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At least 271 records · Page 15

Microstructural, thermal and antibacterial properties of electron beam irradiated Bombyx mori silk fibroin films

The Bombyx mori silk fibroin (SF) films were prepared by solution casting method and the effects of electron beam on structural, thermal and antibacterial responses of the prepared films were studied. The electron irradiation for different doses was carried out using 8 MeV Microtron facility at Mangalore University. The changes in microstructural parameters and thermal stability of the films were investigated using Wide Angle X-ray Scattering (WAXS) and thermogravimetric analysis (TGA) respectively. Both microstructuralline parameters (crystallite size and lattice strain (g in %)) and thermal stability of the irradiated films have increased with radiation dosage. Agar diffusion method demonstrated the antibacterial activity of SF film which was increased after irradiation on both Gram-positive and Gram-negative species.

36 MATERIALS SCIENCE↗

Nanocomposite‐Seeded Epitaxial Growth of Single‐Domain Lithium Niobate Thin Films for Surface Acoustic Wave Devices

Epitaxial lithium niobate (LNO) thin films are an attractive material for devices across a broad range of fields, including optics, acoustics, and electronics. These applications demand high‐quality thin films without in‐plane growth domains to reduce the optical/acoustical losses and optimize efficiency. Twin‐free single‐domain‐like growth has been achieved previously, but it requires specific growth conditions that might be hard to replicate. In this work, a versatile nanocomposite‐seeded approach is demonstrated as an effective approach to grow single‐domain epitaxial lithium niobate thin films. Films are grown through a pulsed laser deposition method and growth conditions are optimized to achieve high‐quality epitaxial film. A comprehensive microstructure characterization is performed and optical properties are measured. A piezoelectric acoustic resonator device is developed to demonstrate the future potential of the nanocomposite‐seeded approach for high‐quality LNO growth for radio frequency (RF) applications.

36 MATERIALS SCIENCE↗

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf 0.5 Zr 0.5 O 2 Tunnel Junctions

Tunnel devices based on ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed through use of a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Herein, the fundamental role of the microstructure of HZO films determining the balance between those contributions is demonstrated. The HZO film presents coherent or incoherent grain boundaries, associated to the coexistance of monoclinic and orthorhombic phases, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to ≈450%) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (≈10 3 –10 5 %) electroresistance when both phases coexist.

36 MATERIALS SCIENCE↗

Evolution of crystal structure during the initial stages of ZnO atomic layer deposition

In this study, a complementary suite of in situ synchrotron X-ray techniques is used to investigate both structural and chemical evolution during ZnO growth by atomic layer deposition. Focusing on the first 10 cycles of growth, we observe that the structure formed during the coalescence stage largely determines the overall microstructure of the film. Furthermore, by comparing ZnO growth on silicon with a native oxide with that on Al 2 O 3 (001), we find that even with lattice-mismatched substrates and low deposition temperatures, the crystalline texture of the films depend strongly on the nature of the interfacial bonds.

36 MATERIALS SCIENCE↗

Buta-1,3-diyne-Based π-Conjugated Polymers for Organic Transistors and Solar Cells

We report the synthesis and characterization of new alkyl-substituted 1,4-di(thiophen-2-yl)buta-1,3-diyne (R-DTB) donor building blocks, based on the -C≡C-C≡C- conjugative pathway, and their incorporation with thienyl-diketopyrrolopyrrole (R'-TDPP) acceptor units into π-conjugated PTDPP-DTB polymers (P1-P4). The solubility of the new polymers strongly depends on the DTB and DPP solubilizing (R and R', respectively) substituents. Thus, solution processable and high molecular weight PDPP-DTB polymers are achieved for P3 (R = n-C12H25, R' = 2- butyloctyl) and P4 (R = 2-ethylhexyl, R' = 2-butyloctyl). Systematic studies of P3 and P4 physicochemical properties are carried using optical spectroscopy, cyclic voltammetry, and thermal analysis, revealing characteristic features of the dialkynyl motif. For the first time, optoelectronic devices (OFETs, OPVs) are fabricated with 1,3-butadiyne containing organic semiconductors. OFET hole mobilities and record OPV power conversion efficiencies for acetylenic organic materials approach 0.1 cm2/(V s) and 4%, respectively, which can be understood from detailed thin-film morphology and microstructural characterization using AFM, TEM, XRD, and GIWAXS methodologies. Importantly, DTB-based polymers (P3 and P4) exhibit, in addition to stabilization of frontier molecular orbitals and to -C≡C-C≡C- relief of steric torsions, discrete morphological pliability through thermal annealing and processing additives. The advantageous materials properties and preliminary device performance reported here demonstrate the promise of 1,3-butadiyne-based semiconducting polymers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

ZIF-8 Vibrational Spectra: Peak Assignments and Defect Signals

In this study, Zeolitic Imidazolate Framework-8 (ZIF-8) is a promising material for gas separation applications. It also serves as a prototype for numerous ZIFs, including amorphous ones, with a broader range of possible applications, including sensors, catalysis, and lithography. It consists of zinc coordinated with 2-methylimidazolate (2mIm) and has been synthesized with methods ranging from liquid-phase to solvent-free synthesis, which aim to control its crystal size and shape, film thickness and microstructure, and incorporation into nanocomposites. Depending on the synthesis method and post-synthesis treatments, ZIF-8 materials may deviate from the nominal defect-free ZIF-8 crystal structure due to defects like missing 2mIm, missing zinc, and physically adsorbed 2mIm trapped in the ZIF-8 pores, which may alter its performance and stability. Infra-red (IR) spectroscopy has been used to assess the presence of defects in ZIF-8 and related materials. However, conflicting interpretations by various authors persist in the literature. Here, we systematically investigate ZIF-8 vibrational spectra by combining experimental IR spectroscopy and first-principles molecular dynamics simulations, focusing on assigning peaks and elucidating the spectroscopic signals of putative defects present in ZIF-8 material. We attempt to resolve conflicting assignments from the literature and to provide a comprehensive understanding of the vibrational spectra of ZIF-8 and its defect-induced variations, aiming towards more precise quality control and design of ZIF-8-based materials for emerging applications.

36 MATERIALS SCIENCE↗

Direct growth of single-crystalline III–V semiconductors on amorphous substrates

The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V’s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V’s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. In conclusion, the work presents an important advance towards universal integration of III–V’s on application-specific substrates by direct growth.

36 MATERIALS SCIENCE↗

Influence of the molecular weight and size distribution of PSS on mixed ionic-electronic transport in PEDOT:PSS

The commercially available polyelectrolyte complex poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is ubiquitous in organic and hybrid electronics. As such, it has often been used as a benchmark material for fundamental studies and the development of new electronic devices. Yet, most studies on PEDOT:PSS have focused on its electronic conductivity in dry environments, with less consideration given to its ion transport, coupled ionic-electronic transport, and charge storage properties in aqueous environments. These properties are essential for applications in bioelectronics (sensors, actuators), charge storage devices, and electrochromic displays. Importantly, past studies on mixed ionic-electronic transport in PEDOT:PSS neglected to consider how the molecular structure of PSS affects mixed ionic-electronic transport. Herein, we therefore investigated the effect of the molecular weight and size distribution of PSS on the electronic properties and morphology of PEDOT:PSS both in dry and aqueous environments, and overall performance in organic electrochemical transistors (OECTs). Using reversible addition–fragmentation chain transfer (RAFT) polymerization with two different chain transfer agents, six PSS samples with monomodal, narrow (D = 1.1) and broad (D = 1.7) size distributions and varying molecular weights were synthesized and used as matrices for PEDOT. We found that using higher molecular weight of PSS (Mn = 145 kg mol –1 ) and broad dispersity led to OECTs with the highest transconductance (up to 16 mS) and [μC*] values (~140 F cm –1 V –1 s –1 ) in PEDOT:PSS, despite having a lower volumetric capacitance (C* = 35 ± 4 F cm –3 ). The differences were best explained by studying the microstructure of the films by atomic force microscopy (AFM). We found that heterogeneities in the PEDOT:PSS films (interconnected and large PEDOT- and PSS-rich domains) obtained from high molecular weight and high dispersity PSS led to higher charge mobility (μOECT ~4 cm 2 V –1 s –1 ) and hence transconductance. Furthermore, these studies highlight the importance of considering molecular weight and size distribution in organic mixed ionic-electronic conductor, and could pave the way to designing high performance organic electronics for biological interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Understanding misfit strain releasing mechanisms via molecular dynamics simulations of CdTe growth on {112}zinc-blende CdS

Molecular dynamics simulations have been used to analyse microstructures of CdTe films grown on {112} surfaces of zinc-blende CdS. Interestingly, CdTe films grow in <331> orientations as opposed to <112> epitaxial orientations. At the CdTe-{331}/CdS-{112} interface, however, there exists an axis that is parallel to the <110> orientation of both CdS and CdTe. It is the direction orthogonal to this <110> that becomes different, being <116> for CdTe and <111> for CdS, respectively. Missing CdTe-{110} planes are found along the <110> axis, suggesting that the misfit strain is released by the conventional misfit dislocation mechanism along this axis. In the orthogonal axis, the misfit strain is found to be more effectively released by the new grain orientation mechanism. Our finding is supported by literature experimental observations of the change of growth direction when Cd 0.96 Zn 0.04 Te films are deposited on GaAs. Lastly the analyses of energetics clearly demonstrate the cause for the formation of the new orientation, and the insights gained from our studies can help understand the grain structures experimentally observed in lattice mismatched systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-Throughput Combinatorial Development of High-Entropy Alloys For Light-Weight Structural Applications

The primary limitation of today’s lightweight structural alloys is that specific yield strengths (SYS) higher than 200MPa x cc/g (typical value for titanium alloys) are extremely difficult to achieve. This holds true especially at a cost lower than 5dollars/kg (typical value for magnesium alloys). Recently, high-entropy alloys (HEA) have shown promising SYS, yet the large composition space of HEA makes screening compositions complex and time-consuming. Over the course of this 2-year project we started from 150 billion compositions and reduced the number of potential low-density (<5g/cc), low-cost (<5dollars/kg) high-entropy alloy (LDHEA) candidates that are single-phase, disordered, solid-solution (SPSS) to a few thousand compositions. This was accomplished by means of machine learning to guide design for SPSS LDHEA based on a combination of recursive partitioning, an extensive, experimental HEA database compiled from 24 literature sources, and 91 calculated parameters serving as phenomenological selection rules. Machine learning shows an accuracy of 82% in identifying which compositions of a separate, smaller, experimental HEA database are SPSS HEA. Calculation of Phase Diagrams (CALPHAD) shows an accuracy of 71-77% for the alloys supported by the CALPHAD database, where 30% of the compiled HEA database is not supported by CALPHAD. In addition to machine learning, and CALPHAD, a third tool was developed to aid design of SPSS LDHEA. Phase diagrams were calculated by constructing the Gibbs-free energy convex hull based on easily accessible enthalpy and entropy terms. Surprisingly, accuracy was 78%. Pursuing these LDHEA candidates by high-throughput experimental methods resulted in SPSS LDHEA composed of transition metals (e.g. Cr, Mn, Fe, Ni, Cu) alloyed with Al, yet the high concentration of Al, necessary to bring the mass density below 5.0g/cc, makes these materials hard and brittle, body-centered-cubic (BCC) alloys. A related, yet multi-phase BCC alloy, based on Al-Cr-Fe-Ni, shows compressive strain >10% and specific compressive yield strength of 229 MPa x cc/g, yet does not show ductility in tensile tests due to cleavage. When replacing Cr in Al-Cr-Fe-based 4- and 5-element LDHEA with Mn, hardness drops 2x. Combined with compression test results, including those on the ternaries Al-Cr-Fe and Al-Mn-Fe suggest that Al-Mn-Fe-based LDHEA are still worth pursuing. These initial results only represent one compressive stress-strain curve per composition without any property optimization. As such, reproducibility needs to be followed by optimization to show their full potential. When including Li, Mg, and Zn, single-phase Li-Mg-Al-Ti-Zn LDHEA has been found with a specific ultimate compressive strength of 289MPa x cc/g. Al-Ti-Mn-Zn showed a specific ultimate compressive strength of 73MPa x cc/g. These initial results after hot isostatic pressing (HIP) of the ball-milled powders represent the lower end of what is possible, since no secondary processing (e.g. extrusion) has been performed to optimize strength and ductility. Compositions for multi-phase (e.g. dual-phase) LDHEA were identified largely by automated searches through CALPHAD databases, while screening for large face-centered-cubic (FCC) volume fractions, followed by experimental verification. This resulted in several new alloys. Li-Mg-Al-Mn-Fe and Mg-Mn-Fe-Co ball-milled powders upon HIP show specific ultimate compressive strengths of 198MPa x cc/g and 45MPa x cc/g, respectively. Several malleable quarternary Al-Zn-based alloys have been found upon arc/induction melting, yet with limited specific compressive yield strength (<75 MPa x cc/g). These initial results are all without any optimization for strength and/or ductility. High-throughput experimentation allowed us to triple the existing experimental HEA database as published in the past 10 years in less than 2 years which happened at a rate 10x higher than previous methods. Furthermore, we showed that high-throughput thin-film combinatorial methods can be used to get insight in isothermal phase diagram slices. Although it is straightforward to map hardness as a function of composition for sputtered, thin-film, compositional gradients by nano-indentation and compare the results to micro-indentation on bulk samples, the simultaneous impact of composition, roughness, film density, and microstructure on hardness requires monitoring all these properties as a function of location on the compositional gradient, including dissecting the impact of these 4 factors on the hardness map. These additional efforts impact throughput significantly. This work shows that a lot of progress has been made over the years in predicting phase formation that aids the discovery of new alloys, yet that a lot of work needs to be done to predict phases more accurately for LDHEA, whether done by CALPHAD or by other means. More importantly, more work needs to be done to predict mechanical properties of novel alloys, like yield strength, and ductility. Furthermore, this work shows that there is a need for the generation of an empirical alloy database covering strategic points in a multi-dimensional composition space to allow for faster and more accurate predictive interpolations to identify the oasis in the dessert more quickly. Finally, this work suggests that it is worth pursuing a ductile alloy with a SYS > 300 MPa x cc/g in a mass density range of 6-7 g/cc, since the chances for a single-phase or majority-phase FCC increase significantly. Today’s lightweight steels are in this density range.

36 MATERIALS SCIENCE↗

Microscopic aspects of interfacial reactions in diffusion bonding processes

Microscopic aspects of interfacial reactions are discussed, such as interdiffusion, formation of intermetallic phases, generation and annihilation of lattice defects, effect of temperature, grain size, etc., which normally occur in diffusion bonding processes. Relationships between properties and microstructure in thin film couples are examined utilizing a unique combination of contact resistance measurements and characterization by transmission electron microscopy.

Shearer, M. P.↗

Nanostructured Vanadium Oxide Uncooled Bolometers and Method of Fabrication

The present invention relates to uncooled microbolometers which can be integrated in future thermal instruments engaged in land imaging on future observatories. The present invention includes: (1) developing and characterizing a microstructured VOx thin film, and, (2) fabricating an uncooled microbolometer array over the 8-14 micron spectral band.

Brown, Ari D.↗

Influence of vanadium incorporation on the microstructure, mechanical and tribological properties of Nb–V–Si–N films deposited by reactive magnetron sputtering

Composite Nb–V–Si–N films with various V contents (3.7–13.2 at.%) were deposited by reactive magnetron sputtering and the effects of V content on the microstructure, mechanical and tribological properties of Nb–V–Si–N films were investigated. The results revealed that a three-phase structure, consisting of face-centered cubic (fcc) Nb–V–Si–N, hexagonal close-packed (hcp) Nb–V–Si–N and amorphous Si{sub 3}N{sub 4}, co-exists in the Nb–V–Si–N films and the cubic phase is dominant. The hardness and critical load (L{sub c}) of Nb–V–Si–N films initially increased gradually and reached a summit, then decreased with the increasing V content in the films and the maximum values were 35 GPa and 9.8 N, respectively, at 6.4 at.% V. The combination of V into Nb–Si–N film led to the fracture toughness linearly increasing from 1.11 MPa·m{sup 1/2} at 3.7 at.% V to 1.67 MPa·m{sup 1/2} at 13.2 at.% V. At room temperature (RT), the average friction coefficient decreased from 0.80 at 3.7 at.% V to 0.55 at 13.2 at.% V for the Nb–V–Si–N films. The wear rate of Nb–V–Si–N films initially decreased and then increased after reaching a minimum value of about 6.35 × 10{sup −} {sup 7} mm{sup 3}/N·mm at 6.4 at.% V. As the rise of testing temperature from 200 °C to 600 °C, the average friction coefficient of Nb–V–Si–N films decreased with the increase of the testing temperature regardless of V content. However, the wear rate gradually increased for all films. The average friction coefficient and wear rate at RT and elevated temperatures were mainly influenced by the vanadium oxides with weakly bonded lattice planes. - Highlight: • Fcc-Nb–V–Si–N, hcp-Nb–V–Si–N and amorphous Si{sub 3}N{sub 4} co-existed in the films. • The amount of Si{sub 3}N{sub 4} decreased with increasing V content in the films. • Hardness of Nb–V–Si–N film (6.4 at.%) reached a maximum value of 35 GPa. • Addition of V led to the increase of fracture toughness. • Tribological properties were influenced by lubricant wear debris.

36 MATERIALS SCIENCE↗

Surface Film Formation on Al-V Alloys with Far-From-Equilibrium Microstructure

Nanocrystalline supersaturated Al-V alloys produced by high-energy ball milling have been reported to exhibit enhanced corrosion resistance and mechanical properties compared to commercial Al alloys. Corrosion of passive alloys such as Al-V alloy relies on the characteristics of the surface film, which is studied using scanning/transmission electron microscopy and time-of-flight secondary ion mass spectrometry. The effect of microstructure and composition on the surface film has been investigated after different immersion periods (30 min, 2 h, and 1 day) in 0.1 M NaCl. The surface film was complex and composed of oxidized Al and V. The heterogeneous surface film was observed due to the presence of secondary phases and initiation of localized corrosion. The void formation was observed beneath the surface film that would potentially cause pitting corrosion. The generation of nano-sized voids was dependent on grain orientation. Compared to pure Al, the chloride penetration is suppressed in Al-V alloys. The effect of composition and microstructure on surface film formation and attendant corrosion behavior is discussed herein.

36 MATERIALS SCIENCE↗

Optical and microstructural studies of erbium-doped TiO 2 thin films on silicon, SrTiO 3 , and sapphire

Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped TiO 2 is an attractive candidate: the Er 3+ optical transition is compatible with C-band optical fiber communications, while TiO 2 is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped TiO 2 thin films grown via molecular beam deposition on silicon, SrTiO 3 , and sapphire substrates, we have explored the impact of polycrystallinity and microstructure on the optical properties of the Er emission. Comparing polycrystalline TiO 2 (rutile)/Si with single-crystalline TiO 2 (rutile)/r-sapphire and polycrystalline TiO 2 (anatase)/Si with single-crystalline TiO 2 (anatase)/SrTiO 3 , we observe that the inhomogeneous linewidth (Γ inh ) of the most prominent peak in the Er spectrum (the Y 1 –Z 1 transition, 1520 and 1533 nm in rutile and anatase TiO 2 ) is significantly narrower in the polycrystalline case. This implies a relative insensitivity to extended structural defects and grain boundaries in such films (as opposed to, e.g., point defects). We show that the growth of an undoped, underlying TiO 2 buffer on Si can reduce Γ inh by a factor of 4–5. Expectedly, Γ inh also reduces with decreasing Er concentrations: we observe a ∼2 order of magnitude reduction from ∼1000 ppm Er to ∼10 ppm Er. Γ inh then gets limited to a residual value of ∼5 GHz that is insensitive to further reduction in the Er concentration. Based upon the above results, we argue that the optical properties in these thin films are limited by the presence of high “grown-in” point defect concentrations.

Chemical elements↗

Electrochemical and microstructural characterization of magnetron-sputtered ATO thin films as Li–ion storage materials

Highlights: • Nano-structured ATO thin films prepared by RF magnetron sputtering at 25 °C, 100 °C and 200 °C, respectively. • ATO thin films show a high reversible capacity and high rate performance. • Electrochemical reaction mechanism of the ATO thin film was revealed by transmission electron microscopy. - Abstract: Sb-doped SnO{sub 2} (ATO) nanostructured thin films were prepared by using radio frequency magnetron sputtering at the substrate temperatures of 25 °C, 100 °C and 200 °C, respectively. All the ATO thin films have the similar redox characteristics in the cyclic voltammetry measurements. The ATO thin film sputtered at 200 °C shows the lowest charge transfer resistance and best electrochemical performance, and has a high reversible capacity of 679 mA h g{sup −1} at 100 mA g{sup −1} after 200 charge–discharge cycles and high rate performance of 483 mA h g{sup −1} at 800 mA g{sup −1}. The electrochemical mechanisms were investigated by analyzing the phase evolution of the ATO electrodes that had been electrochemically induced at various stages. The results reveal that the ATO underwent reversible lithiation/delithiation processes during the electrochemical cycles, i.e., the SnO{sub 2} reacted with Li{sup +} to produce metallic Sn and followed by the formation of the Li{sub x}Sn alloys during discharge process, and then Li{sub x}Sn alloys de-alloyed, Sn reacted with Li{sub 2}O, and even partially formed SnO{sub 2} during charge process.

36 MATERIALS SCIENCE↗

Detection of short range order in SiO{sub 2} thin-films by grazing-incidence wide and small-angle X-ray scattering

The effects of the fabrication process conditions on the microstructure of silicon dioxide thin films of <10 nm thickness are presented. The microstructure was investigated using grazing-incidence wide and small-angle X-ray scattering methods with synchrotron radiation. The combination of a high brilliance light source and grazing incident configuration enabled the observation of very weak diffuse X-ray scattering from SiO{sub 2} thin films. The results revealed different microstructures, which were dependent on oxidizing species or temperature. The micro-level properties differed from bulk properties reported in the previous literature. It was indicated that these differences originate from inner stress. The detailed structure in an amorphous thin film was not revealed owing to detection difficulties.

36 MATERIALS SCIENCE↗

On the pressure effect in energetic deposition of Cu thin films by modulated pulsed power magnetron sputtering: A global plasma model and experiments

The modulated pulsed power magnetron sputtering (MPPMS) discharge processes are numerically modeled and experimentally investigated, in order to explore the effect of the pressure on MPPMS discharges as well as on the microstructure of the deposited thin films. A global plasma model has been developed based on a volume-averaged global description of the ionization region, considering the loss of electrons by cross-B diffusion. The temporal variations of internal plasma parameters at different pressures from 0.1 to 0.7 Pa are obtained by fitting the model to duplicate the experimental discharge data, and Cu thin films are deposited by MPPMS at the corresponding pressures. The surface morphology, grain size and orientation, and microstructure of the deposited thin films are investigated by scanning electron microscopy, transmission electron microscopy, and x-ray diffraction. By increasing the pressure from 0.1 to 0.7 Pa, both the ion bombardment energy and substrate temperature which are estimated by the modeled plasma parameters decrease, corresponding to the observed transition of the deposited thin films from a void free structure with a wide distribution of grain size (zone T) into an underdense structure with a fine fiber texture (zone 1) in the extended structure zone diagram (SZD). The microstructure and texture transition of Cu thin films are well-explained by the extended SZD, suggesting that the primary plasma processes are properly incorporated in the model. The results contribute to the understanding of the characteristics of MPPMS discharges, as well as its correlation with the microstructure and texture of deposited Cu thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗