Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Electrical breakdown”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15

An efficient solution of low-frequency magnetic problems with voltage sources using all-frequency stable formulation

The modeling and simulation of magnetic problems at low frequencies are considered in this paper. When excited with a voltage source, conduction current is induced in the circuit of interest, which generates the magnetic field. This type of problems is modeled using the all-frequency stable formulation, which employs the potential description of fields with an inhomogeneous Coulomb gauge. With the aid of the stable formulation, the low-frequency breakdown problem is circumvented and both electric and magnetic fields can be solved in a single simulation. To solve large magnetic problems efficiently, it is necessary to employ an iterative solver with an efficient preconditioner. In this work, a preconditioner based on the incomplete LU decomposition is constructed and applied in a wide frequency range. Several numerical examples are given to demonstrate the performance of the proposed method.

Mekonnen, Minyechil↗

Applications of Electrified Dust and Dust Devil Electrodynamics to Martian Atmospheric Electricity

Atmospheric transport and suspension of dust frequently brings electrification, which may be substantial. Electric fields of 10 kV m(exp. -1) to 100 kV m(exp. -1) have been observed at the surface beneath suspended dust in the terrestrial atmosphere, and some electrification has been observed to persist in dust at levels to 5 km, as well as in volcanic plumes. The interaction between individual particles which causes the electrification is incompletely understood, and multiple processes are thought to be acting. A variation in particle charge with particle size, and the effect of gravitational separation explains to, some extent, the charge structures observed in terrestrial dust storms. More extensive flow-based modelling demonstrates that bulk electric fields in excess of 10 kV m(exp. -1) can be obtained rapidly (in less than 10 s) from rotating dust systems (dust devils) and that terrestrial breakdown fields can be obtained. Modelled profiles of electrical conductivity in the Martian atmosphere suggest the possibility of dust electrification, and dust devils have been suggested as a mechanism of charge separation able to maintain current flow between one region of the atmosphere and another, through a global circuit. Fundamental new understanding of Martian atmospheric electricity will result from the ExoMars mission, which carries the DREAMS (Dust characterization, Risk Assessment, and Environment Analyser on the Martian Surface) MicroARES (Atmospheric Radiation and Electricity Sensor) Instrumentation to Mars in 2016 for the first in situ electrical measurements.

Lighting Discharge↗

Hybrid BaTiO 3 /SiN x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance

In this Letter, we demonstrate hybrid GaN lateral Schottky barrier diodes with enhanced breakdown characteristics and a low turn-on voltage. These diodes incorporate a lateral Schottky barrier in combination with a high permittivity material beneath the field plate, enabling high average breakdown fields and a low turn-on voltage. Average electric fields up to 2.38 MV/cm were achieved for devices with an anode–cathode spacing of 4 μm, while maintaining with a turn-on voltage of 0.48 V. In contrast, SiN x /AlGaN/GaN control lateral Schottky diodes displayed an average breakdown field of ~0.7 MV/cm for devices with similar dimensions with a turn-on voltage of 0.46 V. The use of a high-permittivity dielectric can more effectively utilize the high breakdown fields in wide bandgap materials by proper management of the electric field. This demonstration provides an innovative way to integrate high-permittivity materials with GaN lateral devices for improved breakdown and resistance characteristics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Inherent time delay for dielectric breakdown in shock-loaded x-cut quartz

Dielectric breakdown in shock-loaded x-cut quartz is examined under conditions of both impact loading and Q-switched laser-irradiation loading. It is observed that breakdown is characterized by an inherent time delay which depends on the magnitude of the electric field. For pulse duration less than about 30 ns, dielectric breakdown is not observed.

Graham, R. A.↗

Estimating the Electric Fields Driving Lightning Dart Leader Development With BIMAP‐3D Observations

Abstract In this paper, a numerical dart leader model has been implemented to understand the leader's development and the corresponding electric field changes observed by the 3D broadband mapping and polarization (BIMAP‐3D) system. The model assumes the extending leader channel is equipotential and has a linear charge distribution induced by an ambient electric field. The charge distribution induced by the ambient field can be used to model the electric field change at the ground. We then find the ambient electric field which best fits the field change measurements at the two BIMAP stations. The estimated ambient electric field decreases in the direction of dart leader propagation. Our observations and modeling results are consistent with our earlier hypothesis that dart leader speed is proportional to the electric field at the leader tip. The model also supports our earlier analysis that leader speed variations near branch junctions were due to previous charge deposits near the junctions. The modeled tip electric field is generally lower than the breakdown field unless the pre‐dart‐leader channel has a significant temperature of 3,000 K. This is consistent with the fact that dart leaders typically do not form new branches into the virgin air. Furthermore, the tip field is generally close to the negative streamer stability field at ambient temperatures, explaining the nature of the narrow and well‐defined channel structure. In addition to the charge distribution and the ambient and tip electric field, the development of the channel potential and current distribution are also presented.

3D lightning mapping↗

Temperature Inhibition of Plasma-Driven Methane Conversion in DBD Systems

Low-temperature non-thermal plasmas produce highly reactive chemical environments made up of electrons, ions, radicals, and vibrationally excited molecules. These reactive species, when combined with catalysts, can help drive thermodynamically unfavorable chemical reactions at low temperatures and atmospheric pressure. The conversion of methane (CH 4 ) to produce other value-added chemicals is a good model system because of its applicability to a wide range of industries. To effectively create these plasma catalytic systems, a fundamental understanding of the plasma-phase chemistry alone is imperative. While there have been many studies on methane plasmas and how certain operating conditions (i.e., gas composition and power) affect the plasma, there is limited understanding on how changing bulk reaction temperature affects the plasma properties and ensuing plasma chemistry. Here, in this work, we use a dielectric barrier discharge to investigate the effects of temperature on the reaction chemistry and the plasma’s electrical properties in various methane-gas mixtures. Results show that increasing temperature leads to a reduction in methane conversion as well as changes to both the gas and dielectric material pre-breakdown, which manifests itself in temperature-dependent electrical properties of the plasma. Experiments at various temperatures and power show a positive correlation between key electrical plasma properties (average charge and lifetime per filament) and the measured methane conversion as a function of temperature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Spatiotemporally resolved measurements of electric field around a piezoelectric transformer using electric-field induced second harmonic (E-FISH) generation

When a piezoelectric transformer (PT) is actuated at its second harmonic frequency by a low input voltage, the generated electric field at the distal end can be sufficient to breakdown the surrounding gas, making them attractive power sources for non-equilibrium plasma generation. Understanding the potential and electric fields produced in the surrounding medium by the PT is important for effectively designing and using PT plasma devices. In this work, the spatiotemporally resolved characteristics of the electric field generated by a PT operating in open air have been investigated using the femtosecond electric field-induced second harmonic generation (E-FISH) method. Here, electric field components were determined by simultaneously conducting E-FISH measurements with the incident laser polarized in two orthogonal directions relative to the PT crystal. Results of this work demonstrate the spatial distribution of electric field around the PT’s output distal end and how it evolves as a function of time. Notably, the strongest electric field appears on the face of the PT’s distal surface, near the top and bottom edges and decreases by approximately 70% over 3 mm. The time delay between the PT’s input voltage and measured electric field indicates that there is an about 0.45 phase difference between the PT’s input voltage and output signal.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Higher Harmonics in Multipactor Induced Plasma Ionization Breakdown near a Dielectric Surface

In this Letter, the novel physics of higher harmonic (HH) generation of the normal electric field near a dielectric surface is reported in multipactor induced plasma ionization breakdown, as determined by kinetic particle-in-cell simulations. The observed HH frequency is around ten times the fundamental rf driving frequency, but lower than the electron plasma frequency. A theory is constructed which indicates that stream plasma interaction-induced instability is the mechanism of HH generation in the collisional regime. The HH frequency and its corresponding growth rate of the HH oscillation amplitude from the theory are in good agreement with kinetic particle-in-cell simulations.

60 APPLIED LIFE SCIENCES↗

High-voltage 6H-SiC p-n junction diodes

A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

Matus, L. G.↗

Overview of recent experimental results on the EAST Tokamak

Since the last IAEA-FEC in 2021, significant progress on the development of long pulse steady state scenario and its related key physics and technologies have been achieved, including the reproducible 403 s long-pulse steady-state H-mode plasma with pure radio frequency (RF) power heating. A thousand-second time scale (~1056 s) fully non-inductive plasma with high injected energy up to 1.73 GJ has also been achieved. The EAST operational regime of high β P has been significantly extended (H 98y2 > 1.3, β P ~ 4.0, β N ~ 2.4 and n e /n GW ~ 1.0) using RF and neutral beam injection (NBI). The full edge localized mode suppression using the n = 4 resonant magnetic perturbations has been achieved in ITER-like standard type-I ELMy H-mode plasmas with q 95 ≈ 3.1 on EAST, extrapolating favorably to the ITER baseline scenario. The sustained large ELM control and stable partial detachment have been achieved with Ne seeding. The underlying physics of plasma-beta effect for error field penetration, where toroidal effect dominates, is disclosed by comparing the results in cylindrical theory and MARS-Q simulation in EAST. Breakdown and plasma initiation at low toroidal electric fields (<0.3 V m -1 ) with EC pre-ionization is developed. A beneficial role on the lower hybrid wave injection to control the tungsten concentration in the NBI discharge is observed for the first time in EAST suggesting a potential way toward steady-state H-mode NBI operation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗

Method of disjoining adhesively bonded electronic cordwood modules

Embedment of resistive heating elements in a cordwood module used for packaging electronic components, facilitates separation of the adhesive bond between the module, and metal heat sink and the potting material without damaging the components. Electrical power applied to the elements causes breakdown of bonding material.

Sacramone, P. J.↗

Experimental and analytic studies of the triggered lightning environment of the F106B

The triggered lightning environment of the F106B aircraft is investigated. Scale modeling of the F106B with a metallized model was done to measure electric field enhancement factors on the aircraft and on canonically shaped conducting objects. These are then compared to numerically determined quantities. Detailed numerical modeling is done of the development of the triggered lightning channel. This is done using nonlinear air chemistry models to model a variety of physical phenomena which occur in a triggered lightning event. The effect of a triggered lightning strike on internal wires in the F106B is investigated using finite difference models and transmission line models to calculate the electromagnetic coupling of lightning currents through seams and joints of the aircraft to internal cables. Time domain waveforms are computed and compared to measured waveforms. The effect of thunderstorm particles on the initial triggering of a lightning strike is investigated. The electric field levels needed to cause air breakdown in the presence and absence of thunderstorm particles are calculated. This is done as a function of the size, shape, and density of the particles.

Rudolph, Terence↗

Near-equilibrium growth of thick, high quality beta-SiC by sublimation

A close spaced near-equilibrium growth technique was used to produce thick, high quality epitaxial layers of beta-silicon carbide. The process utilized a sublimation method to grow morphologically smooth layers. The beta silicon carbide growth layers varied from about 200 to 750 microns in thickness. Chemical vapor deposition grown, 2-10 microns, beta silicon carbide films were used as seeds at 1860 and 1910 C growth temperatures. The respective average growth rates were 20 and 30 microns per hour. The layers are p-type with a 3.1 x 10 exp 17/cu cm carrier concentration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdown values ranged from 25 to 60 V. These measurements represent the highest values reported for 3C-SiC.

Shields, Virgil B.↗

Radioimaging for real-time tracking of high-voltage breakdown

An interferometric radioimager provides real-time, high-fidelity radioimaging of high voltage breakdown (HVB) both internal and external to electrical components at sub-nanosecond and sub-millimeter resolution and has an ability to resolve multiple/spatially-extensive HVB simultaneously. Therefore, radioimaging can be used to screen for early life weakness/failure and enable non-destructive screening of defective electrical components. In particular, radioimaging can detect precursors to catastrophic HVB, allowing for early detection of weakness in critical electrical components. Radioimaging can also be used to track HVB and pinpoint defects in electrical components real time, including transformers, capacitors, cables, switches, and microelectronics.

Tilles, Julia Napolin↗

TPSAS-NF1676L-31381-DND

- Accumulation of excess negative charge generates potential differences between spacecraft ground and space (frame potential), between two points on the spacecraft surface or within materials (differential potential) - An electrostatic discharge (ESD) results when electric fields associated with potential differences (E = -∇Φ) exceed the dielectric breakdown strength of materials allowing charge to flow in an arc - Magnitude of damage depends on energy available to an arc E = ½CV^2 - Charging to a potential V depends on electrical properties of materials - Surface and volume resistivity - Dielectric constant - Secondary and backscattered electron yields, photoemission yields - Dielectric breakdown strength

Joseph I. Minow↗

A measurement technique of time-dependent dielectric breakdown in MOS capacitors

The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.

Li, S. P.↗