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NASA NTRS1987

Recent developments in indium phosphide space solar cell research

Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n+p and p+n configurations with total area efficiencies of 17.9 and 15.9% (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AMO efficiency of 20.5% was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 the the 16th power/cu cm respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n+p cells are more radiation resistant at higher fluences than the p+n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

Brinker, David J.↗

NASA NTRS1986

Radiation damage in proton irradiated indium phosphide solar cells

Indium phosphide solar cells exposed to 10 MeV proton irradiations were found to have significantly greater radiation resistance than either GaAs or Si. Performance predictions were obtained for two proton dominated orbits and one in which both protons and electrons were significant cell degradation factors. Array specific power was calculated using lightweight blanket technology, a SEP array structure, and projected cell efficiencies. Results indicate that arrays using fully developed InP cells should out-perform those using GaAs or Si in orbits where radiation is a significant cell degradation factor.

Weinberg, I.↗

NASA NTRS1987

Simulated space environment effects on the optical properties of poly(arylene ethers)

Results are reported from a study of the stability of poly(arylene ethers) formed in a reaction of 1,3 -bis(4-chlorobenzoyl)benzene and various bisphenols after experiencing long-term exposure to space conditions. Transparent poly(arylene ethers) films were subjected to separate electron and UV bombardments, as were polysulfone and Kapton films for comparisons. The order of exposure to the two types of radiation was reversed for two sample populations. The optical properties and glass transition temperatures of the samples were determined after irradiation. The poly(arylene ethers) films exhibited good resistance to the electron radiation but suffered severe degradation in the UV environment. The loss of optical transmissivity was proportional to the UV radiation dose.

Sykes, George F.↗

NASA NTRS1987

Recent developments in indium phosphide space solar cell research

Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n + p and p + n configurations with total area efficiencies of 17.9 and 15.9 percent (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AM0 efficiency of 20.5 percent was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 to the 16th power/cu cm, respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n + p cells are more radiation resistant at higher fluences than the p + n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

Brinker, David J.↗

NASA NTRS2010

The Search for Interstellar Sulfide Grains

The lifecycle of sulfur in the galaxy is poorly understood. Fe-sulfide grains are abundant in early solar system materials (e.g. meteorites and comets) and S is highly depleted from the gas phase in cold, dense molecular cloud environments. In stark contrast, sulfur is essentially undepleted from the gas phase in the diffuse interstellar medium, indicating that little sulfur is incorporated into solid grains in this environment. It is widely believed that sulfur is not a component of interstellar dust grains. This is a rather puzzling observation unless Fe-sulfides are not produced in significant quantities in stellar outflows, or their lifetime in the ISM is very short due to rapid destruction. Fe sulfide grains are ubiquitous in cometary samples where they are the dominant host of sulfur. The Fe-sulfides (primarily pyrrhotite; Fe(1-x)S) are common, both as discrete 0.5-10 micron-sized grains and as fine (5-10 nm) nanophase inclusions within amorphous silicate grains. Cometary dust particles contain high abundances of well-preserved presolar silicates and organic matter and we have suggested that they should contain presolar sulfides as well. This hypothesis is supported by the observation of abundant Fe-sulfides grains in dust around pre- and post-main sequence stars inferred from astronomical spectra showing a broad 23 micron IR feature due to FeS. Fe-sulfide grains also occur as inclusions in bona fide circumstellar amorphous silicate grains and as inclusions within deuterium-rich organic matter in cometary dust samples. Our irradiation experiments show that FeS is far more resistant to radiation damage than silicates. Consequently, we expect that Fe sulfide stardust should be as abundant as silicate stardust in solar system materials.

Keller, Lindsay P.↗

NASA NTRS2018

Effect of Additives: Gamma-Ray Sensors Based on Ionizing Organic Nanocomposites

We have developed ionizing organic-based composites which have demonstrated great promise for radiation sensing. Nickel oxide has been proven as an active material for detecting high energy radiation. The oxidation state of unusual oxides such as nickel oxide in nanocomposites of ionizing organics changes much faster than thin film or bulk, and hence increases the sensitivity for radiation sensing. The resistivity of the oxide composite increases following sequential irradiation processes because of the decrease in holes' concentration. In this paper, we will present the effect of additional oxidizing agent on the morphology, processing and sensing of gamma-rays by oxides - urea based nanocomposites. It was observed that addition of MnO2 decreases the sensitivity. However, it recovers to original properties after irradiation much faster than undoped composites.

Vishall Dayal↗

NASA NTRS1993

Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells

Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence.

Jain, Raj K.↗

DOE OSTI2020

Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors

Phosphorene-based field effect transistor (FET) structures were fabricated to study the gas- and photo-detection properties of phosphorene. The interplay between device performance and environmental conditions was probed and analyzed using in situ transport measurements. The device structures were exposed to different chemical and light environments to understand how they perform under different external stimuli. For the gas/molecule detection studies, inert (Ar), as well as, oxidizing (N 2 O), and reducing (H 2 and also N 2 H 4 ) agents were selected. The FET structure was exposed to these different gases, and the effect of each gas on the device resistance was measured. The study showed varying response towards different molecules. Specifically, no significant resistance change was observed upon exposure to Ar, while H 2 and N 2 H 4 were found to decrease the resistance and N 2 O had the opposite effect resulting in an increase in resistance. This work is the first demonstration for the detection of N 2 H 2 and N 2 O using a phosphorene-based system. These phosphorene-based FET structures were also found to be sensitive to light exposure. When such structure was irradiated with light, the current modulation was lost. The observed resistance changes can be explained as a result of the modulation of the Schottky barrier at the phosphorene-electrical contact interface due to the adsorbed molecules and charge transfer, and/or photo-induced carrier generation. Furthermore, the results were consistent with the transfer characteristics of V ds v s . V g .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1973

Effects of space vacuum and solar ultraviolet irradiation (254 nanometers) on the colony forming ability of Bacillus subtilis spores

Bacillus subtilis spores are highly resistant to harsh environments. Therefore, in the Apollo 16 Microbial Response to Space Environment Experiment (M191), these spores were exposed to space vacuum or solar ultraviolet irradiation, or both, to estimate the change of survival for terrestrial organisms in space. The survival of the spores was determined in terms of colony-forming ability. Comparison of the flight results with results of simulation experiments on earth applying high vacuum or ultraviolet irradiation, or both, revealed no remarkable difference. Simultaneous exposure to both these space factors resulted in a synergistic effect (that is, an ultraviolet supersensitivity). Therefore, the change of survival in space is assumed to depend on the degree of protection against solar ultraviolet irradiation.

Buecker, H.↗

NASA NTRS1989

Radiation resistance studies of amorphous silicon films

Hydrogenated amorphous silicon thin films were irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15 cm(-2). The films were characterized using photothermal deflection spectroscopy and photoconductivity measurements. The investigations show that the radiation introduces sub-band-gap states 1.35 eV below the conduction band and the states increase supralinearly with fluence. Photoconductivity measurements suggest the density of states above the Fermi energy is not changing drastically with fluence.

Woodyard, James R.↗

DOE OSTI2020

Investigation of the irradiation effects in additively manufactured 316L steel resulting in decreased irradiation assisted stress corrosion cracking susceptibility

While additive manufacturing (AM) is an area of increasing interest to the nuclear industry, there are significant research and development needs prior to successful implementation of additively manufactured components into reactors. AM steel behaves differently than traditional wrought material, as has been observed in numerous mechanical testing studies. The nuclear industry must also understand the material response to irradiation. This work examines the irradiation damage and the irradiation assisted stress corrosion cracking behavior (IASCC) of both proton irradiated AM and wrought 316L steel. For IASCC testing, specimens were strained to 4% plastic strain in a simulated boiling water reactor environment (288°C, 0.2 µS/cm). Transmission and scanning electron microscopy, confocal microscopy, and X-ray computed tomography were used to examine coupons of the material as well as tensile bars used in the IASCC testing. This work found that the wrought 316L was more susceptible to IASCC than the AM steel, however, some IASCC was observed in the AM steel when tested with the tensile axis parallel to the build direction. Electron microscopy has shown significantly fewer radiation induced voids formed in the AM steel. While the pre-existing pore network in the AM steel may act as a sink to point defects, this is not expected to be the major factor in the reduced swelling observed in the AM steel. The lower density of radiation induced voids was expected to contribute to the IASCC resistance by decreasing the localization of deformation in the irradiated specimens, however, severity of localized deformation in AM steel, measured in dislocation channel spacing and height, was similar or more severe to that found in wrought. In conclusion, the presence of severe cracking in the wrought specimens did not allow for a direct comparison of localized deformation severities between the AM and wrought steel.

Additive manufacturing↗

DOE OSTI2023

Phase composition of polycrystalline HfNx (0.45 ≤ x ≤ 1.60) and effects of low-energy ion irradiation on microstructure, texture, and physical properties

We have investigated the phase composition of HfNx as a function of x and the effects of low-energy ion irradiation on the microstructure and physical properties of polycrystalline layers grown on SiO2 at 350 °C by ultrahigh vacuum reactive dc magnetron sputtering of Hf in mixed N2/Ar discharges. X-ray diffraction and Rutherford backscattering spectrometry results show that the phases obtained in polycrystalline HfNx layers with increasing x are hcp-structure α-Hf:N (x ≲ 0.6); multiphase mixtures consisting of α-Hf, NaCl-structure δ-HfN, rhombohedral ɛ-Hf3N2, and/or ζ-Hf4N3 (0.6 ≲ x ≲ 0.9); δ-HfN single phase (0.9 ≲ x ≲ 1.3); and mixtures of δ-HfN and higher nitrides (x ≳ 1.3). HfNx layers with 0.9 ≲ x ≲ 1.2 grown under mild ion irradiation (incident ion energy Ei ≃ 7 eV and ion-to-Hf flux ratios Ji/JHf = 1−3) are underdense with mixed orientation, low in-plane stress, and rough surface morphology due to limited adatom mobilities resulting in kinetic roughening and atomic shadowing during film growth. However, the use of intense ion irradiation (Ei = 25 eV and Ji/JHf = 4−20) results in HfNx layers, which are fully dense with strongly 111-oriented texture, compressive in-plane stress, and smooth surfaces due to ion irradiation enhanced adatom surface mobilities. In addition, the latter films have lower resistivity and higher hardness. For stoichiometric δ-HfN layers, ρ decreases from 69.7 to 35.2 μΩ cm and H increases from 22.1 to 27.4 GPa, with increasing ion-irradiation intensity. However, for HfNx layers with 1.2 ≲ x ≲ 1.6, the correspondingly higher steady state atomic N surface coverages during deposition alter growth kinetics in favor of 001 texture with a fully dense structure and compressive in-plane stress.

Materials Science↗

DOE OSTI2020

Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Inverted Metamorphic AlGaInAs/GaInAs Tandem Thermophotovoltaic Cell Designed for Thermal Energy Grid Storage Application

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

25 ENERGY STORAGE↗

DOE OSTI2021

DOE-GENIORS Dynamic Irradiation Testing

As part of the homogeneous actinides recycling strategy, the EURO-GANEX process is one of the most promising options to achieve the goal of minor actinides recovery. Improvements made to EURO-GANEX system have resulted in the emergence of the so-called New EURO-GANEX process, where the composition of the solvent has been modified by replacing TODGA and DMDOHEMA with cis-mTDDGA in the organic phase and SO3-Ph-BTP with PyTri-Diol in the aqueous phase in order to resolve important issues. The objective of this work is twofold: evaluate the gamma radiolytic resistance of the new EURO-GANEX process by dynamic irradiation conditions simulating the three main steps of the process, and validate the design of CIEMAT Náyade, CEA Marcel and INL irradiation loop devices since each of them mimics different aspects of the real process. Náyade and the INL loops could irradiate the organic and aqueous phases together, whereas in the CEA loop, the irradiated solvent is recycled continuously inside a platform with several stages of mixer-settlers containing aqueous flows simulating the three main steps of the process. The extraction performances and changes in the composition of the solvent have been analyzed during the irradiation experiment by different techniques: gamma spectrometry and ICP-MS/OES for cations or radioactive tracer extraction, and HPLC-MS to identify and quantify the degradation compounds. Despite some differences between the three-irradiation facilities, this inter-institutional study shows that these three comparative tools provide similar trends in the radiolytic stability of a liquid-liquid extraction system. Favourable extraction results for the different steps are obtained according to the static irradiation studies found in literature. However, the degradation of cis-mTDDGA is appreciable leading to degradation compounds, some of which form precipitates and produce important changes in viscosity, important aspects that must be addressed prior to the successful industrial application of the new EURO-GANEX process.

38 - RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCL↗

DOE OSTI2021

Unusual Metal–Organic Framework Topology and Radiation Resistance through Neptunyl Coordination Chemistry

A Np(V) neptunyl metal–organic framework (MOF) with rod-shaped secondary building units was synthesized, characterized, and irradiated with γ rays. Furthermore, single-crystal X-ray diffraction data revealed an anionic framework containing infinite helical chains of actinyl–actinyl interaction (AAI)-connected neptunyl ions linked together through tetratopic tetrahedral organic ligands (NSM). NSM exhibits an unprecedented net, demonstrating that AAIs may be exploited to give new MOFs and new topologies. To probe its radiation stability, we undertook the first irradiation study of a transuranic MOF and its organic linker building block using high doses of γ rays. Diffraction and spectroscopic data demonstrated that the radiation resistance of NSM is greater than that of its linker building block alone. Approximately 6 MGy of irradiation begins to induce notable changes in the long- and short-range order of the framework, whereas 3 MGy of irradiation induces total X-ray amorphization and changes in the local vibrational bands of the linker building block.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion-irradiated VO 2 thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO 2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs nonthermally, well below the transition temperature. Here, the results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

McLaughlin, Nathan J.↗

DOE OSTI2022

Radiation effects induced by the energetic protons in 8x8x32 mm3 CdZnTe detectors

We report CdZnTe (CZT) detectors have been used in the past and are being actively considered for future gamma-ray space telescopes. One of the challenges of operating CZT detectors in low Earth orbit is radiation damage caused by energetic protons. Previous studies concluded that fluences of 10 8 -10 9 p/cm 2 are sufficient to cause shifting of peak positions and degradations of energy resolution. Degradation of detectors after proton irradiation has been extensively investigated to determine their radiation resistance limits and performance recovering procedures for their applications in space and nuclear nonproliferation. Here we present the study of radiation effects induced by 100 MeV protons in 3-cm long CdZnTe detectors that we recently proposed for the gamma-ray telescope GECCO. The goal this study is to evaluate the feasibility of using such long CZT detectors in future space missions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗