Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “FERROMAGNETIC RESONANCE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Magnetic and Gilbert damping properties of L{sub 21}-Co{sub 2}FeAl film grown by molecular beam epitaxy

Co{sub 2}FeAl film with L{sub 21} structure was prepared. Its magnetic and Gilbert damping properties were studied by ferromagnetic resonance (FMR) and time-resolved magneto-optical Kerr effect (TR-MOKE), respectively. It is observed that the apparent damping parameter decreases drastically with increasing magnetic field at low field regime and eventually becomes a constant value of 0.004 at high field regime by TR-MOKE measurements. A Gilbert damping parameter of 0.008 in the hard axis by FMR measurement has also been obtained, which is comparable with that extracted from TR-MOKE measurements at low external field, indicating the extrinsic damping processes involved in the low field regime.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Unconventional spin-orbit torques from sputtered MoTe 2 films

Materials with strong spin-orbit coupling and low crystalline symmetry are promising for generating large unconventional spin-orbit torques (SOTs), such as in-plane fieldlike (FL) torques and out-of-plane dampinglike (DL) torques, which can effectively manipulate and deterministically switch an out-of-plane magnetization without the need for additional external in-plane magnetic fields. Here, we report SOTs generated by magnetron-sputtered 1⁢T' MoTe 2 /Permalloy (Py; Ni 80 ⁢Fe 20 )/MgO heterostructures using both spin-torque ferromagnetic resonance (ST-FMR) and second harmonic Hall measurements. We observed unconventional FL and DL torques in our samples due to spins polarized normal to the interface of MoTe 2 and Py layers, and studied the influence of crystallographic order and MoTe 2 layer thickness on the SOTs. By comparing the Raman spectra of 1⁢T' MoTe 2 samples prepared in different ways, we found a tensile strain in sputtered MoTe 2 films, which might further enhance the generation of unconventional torques by reducing the symmetry of 1⁢T' MoTe 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Resolving the controversy of a possible relationship between perpendicular magnetic anisotropy and the magnetic damping parameter

We use broadband ferromagnetic resonance spectroscopy to systematically measure the Landau-Lifshitz damping parameter, perpendicular anisotropy, and the orbital moment asymmetry in Co{sub 90}Fe{sub 10}/Ni multilayers. No relationship is found between perpendicular magnetic anisotropy and the damping parameter in this material. However, inadequate accounting for inhomogeneous linewidth broadening, spin-pumping, and two-magnon scattering could give rise to an apparent relationship between anisotropy and damping. In contrast, the orbital-moment asymmetry and the perpendicular anisotropy are linearly proportional to each other. These results demonstrate a fundamental mechanism by which perpendicular anisotropy can be varied independently of the damping parameter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Laser-induced THz magnetization precession for a tetragonal Heusler-like nearly compensated ferrimagnet

Laser-induced magnetization precessional dynamics was investigated in epitaxial films of Mn{sub 3}Ge, which is a tetragonal Heusler-like nearly compensated ferrimagnet. The ferromagnetic resonance (FMR) mode was observed, the precession frequency for which exceeded 0.5 THz and originated from the large magnetic anisotropy field of approximately 200 kOe for this ferrimagnet. The effective damping constant was approximately 0.03. The corresponding effective Landau-Lifshitz constant is approximately 60 Mrad/s and is comparable with those of the similar Mn-Ga materials. The physical mechanisms for the Gilbert damping and for the laser-induced excitation of the FMR mode were also discussed in terms of the spin-orbit-induced damping and the laser-induced ultrafast modulation of the magnetic anisotropy, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Evolution of the interfacial magnetic anisotropy in MgO/CoFeB/Ta/Ru based multilayers as a function of annealing temperature

We report the effect of annealing temperature on the dynamic and static magnetic properties of MgO/CoFeB/Ta/Ru multilayers. Angular resolved ferromagnetic resonance measurement results show that the as-deposited film exhibits in-plane magnetic anisotropy, whereas in the annealed films the magnetic easy-axis is almost along the direction perpendicular to the plane of the layers. The extracted interfacial anisotropy energy, K{sub i}, is maximized at an annealing temperature 225{sup ∘}C, in agreement with the vibrating sample magnetometry results. Although the magnetization is not fully out-of-plane, controlling the degree of the magnetization obliqueness may be advantageous for specific applications such as spin-transfer oscillators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures

We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead to spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electric-field tunable spin diode FMR in patterned PMN-PT/NiFe structures

Dynamic properties of NiFe thin films on PMN-PT piezoelectric substrate are investigated using the spin-diode method. Ferromagnetic resonance (FMR) spectra of microstrips with varying width are measured as a function of magnetic field and frequency. The FMR frequency is shown to depend on the electric field applied across the substrate, which induces strain in the NiFe layer. Electric field tunability of up to 100 MHz per 1 kV/cm is achieved. An analytical model based on total energy minimization and the Landau-Lifshitz-Gilbert equation, taking into account the magnetostriction effect, is used to explain the measured dynamics. Based on this model, conditions for optimal electric-field tunable spin diode FMR in patterned NiFe/PMN-PT structures are derived.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Low-relaxation spin waves in laser-molecular-beam epitaxy grown nanosized yttrium iron garnet films

Synthesis of nanosized yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) films followed by the study of ferromagnetic resonance (FMR) and spin wave propagation in these films is reported. The YIG films were grown on gadolinium gallium garnet substrates by laser molecular beam epitaxy. It has been shown that spin waves propagating in YIG deposited at 700 °C have low damping. At the frequency of 3.29 GHz, the spin-wave damping parameter is less than 3.6 × 10{sup −5}. Magnetic inhomogeneities of the YIG films give the main contribution to the FMR linewidth. The contribution of the relaxation processes to the FMR linewidth is as low as 1.2%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

First observation of magnetoelectric effect in M-type hexaferrite thin films

The magnetoelectric (ME) effect in M-type hexaferrite thin films is reported. Prior to this work, the ME effect in hexaferrite materials was observed only in bulk polycrystalline materials. Thin films of SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} were grown on sapphire (0001) using pulsed laser deposition. The thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance. We measured saturation magnetization of 1250 G, g-factor of 2.66, and coercive field of 20 Oe for these magnetoelectric M-type hexaferrite thin films. The magnetoelectric effect was confirmed by monitoring the change rate in remanence magnetization with the application of DC voltage at room temperature and it gave rise to changes in remanence in the order of 12.8% with the application of only 1 V (DC voltage). We deduced a magnetoelectric coupling, {alpha}, of 6.07 Multiplication-Sign 10{sup -9} s m{sup -1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Simultaneous measurement of the exchange parameter and saturation magnetization using propagating spin waves

The exchange interaction in ferromagnetic ultra thin films is a critical parameter in magnetization-based storage and logic devices, yet the accurate measurement of it remains a challenge. While a variety of approaches are currently used to determine the exchange parameter, each has its limitations, and good agreement among them has not been achieved. To date, neutron scattering, magnetometry, Brillouin light scattering, spin-torque ferromagnetic resonance spectroscopy, and Kerr microscopy have all been used to determine the exchange parameter. Here, we present a method that exploits the wavevector selectivity of Brillouin light scattering to measure the spin wave dispersion in both the backward volume and Damon–Eshbach orientations. The exchange, saturation magnetization, and magnetic thickness are then determined by a simultaneous fit of both dispersion branches with general spin wave theory without any prior knowledge of the thickness of a magnetic “dead layer.” In this study, we demonstrate the strength of this technique for ultrathin metallic films, typical of those commonly used in industrial applications for magnetic random-access memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effect of Ru thickness on spin pumping in Ru/Py bilayer

We report the effect of Ru thickness (t{sub Ru}) on ferromagnetic resonance (FMR) line-width of Ru(t{sub Ru})/Py(23 nm) bilayer samples grown on Si(100)/SiO{sub 2} substrates at room temperature by magnetron sputtering. The FMR line-width is found to vary linearly with frequency for all thicknesses of Ru, indicating intrinsic origin of damping. For Ru thicknesses below 15 nm, Gilbert-damping parameter, α is almost constant. We ascribe this behavior to spin back flow that is operative for Ru thicknesses lower than the spin diffusion length in Ru, λ{sub sd}. For thicknesses >15 nm (>λ{sub sd}), the damping constant increases with Ru thickness, indicating spin pumping from Py into Ru.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Growth and spin-wave properties of thin Y{sub 3}Fe{sub 5}O{sub 12} films on Si substrates

We describe synthesis of submicron Y{sub 3}Fe{sub 5}O{sub 12} (YIG) films sputtered on Si substrates and present results of the investigation of ferromagnetic resonance (FMR) and spin waves in YIG/SiO{sub 2}/Si structures. It is found that decrease of the annealing time leads to essential reduction of the FMR linewidth ΔH and, consequently, to reduction of relaxation losses of spin waves. Spin-wave propagation in in-plane magnetized YIG/SiO{sub 2}/Si structures is studied. We observe the asymmetry of amplitude-frequency characteristics of the Damon-Eshbach spin waves caused by different localizations of spin waves at the free YIG surface and at the YIG/SiO{sub 2} interface. Growth of the generating microwave power leads to spin-wave instability and changes amplitude-frequency characteristics of spin waves.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Unconventional fieldlike spin torques in CrPt 3

The topological semimetal CrPt 3 has potential for generating unconventional spin torques due to its ferrimagnetic ordering, topological band structure, and high anomalous Hall effect. CrPt 3 exhibits ferrimagnetic behavior only in its chemically ordered phase and is paramagnetic in its chemically disordered phase. By controlling the growth and annealing temperatures, we prepare epitaxial films of both chemically ordered and chemically disordered phases of CrPt 3 , allowing us to investigate the effect of magnetic ordering on unconventional-torque generation. We use angle-dependent spin-torque-ferromagnetic-resonance and second-harmonic Hall measurements to probe the spin torques generated from epitaxial CrPt 3 in CrPt 3 /Cu/Ni 81 ⁢Fe 19 heterostructures. With current applied along specific directions with respect to the crystal order, we reveal unconventional spin torques in both ordered and disordered films. When current flows parallel to the [$1\bar{1}1$] and [ $\bar{1}11$] directions, we observe an unconventional fieldlike torque that is opposite in sign for the two directions. Finally, our calculations reveal that this unconventional torque originates from an indirect nonlocal spin-orbit torque due to spin scattering at the CrPt 3 /Cu interface, in addition to symmetry breaking at this interface.

ferromagnetic resonance↗
DOE OSTI2020

Planar Hall Driven Torque in a Ferromagnet/Nonmagnet/Ferromagnet System

An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A CoNi multilayer is used as a spin current source in a sample with structure CoNi/Au/CoFeB. Spin torque ferromagnetic resonance is used to measure the torque on the CoFeB layer. The response as a function of the applied field angle and current is consistent with the symmetry expected for a torque produced by the planar Hall effect originating in CoNi. We find the strength of this effect to be comparable to that of the spin Hall effect in platinum, indicating that the planar Hall effect holds potential as a spin current source with a controllable polarization direction.

ferromagnetic resonance↗
DOE OSTI2019

Magnetic Properties and Electronic Structure of Ni/C Multilayer Films

The magnetic properties of Ni/C multilayers were investigated using vibrating sample magnetometer and ferromagnetic resonance (FMR). Spin wave resonances were seen in FMR and the spin wave was found to be sustained through whole layers. The interlayer coupling constant was small pointing out a weak exchange coupling between Ni films through C spacers. The FMR linewidth, in parallel geometry, of the uniform mode decreases with the increase in Ni thickness from 30 to 300 Å which can be understood by considering interfacial effects. The magnetization decreases with decreasing Ni thickness due to the structural imperfections associated with the presence of Ni{sub 1−x}C{sub x} alloys at the interface. Density functional theory (DFT) has been performed to shed light on the decrease in magnetic moment at the interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Mechanism of tailored magnetic anisotropy in amorphous Co{sub 68}Fe{sub 24}Zr{sub 8} thin films

The mechanism of tailored magnetic anisotropy in amorphous Co{sub 68}Fe{sub 24}Zr{sub 8} thin films was investigated by ferromagnetic resonance (FMR) on samples deposited without an applied magnetic field, with an out-of-plane field and an in-plane field. Analysis of FMR spectra profiles, high frequency susceptibility calculations, and statistical simulations using a distribution of local uniaxial magnetic anisotropy reveal the presence of atomic configurations with local uniaxial anisotropy, of which the direction can be tailored while the magnitude remains at an intrinsically constant value of 3.0(2) kJ/m{sup 3}. The in-plane growth field remarkably sharpens the anisotropy distribution and increases the sample homogeneity. The results benefit designing multilayer spintronic devices based on highly homogeneous amorphous layers with tailored magnetic anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Field-dependent perpendicular magnetic anisotropy in CoFeB thin films

We report ferromagnetic resonance measurements of perpendicular magnetic anisotropy in thin films of Ta/Co{sub 20}Fe{sub 60}B{sub 20}/MgO as a function of the Co{sub 20}Fe{sub 60}B{sub 20} layer thickness. The first and second order anisotropy terms show unexpectedly strong dependence on the external magnetic field applied to the system during the measurements. We propose strong interfacial spin pinning as a possible origin of the field-dependent anisotropy. Our results imply that high-field anisotropy measurements cannot be directly used for quantitative evaluation of zero-field performance parameters of CoFeB-based devices such as spin torque memory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy

Electric field (E–field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy–efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin–reorientation transition (SRT) that allows the magnetic moment rotating between the out–of–plane and the in–plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+[TFSI] – /Pt/(Co/Pt) 2 /Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V –1 . As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out–of–plane and in–plane directions via IL gating. The key mechanism, revealed by the first–principles calculation, is that the IL gating process influences the interfacial spin–orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in–plane/out–of–plane magnetization switching. In conclusion, this work demonstrates a unique IL–gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories.

36 MATERIALS SCIENCE↗