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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323 K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4 eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Optical and magneto-optical properties of Co-doped CeO{sub 2−δ} films in the 0.5 to 4 eV range

Magnetically doped Ce{sub 1−x}Co{sub x}O{sub 2−δ} (nominal x = 0.05 and 0.10) films were systematically studied by spectroscopic ellipsometry and magneto-optical spectroscopy. The samples were prepared by pulsed laser deposition on MgO(100) substrates and grew as textured polycrystalline films with thickness between 200 and 750 nm. They exhibited room temperature ferromagnetism and an out-of-plane easy axis attributed to magnetoelastic effects from the in-plane compressive strain. The dispersion of dielectric function of Ce{sub 1−x}Co{sub x}O{sub 2−δ} films was parametrized by the sum of Tauc-Lorentz and damped Lorentz oscillators and adjusted numerically. Deduced optical band gaps were similar to those of pure CeO{sub 2}, but the Co doping increased the optical absorption. The magneto-optical spectroscopy was carried out in both Faraday and Kerr configurations in the photon energy range from 0.5 to 4 eV, showing a strong dependence of the magneto-optical effect on the Co content near the optical band edge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ge interface engineering using ultra-thin La{sub 2}O{sub 3} and Y{sub 2}O{sub 3} films: A study into the effect of deposition temperature

A study into the optimal deposition temperature for ultra-thin La{sub 2}O{sub 3}/Ge and Y{sub 2}O{sub 3}/Ge gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for effective passivation of the Ge interface. A detailed comparison between the two lanthanide oxides (La{sub 2}O{sub 3} and Y{sub 2}O{sub 3}) in terms of band line-up, interfacial features, and reactivity to Ge using medium energy ion scattering, vacuum ultra-violet variable angle spectroscopic ellipsometry (VUV-VASE), X-ray photoelectron spectroscopy, and X-ray diffraction is shown. La{sub 2}O{sub 3} has been found to be more reactive to Ge than Y{sub 2}O{sub 3}, forming LaGeO{sub x} and a Ge sub-oxide at the interface for all deposition temperature studied, in the range from 44 °C to 400 °C. In contrast, Y{sub 2}O{sub 3}/Ge deposited at 400 °C allows for an ultra-thin GeO{sub 2} layer at the interface, which can be eliminated during annealing at temperatures higher than 525 °C leaving a pristine YGeO{sub x}/Ge interface. The Y{sub 2}O{sub 3}/Ge gate stack deposited at lower temperature shows a sub-band gap absorption feature fitted to an Urbach tail of energy 1.1 eV. The latter correlates to a sub-stoichiometric germanium oxide layer at the interface. The optical band gap for the Y{sub 2}O{sub 3}/Ge stacks has been estimated to be 5.7 ± 0.1 eV from Tauc-Lorentz modelling of VUV-VASE experimental data. For the optimal deposition temperature (400 °C), the Y{sub 2}O{sub 3}/Ge stack exhibits a higher conduction band offset (>2.3 eV) than the La{sub 2}O{sub 3}/Ge (∼2 eV), has a larger band gap (by about 0.3 eV), a germanium sub-oxide free interface, and leakage current (∼10{sup −7} A/cm{sup 2} at 1 V) five orders of magnitude lower than the respective La{sub 2}O{sub 3}/Ge stack. Our study strongly points to the superiority of the Y{sub 2}O{sub 3}/Ge system for germanium interface engineering to achieve high performance Ge Complementary Metal Oxide Semiconductor technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε{sub 1}) and imaginary (ε{sub 2}) parts of the dielectric function decrease significantly, and ε{sub 2} shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of Mg doping on the structural and free-charge carrier properties of InN films

We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 10{sup 18} cm{sup −3} to 3.9 × 10{sup 21} cm{sup −3}. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 10{sup 18} cm{sup −3} ≲ [Mg] ≲ 9.0 × 10{sup 19} cm{sup −3}. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Study of optical properties of asymmetric bipolar pulse DC magnetron sputtered Ta{sub 2}O{sub 5} thin film as a function of oxygen content in deposition ambient

Tantalum penta-oxide thin films have been deposited by reactive sputtering technique using asymmetric bipolar pulsed DC source at various oxygen percentage viz. 0 to 50 %. The optical properties of the films have been studied by spectroscopic ellipsometry measurements. It has been observed that compact films with low void fraction, high refractive index and band gap can be obtained by the above technique with oxygen percentage in the range of 30–40%. The films deposited with zero or very low oxygen content have high deposition rate and yield metal rich films with large voids, defects, low band gap and high refractive index. Similarly films deposited with >40% oxygen content again contain voids and defects due to the presence of large amount of gas molecules in the sputtering ambient.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Phase diagram of the CF{sub 4} monolayer and bilayer on graphite

We report an experimental study of physisorbed monolayers and bilayers of CF{sub 4} on graphite using infrared reflection absorption spectroscopy supplemented by ellipsometry. The symmetric C–F stretch mode ν{sub 3} near 1283 cm{sup −1} in the gas is strongly blue shifted in the film by dynamic dipole coupling. This blue shift provides a very sensitive measure of the inter-molecular spacing in the monolayer and, less directly, in the bilayer. We find that important corrections are necessary to the volumetric coverage scales used in previous heat capacity and x-ray diffraction studies of this system. This requires quantitative and some qualitative changes to the previously proposed phase diagram. We find evidence for a new phase transition in the middle of the hexagonal incommensurate region and construct new phase diagrams in both the variables coverage-temperature and chemical potential-temperature. We determine the compressibility and thermal expansion in the low-pressure hexagonal incommensurate phase and values for the entropy change in several phase transitions. Below about 55 K there is evidence of solution of up to 7% of an impurity, most likely CO, in our monolayer but not the bilayer film.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Extracting the effective mass of electrons in transparent conductive oxide thin films using Seebeck coefficient

A method is proposed that combines Seebeck coefficient and carrier concentration to determine the electron effective mass of transparent conductive oxide (TCO) thin films. Experiments were conducted to test the validity of this approach on the transparent conductive Ga-doped ZnO thin films deposited by magnetron sputtering. An evident agreement of the calculated electron effective mass of the films is observed between the proposed approach and the previous studies. Besides, the optical carrier concentration and mobility derived from the calculated electron effective mass and spectroscopic ellipsometry using a complex dielectric function are consistent with those from direct Hall-effect measurement. The agreements suggest that Seebeck coefficient can serve as an alternative tool for extracting the effective mass of electrons in TCO films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ordinary and extraordinary dielectric functions of rutile SnO{sub 2} up to 20 eV

Spectroscopic ellipsometry at room temperature is applied in order to determine the ordinary (ε{sub ⊥}) and extraordinary (ε{sub ∥}) dielectric functions (DFs) of rutile SnO{sub 2} corresponding to electric field (E) polarization perpendicular (E⊥c) and parallel (E∥c) to the optical axis (c), respectively. Strong anisotropic behavior is found for the full spectral range from 0.5 up to 20 eV. The onsets of strong absorption are found at 4.28 eV and 5.42 eV for E⊥c and E∥c, respectively. A dipole-forbidden band gap at (3.59 ± 0.2) eV at room temperature is found by line shape fits to the imaginary parts of the DFs. Further high-energy transitions are resolved. Their accurate energy values are obtained by fitting the second derivatives of the DFs. Comparison to published DFs calculated by ab-initio theory demonstrates that the electron-hole interaction in SnO{sub 2} is strong and has to be included for interpretation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ellipsometric characterization and density-functional theory analysis of anisotropic optical properties of single-crystal α-SnS

We report on the anisotropic optical properties of single-crystal tin monosulfide (SnS). The components ε{sub a}, ε{sub b}, and ε{sub c} of the pseudodielectric-function tensor (ε)=(ε₁)+i(ε₂) spectra are taken from 0.73 to 6.45 eV by spectroscopic ellipsometry. The measured (ε) spectra are in a good agreement with the results of the calculated dielectric response from hybrid density functional theory. The (ε) spectra show the direct band-gap onset and a total of eight above-band-gap optical structures that are associated with the interband-transition critical points (CPs). We obtain accurate CP energies by fitting analytic CP expressions to second-energy-derivatives of the (ε) data. Their probable electronic origins and implications for photovoltaic applications are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films

Ultrafast pump-probe transient reflectance (TR) spectroscopy was used to study carrier dynamics in an epitaxial perovskite oxide thin film of LaFeO{sub 3} (LFO) with a thickness of 40 unit cells (16 nm) grown by molecular beam epitaxy on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT). TR spectroscopy shows two negative transients in reflectance with local maxima at ∼2.5 eV and ∼3.5 eV which correspond to two optical transitions in LFO as determined by ellipsometry. The kinetics at these transients were best fit with an exponential decay model with fast (5–40 ps), medium (∼200 ps), and slow (∼ 3 ns) components that we attribute mainly to recombination of photoexcited carriers. Moreover, these reflectance transients did not completely decay within the observable time window, indicating that ∼10% of photoexcited carriers exist for at least 3 ns. This work illustrates that TR spectroscopy can be performed on thin (<20 nm) epitaxial oxide films to provide a quantitative understanding of recombination lifetimes, which are important parameters for the potential utilization of perovskite films in photovoltaic and photocatalytic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation of ferroelectric domains in thin films of vinylidene fluoride oligomers

High-resolution vector piezoresponse force microscopy (PFM) has been used to investigate ferroelectric domains in thin vinylidene fluoride oligomer films fabricated by the Langmuir-Blodgett deposition technique. Molecular chains are found to be preferentially oriented normal to the substrate, and PFM imaging shows that the films are in ferroelectric β-phase with a predominantly in-plane polarization, in agreement with infrared spectroscopic ellipsometry and X-ray diffraction measurements. The fractal analysis of domain structure has yielded the Hausdorff dimension (D) in the range of ∼1.3–1.5 indicating a random-bond nature of the disorder potential, with domain size exhibiting Landau-Lifshitz-Kittel scaling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural, optical, and electrical properties of strained La-doped SrTiO{sub 3} films

The structural, optical, and room-temperature electrical properties of strained La-doped SrTiO{sub 3} epitaxial thin films are investigated. Conductive La-doped SrTiO{sub 3} thin films with concentration varying from 5 to 25% are grown by molecular beam epitaxy on four different substrates: LaAlO{sub 3}, (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7}, SrTiO{sub 3}, and DyScO{sub 3}, which result in lattice mismatch strain ranging from −2.9% to +1.1%. We compare the effect of La concentration and strain on the structural and optical properties, and measure their effect on the electrical resistivity and mobility at room temperature. Room temperature resistivities ranging from ∼10{sup −2} to 10{sup −5} Ω cm are obtained depending on strain and La concentration. The room temperature mobility decreases with increasing strain regardless of the sign of the strain. The observed Drude peak and Burstein-Moss shift from spectroscopic ellipsometry clearly confirm that the La addition creates a high density of free carriers in SrTiO{sub 3}. First principles calculations were performed to help understand the effect of La-doping on the density of states effective mass as well as the conductivity and DC relaxation time.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dielectric function in the NIR-VUV spectral range of (In{sub x}Ga{sub 1−x}){sub 2}O{sub 3} thin films

We determined the dielectric function of the alloy system (In{sub x}Ga{sub 1−x}){sub 2}O{sub 3} by spectroscopic ellipsometry in the wide spectral range from 0.5 eV to 8.5 eV and for In contents ranging from x = 0.02 to x = 0.61. The predicted optical transitions for binary, monoclinic β-Ga{sub 2}O{sub 3}, and cubic bcc-In{sub 2}O{sub 3} are well reflected by the change of the dielectric functions' lineshape as a function of the In content. In an intermediate composition range with phase-separated material (x ≈ 0.3…0.4), the lineshape differs considerably, which we assign to the presence of the high-pressure rhombohedral InGaO{sub 3}-II phase, which we also observe in Raman experiments in this range. By model analysis of the dielectric function, we derived spectra of the refractive index and the absorption coefficient and energy parameters of electronic band-band transitions. We discuss the sub-band gap absorption tail in relation to the influence of the In 4d orbitals on the valence bands. The data presented here provide a basis for a deeper understanding of the electronic properties of this technologically important material system and may be useful for device engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm{sup 2}/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Refractive index of erbium doped GaN thin films

GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗