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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Banning standard cell engineering notebook

A family of standardized thick-oxide P-MOS building blocks (standard cells) is described. The information is presented in a form useful for systems designs, logic design, and the preparation of inputs to both sets of Design Automation programs for array design and analysis. A data sheet is provided for each cell and gives the cell name, the cell number, its logic symbol, Boolean equation, truth table, circuit schematic circuit composite, input-output capacitances, and revision date. The circuit type file, also given for each cell, together with the logic drawing contained on the data sheet provides all the information required to prepare input data files for the Design Automation Systems. A detailed description of the electrical design procedure is included.

Source record↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The initial results obtained from the Complementary Metal Oxide Semiconductors Radiation Effects Measurement experiment are presented. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on the ground simulation experiment with Co 60, indicated that the measured space damage is greater than predicted by a factor of two for shields thicker than 100 mils (2.54 mm), but agrees well with predictions for the thinner shields.

Cliff, R. A.↗
NASA NTRS1975

Ion-implantation effect on time-dependent breakdown in SiO2

It was experimentally demonstrated that the field emission of positive ions from the metal SiO2 interface in MOS structures can be controlled by introducing a positive charge in a small ion-implantation dose to a shallow depth below the metal electrode. Considerable improvement of time-dependent breakdown was noted in structures implanted in this manner as opposed to nonimplanted ones. This experiment confirms the model proposed by Li and Maserjian (1975) for radiation effect on time-dependent breakdown.

Li, S. P.↗
NASA NTRS1975

The revolution in data gathering systems

This paper gives a review of the data-acquisition systems used in NASA's wind tunnels from the 1950's to the present as a basis for assessing the impact of minicomputers and microcomputers on data acquisition and processing. The operation and disadvantages of wind-tunnel data systems are summarized for the period before 1950, the early 1950's, the early and late 1960's, and the early 1970's. Some significant advances discussed include the use or development of solid-state components, minicomputer systems, large central computers, on-line data processing, autoranging DC amplifiers, MOS-FET multiplexers, MSI and LSI logic, computer-controlled programmable amplifiers, solid-state remote multiplexing, integrated circuits, and microprocessors. The distributed system currently in use with the 40-ft by 80-ft wind tunnel at Ames Research Center is described in detail. The expected employment of distributed systems and microprocessors in the next decade is noted.

Cambra, J. M.↗
NASA NTRS1974

A multichannel EEG telemetry system utilizing a PCM subcarrier

A multichannel personal-type telemetry system is described that utilizes PCM encoding for the most effective range with minimum RF bandwidth and noise interference. Recent IC developments (COS MOS) make it possible to implement a sophisticated encoding system (PCM) within the low power and size constraints necessary for a personal biotelemetry system. This system includes low-level high-impedance preamplifiers to make the system suitable for EEG recording.

Fryer, T. B.↗
NASA NTRS1977

Safe handling practices for electrostatic-sensitive devices

Review is detailed compilation of safe handling practices for Metal-Oxide Semiconductor (MOS) circuit elements and other devices that are susceptible to damage by electrostatic discharge. Article lists safety procedures for all aspects of handling and use of these components. Included are guidelines for setting up static-free work station and list of materials and equipment needed to maintain antistatic protection. Appendix gives vendors of these items.

Herring, L. L.↗
NASA NTRS1976

Demonstration program for Omega receiver prototype microcomputer data processing

The JOLT (TM) commercial microcomputer, based on the MOS Technology 6502 processor chip, for use in Omega navigation system is evaluated. A computer program was prepared in hand-assembled code to demonstrate receiver operation. The processor provides binary processing with interrupts enabled, a carriage return is given to initialize the teleprinter, and a jump is performed to enter the program loop to wait for an interrupt. The program loop operates continuously testing the interrupt flag. The interrupt routine reads the receiver status word and determines whether the current time-slot is the A slot. If so, the interrupt flag, which is also the data index pointer, is reset to zero. The status word is stored in the status buffer. If the time-slot is not A, the interrupt flag/pointer is incremented by one to index the phase and status to the proper buffer words for later use by the print routine.

Lilley, R. W.↗
NASA NTRS1976

CCD correlation techniques

Two CCD techniques were discussed for performing an N-point sampled data correlation between an input signal and an electronically programmable reference function. The design and experimental performance of an implementation of the direct time correlator utilizing two analog CCDs and MOS multipliers on a single IC were evaluated. The performance of a CCD implementation of the chirp z transform was described, and the design of a new CCD integrated circuit for performing correlation by multiplication in the frequency domain was presented. This chip provides a discrete Fourier transform (DFT) or inverse DFT, multipliers, and complete support circuitry for the CCD CZT. The two correlation techniques are compared.

Hewes, C. R.↗
NASA NTRS1976

Electrostatic discharge in microcircuits

The largest number of electrostatic discharge (ESD) failures have occurred in linear microcircuits employing one or more MOS capacitors. The detection of ESD failures is considered. The phenomena involved in the generation of static charge are examined and a description is provided of approaches which can be used to protect microcircuits from ESD hazards. It is pointed out that ESD failures can virtually be eliminated if the procedural guidelines of protecting static-sensitive devices are implemented and conscientiously observed.

Trigonis, A. C.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55, to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of CMOS and P-MOS devices shielded in front over 2 pi steradian by flat slabs of aluminum of 40, 80, 150, and 300 mils (1.02, 2.04, 3.81, and 7.62 mm) thicknesses, and by a practically infinite shield in the back. Initial results from the CREM experiment are reported. Predictions of radiation damage to CMOS devices are based on standard environment models and computational techniques. Measured space damage is smaller than predicted by about a factor of 2-3 for thin shields but agrees well with predictions for thicker shields. It is not clear at this time how the trapped particle environment models or the computational methods should be modified in order to achieve better agreement between experimental results and predicted damage curves.

Cliff, R. A.↗
NASA NTRS1977

The design and implementation of the Viking mission

The Viking missions that were actually implemented were substantially different from those that were planned prior to arrival at the planet. These differences were not, however, unexpected because the fundamental tenet of the Viking mission operations strategy (MOS) was adaptability. In this paper, this unique 'design for change' strategy is explained in detail with particular emphasis on the way that the strategy allowed the missions to respond to both scientific and engineering surprises. The total result of using such an adaptive strategy is shown in a comparison of the expected mission profiles before Mars encounter and the mission profiles that were actually flown.

Lee, B. G.↗
NASA NTRS1975

Tunnel injection into gate oxide traps

An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co-60 irradiation. The results are related to long-term drift of threshold voltage.

Maserjian, J.↗
NASA NTRS1977

Adaptation of ion beam technology to microfabrication of solid state devices and transducers

It was found that ion beam texturing of silicon surfaces can be used to increase the effective surface area of MOS capacitors. There is, however, a problem with low dielectric breakdown. Preliminary work was begun on the fabrication of ion implanted resistors on textured surfaces and the potential improvement of wire bond strength by bonding to a textured surface. In the area of ion beam sputtering, the techniques for sputtering PVC were developed. A PVC target containing valinomycin was used to sputter an ion selective membrane on a field effect transistor to form a potassium ion sensor.

Topich, J. A.↗
NASA NTRS1977

Loran-C digital word generator for use with a KIM-1 microprocessor system

The problem of translating the time of occurrence of received Loran-C pulses into a time, referenced to a particular period of occurrence is addressed and applied to the design of a digital word generator for a Loran-C sensor processor package. The digital information from this word generator is processed in a KIM-1 microprocessor system which is based on the MOS 6502 CPU. This final system will consist of a complete time difference sensor processor for determining position information using Loran-C charts. The system consists of the KIM-1 microprocessor module, a 4K RAM memory board, a user interface, and the Loran-C word generator.

Nickum, J. D.↗
NASA NTRS1978

Preamplifier Noise in VLF Receivers

Noise specifications for junction field-effect transistors are presented in different ways depending on the particular semiconductor manufacturer. Arithmetic involved in converting these specifications to equivalent RMS noise in microvolts developed at the preamplifier input terminal is reviewed. These methods were useful for estimating the noise performance of high input impedance preamplifiers used with E-field antennas operating in the range of 1 KHz to 10 MHz. Both the JFET MPF-102 transistor and the COS/MOS CA3600 transistor array provided amplification for VLF receivers where the internally generated noise was well below the atmospheric noise level. The CA3600 transistor array provided better performance because of the more symmetrical complementary MOS transistor transfer characteristics than a single N-type biased JFET transistor. The CMOS amplifier resulted in self-compensating gain characteristics over a very wide temperature range from -55 to +125 C.

Burhans, R. W.↗
NASA NTRS1977

Prediction and measurement results of radiation damage to CMOS devices on board spacecraft

Final results from the CMOS Radiation Effects Measurement (CREM) experiment flown on Explorer 55 are presented and discussed, based on about 15 months of observations and measurements. Conclusions are given relating to long-range annealing, effects of operating temperature on semiconductor performance in space, biased and unbiased P-MOS device degradation, unbiased n-channel device performance, changes in device transconductance, and the difference in ionization efficiency between Co-60 gamma rays and 1-Mev Van de Graaff electrons. The performance of devices in a heavily shielded electronic subsystem box within the spacecraft is evaluated and compared. Environment models and computational methods and their impact on device-degradation estimates are being reviewed to determine whether they permit cost-effective design of spacecraft.

Stassinopoulos, E. G.↗
NASA NTRS1978

A complementary DMOS-VMOS IC structure

A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical transconductance. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.

Jhabvala, M.↗