORCID:0000000293849454)↗

DOE OSTI2025

Angular dependent measurement of electron-ion recombination in liquid argon for ionization calorimetry in the ICARUS liquid argon time projection chamber

This paper reports on a measurement of electron-ion recombination in liquid argon in the ICARUS liquid argon time projection chamber (LArTPC). A clear dependence of recombination on the angle of the ionizing particle track relative to the drift electric field is observed. An ellipsoid modified box (EMB) model of recombination describes the data across all measured angles. These measurements are used for the calorimetric energy scale calibration of the ICARUS TPC, which is also presented. The impact of the EMB model is studied on calorimetric particle identification, as well as muon and proton energy measurements. Accounting for the angular dependence in EMB recombination improves the accuracy and precision of these measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

How negative feedback and the ambient environment limit the influence of recombination in common envelope evolution

ABSTRACT We perform 3D hydrodynamical simulations to study recombination and ionization during the common envelope (CE) phase of binary evolution, and develop techniques to track the ionic transitions in time and space. We simulate the interaction of a $2\, \mathrm{M_\odot }$ red giant branch primary and a $1\, \mathrm{M_\odot }$ companion modelled as a particle. We compare a run employing a tabulated equation of state (EOS) that accounts for ionization and recombination, with a run employing an ideal gas EOS. During the first half of the simulations, ∼15 per cent more mass is unbound in the tabulated EOS run due to the release of recombination energy, but by simulation end the difference has become negligible. We explain this as being a consequence of (i) the tabulated EOS run experiences a shallower inspiral and hence smaller orbital energy release at late times because recombination energy release expands the envelope and reduces drag, and (ii) collision and mixing between expanding envelope gas, ejecta and circumstellar ambient gas assists in unbinding the envelope, but does so less efficiently in the tabulated EOS run where some of the energy transferred to bound envelope gas is used for ionization. The rate of mass unbinding is approximately constant in the last half of the simulations and the orbital separation steadily decreases at late times. A simple linear extrapolation predicts a CE phase duration of ${\sim}2\, {\rm yr}$, after which the envelope would be unbound.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2026

Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium

Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Impact of phonons and spin-orbit coupling on Auger recombination in InAs

Here we extend the methodology for calculating Auger recombination from first principles to include spin-orbit interaction, which allows us to study materials in which the spin-orbit splitting and the band gap are of similar magnitude. We use this methodology to compute the direct and indirect Auger coefficients in InAs and related alloys. The direct process involves only Coulomb interaction, while the indirect process is mediated by phonons. We show how the spin-orbit split-off states allow for efficient direct Auger recombination, greatly enhancing the excitation rate of Auger holes due to a near resonance between the spin-orbit splitting and the band gap of the material. We find that the direct hole-hole-electron Auger recombination coefficient decays exponentially with increasing band gap, while the electron-electron-hole Auger recombination coefficient decays faster than exponentially. Additionally, we modeled the phonon-assisted process in InAs and show that the direct Auger process is dominant.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2017

Signal yields, energy resolution, and recombination fluctuations in liquid xenon

This study presents an analysis of monoenergetic electronic recoil peaks in the dark-matter-search and calibration data from the first underground science run of the Large Underground Xenon (LUX) detector. Liquid xenon charge and light yields for electronic recoil energies between 5.2 and 661.7 keV are measured, as well as the energy resolution for the LUX detector at those same energies. Additionally, there is an interpretation of existing measurements and descriptions of electron-ion recombination fluctuations in liquid xenon as limiting cases of a more general liquid xenon recombination fluctuation model. Measurements of the standard deviation of these fluctuations at monoenergetic electronic recoil peaks exhibit a linear dependence on the number of ions for energy deposits up to 661.7 keV, consistent with previous LUX measurements between 2 and 16 keV with 3 H. We highlight similarities in liquid xenon recombination for electronic and nuclear recoils with a comparison of recombination fluctuations measured with low-energy calibration data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2015

Weakly Deleterious Mutations and Low Rates of Recombination Limit the Impact of Natural Selection on Bacterial Genomes

Free-living bacteria are usually thought to have large effective population sizes, and so tiny selective differences can drive their evolution. However, because recombination is infrequent, “background selection” against slightly deleterious alleles should reduce the effective population size ( N e ) by orders of magnitude. For example, for a well-mixed population with 10 12 individuals and a typical level of homologous recombination ( r / m = 3, i.e., nucleotide changes due to recombination [ r ] occur at 3 times the mutation rate [ m ]), we predict that N e is < 10 7 . An argument for high N e values for bacteria has been the high genetic diversity within many bacterial “species,” but this diversity may be due to population structure: diversity across subpopulations can be far higher than diversity within a subpopulation, which makes it difficult to estimate N e correctly. Given an estimate of N e , standard population genetics models imply that selection should be sufficient to drive evolution if N e × s is >1, where s is the selection coefficient. We found that this remains approximately correct if background selection is occurring or when population structure is present. Overall, we predict that even for free-living bacteria with enormous populations, natural selection is only a significant force if s is above 10 -7 or so. Because bacteria form huge populations with trillions of individuals, the simplest theoretical prediction is that the better allele at a site would predominate even if its advantage was just 10 -9 per generation. In other words, virtually every nucleotide would be at the local optimum in most individuals. A more sophisticated theory considers that bacterial genomes have millions of sites each and selection events on these many sites could interfere with each other, so that only larger effects would be important. However, bacteria can exchange genetic material, and in principle, this exchange could eliminate the interference between the evolution of the sites. In conclusion, we used simulations to confirm that during multisite evolution with realistic levels of recombination, only larger effects are important. We propose that advantages of less than 10 -7 are effectively neutral.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2017

Recombination monitor

This is a brief report on LEReC recombination monitor design considerations. The recombination produced Au 78+ ion rate is reviewed. Based on this two designs are discussed. One is to use the large dispersion lattice. It is shown that even with the large separation of the Au 78+ beam from the Au 79+ beam, the continued monitoring of the recombination is not possible. Accumulation of Au 78+ ions is needed, plus collimation of the Au79+ beam. In another design, it is shown that the recombination monitor can be built based on the proposed scheme with the nominal lattice. From machine operation point of view, this design is preferable. Finally, possible studies and the alternative strategies with the basic goal of the monitor are discussed.

43 PARTICLE ACCELERATORS↗

DOE OSTI2014

The Induction of Recombinant Protein Bodies in Different Subcellular Compartments Reveals a Cryptic Plastid-Targeting Signal in the 27-kDa γ-Zein Sequence

Naturally occurring storage proteins such as zeins are used as fusion partners for recombinant proteins because they induce the formation of ectopic storage organelles known as protein bodies (PBs) where the proteins are stabilized by intermolecular interactions and the formation of disulfide bonds. Endogenous PBs are derived from the endoplasmic reticulum (ER). Here, we have used different targeting sequences to determine whether ectopic PBs composed of the N-terminal portion of mature 27 kDa γ-zein added to a fluorescent protein could be induced to form elsewhere in the cell. The addition of a transit peptide for targeting to plastids causes PB formation in the stroma, whereas in the absence of any added targeting sequence PBs were typically associated with the plastid envelope, revealing the presence of a cryptic plastid-targeting signal within the γ-zein cysteine-rich domain. The subcellular localization of the PBs influences their morphology and the solubility of the stored recombinant fusion protein. Our results indicate that the biogenesis and budding of PBs does not require ER-specific factors and therefore, confirm that γ-zein is a versatile fusion partner for recombinant proteins offering unique opportunities for the accumulation and bioencapsulation of recombinant proteins in different subcellular compartments.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2020

Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination

Rapid interwell carrier transport is a key process for a uniform carrier distribution and reduced Auger recombination in multiple quantum well (MQW) light emitting devices. In this work, the interwell transport has been studied by time-resolved photoluminescence in In 0.12 Ga 0.88 N MQWs with In x Ga 1–x N (x = 0 - 0.06) and Al 0.065 Ga 0.935 N barriers. Only for the InGaN barriers the transport is efficient. Furthermore, introduction of In into the barriers is accompanied by an increase of the nonradiative recombination at QW interfaces. Still, even with the increased Shockley–Read–Hall recombination, structures with InGaN barriers might be advantageous for high power devices because of the reduced Auger recombination.

36 MATERIALS SCIENCE↗

NASA NTRS1973

Recombination in radar meteors

Recombinations in the ionized columns generated by faint radar meteors are observed as: (1) A rapid loss of returned signal in the first few milliseconds after formation of the column; (2) an apparent absence of bright, low meteors; and (3) anomalies in apparent diffusion rates. Recombination at rates characteristic of dissociative recombination of ionized atmospheric molecules N2(+) and O2(+) is completely consistent with the observations. It appears either that the molecules are ionized in the initial formation of the ionized column or that there is rapid charge exchange. Recombination is a sufficient cause for the differences between diffusion measures and other atmospheric studies.

Southworth, R. B.↗

NASA NTRS1976

Recombination of electrons with NH4/+/-/NH3/n-series ions

The paper examines the recombination of electrons with ammonium-series cluster ions, NH4(+)-(NH3)n, for two reasons: (1) NH4(+) may be a significant ion in the lower atmospheres of the earth and the outer planets, and (2) to investigate the weak temperature dependence of the cluster ion's recombination coefficient. A microwave afterglow mass spectrometer was used to determine the recombination coefficients for the first five members of the ammonium series, (18+) through (86+), at temperatures between 200 and 410 K. The electron temperature dependence of the recombination coefficient was determined for (35+) and (52+), the n = 1 and 2 cluster ions, over the temperature range 300-3000 K.

Huang, C.-M.↗