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All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Pallasites - Metal composition, classification and relationships with iron meteorites

A comparative study was conducted of the metal composition of 34 pallasites in order to shed further light on the origin of these meteorites. Concentrations of Au, As, Co, Ga, Ge, Ir, Ni, and W in pallasitic metal were determined. Most pallasites are found to have similar compositions indicating a close genetic relationship, and are designated as main group. The Eagle Station Trio is unrelated to the main group as indicated by higher Ni, Ge, and Ir and lower As, Au, and Ga contents in the metal, and olivine richer in Fe and Sc and poorer in Mg and Mn. The trio of Springwater, Rawlinna and Phillips County have metal compositions appropriate to high-Ni main group members, but their fayalite contents suggest they are not closely related to it. Pavlodar and Glorieta Mountain appear to be unique pallasites, and Brenham an anomalous main group member. Krasnoyarsk is classified as a main group member. Main group pallasites have metal compositions which overlap those of IIIAB iron meteorites on a Ga-Ge plot, and they have similar Au, As, Cr, Ir, Ni and W contents to high-Ni IIIAB irons.

Scott, E. R. D.↗
NASA NTRS1978

Progress towards high efficiency polycrystalline thin-film GaAs AMOS solar cells

Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.

Yeh, Y. C. M.↗
NASA NTRS1981

High-efficiency thin-film GaAs solar cells, phase2

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Yeh, Y. C. M.↗
NASA NTRS1980

Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques

GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.

Yeh, Y. C. M.↗
NASA NTRS1982

Containerless undercooling and solidification of bulk metastable Nb3Ge alloys

Experiments using containerless undercooling and low-gravity solidification of Nb(1-x)Ge(x) alloys for x=0.13-0.27 have been carried out in a 32-m drop-tube apparatus to study the feasibility of forming metastable Nb3Ge in bulk form. It is found that bulk samples (2-3 mm diam) of Nb-Ge alloys with 18-22% Ge can be undercooled by large amounts (300-500 K) and solidified in a containerless environment. Subsequent quenching of the solidified samples in oil helps preserve the metastable A-15 phase by removing the latent heat of fusion and quickly cooling the samples to a stable temperature below 1000 C. Even at an undercooling of less than 100 K, the superconducting transition temperature of the material is enhanced over the cast material by about 1 K.

Lacy, L. L.↗
NASA NTRS1981

Epitaxial thin film GaAs solar cells using OM-CVD techniques

A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.

Stirn, R. J.↗
NASA NTRS1983

Experimental investigations of trace element fractionation in iron meteorites. II - The influence of sulfur

The partitioning of Ir, Ge, Ga, W, Cr, Au, P, and Ni between solid metal and metallic liquid is investigated as a function of temperature and the S-concentration of the metallic liquid. The partition coefficients for siderophile elements, such as Ir, W, Ga, and Ge, are found to increase by factors of 10-100 as the S-concentration of the metallic liquid increases from 0-30 wt percent. Partition coefficients for other siderophile elements, such as Ni, Au, and P, increase by factors of only 2-3. In contrast, a decrease is seen in the partition coefficients for the more chalcophile element Cr. These experimentally determined coefficients are used in conjunction with a fractional crystallization model to reproduce the geochemical behavior of Ni, P, Au, and Ir during the magmatic evolution of groups IIAB, IIIAB, IVA and IVB iron meteorites. The mean S-concentration for each group increases in the order IVB, IVA, IIIAB, IIAB, which is in accordance with cosmochemical prediction. However, the geochemical behavior of Ge, Ga, W, and Cr cannot be reproduced in an internally consistent way. It is concluded that the magmatic histories of these iron meteorite groups are more complex than has been generally assumed.

Jones, J. H.↗
NASA NTRS1984

Comparison of full-scale engine and subscale model performance of a mixed flow exhaust system for an energy efficient engine (E3) propulsion system

A full scale engine test of the NASA/General Electric Company (GE) Energy Efficient Engine (E3) was conducted to demonstrate the E3 engine concept and evaluate its performance. The test program, performed at the GE outdoor engine test facilities in Peebles, OH, included a detailed evaluation of the total pressure and temperature profiles at the exit of the mixed flow exhaust system to determine its mixing effectiveness. Subscale model tests of the same mixed flow exhaust system had been previously conducted at FluiDyne Engineering Corporation in Minneapolis, Minnesota as part of the GE E3 mixer aerodynamic technology development program. The scale model and full scale engine nozzle exit survey data and the calculated mixing effectiveness are compared and discussed. Results indicate the full scale engine mixing effectiveness to be five percent higher than the scale model as a result of a geometric difference and higher turbulence levels in the engne exhaust flowfield.

Kuchar, A. P.↗
NASA NTRS1983

Sublimation measurements and analysis of high temperature thermoelectric materials and devices

High temperature thermoelectric device sublimation effects are compared for rare earth sulfides, selenides, and state-of-the-art Si-Ge alloys. Although rare earth calcogenides can potentially exhibit superior sublimation characteristics, the state-of-the-art Si-Ge alloy with silicon nitride sublimation-inhibitive coating has been tested to 1000 C. Attention is given to the ceramic electrolyte cells, forming within electrical and thermal insulation, which affect leakage conductance measurements in Si-Ge thermoelectric generators.

Shields, V.↗
NASA NTRS1984

Design concept definition study for an improved shuttle waste collection subsystem

A no-risk approach for developing an Improved Waste Collection Subsystem (WCS) for the shuttle orbiter is described. The GE Improved WCS Concept builds on the experience of 14 Shuttle missions with over 400 man-days of service. This concept employs the methods of the existing flight-proven mature design, augmenting them to eliminate foreseen difficulties and to fully comply with the design requirements. The GE Improved WCS Concept includes separate storage for used wipes. Compaction of the wipes provides a solution to the capacity problem, fully satisfying the 210 man-day storage requirement. The added feature of in-flight serviceable storage space for the wipes creates a variable capacity feature which affords redundancy in the event of wipes compaction system failure. Addition of features permitting in-flight servicing of the feces storage tank creates a variable capacity WCS with easier post-flight servicing to support rapid turnaround of the Shuttle orbiter. When these features are combined with a vacuum pump to evacuate wipes and fecal storage tanks through replaceable odor/bacteria filters to the cabin, the GE Improved WCS satisfies the known requirements for Space Station use, including no venting to space.

Source record↗
NASA NTRS1985

Instrumental background in balloon-borne gamma-ray spectrometers and techniques for its reduction

Instrumental background in balloon-borne gamma-ray spectrometers is presented. The calculations are based on newly available interaction cross sections and new analytic techniques, and are the most detailed and accurate published to date. Results compare well with measurements made in the 20 keV to 10 MeV energy range by the Goddard Low Energy Gamma-ray Spectrometer (LEGS). The principal components of the continuum background in spectrometers with GE detectors and thick active shields are: (1) elastic neutron scattering of atmospheric neutrons on the Ge nuclei; (2) aperture flux of atmospheric and cosmic gamma rays; (3) beta decays of unstable nuclides produced by nuclear interactions of atmospheric protons and neutrons with Ge nuclei; and (4) shield leakage of atmospheric gamma rays. The improved understanding of these components leads to several recommended techniques for reducing the background.

Gehrels, N.↗
NASA NTRS1985

Investigation of superlattice device structures

This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers.

Gergis, I. S.↗
NASA NTRS1985

Analysis of segregation trends observed in iron meteorites using measured distribution coefficients

Fe-Ni alloys of meteoritic composition were solidified by a plane front solidification technique. Distribution coefficients of Ni, P, Ir, Ge, and Cu were determined from the composition data of the plane front solidified alloys. Equations that describe the distribution coefficients (P, Ni, Ir, Ge, and Cu) as a function of S and P content as well as S to P ratio were used to calculate solute partitioning between solid and liquid during the solidification of IIAB, IIIAB, and IVA parent bodies. The calculated P versus Ni, Ir versus Ni, Ge versus Ni, and Cu versus Ni trends are in good agreement with the observed meteorite data for each chemical group. It is concluded that each chemical group formed as a single molten pool in a parent body and that solute partitioning that occurred during solidification is responsible for the observed compositional trends within a single meteorite group.

Sellamuthu, R.↗
NASA NTRS1988

Pyro shock simulation: Experience with the MIPS simulator

The Mechanical Impulse Pyro Shock (MIPS) Simulator at GE Astro Space Division is one version of a design that is in limited use throughout the aerospace industry, and is typically used for component shock testing at levels up to 10,000 response g's. Modifications to the force imput, table and component boundary conditions have allowed a range of test conditions to be achieved. Twelve different designs of components with weights up to 23 Kg are in the process or have completed qualification testing in the Dynamic Simulation Lab at GE in Valley Forge, Pa. A summary of the experience gained through the use of this simulator is presented as well as examples of shock experiments that can be readily simulated at the GE Astro MIPS facility.

Dwyer, Thomas J.↗
NASA NTRS1988

Comment on 'Generation of broadband noise in the magnetotail by the beam acoustic instability' by P.B. Dusenbery

It is shown here that of the three plasma models for the generation of broadband noise in the magnetotail proposed by Dusenbery and Lyons (1985), two result in the same types of instabilities that are also excited in the Grabbe and Eastman (GE, 1984) model, while the third model introduces other modes not present in the GE model. For the plasma parameters given in the GE model, the ion/ion acoustic instability is a nonresonant one, even though the phase velocity of the excited waves falls within the distribution function of the core ions. The nonlinear saturation mechanism of the ion/ion acoustic instability is the trapping of both the core and the beam ions. In a reply, Dusenbery addresses several ongoing controversies which have resulted from studies of wave particle interactions in the plasma sheet boundary layer.

Omidi, N.↗
NASA NTRS1988

Hard X-ray and low-energy gamma-ray spectrometers

Basic principles of operation and characteristics of scintillation and semi-conductor detectors used for solar hard X-ray and gamma-ray spectrometers are presented. Scintillation materials such as NaI offer high stopping power for incident gamma rays, modest energy resolution, and relatively simple operation. They are, to date, the most often used detector in solar gamma-ray spectroscopy. The scintillator BGO has higher stopping power than NaI, but poorer energy resolution. The primary advantage of semi-conductor materials such as Ge is their high-energy resolution. Monte-Carlo simulations of the response of NaI and Ge detectors to model solar flare inputs show the benefit of high resoluton for studying spectral lines. No semi-conductor material besides Ge is currently available with adequate combined size and purity to make general-use hard X-ray and gamma-ray detectors for solar studies.

Gehrels, N.↗
NASA NTRS1989

ISO/LWS: Detector status

The aim of the long wavelength spectrometer (LWS) of the Infrared Space Observatory is to perform spectrometry in the wavelength range 45 to 200 microns using two resolution modes. The resolution will be around 200 in the medium resolution mode while it will reach 10(exp 4) in the high resolution mode. The sensitivity of this instrument will be close to 10(exp -18) W/sq. root Hz. A schematic view of the focal plane unit is presented. The detectors divide the wavelength range into ten spectral channels. The spectral range and position of each detector is indicated. Each detector will cover approximately a spectral bandwidth sufficient to allow for a 50 percent redundancy in the case of detector failure. There are three types of detectors. SW1 is a Ge:Be photoconductor covering the 45 to 55 micron region. LW1, SW2, SW3, SW4, SW5 are unstressed Ge:Ga photoconductors which cover the 50 to 120 micron region. LW2, LW3, LW4, LW5 are uniaxially stressed Ge:GA photoconductors covering the range from 100 to 200 microns. The stress applied to each detector will be adjusted in order to get the peak response in the corresponding wavelength range, and to minimize the dark current of the shorter wavelength stressed detectors. Stressed and unstressed detectors are located alternatively in order to receive the first and second order of the diffracted beam.

Lenaour, C.↗
NASA NTRS1991

Partitioning of siderophile elements in the Fe-Ni-S system - 1 bar to 80 kbar

Partition coefficients for Au, Ni, P, and Ge between solid Fe-Ni metal and sulfur-bearing metallic liquids have been measured at 7, 27 and 80 kbar. These are the only such data for Au, P, and Ge at high pressure. Comparison of the present partitioning results to those obtained at 1 bar indicate that only the 80-kbar Ge data differ significantly from the 1-bar experiments. Thus, many low-pressure partitioning experiments in the Fe-Ni-S-P system may have applicability to the greater portion of the earth's upper mantle or, alternatively, the entire mantle of Mars.

Jones, J. H.↗