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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Measuring the Burgers vector of dislocations with dark-field X-ray microscopy

The subsurface dynamics of dislocations are essential to many properties of bulk crystalline materials. However, it is challenging to characterize a bulk crystal by conventional transmission electron microscopy (TEM) due to the limited penetration depth of electrons. A novel X-ray imaging technique – dark-field X-ray microscopy (DFXM) – was developed to image hierarchical dislocation structures in bulk crystals. While today's DFXM can effectively map the line structures of dislocations, it is still challenging to quantify the Burgers vectors, the key characterization governing the dislocation behaviors. Here, we extend the 'invisibility criterion' formalism from the TEM theory to the geometrical-optics model of DFXM and demonstrate the consistency between DFXM and dark-field TEM using multi-diffraction-peak imaging for a single edge dislocation. Due to the practical difficulty of multi-peak DFXM experiments, we further study how the Burgers vector effect is encoded for a single-peak DFXM experiment. Using the geometrical-optics DFXM simulation, we explore the asymmetry of rocking tilt scans at different rolling tilts and develop a new method to characterize the Burgers vector. The conclusions of this study advance our understanding of the use of DFXM in characterizing individual dislocations, enabling the connection from bulk DFXM imaging to dislocation mechanics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Role of interfaces on the mechanical response of accumulative roll bonded nanometallic laminates investigated via dislocation dynamics simulations

Unraveling the effects of continuous dislocation interactions with interfaces, particularly at the nanometer length scales, is key to a broader understanding of plasticity, to material design and to material certification. To this end, this work proposes a novel discrete dislocation dynamics-based model for dislocation interface interactions tracking the fate of residual dislocation on interfaces. This new approach is used to predict the impact of dislocation/interface reactions on the overall mechanical behavior of accumulative roll bonded nanometallic laminates. The framework considers the dynamic evolution of the interface concurrent with a large network of dislocations, thus, accounting for the local short and long range effects of the dislocations under the external boundary conditions. Specifically, this study focuses on two-phase Fe/Cu nanometallic laminates, and investigates the role of the underlying elastic and plastic contrast of the Fe and the Cu layers on the composite response of the material. Moreover, the role of initial microstructures, resulting from processing is also investigated. Subsequently, the model is used to examine the effect of layer thickness and interface orientation relationship on the residual stresses of the relaxed microstructure. The associated mechanical response of these laminates are compared when loaded under normal direction compression, as well as shear compression. Finally, this work predicts a dominant effect of the layer thickness, as compared to the interface orientation relationship, on the macroscopic response and on the residual stresses of these nanolaminates, while the local dislocation transmission propensity through the interface is significantly influenced by the corresponding orientation relationship.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Dislocations With Edge Components in Nanocrystalline bcc Mo

We report high-resolution transmission electron microscopy (HRTEM) observation of a high density of dislocations with edge components (approximately 1016 m-2) in nanocrystalline (NC) body-centered cubic (bcc) Mo prepared by high-pressure torsion. We also observed for the first time of the 1/2 <111> and <001> pure edge dislocations in NC Mo. Crystallographic analysis and image simulations reveal that the best way using HRTEM to study dislocations with edge components in bcc systems is to take images along <110> zone axis, from which it is possible to identify 1/2 <111> pure edge dislocations, and edge components of 1/2 <111> and <001> mixed dislocations. The <001> pure edge dislocations can only be identified from <100> zone axis. The high density of dislocations with edge components is believed to play a major role in the reduction of strain rate sensitivity in NC bcc metals and alloys.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2022

Dislocation-Limited Thermal Conductivity in LiF: Revisiting Perturbative Models

We revisit models to describe phonon-dislocation interactions and resulting dislocation-limited thermal conductivity (k), particularly as applied to describe the temperature-dependent k behavior of LiF with significant dislocation densities. Coupling semiempirical models of phonon scattering from dislocation strain fields provided by Klemens and Carruthers with density functional theory description of the phonons and input parameters, we find that both models significantly overpredict the measured k of LiF, as found previously. However, more direct application of the quantum perturbation theory description, from which the models were derived, gives significantly stronger phonon-dislocation scattering and strongly underpredicts the measured k data. We revisit the derivation of phonon-dislocation-strain field scattering and provide numerical details regarding its implementation. This work demonstrates that quantum perturbative calculations, now accessible to modern computational architectures, may provide a reasonable description of dislocation-limited k in materials as governed by phonon-strain field interactions provided that questions regarding the relevant strain field range can be resolved.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Dislocation transmission across Σ3{112} incoherent twin boundary: a combined atomistic and phase-field study

Grain boundaries (GBs) in polycrystalline materials act as impediments to dislocation motion and result in strengthening. Understanding slip transmission through GBs, specifically twin boundaries, is essential to understand the plastic deformation behavior of polycrystalline fcc materials. Here the interaction between a glide dislocation and Σ3{112} incoherent twin boundary (ITB) in copper is investigated using a combined atomistic and mesoscale approach. The material parameters and structure of the GB in the mesoscale phase field dislocation dynamics (PFDD) model are informed from Molecular Statics (MS) simulations. The structural unit of the ITB consists of an array of three partial dislocations. The interaction between a glide dislocation impinging on each of the GB partial dislocations is investigated using both PFDD and Molecular Dynamics (MD) with two boundary conditions. Transmission planes predicted by both PFDD and MD (NVT) are in agreement, and show that not all transmission events are direct. Critical transmission stresses predicted by PFDD are in the range of 276 MPa to 1380 MPa, while MD predictions are in the range from 100 MPa to 700 MPa. The PFDD and MD predictions of slip transmission are explained using dislocation theory based on isotropic linear elasticity.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The role of deviatoric stress and dislocations on the α to ω phase transformation in Ti

Under extreme conditions, α-Ti becomes unstable and transforms either into β-Ti at high temperature or into ω-Ti at high pressure. In what concerns the α to ω phase transformation (PT), there has been a wide range of experimentally reported transition pressures from approximately 2 to 15 GPa at room temperature. Deviatoric stresses and internal defects are often assumed to be the root cause of this variation. Here, in this study, these postulates are revisited using both continuum mechanics and molecular dynamics (MD) simulations. First, a simple continuum model, assuming linear elasticity and isotropic plasticity, is developed to describe the effects of applied stress and dislocations on the stability of an ω nucleus in an infinite α domain. Second, a new MD simulation method is developed to generate an ω nucleus in the α domain utilizing the displacement field identified from the topological analysis. Results from MD simulations show that despite the fact that phase diagrams typically delineate the limits between two phases in terms of only P and T, deviatoric stress promotes the α to ω phase transformation by reducing the critical radius above which an ω nucleus is stable. Furthermore, the required deviatoric stress to nucleate and stabilize a nanoscale ω nucleus is likely emanating from the internal stress of defects such as dislocations. The MD-informed micromechanics models are used to identify favorable configurations where dislocations help favor the α to ω transformation. These configurations show that the interaction with a basal or prismatic dislocation reduces the critical radius of a ω nucleus by about 10 or 16 %, respectively. In addition, prismatic edge dislocations are found to promote the growth of ω nucleus when interacting with the ($\bar{1}$$\bar{1}$20) α //(0001) ω interface. Importantly, a simple model of the arrival of dislocation at an ω nucleus suggests that PT does not necessarily require a pile-up to be present but could alternatively be mediated by a constant rapid flow of dislocations.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Reduced dislocation density in Ga x In 1–x P compositionally graded buffer layers through engineered glide plane switch

In this work we develop control over dislocation glide dynamics in Ga x In 1-x P compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in Ga x In 1-x P CGBs. When ordered Ga x In 1-x P is graded from the GaAs lattice constant to InP, the order parameter ..eta.. decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a Ga x In 1-x P CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage Ga x In 1-x P CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.

14 SOLAR ENERGY↗
DOE OSTI2019

Combined effect of injected interstitials and He implantation, and cavities inside dislocation loops in high purity Fe-Cr alloys

High purity Fe-Cr alloys with Cr content ranging from 3 to 14 wt% were irradiated by self-ions at 500 °C in dual-beam mode up to 157 displacements per atom (dpa), 17 appm He/dpa. Transmission electron microscopy (TEM) on focused ion beam foils revealed the depth distribution of irradiation induced cavities and dislocation loops. A detailed quantitative analysis of cavity microstructure was performed on Fe14%Cr, while Fe(3, 5, 10, 12)%Cr were analyzed qualitatively. A homogeneous distribution of small cavities were observed up to the damage peak. From surface to the damage peak, cavity number density increased almost linearly. The cavity microstructure changed drastically at and after the damage peak, where the size increased and number density decreased. Most notably, the microstructure consisted of a striking mixture of heterogeneously nucleated cavities inside dislocation loops and freely nucleated cavities in the matrix. Further, the depth-dependent void swelling increased continuously along the damage depth. This contrasts with most ion irradiation results where suppression of void swelling occurs adjacent to the damage peak due the injected interstitial effect. We hypothesize a plausible mechanism of the observed swelling variation based on a combined effect of the injected interstitials and helium implantation near the damage peak by comparing the results with those in pure iron irradiated under same conditions. This synergistic effect may develop cavity microstructures which do not necessarily reflect microstructures expected due to injected interstitial effect and can be easily wrongly interpreted. The depth dependent dislocation loop microstructure was studied qualitatively in Fe14%Cr sample. Up to the damage peak, a complex dense network of dislocations formed due to the interaction/impingement of the dislocation loops. Individually resolvable loops were only observed after the damage peak, where their association with cavities was noted. Furthermore helium also induced heterogeneous cavity nucleation on dislocations constituting a grain boundary and on pre-existing dislocation lines.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Molecular dynamics simulations of radiation cascade evolution near cellular dislocation structures in additively manufactured stainless steels

The dislocation dense cellular structures observed in additively manufactured (AM) stainless steels can allow these materials to have enhanced strength and ductility compared to conventionally manufactured materials. Effective design of radiation resistant materials often necessitates creating microstructures containing of a high density of dislocations that act as sinks for radiation induced defects. This work uses molecular dynamics simulations to study the impact of pre-existing defects on radiation damage in stainless steel 316L fabricated by the laser powder bed fusion process. The evolution of synthetically generated dislocations in a crystal system in response to multiple radiation collision cascades suggest that dislocation dense regions reduce the probability of surviving point defects forming clusters. This finding seems to result from the dislocation cores’ ability to absorb point defects, thereby limiting the formation of clusters during the recombination phase. However, after successive cascades, the ability of the dislocation entanglement to prevent defect formation is diminished and defect cluster formation trends to an equilibrium. Accordingly, it is hypothesized that in an experimental setting the dislocation cells will initially act as neutral sinks for point defects, potentially delaying the onset of radiation damage effects; but, these structures will be degraded due to radiation-enhanced diffusion and lose their effectiveness at doses above 1.5–2 displacements per atom. Nevertheless, the ability to produce complex and feature-specific microstructures suggests promise for the design of radiation tolerant materials using AM methods.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Dislocation-density evolution and pileups in bicrystalline systems

Here, a dislocation-density crystalline plasticity (DCP) framework based on total and partial dislocation densities interactions was used to investigate the behavior of Cu/Pb bicrystals with a focus on GB effects. The modeling predictions were validated with bicrystal compression micropillar experiments. A key new aspect of the modeling approach is to account for partial dislocation-densities. A GB formulation that is directly linked to GB energies was used to monitor GB transmission and blockages, such that pileups can be monitored and predicted at the GB interfaces for misorientations. The predictions indicate that pileups can form due to fully and partially blocked slip-rates and perfect and partial dislocation-densities. As the nominal strain increases from five to fifteen percent, dislocation-densities and pileups significantly increase by almost an order of magnitude. The proposed validated approach provides a microstructural scale predictive framework that accounts for a myriad of defects related to the interactions of partial and perfect dislocation densities that interact at highly misoriented GBs; it is these interactions that are critical to the formation and evolution of dislocation-density pileups that can lead to physically limiting stress accumulations in bicrystals.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Application of Dislocation Theory to Minimize Defects in Artificial Solids Built with Nanocrystal Building Blocks

Conspectus. Oriented atomic attachment of colloidal inorganic nanocrystals represents a powerful synthetic method for preparing complex inorganic superstructures. Examples include fusion of nanocrystals into dimer and superlattice structures. If the attachment were perfect throughout, then the resulting materials would have single crystal-like alignment of the individual nanocrystals' atomic lattices. While individual colloidal nanocrystals typically are free of many defects, there are a multitude of pathways that can generate defects upon nanocrystal attachment. These attachment generated defects are typically undesirable, and thus developing strategies to favor defect-free attachment or heal defective interfaces are essential. There may also be some cases where attachment-derived defects are desirable. In this Account, we summarize our current understanding of how these defects arise, in order to offer guidance to those who are designing nanocrystal derived solids. The small size of inorganic nanocrystals means short diffusion lengths to the surface, which favor the formation of nanocrystal building blocks with pristine atomic structures. Upon attachment, however, there are numerous pathways that can lead to atomic scale defects, and bulk crystal dislocation theory provides an invaluable guide to understanding these phenomena. As an example, an atomic step edge can be incorporated into the interface leading to an extra half-plane of atoms, known as an edge dislocation. These dislocations can be well described by the Burgers vector description of dislocations, which geometrically identifies planes in which a dislocation can move. Our in situ measurements have verified that bulk dislocation theory predictions for 1D defects hold true at few-nanometer length scales in PbTe and CdSe nanocrystal interfaces. Ultimately, the applicability of dislocation theory to nanocrystal attachment enables the predictive design of attachment to prevent or facilitate healing of defects upon nanocrystal attachment. We applied similar logic to understand formation of planar (2D) defects such as stacking faults upon nanocrystal attachment. Again concepts from bulk crystal defect crystallography can identify attachment pathways that can prevent or deterministically form planar defects upon nanocrystal attachment. The concepts we discuss work well for identifying favorable attachment geometries for nanocrystal pairs ; however it is currently unclear how to translate these ideas to near-simultaneous multiparticle attachment. Geometric frustration, which prevents nanocrystal rotation, and yet-to-be considered defect generation pathways unique to multiparticle attachment complicate defect-free superlattice attachment. New imaging methods now allow for the direct observation of local attachment trajectories and may enable improved understanding of such multiparticle phenomena. With further refinement, a unified framework for understanding and ultimately eliminating structural defects in fused nanocrystal superstructures may well be achievable in coming years.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Structure and Mobility of Dissociated Vacancies at Twist Grain Boundaries and Screw Dislocations in Ionic Rocksalt Compounds

Interfaces, grain boundaries, and dislocations are known to have significant impact on the transport properties of materials. Even so, it is still not clear how the structure of interfaces influences the mobility and concentration of carriers that are responsible for transport. Using low angle twist grain boundaries in MgO as a model system, we examine the structural and kinetic properties of vacancies. These boundaries are characterized by a network of screw dislocations. Vacancies of both types, Mg and O, are strongly attracted to the dislocation network, residing preferentially at the misfit dislocation intersections (MDIs). However, the vacancies can lower their energy by splitting into two parts, which then repel each other along the dislocation line between two MDIs, further lowering their energy. This dissociated structure has important consequences for transport, as the free energy of the dissociated vacancies decreases with decreasing twist angle, leading to an increase in the net migration barrier for diffusion as revealed by molecular dynamics simulations. Similar behavior is observed in BaO and NaCl, highlighting the generality of the behavior. Finally, we analyze the structure of the dissociated vacancies as a pair of jogs on the dislocation and construct a model containing electrostatic and elastic contributions that qualitatively describe the energetics of the dissociated vacancy. Our results represent the first validation of a mechanism for vacancy dissociation on screw dislocations in ionic materials first discussed by Thomson and Balluffi in 1962.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Dislocation-induced stop-and-go kinetics of interfacial transformations

Most engineering materials are based on multiphase microstructures produced either through the control of phase equilibria or by the fabrication of different materials as in thin-film processing. In both processes, the microstructure relaxes towards equilibrium by mismatch dislocations (or geometric misfit dislocations) across the heterophase interfaces (1-5) . Despite their ubiquitous presence, directly probing the dynamic action of mismatch dislocations has been unachievable owing to their buried nature. In this work, using the interfacial transformation of copper oxide to copper as an example, we demonstrate the role of mismatch dislocations in modulating oxide-to-metal interfacial transformations in an intermittent manner, by which the lateral flow of interfacial ledges is pinned at the core of mismatch dislocations until the dislocation climbs to the new oxide/metal interface location. Together with atomistic calculations, we identify that the pinning effect is associated with the non-local transport of metal atoms to fill vacancies at the dislocation core. These results provide mechanistic insight into solid-solid interfacial transformations and have substantial implications for utilizing structural defects at buried interfaces to modulate mass transport and transformation kinetics.

25 ENERGY STORAGE↗
DOE OSTI2023

Extensive 3D mapping of dislocation structures in bulk aluminum

Abstract Thermomechanical processing such as annealing is one of the main methods to tailor the mechanical properties of materials, however, much is unknown about the reorganization of dislocation structures deep inside macroscopic crystals that give rise to those changes. Here, we demonstrate the self-organization of dislocation structures upon high-temperature annealing in a mm-sized single crystal of aluminum. We map a large embedded 3D volume ( $$100\times 300\times 300$$ 100 × 300 × 300 $$\upmu$$ μ m $$^3$$ 3 ) of dislocation structures using dark field X-ray microscopy (DFXM), a diffraction-based imaging technique. Over the wide field of view, DFXM’s high angular resolution allows us to identify subgrains, separated by dislocation boundaries, which we identify and characterize down to the single-dislocation level using computer-vision methods. We demonstrate how even after long annealing times at high temperatures, the remaining low density of dislocations still pack into well-defined, straight dislocation boundaries (DBs) that lie on specific crystallographic planes. In contrast to conventional grain growth models, our results show that the dihedral angles at the triple junctions are not the predicted 120 $$^{\circ }$$ ∘ , suggesting additional complexities in the boundary stabilization mechanisms. Mapping the local misorientation and lattice strain around these boundaries shows that the observed strain is shear, imparting an average misorientation around the DB of $$\approx$$ ≈ 0.003 to 0.006 $$^{\circ }$$ ∘ .

36 MATERIALS SCIENCE↗
DOE OSTI2023

Chirality and dislocation effects in single nanostructures probed by whispering gallery modes

Nanostructures such as nanoribbons and -wires are of interest as components for building integrated photonic systems, especially if their basic functionality as dielectric waveguides can be extended by chiroptical phenomena or modifications of their optoelectronic properties by extended defects, such as dislocations. However, conventional optical measurements typically require monodisperse (and chiral) ensembles, and identifying emerging chiral optical activity or dislocation effects in single nanostructures has remained an unmet challenge. Here we show that whispering gallery modes can probe chirality and dislocation effects in single nanowires. Wires of the van der Waals semiconductor germanium(II) sulfide (GeS), obtained by vapor–liquid–solid growth, invariably form as growth spirals around a single screw dislocation that gives rise to a chiral structure and can modify the electronic properties. Cathodoluminescence spectroscopy on single tapered GeS nanowires containing joined dislocated and defect-free segments, augmented by numerical simulations and ab-initio calculations, identifies chiral whispering gallery modes as well as a pronounced modulation of the electronic structure attributed to the screw dislocation. Further, our results establish chiral light-matter interactions and dislocation-induced electronic modifications in single nanostructures, paving the way for their application in multifunctional photonic architectures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Here, we analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombination-enhanced climb and glide processes constrained by the epitaxial structure. An examination of the dislocation geometry reveals that the climb process involves the addition of atoms to the extra half plane of the dislocation. Spontaneous emission from the QDs is also dimmer after aging. Additionally, the signature of misfit dislocations in the unaged laser, discernible as sharp dark lines in spatially resolved cathodoluminescence, is replaced by finer, more inhomogeneous contrast upon aging. We speculate that this change arises from vacancy clouds expelled from the dislocation during climb. With this insight, we evaluate the driving forces for dislocation climb that could be at play and discuss the origins of slow degradation in QD lasers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

A transmission electron microscopy study of dislocation propagation and filtering in highly mismatched GaSb/GaAs heteroepitaxy

Monolithic integration of lattice-mismatched semiconductor materials opens up access to a wide range of bandgaps and new device functionalities. However, it is inevitably accompanied by defect formation. A thorough analysis of how these defects propagate and interact with interfaces is critical to understanding their effects on device parameters. In this study, we present a comprehensive study of dislocation networks in the GaSb/GaAs heteroepitaxial system using transmission electron microscopy (TEM). Specifically, the sample analyzed is a GaSb film grown on GaAs using dislocation–reduction strategies such as interfacial misfit array formation and introduction of a dislocation filtering layer. Using various TEM techniques, it is shown that such an analysis can reveal important information on the dislocation behavior including filtering mechanism, types of dislocation reactions, and other interactions with interfaces. A novel method that enables plan-view imaging of deeply embedded interfaces using TEM and a demonstration of independent imaging of different dislocation types are also presented. While clearly effective in characterizing dislocation behavior in GaSb/GaAs, we believe that the methods outlined in this article can be extended to study other heteroepitaxial material systems.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Automated identification and indexing of dislocations in crystal interfaces

Here, we present a computational method for identifying partial and interfacial dislocations in atomistic models of crystals with defects. Our automated algorithm is based on a discrete Burgers circuit integral over the elastic displacement field and is not limited to specific lattices or dislocation types. Dislocations in grain boundaries and other interfaces are identified by mapping atomic bonds from the dislocated interface to an ideal template configuration of the coherent interface to reveal incompatible displacements induced by dislocations and to determine their Burgers vectors. Additionally, the algorithm generates a continuous line representation of each dislocation segment in the crystal and also identifies dislocation junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗