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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Cadmium-Free QD Building Blocks for Human Centric Lighting

This project developed Cd-free quantum dot (QD) downconverters for efficacious human-centric lighting (HCL) light emitting diode (LED) devices. Solid state HCL devices address the lack of light in the cyan wavelength region (460-490 nm) in white LEDs by enhancing the melanopic daylight efficacy ratio (MDER) value. MDER is a metric that indicates the degree to which artificial lighting stimulates nonvisual biological processes in the retina responsible for regulating circadian rhythms compared with natural lighting. The peak sensitivity of melanopsin in the retina is at 479 nm, therefore artificial lighting which can fill the well-known “cyan gap” may improve human health. Due to the Restriction of Hazardous Substances (RoHS) regulations, cadmium-free core/shell/shell QDs are the primary targets for low toxicity, tunable downconverters. Cyan- and red-emitting core/shell/shell QDs were implemented in LED devices toward achieving a brightness of 210 lm/W at 4000 K, CRI 90, and MDER > 0.7. Synthetic development of Cd-free materials yielded cyan InP/ZnS QDs with a photoluminescence quantum yield (PLQY) of ~60% between 480-490 nm, and red InP/ZnSe/(ZnSeS)/ZnS QDs reaching ~80% PLQY at 620-630 nm. We successfully demonstrated that the inclusion of cyan QDs increased the MDER value to ≥0.7, but the brightness of the HCL LED devices was hindered due to low PLQY values. However, upon substitution of the Cd-free cyan QD with a low-Cd QD with >90% PLQY, brightness improved by 25% over the Cd-free device to 179 lm/W. Despite the technical obstacles remaining toward improving emission characteristics and stability of QDs under high flux, we have confirmed the promise of narrow, tunable QD emitters in SSL packages toward the goal of healthy, human-centric lighting.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence

The carrier dynamics in InGaN/GaN light-emitting diodes (LEDs) are directly tied to their efficiency and maximum modulation speed, which are important metrics for solid-state lighting, displays, and optical communication. In this work, we measure the carrier dynamics of a variety of InGaN/GaN LEDs using small-signal electroluminescence methods [1]. A rate equation approach and associated small-signal circuit are used to model carrier injection, recombination in the active region, recombination in the cladding regions, and carrier escape. The model is fit to the measured optical frequency response (S21) and input impedance (S11) of the LEDs to extract the various carrier lifetimes, the carrier density, and the radiative and non-radiative recombination rates. We specifically study planar nonpolar and semipolar LEDs, which show record-high modulation speeds for III-nitride LEDs and present the modulation characteristics of core-shell nanowire-based LEDs. The planar nonpolar m-plane ($101\bar{0}$) micro-LEDs achieve a record-high -3dB modulation bandwidth for a III-nitride LED of 1.5 GHz [2]. The -3dB response of an electrically injected nanowire-based micro-LED with nonpolar facets is also reported, showing a -3dB bandwidth of 1.2 GHz [3]. The high speed is attributed to the shorter carrier lifetime associated with the nonpolar orientation. We also study the carrier dynamics in semipolar ($20\bar{2}\bar{1}$) LEDs for various temperatures [4]. Finally, we present carrier dynamics measurements on commercial-grade c-plane epitaxy for various active region designs, including a wavelength series and a growth quality series. The wavelength series offers insight into the contributions of the quantum confined Stark effect (QCSE) and InGaN material quality on the green gap [5]. The growth quality series investigates the role of non-radiative centers on the LED performance. Extraction of the carrier dynamics using small-signal electroluminescence offers insight into the factors limiting the efficiency and high-speed performance of III-nitride emitters and can be leveraged to ultimately improve the devices.

LEDs, InGaN, electroluminescence, bandwidth, modul↗
DOE OSTI2026

Solutions to Droop and the Green Gap by Novel Carrier Injection

Long-wavelength (green, yellow, red) visible light-emitting diodes (LEDs) have historically been inefficient compared to blue light-emitters in the III-nitrides. This is due to many factors, including poor material quality due to the low growth temperatures required for high Incomposition InGaN quantum wells (QWs), and the polar nature of the III-nitride crystal structure. Spontaneous and piezoelectric polarization in the III-nitrides causes enhanced quantum-confined Stark effect (QCSE), which spatially separates electrons and holes and reduces radiative recombination (ie: light output) from the devices. Polarization in the crystal also induces additional potential barriers that electrons and holes must cross over before entering the QWs where they can recombine to emit light. Both of these polarization effects worsen as emission wavelength increases, making blue III-nitride LEDs are the most efficient and red III-nitride LEDs the least efficient. The focus of this project has been solving the latter polarization-related issue through the implementation of V-defects in long wavelength LEDs. V-defects are morphological defects which are commonly observed in c-plane III-nitrides. They are observed as hexagonal pyramid-shaped depressions on the c-plane surface, with six semipolar sidewalls. They typically form at the apex of threading dislocations (TDs) under conditions of kinetically-limited growth and low growth-temperature. They were initially thought to be detrimental to LED performance and much early work focused on eliminating them entirely from III-nitride devices. However, over the past decade work has emerged that indicate that they can improve LED performance by allowing electrons and holes to bypass the polarization-induced barriers present in the c-plane and directly enter the QWs of an LED. This is due to the semipolar nature of the V-defect sidewall: these sidewalls are thin and lack the polarization-induced barriers which prevent carriers easily moving between layers. V-defects have since been determined to be an efficient avenue by which to inject electrons and holes into the c-plane QWs where they can recombine to emit light. Throughout this project we have explored lateral injection through a variety of methods: simulation (Task 2), epitaxial growth of V-defect and non-V-defect LEDs (Tasks 1, 3, 4, 5, 6), and advanced characterization methods (Task 7). All tasks have been completed. A description of each task completed follows from this section.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Let's Get Greedy: The L-Prize Invites Innovators to 'Have It All'

LEDs have arrived. They’re long-lasting, energy-efficient, and priced competitively with the products they’re replacing. Case closed and let’s move on, right? And yet… transformative lighting has the capacity do more, with excellent energy and application efficiency, data-driven functionality, material sustainability, and the ability to make buildings better places to work, live, learn, and heal – for people in all communities. This article on the DOE L-Prize invites competitors to participate in the $12.2 million L-Prize competition. The competition sets ambitious innovation goals for efficacy, quality of light, connectivity, material sustainability, and diversity, equity, and inclusion. LED lighting offers the opportunity to address all of these - to "have it all". The article will be published in the August edition of Lighting Design and Application (LD&A) magazine.

LED Lighting, Efficacy, Lighting Quality, Connecte↗
DOE OSTI2025

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗
DOE OSTI2022

Evaluation of an LED Simulator for Single- and Multi-Junction PV Cell Performance Testing

We present the evaluation of a solar simulator comprising a Light Emitting Diode (LED) array as its light source. While multiple applications can be envisioned for such a light source, here we focus on its use for performance testing of solar cells at Standard Test Conditions. With this in mind, we present characterization of the spatial uniformity of the irradiance and its temporal stability as well as the spectral range and spectral class. For a multisource simulator, the spectral uniformity across the test plane should also be evaluated and we discuss a method for performing this evaluation that is well suited to a solar cell performance testing application. One major advantage of this simulator is the ability to easily adjust the spectral output as needed in multijunction PV cell measurements and we also discuss this application here.

LED↗
DOE OSTI2023

Spatially Adaptive Tunable Lighting Control System with Expanded Wellness and Energy Saving Benefits

Lighting design is becoming increasingly complex, including active dimming for energy savings and spectral tuning for human wellbeing. Modern commercial lighting control systems are already difficult to use, and maintain, and even with so-called Smart Lighting, optimizing light settings is rapidly exceeding the capabilities of direct human control, limiting the adoption of lighting control systems. The growing importance of Occupancy Centric Controls (OCC) for advanced building management systems can be applied to the development of autonomous lighting system controls needed to drive the adoption of advanced lighting controls for improved adaptive “sculpted illumination” for both greater energy savings and broader human wellbeing perspectives. This project, led by Rensselaer Polytechnic Institute, entitled “Spatially adaptive tunable lighting control system with expanded wellness and energy saving benefits” will develop and test an entirely new platform for automated optimized lighting design and control that requires little or no human engagement, yet contours lighting profiles automatically to minimize lighting energy use. We call this approach to lighting control “dynamic light sculpting” since the right amount of illumination is automatically delivered to occupants in real time. Since the system uses new, privacy-preserving occupant position and pose detection technologies developed by Rensselaer for broad OCC building applications, the control system will analyze how to deliver the right amount of the right type of illumination only where and when it is needed based these OCC platforms. To create these powerful autonomous lighting control platforms, the project will integrate evolving augmented reality (AR) and virtual reality (VR) tools with sophisticated lighting and interior design toolkits to create interactive lighting design and control simulators. Using the quickly growing paradigm of digital twins, these tools will integrate light fixture properties, occupancy sensor data, interior design data, and lighting specifications to accurately visualize how various design concepts interact with simulated yet realistic human activities that occur in commercial office buildings of various types. These advanced digital twin design and simulation tools will be combined with a new class of digitally-programmable LED lighting fixtures that can dynamically change the spectral content and direction of light emission. When fully integrated, the new autonomous lighting control system will take all of the guesswork out of optimizing light quality while minimizing energy consumption. Digital twin tools will simplify the design, installation, commissioning, operation, and maintenance of future energy-efficient lighting systems. It should be possible to reduce lighting energy costs from 40% to 70% with OCC based dynamic light sculpting systems. The work will be led by the Center for Lighting Enabled Systems and Applications (LESA) and the Center for Architectural Science and Ecology (CASE), both at Renssealer Polytechnic Institute; Lumileds, a global leader in the development of advanced LED systems; and HKS, a leading global architecture design firm. This interdisciplinary project team’s experience includes all of the design simulation tools, VR/AR digital twin visualization technology, advanced occupancy sensing technology, and complex control system design capabilities that will revolutionize lighting design and control technology to autonomously deliver high-quality lighting that improves human health and wellbeing while simultaneously maximizing lighting energy savings.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS2017

Lighting the Way to Mars

Transforming the Martian atmosphere into something suitable for plant life would require a scientific feat that we currently do not possess the means to achieve, but indoor agriculture with LEDs could be just the alternative. Previous research has shown that light recipes provided by LEDs can alter the growth and nutrition of a plant based on wavelengths emitted, and crops grown in space aboard the International Space Station would respond similarly. By testing various LED light recipes such as ratios of red, green, blue (RGB) wavelengths, along with white (W) and far red (FR) on flight approved crops, harvest data were analyzed for trends to determine best light conditions for plant growth. Crops of Outredgeous Lettuce, Tokyo Bekana Chinese cabbage, and Mizuna were grown for 28 days with harvests on 14, 21, and 28 days after planting. By collecting fresh mass, shoot dimensions, chlorophyll estimates, leaf areanumber, and dry mass, the overall differences per light treatment were compared. For Outredgeous lettuce, a recipe of W+FR LEDs yielded increases in biomass and size compared to RB LEDs alone. However, the RB recipe resulted in smaller plants with higher concentrations in phytonutrients. Overall, the RGB + FR treatment with ratios similar to sunlight provided a promising balance of optimized biomass, size, and nutrient content. The Chinese cabbage, which was grown under various ratios of W and B light, showed no differences between recipes, and exhibited similar physiological responses regardless of the light recipes that were tested. The Mizuna studies are still ongoing. Crops for ISS chambers and astronaut consumption are targeted based on biomass, physiology, and for human psychological benefit. The goal of this research is to provide light recipe recommendations for space crops that have been thoroughly tested on the ground. These results will serve a major benefit for astronauts growing crops in the Advanced Plant Habitat currently in orbit aboard the ISS. Future research studies include using LEDs to mimic and provide the solar spectrum in a controlled environment to take the next step in further optimizing crops for space.

Barnwell, Payton L.↗
NASA NTRS2004

Green-light supplementation for enhanced lettuce growth under red- and blue-light-emitting diodes

Plants will be an important component of future long-term space missions. Lighting systems for growing plants will need to be lightweight, reliable, and durable, and light-emitting diodes (LEDs) have these characteristics. Previous studies demonstrated that the combination of red and blue light was an effective light source for several crops. Yet the appearance of plants under red and blue lighting is purplish gray making visual assessment of any problems difficult. The addition of green light would make the plant leave appear green and normal similar to a natural setting under white light and may also offer a psychological benefit to the crew. Green supplemental lighting could also offer benefits, since green light can better penetrate the plant canopy and potentially increase plant growth by increasing photosynthesis from the leaves in the lower canopy. In this study, four light sources were tested: 1) red and blue LEDs (RB), 2) red and blue LEDs with green fluorescent lamps (RGB), 3) green fluorescent lamps (GF), and 4) cool-white fluorescent lamps (CWF), that provided 0%, 24%, 86%, and 51% of the total PPF in the green region of the spectrum, respectively. The addition of 24% green light (500 to 600 nm) to red and blue LEDs (RGB treatment) enhanced plant growth. The RGB treatment plants produced more biomass than the plants grown under the cool-white fluorescent lamps (CWF treatment), a commonly tested light source used as a broad-spectrum control.

Non-NASA Center↗
NASA NTRS1992

Importance of 'blue' photon levels for lettuce seedlings grown under red-light-emitting diodes

Light-emitting diodes (LEDs) with high-intensity output are being studied as a photosynthetic light source for plants. High-output LEDs have peak emission at approximately 660 nm concentrated in a waveband of +/- 30 nm. Lettuce (Lactuca sativa Grand Rapids') seedlings developed extended hypocotyls and elongated cotyledons when grown under these LEDs as a sole source of irradiance. This extension and elongation was prevented when the red LED radiation was supplemented with more than 15 micromoles m-2 s-1 of 400- to 500-nm photons from blue fluorescent lamps. Blue radiation effects were independent of the photon level of the red radiation.

NASA Program CELSS↗
DOE OSTI2021

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

42 ENGINEERING↗
DOE OSTI2022

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which has enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport mechanisms across InGaN/GaN heterostructures in these devices are not well explained. Fixed polarization sheet charges at InGaN/GaN interfaces lead to large interface dipole charges, which create large potential barriers to overcome. One-dimensional models for transport across such heterostructures predict turn-on voltages that are significantly higher than that found in real devices. As a result, conventional models for transport cannot predict the performance of new designs such as for longer wavelength LEDs or for multi-quantum well LEDs. In this work, we show that incorporating low and high indium compositions within quantum wells at the submicrometer scale can provide an accurate prediction of the characteristics of GaN/InGaN light emitting diodes.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Diodes stabilize LED output

Small-signal diodes are placed in series with light-emitting diodes (LED's) to stabilize LED output against temperature fluctuations. Simple inexpensive method compensates for thermal fluctuations over a broad temperature range. Requiring few components, technique is particularly useful where circuit-board space is limited.

Deters, R. A.↗
NASA NTRS2016

Comparative Study of Lettuce and Radish Grown Under Red and Blue LEDs and White Fluorescent Lamps

Growing vegetable crops in space will be an essential part of sustaining astronauts during long-range missions. To drive photosynthesis, red and blue light-emitting diodes (LEDs) have attracted attention because of their efficiency, longevity, small size, and safety. In efforts to optimize crop yield, there is also recent interest in analyzing the subtle effects of additional wavelengths on plant growth. For instance, since plants often look purplish gray under red and blue LEDs, the addition of green light allows easy recognition of disease and the assessment of plant health status. However, it is important to know if wavelengths outside the traditional red and blue wavebands have a direct effect on enhancing or hindering the mechanisms involved in plant growth. In this experiment, a comparative study was performed on two short cycle crops of red romaine lettuce (Lactuca sativa cv. "Outredgeous") and radish (Raphanus sativa cv. 'Cherry Bomb'), which were grown under two light treatments. The first treatment being red (630 nm) and blue (450 nm) LEDs alone, while the second treatment consisted of daylight tri-phosphor fluorescent lamps (CCT approximately 5000 K) at equal photosynthetic photon flux (PPF). The treatment effects were evaluated by measuring the fresh biomass produced, plant morphology and leaf dimensions, leaf chlorophyll content, and adenosine triphosphate (ATP) within plant leaf/storage root tissues.

Food Production↗
DOE OSTI2024

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

The efficiency of high-power operation of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on the realization of uniform hole distribution between the QWs. In long wavelength InGaN/GaN QW LEDs, the thermionic interwell hole transport is hindered by high GaN barriers. However, in polar LED structures, these barriers may be circumvented by the lateral hole injection via semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects. The efficiency of such carrier transfer depends on the transport time since transport in the semipolar QWs is competed by recombination. In this work, we study the carrier transfer from the semipolar to polar QWs by time-resolved photoluminescence in long wavelength (green to red) LEDs. We find that the carrier transfer through the semipolar QWs is fast, a few tens of picoseconds with the estimated room temperature ambipolar diffusion coefficient of ∼5.5 cm 2 /s. With diffusion much faster than recombination, the hole transport from the p-side of the structure to the polar QWs should proceed without a substantial loss, contributing to the high efficiency of long wavelength GaN LEDs.

Crystallographic defects↗
DOE OSTI2021

Incorporation of Alloy Fluctuation Effects for Accurate Modeling of GaN/InGaN/GaN Light Emitting Diodes

III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade[1]. To improve the device performance of LEDs, it is imperative to understand the carrier transport, and how it affects forward voltage, extraction efficiency, and other LED characteristics. Despite the wide application of GaN LEDs, transport mechanisms across InGaN/GaN heterostructures in these devices are not well-explained. Fixed polarization sheet charges at InGaN/GaN interfaces lead to large interface dipole charges, which creates large potential barriers to overcome. One-dimensional models for transport across such heterostructures predict turn-on voltages that are significantly higher than that found in real devices. As a result, conventional models for transport cannot be used to design more efficient devices, or to understand the underlying transport and recombination phenomena in InGaN/GaN light emitting diodes. In this work, we show that incorporating low and high Indium compositions within quantum wells at the submicron scale can provide accurate prediction of the characteristics of GaN/InGaN light emitting diodes.

36 MATERIALS SCIENCE↗
NASA NTRS1995

Technologies for Maintaining Animals in Space: Lighting, Air Quality, Noise, Food and Water

In the terrestrial environment multiple time cues exist. Zeitgebers have been identified and studied for their ability to convey temporal information to various physiological systems, In the microgravity experiment it is necessary to define time cues within the flight hardware prior to flight. During flight if changes in the Circadian System (e.g., mean, phase angle, period) occur this would indicate that the gravity vector is important relative to biological timing. This presentation is concerned with the environmental parameters to support rodent experiments in microgravity. The Animal Enclosure Module (AEM) provides solid food bars and water via lixits ad libitum. Flight animals (Sprague-Dawley rats, 60 - 300g) when compared to ground controls show similar growth (mean growth per day, g +/- SD; flight 5.4 +/- 2.0, ground 5.9 +/- 2.1). Current AEMs use incandescent lighting (approx. 5 Lux). Light emitting diode (LED) arrays are being developed that provide a similar light environment as cool-white fluorescent sources (40 Lux). In ground based tests (12L:12D), these arrays show normal circadian entrainment (Tau = 24.0) with respect to the behavioral responses. measured (drinking, eating, gross locomotor activity). A newly developed ultra high efficiency filter system can entrap all feces, urine and odors from 6 rats for 24 days. Maximum sound level exposure limits (per octave band 22 Hz - 179 kHz) have been established. The AEM will effectively support animal experiments in microgravity.

Winget, C. M.↗