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43 PARTICLE ACCELERATORS↗
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Results for “Gallium nitride”
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Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on a silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of 10 4 . Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion.
Thiel, Lillian↗
Boron nitride: Composition, optical properties and mechanical behavior
A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.
Pouch, John J.↗
Boron nitride - Composition, optical properties, and mechanical behavior
A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.
Pouch, John J.↗
Amorphous metallic films in silicon metallization systems
Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.
So, F.↗
Ellipsometric studies of sputtered silicon nitride on n-GaAs
Ellipsometry, which is the study of optical systems through their effect on polarized light, is a nondestructive technique offering extremely high sensitivity and in situ operation. One of the intriguing possibilities is to make use of the high sensitivity of ellipsometry for studying the very thin interface between an insulating film and a semiconductor substrate. Researchers have been especially interested in native or anodic oxides. In a recent study, Aspnes and Theeten used ellipsometry to study the interface between silicon and its thermally grown oxide, SiO2. These authors were able to conclude that the interface consisted of a 7 +/- 2 A graded region of atomically mixed silicon and oxygen. In this paper we report both analysis and experimental results for the system: sputtered silicon nitride on (100) n-type gallium arsenide.
Peng, Y. K.↗
A study of surface tension driven segregation in monotectic alloy systems
The compatibilities of various monotectic alloy systems with several different crucible materials were evaluated. The study was carried out using small candidate alloy samples of compositions that produced fifty volume percent of each liquid phase at the monotectic temperature. Compatibility was based on the evaluation of the wetting tendency of the two immiscible phases with the crucible material in a one-g solidified sample. Three types of wetting phenomena were observed during the evaluation. Type 1 indicates an alloy-crucible combination where the L2 phase preferentially wets the crucible material. Since L2 is usually the minority phase in desirable alloys, this material combination would be difficult to process and is therefore considered incompatible. Type 2 behavior indicates an alloy-crucible combination where the L1 phase preferentially wets the crucible material. This type of combination is considered compatible since surface tension effects should aid in processing the alloy to a useful form. Type 3 indicates any combination that leads to major reactions between the alloy and crucible material, gas entrapment, or separation of the metal from the crucible wall. Additional compatibility evaluations would have to be carried out on combinations of this category. The five alloy systems studied included aluminum-bismuth, copper-lead, aluminum-indium, aluminum-lead and cadmium-gallium. The systems were combined with crucibles of alumina, boron nitride, mullite, quartz, silicon carbide and zirconia.
Andrews, J. Barry↗
Creation of color centers in diamond by recoil implantation through dielectric films
The need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice. Further, recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as “recoil implantation.” Here, we extend this technique to incorporate dielectric precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond. Specifically, we demonstrate that gallium focused-ion-beam exposure to a thin layer of silicon nitride or silicon dioxide on the diamond surface results in the introduction of both extrinsic impurities and carbon vacancies. These defects subsequently give rise to near-surface NV and SiV centers with desirable properties after annealing.
42 ENGINEERING↗
Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates
An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.
Miyoshi, Kazuhisa↗
Mechanical strength and tribological behavior of ion-beam-deposited boron nitride films on non-metallic substrates
An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.
Miyoshi, Kazuhisa↗
Detached Solidification of InSb on Earth
Detached solidification of lightly gallium-doped indium antimonide was achieved in the laboratory only when the ampoule was coated with hexagonal boron nitride and when the material appeared to be oxide-free. A furnace was constructed with the temperature increasing with height in order to minimize bouyancy-driven convection, so as to maximize transport of segregated dissolved gases into the gap between the growing solid and the ampoule wall. There appeared to be no difference in results with freezing rates of 5 mmh and 10 mm/h. Best results were obtained when the ampoule was backfilled with 20 kPa of Ar-10%H2 prior to sealing. The detached portions were depressed by several pm from adjacent attached regions, were rough, and sometimes had microfacets and steps.
Wang, Jianbin↗
AIN-Coated Al(2)O(3) Substrates For Electronic Circuits
Type of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.
Kolawa, Elzbieta↗
High-efficiency solar thermophotovoltaic system using a nanostructure-based selective emitter
Herein, we present the design, fabrication, optimization, and experimental results of a high-efficiency planar solar thermophotovoltaic (STPV) system utilizing a micro-textured absorber and a nanostructure multilayer metal-dielectric coated selective emitter fabricated on a tungsten (W) substrate. Light absorptance of more than 90% was achieved at visible and near-infrared wavelengths using the microtextured absorbing surface. The nanostructure selective emitter consists of two thin-film optical coatings of silicon nitride (Si3N4) and a layer of W in between to increase the surface emissivity in spectral regimes matching the quantum efficiency of the thermophotovoltaic (TPV) cells. Gallium antimonide (GaSb)-based TPV cells are used in our STPV design. The experiment was conducted at different operating temperatures using a high-power continuous wave laser diode stack as a simulated source of concentrated incident radiation. Our experimental setup measured a maximum electrical output power density of 1.71 W/cm 2 at 1676 K STPV temperature, and the overall power conversion efficiency of 8.4% after normalizing the output power density to the emitter area. This is the highest STPV system efficiency reported so far for any experimental STPV device. The incident optical laser power on the absorber side was 131 W. This is equivalent to a solar concentration factor of ~2100, which is within the practical limit and readily achievable with Fresnel lens setup.
14 SOLAR ENERGY↗
Design of Ceramic Springs for Use in Semiconductor Crystal Growth in Microgravity
Segregation studies can be done in microgravity to reduce buoyancy driven convection and investigate diffusion-controlled growth during the growth of semiconductor crystals. During these experiments, it is necessary to prevent free surface formation in order to avoid surface tension driven convection (Marangoni convection). Semiconductor materials such as gallium arsenide and germanium shrink upon melting, so a spring is necessary to reduce the volume of the growth chamber and prevent the formation of a free surface when the sample melts. A spring used in this application must be able to withstand both the high temperature and the processing atmosphere. During the growth of gallium arsenide crystals during the GTE Labs/USAF/NASA GaAs GAS Program and during the CWRU GaAs programs aboard the First and Second United States microgravity Laboratories, springs made of pyrolytic boron nitride (PBN) leaves were used. The mechanical properties of these PBN springs have been investigated and springs having spring constants ranging from 0.25 N/mm to 25 N/mm were measured. With this improved understanding comes the ability to design springs for more general applications, and guidelines are given for optimizing the design of PBN springs for crystal growth applications.
Kaforey, M. F.↗
Beryllium Oxide (BeO) Handbook
Beryllium oxide (BeO) is an oxide ceramic material. BeO ceramics provide thermal conductivity second only to diamond among electrically insulating materials, dissipating nearly 300 W/mK at room temperature. This property leads to electronic applications for BeO. BeO has a thermal expansion coefficient intermediate between gallium arsenide and refractory metal composites. Its low dielectric constant (6.7) and low loss index (0.0012 at 1 MHz) permits electrical circuit performance at high frequencies. It is employed as a window material for high frequency microwave applications. BeO is very stable under oxidizing and reducing high temperature and high humidity environments, unlike nitrides which will decompose to their oxide equivalent. Similar to beryllium metal, BeO acts as a scatterer of neutrons and is used as a neutron moderator material in nuclear reactor applications. The largest use of BeO is as the raw material for the manufacture of beryllium-copper alloys, followed closely as the raw material for conversion to beryllium metal. Most of the research performed on BeO was conducted in the 1960’s and 1970’s. 75% of the references cited in this Handbook are from the time period 1960-1980. Up to 1995, there were three commercial sources of BeO: Materion Corporation, Eagle-Picher, and Ceradyne Corporation. However, since 1995 Eagle-Picher and Ceradyne no longer supply BeO commercial products. Thus, the only current commercial source of BeO materials is Materion Corporation.
36 MATERIALS SCIENCE↗
Neutral but Impactful: Gallium Cluster-Induced Nanopores from Beam-Blanked Gallium Ion Sources
Neutral atoms originating from liquid metal ion sources are an often-overlooked source of contamination and damage in focused ion beam microscopy. Beyond ions and single atoms, these sources also generate atom clusters. While most studies have investigated charged clusters, here we demonstrate that neutral clusters are also formed. These neutral clusters bypass the electrostatic beam blanking system, allowing them to impinge on samples even when the ion beam is blanked. We investigate this phenomenon using thin (≤20 nm) freestanding membranes of hexagonal boron nitride, silicon, and silicon nitride as targets. Randomly dispersed nanopores that form upon neutral cluster exposure are revealed. The average nanopore diameter is ∼2 nm with a narrow size distribution, suggesting that the atom clusters have a preferred size. Various electron microscopy techniques are used to characterize the nanopores, including high-resolution transmission electron microscopy, multislice ptychography, and electron energy-loss spectroscopy. Finally, we show how electron irradiation in the transmission electron microscope can be used to both remove any amorphous material that may clog the pores and to controllably grow the pores to specific sizes. Tunable nanopores such as these are interesting for nanofluidic applications requiring size-selective membranes.
Byrne, Dana O↗
Effects of Hydrogen on Tantalum Nitride Resistors
In this paper we report on observations of degradation of thin film Tantalum Nitride chip resistors in a hermetically sealed hybrid. The observations have been attributed to the reaction of residual Palladium with desorbed Hydrogen on the surface of the resistor film. Hydrogen gas has been observed to desorb from various sources within the sealed hybrid as a result of temperature elevation. The hydrogen gas has been reported to undergo a reaction with elements such as Platinum and Palladium causing device degradation in Gallium Arsenide Field Effect Transistors. The experimental procedures and data relating to this observation along with a discussion of available risk mitigation techniques will be presented.
Weiler, James↗
An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs
The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.
ADVANCED PROPULSION SYSTEMS,ENGINEERING↗