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At least 271 records · Page 15

Phase 2: Array automated assembly task low cost silicon solar array project

Several microwave systems for use in solar cell fabrication were developed and experimentally tested. The first system used a standing wave rectangular waveguide horn applicator. Satisfactory results were achieved with this system for impedance matching and wafer surface heating uniformity. The second system utilized a resonant TM sub 011 mode cylindrical cavity but could not be employed due to its poor energy coupling efficiency. The third and fourth microwave systems utilized a circular waveguide operating in the TM sub 01 and TM sub 11 but had problems with impedance matching, efficiency, and field uniformity.

Jones, G. T.↗

Silicon ribbon growth using scanned lasers

The recent demand for low-cost photovoltaic arrays has renewed the interest in growing silicon in ribbon form. The approach used in the present paper for the growth of low-cost silicon ribbon is shown schematically. A pair of scanned, focused CO2 laser beams is directed onto both sides of a preformed silicon ribbon. A narrow (about 1 mm high) molten zone is formed across the full width of the ribbon. As the silicon ribbon is passed through the laser-heated zone, large grains are produced in the recrystallized ribbon. The laser beam path is outlined schematically. As a general rule, the lenses are not positioned so as to bring the laser beams to a fine focus, since highly focused beams would vaporize the silicon surface rather than serve to melt the bulk. Silicon ribbon has been grown at rates up to 13.3 cm/min by this approach. The best solar cell fabricated so far on this material has a conversion efficiency of 12.7%.

Baghdadi, A.↗

Low-cost, high-efficiency silicon by heat exchanger method and fixed abrasive slicing technique

The paper describes the heat exchanger method (HEM) for growing silicon crystals. The problem of ingot cracking was solved by using a graded structure silica crucible, and vacuum processing eliminated expensive high-purity argon. Solar cells fabricated from HEM silicon demonstrated conversion efficiencies up to 15% (AM1) at low cost, using square cross-section, single crystal silicon. A modified multiblade slurry machine was adapted for multiwire fixed abrasive slicing of silicon which uses a diamond attached to wires; this method provides a conversion ratio of 1.08 sq m of wafer per kg of silicon ingot, and produces wafers free of edge chipping with a surface damage of 3-5 microns.

Khattak, C. P.↗

The planar multijunction cell - A new solar cell for earth and space

A new family of high-voltage solar cells, called the planar multijunction (PMJ) cell is being developed. The new cells combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell area. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Evans, J. C., Jr.↗

GaAs workshop report

The advantages of GaAs over silicon are discussed. The substrate problem in solar cell fabrication was reviewed. Future trends in solar energy technology were predicted with special emphasis on cost of production.

Kamath, G. S.↗

The HEWAC pilot line experience

Advanced silicon solar cells with both electrical contacts on the back side of the cell are described. These high efficiency wrap around contact solar cells (HEWACS) utilize a screen printed dielectric insulation layer to isolate the 'n' and 'p' contacts from each other. Development of a device exhibiting high AMO conversion efficiencies is addressed along with the processing of such cells to a point where cell fabrication can be carried out by production personnel under operating production line conditions.

Gillanders, M.↗

Development of a polysilicon process based on chemical vapor deposition, phase 1

The development of a dichlorosilane-based reductive chemical vapor deposition process for the production of polycrystalline silicon is discussed. Experimental data indicate that the ease of ignition and explosion severity of dichlorosilane (DCS)/air mixtures is substantially attenuated if the DCS is diluted with hydrogen. Redesign of the process development unit to accommodate safety related information is described. Several different sources of trichlorosilane were used to generate a mixture of redistributed chlorosilanes via Dowex ion exchange resin. The unseparated mixtures were then fed to an experimental reactor in which silicon was deposited and the deposited silicon analyzed for electrically active impurities. At least one trichlorosilane source provided material of requisite purity. Silicon grown in the experimental reactor was converted to single crystal material and solar cells fabricated and tested.

Mccormick, J.↗

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

The effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells are defined. The results form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost benefit relationships for the use of less pure, less costly solar grade silicon.

Hopkins, R. H.↗

A Module Experimental Process System Development Unit (MEPSDU)

The purpose of this program is to demonstrate the technical readiness of a cost effective process sequence that has the potential for the production of flat plate photovoltaic modules which met the price goal in 1986 of $.70 or less per watt peak. Program efforts included: preliminary design review, preliminary cell fabrication using the proposed process sequence, verification of sandblasting back cleanup, study of resist parameters, evaluation of pull strength of the proposed metallization, measurement of contact resistance of Electroless Ni contacts, optimization of process parameter, design of the MEPSDU module, identification and testing of insulator tapes, development of a lamination process sequence, identification, discussions, demonstrations and visits with candidate equipment vendors, evaluation of proposals for tabbing and stringing machine.

Source record↗

Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques

GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.

Yeh, Y. C. M.↗

Field experience with various slicing methods

Wafer slicing using internal diameter (ID) saw, multiblade slurry (MBS) saw and multiwire slurry (MWS) saw techniques were evaluated. Wafer parameters such as bow, taper, and roughness which may not be important factors for solar cell fabrication, were considerably better for ID saw than those of the MBS and MWS saw. Analysis of add-on slicing cost indicated that machine productivity seems to be a major limiting factor for ID saw, while expendible material costs are a major factor for both MBS and MWS saw. Slicing experience indicated that the most important factors controling final wafer cost are: (1) silicon cost (wafer thickness + kerf loss); (2) add-on slicing cost, and (3) mechanical yield. There is a very strong interaction between these parameters, suggesting a necessity of optimization of these parameters.

Yoo, H. I.↗

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

Li, S. S.↗

Single crystal growth of upgraded metallurgical silicon by HEM for photovoltaic applications

Commercially available metallurgical grade (MG) silicon has high B and P content which is not reduced significantly by directional solidification. By choosing high purity raw materials for an experimental Submerged Electrode Arc Furnace, most of the impurities are reduced to 10 ppmw. Directional solidification of upgraded metallurgical grade (UMG) silicon by the Heat Exchanger Method (HEM) has produced 16 cm x 16 cm cross section ingots with nearly single crystal structure. The main problem encountered during directional solidification was SiC impurities dispersed through the structure. Solar cells fabricated from UMG silicon that was directionally solidified twice by HEM have shown up to 12.33% (am1) conversion efficiency.

Khattak, C. P.↗

Upgrading Metallurgical-Grade Silicon

Closed-loop process produces semiconductor-grade silicon. Metallurgical-grade silicon converted to ultrapure silicon by reacting with hydrogen and silicon tetrahalide to form trihalosilane, purifying this intermediate and again decomposing to high purity silicon in third stage. Heterogeneously and homogeneously nucleated polycrystalline silicon used in semiconductor device applications and in silicon photovoltaic solar cell fabrication.

Woerner, L. M.↗

High-quality Silicon Films Prepared by Zone-melting Recrystallization

The graphite strip heater zone melting recrystallization (ZMR) technique is described. The material properties of the ZMR films, and SOI device results are reviewed. Although our ZMR work is primarily motivated by integrated circuit applications, this work evolved in part from earlier research on laser crystallization of thick amorphous GaAs and Si films, which was undertaken with the goal of producing low cost photovoltaic materials. The ZMR growth process and its effect on the properties of the recrystallized films may contribute some insight to a general understanding of the rapid recrystallization of Si for solar cells. Adaptation of ZMR for solar cell fabrication is considered.

Chen, C. K.↗

A low-cost polysilicon process based on the synthesis and decomposition of dichlorosilane

Major process steps of a dichlorosilane based chemical vapor deposition (CVD) process for the production of polycrystalline silicon have been evaluated. While an economic analysis of the process indicates that it is not capable of meeting JPL/DOE price objectives ($14.00/kg in 1980 dollars), product price in the $19.00/kg to $25.00/kg range may be achieved. Product quality has been evaluated and ascertained to be comparable to semiconductor-grade polycrystalline silicon. Solar cells fabricated from the material are also equivalent to those fabricated from semiconductor-grade polycrystalline silicon.

Mccormick, J. R.↗

Large area space solar cell assemblies

Results of the development of a 34.3 sq cm space solar cell and integral glass cover are presented. Average AM(0) cell efficiency is 14 percent. The cell design includes a high performance back surface reflector yielding a thermal alpha of approximately 0.66. A novel process is described which integrates cell fabrication and encapsulation thereby achieving a reduction of encapsulation cost. Test results indicate the potential of this new technology.

Nowlan, M. J.↗

Liquid-Dopant Fabrication of Solar Cells

Liquid dopants and liquid masks used to produce front and back junctions of solar cells. Resulting cells equal in efficiency to those fabricated by more-expensive gaseous-diffusion technique.

Alexander, Paul, Jr.↗