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At least 271 records · Page 15

Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers

We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

High Electron Mobility Transistors (HEMTs)↗

X-Band, 17-Watt Solid-State Power Amplifier

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

Mittskus, Anthony↗

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Ma, Zhenqiang↗

Project Echo: 961-Mc Lower - Sideband Up - Converter for Satellite-Tracking Radar

A 961-Mc lower-sideband up-converter was specially designed to serve as preamplifier for the satellite-tracking radar used in Project Echo. The amplifier and its power supply are separately boxed and are installed directly behind the tracking antenna. The amplifier has been functioning most satisfactorily and has been used in routine manner to track the Echo satellite from horizon to horizon. This paper describes the design considerations, and details the special steps taken to ensure that the amplifier met the particular system needs of low noise, absolute stability, insensitivity to temperature fluctuations, and high input-power level before the onset of gain compression. The satisfactory operation of this amplifier confirms the great potentiality of parametric amplifiers as stable, low-noise, high-frequency receivers.

Uenohara, M.↗

Broadband RF-distribution amplifier

Radio frequency amplifier to distribute reference frequencies within communications systems and provide automatic gain control with low phase distortion is described. Use of photocell in electronic circuit to produce desired conditions is explained. Operation of entire amplifier circuit is analyzed.

Lutes, G. F., Jr.↗

Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)

A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.

Cornwell, Donald Mitchell, Jr.↗

Dual mode solid state power switch

A solid state amplifier has an output transistor stage and an input transistor stage interconnected as a Darlington circuit. An interstage transistor interconnecting the collectors of the two stages of the Darlington circuit is connected with the first stage transistor in a compound configuration. When the load current furnished by the amplifier is less than a predetermined value, the output stage operates as a simple saturated switch with its base drive current flowing through the emitter-base junction of the first stage which produces no collector current because the base-emitter junction of the interstage transistor is reverse-biased. When the load current exceeds said predetermined value, the interstage transistor begins to conduct allowing the input and output stages to operate as a Darlington amplifier and diverting a significant portion of the base drive current of the output transistor back into the load.

Maus, Louis C.↗

Simultaneous amplification of terahertz difference frequencies by an injection-seeded semiconductor laser amplifier at 850 nm

Two-frequency operation of an 850 nm semiconductor optical amplifier was achieved by simultaneously injection seeding it with two diode lasers. The two frequencies could be independently amplified without strong interference when they were separated by more than 10 GHz, and the spectral purity was preserved by the amplification process. At frequency differences below 10 GHz, unbalanced two-frequency output was observed, which can be explained by a two-mode interaction driven by the refractive index modulation at the beat frequency. The laser system is suitable for the difference-frequency generation of coherent terahertz radiation in ultra-fast photoconductors or nonlinear optical media.

NASA Discipline Exobiology↗

The MSAT spacecraft of Telesat Mobile Inc.

The MSAT spacecraft of the Canadian mobile satellite operator, Telesat Mobile Inc. (TMI) is described. When launched in 1994, the large geostationary MSAT spacecraft which is currently under construction by Hughes Aircraft Co. and Spar Aerospace Ltd. will enable TMI to provide mobile and transportable communications services to its customers even in the most remote parts of the North American continent. The main elements of TMI's mobile satellite system (described in a companion paper) are the space segment and the ground segment. TMI's space segment will employ one of two nearly identical satellites, one of which will be owned and operated by TMI, the other by the U.S. mobile satellite operator, American Mobile Satellite Corporation (AMSC). The two companies are participating in a joint spacecraft procurement in order to reduce the nonrecurring costs and to ensure system compatibility between the two systems; and they have also agreed to provide in-orbit backup to each other in the event of a catastrophic satellite failure. The program status, performance requirements, main parameters, and configuration of the MSAT spacecraft are reviewed. The major features of the communications subsystem are discussed in some detail, and a brief summary is presented of the spacecraft service module. Key technology items include the L-band RF power amplifier, which must operate with a high DC to RF power efficiency and generate low intermodulation when loaded with multi-carrier signals; and the large diameter deployable L-band antenna. The development status and expected performance of these spacecraft components is examined.

Bertenyi, E.↗

Optimal coherent image amplification by two-wave coupling in photorefractive BaTiO3

Coherent image amplification by two-wave coupling in a crystal of photorefractive BaTiO3 is analyzed. This amplifier is optimized with respect to such operational characteristics as gain versus amplified image quality and space-bandwidth product. Experimental results that demonstrate coherent image amplification of 4000, space-bandwidth product of 1,000,000, and gray-level dynamic range of greater than 100 are presented.

Fainman, Y.↗

Waveguide Power-Amplifier Module for 80 to 150 GHz

A waveguide power-amplifier module capable of operating over the frequency range from 80 to 150 GHz has been constructed. The module comprises a previously reported power amplifier packaged in a waveguide housing that is compatible with WR-8 waveguides. (WR- 8 is a standard waveguide size for the nominal frequency range from 90 to 140 GHz.) The waveguide power-amplifier module is robust and can be bolted to test equipment and to other electronic circuits with which the amplifier must be connected for normal operation.

Samoska, Lorene↗

Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitrate (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6, and Drain Efficiency (DE) of 48.9 under continuous wave (CW) operation.

Cognitive↗

Thrust Stand for Electric Propulsion Performance Evaluation

An electric propulsion thrust stand capable of supporting testing of thrusters having a total mass of up to 125 kg and producing thrust levels between 100 microN to 1 N has been developed and tested. The design features a conventional hanging pendulum arm attached to a balance mechanism that converts horizontal deflections produced by the operating thruster into amplified vertical motion of a secondary arm. The level of amplification is changed through adjustment of the location of one of the pivot points linking the system. Response of the system depends on the relative magnitudes of the restoring moments applied by the displaced thruster mass and the twisting torsional pivots connecting the members of the balance mechanism. Displacement is measured using a non-contact, optical linear gap displacement transducer and balance oscillatory motion is attenuated using a passive, eddy-current damper. The thrust stand employs an automated leveling and thermal control system. Pools of liquid gallium are used to deliver power to the thruster without using solid wire connections, which can exert undesirable time-varying forces on the balance. These systems serve to eliminate sources of zero-drift that can occur as the stand thermally or mechanically shifts during the course of an experiment. An in-situ calibration rig allows for steady-state calibration before, during and after thruster operation. Thrust measurements were carried out on a cylindrical Hall thruster that produces mN-level thrust. The measurements were very repeatable, producing results that compare favorably with previously published performance data, but with considerably smaller uncertainty.

Polzin, Kurt A.↗

Human machine interaction via the transfer of power and information signals

Robot manipulators are designed to perform tasks which would otherwise be executed by a human operator. No manipulator can even approach the speed and accuracy with which humans execute these tasks. But manipulators have the capability to exceed human ability in one particular area: strength. Through any reasonable observation and experience, the human's ability to perform a variety of physical tasks is limited not by his intelligence, but by his physical strength. If, in the appropriate environment, we can more closely integrate the mechanical power of a machine with intellectually driven human hand under the supervisory control of the human's intellect, we will then have a system which is superior to a loosely-integrated combination of a human and his fully automated robot as in the present day robotic systems. We must therefore develop a fundamental approach to the problem of this extending human mechanical power in certain environments. Extenders will be a class of robots worn by humans to increase human mechanical ability, while the wearer's intellect remains the central intelligent control system for manipulating the extender. The human body, in physical contact with the extender, exchanges information signals and power with the extender. Commands are transferred to the extender via the contact forces between the wearer and the extender as opposed to use of joystick (master arm), push-button or key-board to execute such commands that were used in previous man amplifiers. Instead, the operator becomes an integral part of the extender while executing the task. In this unique configuration the mechanical power transfer between the human and extender occurs in addition to information signal transfer. When the wearer uses the extender to touch and manipulate an object, the extender transfers to the wearer's hand, in feedback fashion, a scaled-down value of the actual external load which the extender is manipulating. This natural feedback force on the wearer's hand allows him to feel the scaled-down value of the external forces in the manipulations. Extenders can be utilized to maneuver very heavy loads in factories, shipyards, airports, and construction sites. In some instances, for example, extenders can replace forklifts. The experimental results for a prototype extender are discussed.

Kazerooni, H.↗

Accurate nine-decade temperature-compensated logarithmic amplifier

Transistor-driven temperature-stable amplifier with logarithmic operating characteristics permits presentation of the entire range of the reactor without range switching. This circuit is capable of monitoring ion chamber currents over spans of 8 or 9 decades and is used in nuclear reactor instrumentation. Application is found in materials under ultrahigh vacuum.

Bobis, J. P.↗

Fluid technology (selected components, devices, and systems): A compilation

Developments in fluid technology and hydraulic equipment are presented. The subjects considered are: (1) the use of fluids in the operation of switches, amplifiers, and servo devices, (2) devices and data for laboratory use in the study of fluid dynamics, and (3) the use of fluids as controls and certain methods of controlling fluids.

Source record↗

Radio bridges through the universe

The design and operation of quantum amplifiers to detect extremely weak radio signals from space are discussed. Special attention was given to amplifier performance in planetary radar ranging studies, super-long baseline radio interferometry, and remote space communications. Amplifier sensitivity was also examined.

Prokhorov, A.↗