Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “P”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15

The concentration and distribution of 2,3,7,8-dibenzo-p-dioxins/-furans in chickens

The concentrations of the 2,3,7,8-Cl substituted dibenzo-p-dioxins/-furans (PCDDs/PCDFs) were determined in the edible tissues of whole chicken fryers and compared with the values found in their abdominal fat. The values are presented both on a whole weight basis and on a lipid adjusted basis for each tissue. While there is a marked difference in the concentration of the 2,3,7,8-dibenzo-p-dioxins in the edible tissues expressed on a whole weight basis, the lipid-adjusted concentrations of the individual dioxins were not statistically different in the various tissues. This validates the use of lipid adjusted concentrations of 2,3,7,8-PCDDs/PCDFs in abdominal fat for the determination of the presence of these compounds in different tissues.

Chickens/metabolism↗

Multi-Shielded p-FET Dosimeter

A compact device was developed for dose measurements where each of four p-FETs has a different shield. Radiation data from the STRV-1b shows that p-FETs can be used to map the radiation inside a spacecraft.

p-FET dosimeters↗

Relevance of the American Statistical Society's Warning on P-Values for Conjunction Assessment

On March 7, 2016, the American Statistical Association (ASA) issued an online editorial paper on the "context, process, and purpose of p-values." According to the paper, "the statement articulates in non-technical terms a few select principles that could improve the conductor interpretation of quantitative science, according to widespread consensus in the statistical community." This "consensus" statement was accompanied by 21 "commentaries" expressing a diversity of opinions among the panel of experts ASA convened. In the present work, we express our view that the ASA p-value warning has relevance to the space object Conjunction Assessment (CA) community.

p-values↗

TOI-677b: A Warm Jupiter (P=11.2 days) on an Eccentric Orbit Transiting a Late F-type Star

We report the discovery of TOI-677b,first identified as a candidate in light curves obtained within Sectors 9 and 10 of the Transiting Exoplanet Survey Satellite(TESS)mission and confirmed with radial velocities. TOI-677b has a mass of M(p) = 1.236(+0.069,- 0.067) M(J), a radius of R(P)=1.170 ± 0.03 R(J), and orbits its bright host star (V = 9.8 mag) with an orbital period of 11.23660 ± 0.00011 d, on an eccentric orbit with e = 0.435 ± 0.024. The host star has a mass of M(*) = 1.181 ± 0.058 M(ʘ), a radius of R(*)= 1.28(+0.03,-0.03) R(ʘ), an age of 2.92 (+0.80,-0.73) Gyr and solar metallicity, properties consistent with a main-sequence late-F star with T(eff)=6295 ± 77K. We find evidence in the radial velocity measurements of a secondary long-term signal, which could be due to an outer companion. The TOI-677 b system is a well-suited target for Rossiter–Mclaughlin observations that can constrain migration mechanisms of close-in giant planets.

Andrés Jordán↗

The p-process in explosive nucleosynthesis.

The limiting conditions consistent with p-process synthesis in supernova envelopes are inferred from calculations of the appropriate rates of proton capture and neutron photodisintegration. Temperatures in excess of 2 x 10 to the 9th power K are required, for proton mass densities of the order of 100 g cm to the minus 3rd power, if significant production of p-process nuclei is to take place on a hydrodynamic time scale. It is concluded that these processes must be appropriate to very different stellar or supernova environments.

Truran, J. W.↗

A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide

In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.

Lin, A. H.↗

Semi-empirical calculation of depletion region width in n+-p silicon solar cells

An extension of the width calculation for impurity distributions of complementary error function and the Gaussian function, in addition to the exponential function is used in combination with experimental width values deduced from capacitance measurements at zero bias to numerically determine the width occurring in both the n+ and p junctions. The total possible error o the semi-empirical calculation is less than plus or minus 3%. Results show considerable variation in the depletion widths occurring in the n+ and p regions for different impurity profiles.

Wang, E. Y.↗

High efficiency graded band-gap Al/x/Ga/1-x/As-GaAs p-on-n solar cell

A theoretical analysis of p-on-n (p/n) graded band-gap Al/x/Ga/1-x/As-GaAs solar cells including all practical energy loss mechanisms predicts air mass zero efficiencies of 17.3%. The energy losses include those due to spectral reflection, surface, bulk and junction recombination currents, and series resistance. The device consists of a layer of p-type Al/x/Ga/1-x/As 3.5-micron thick on top of an n-type GaAs substrate. The graded band-gap is achieved by decreasing x from 0.35 at the surface to zero at the junction. The same structure without the graded Al concentration, no longer an optimum device, has an efficiency of 10.4%. The primary function of the graded band-gap material is the reduction of surface and bulk recombination losses in the surface layer by a built-in electric field. A comparison of the p/n structure with an optimized n/p structure indicates that the latter has a slightly higher efficiency (17.7%) for assumed minority carrier diffusion lengths and surface recombination velocity.

Hutchby, J. A.↗

Theoretical optimization and parametric study of n-on-p Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A comprehensive theoretical model of the graded band-gap Al(x)Ga(1-x)As-GaAs solar cell is used to optimize the n-on-p cell. The model includes power losses due to surface, bulk, and junction minority-carrier recombination, series resistance, and photon reflection from an SiO antireflection coating of optimum thickness. The optimized cell has a junction depth/graded band-gap layer thickness of 1.0 micron, respective donor and acceptor concentrations of 4 x 10 to the 17th power and 2 x 10 to the 17th power per cu cm, and a surface AlAs mode fraction of x = 0.35. The optimized graded band-gap cell has an air-mass-zero efficiency of 17.7% (not corrected for a 13% front surface contact area) and is shown to be less sensitive than a similar n-on-p GaAs cell to material degradation in the form of decreased minority-carrier diffusion lengths and increased surface-recombination velocity

Hutchby, J. A.↗

Analysis of epitaxial drift field N on P silicon solar cells

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Baraona, C. R.↗

Proto-Flight Manipulator Arm (P-FMA)

The technical development of the Proto-Flight Manipulator Arm (P-FMA) which is a seven-degree-of-freedom general-purpose arm capable of being remotely operated in an earth orbital environment is discussed. The P-FMA is a unique manipulator, combining the capabilities of significant dexterity, high tip forces, precise motion control, gear backdriveability, high end effector grip forces and torques, and the quality of flightworthiness. The 2.4-meter (8-foot) arm weighs 52.2 kilograms (115 pounds).

Britton, W. R.↗

The sensitivity of nonradial p mode eigenfrequencies to solar envelope structure

Eigenfrequencies are calculated for nonradial p mode oscillations in the sun. These frequencies are shown to depend on the adiabat of the solar convective envelope. The frequency dependence is greatest for the p2 and p3 modes described by spherical harmonics with l = 500 to 1000. The solar envelope model includes a realistic representation of the chromosphere out to the base of the corona. For the chromospheric model of Vernazza, Avrett, and Loeser (1976) chromospheric modes with a distinct locus of eigenfrequencies exist near an eigenfrequency of 0.026 Hz. The actual frequencies of these eigenmodes depend on the thickness of the chromosphere. Because of the difference in the dependence of eigenfrequency on l for the chromospheric modes as compared with the p modes, the two types of mode can be distinguished observationally. If detected, the chromospheric modes would provide a good way of determining the thickness of the chromosphere.

Ulrich, R. K.↗

Observations of nonradial p-mode oscillations on the sun

Observations of the solar velocity field with a diode array attached to the echelle spectrograph of a vacuum tower telescope are described which resolve the solar five-minute oscillatory motion into distinct bands of power. Previous observations are discussed which show that the solar five-minute oscillations can be resolved into frequencies having the character of nonradial p-mode eigenfrequencies of the solar envelope. The present observations confirm the observed frequencies and sharpen the previous resolution of the five-minute oscillations into ridges on the (wavenumber, frequency) plane. A comparison with earlier calculations indicates that the theoretical frequencies are in good but not perfect agreement with those observed. It is concluded that the identification of the five-minute oscillations as nonradial p-mode oscillations in the solar envelope is established beyond doubt.

Rhodes, E. J., Jr.↗

Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output.

Vonroos, O. H.↗

NASF transposition network: A computing network for unscrambling p-ordered vectors

The viewpoints of design, programming, and application of the transportation network (TN) is presented. The TN is a programmable combinational logic network that connects 521 memory modules to 512 processors. The unscrambling of p-ordered vectors to 1-ordered vectors in one cycle is described. The TN design is based upon the concept of cyclic groups from abstract algebra and primitive roots and indices from number theory. The programming of the TN is very simple, requiring only 20 bits: 10 bits for offset control and 10 bits for barrel switch shift control. This simple control is executed by the control unit (CU), not the processors. Any memory access by a processor must be coordinated with the CU and wait for all other processors to come to a synchronization point. These wait and synchronization events can be a degradation in performance to a computation. The TN application is for multidimensional data manipulation, matrix processing, and data sorting, and can also perform a perfect shuffle. Unlike other more complicated and powerful permutation networks, the TN cannot, if possible at all, unscramble non-p-ordered vectors in one cycle.

Lim, R. S.↗

Capacitance transients in p-type GaAs MOS structures and application to lifetime mapping during solar cell fabrication

Fabrication on p-type GaAs of MOS structures in which the quality of the oxide is such that the surface can be driven into deep inversion by a voltage pulse is reported. The capacitance transients in such MOS capacitors as a function of step amplitude and temperature were measured and the transients were analyzed by an extension of a method for silicon. The oxides were produced by plasma oxidation on an LPE-grown p-type GaAs specimen with N sub A of 3x10 to the 17th power/cu cm. The capacitors were produced by depositing 50 microns-diameter gold dots over the native oxide and, therefore, the lifetime is localized to the area under the dot. The method permits extraction of both the bulk lifetime and the interface recombination velocity. These parameters on samples with different N sub A were measured and a correlation between tau sub g and N sub A was found.

Vitale, G.↗

Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

Shanley, J. F.↗

Volatile element chemistry in the solar nebula - Na, K, F, Cl, Br, and P

The results of the most extensive set to date of thermodynamic calculations on the equilibrium chemistry of several hundred compounds of the elements Na, K, F, Cl, Br, and P in a solar composition system are reported. Two extreme models of accretion are investigated. In one extreme complete chemical equilibrium between condensates and gases is maintained because the time scale for accretion is long compared to the time scale for cooling or dissipation of the nebula. Condensates formed in this homogeneous accretion model include several phases such as whitlockite, alkali feldspars, and apatite minerals which are found in chondrites. In the other extreme complete isolation of newly formed condensates from prior condensates and gases occurs due to a time scale for accretion that is short relative to the time required for nebular cooling or dissipation. The condensates produced in this heterogeneous accretion model include alkali sulfides, ammonium halides, and ammonium phosphates. None of these phases are found in chondrites. Available observations of the Na, K, F, Cl, Br, and P elemental abundances in the terrestrial planets are found to be compatible with the predictions of the homogeneous accretion model.

Fegley, B., Jr.↗