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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe 2 Nanosheet-Based Channels: Implications for Field-Effect Transistors

We report the fabrication of ohmic van der Waals (vdW) contacts to nearly intrinsic WSe 2 nanosheet-based channels in field-effect transistors (FETs) using degenerately p-doped MoS2 (p + -MoS2) as a contact metal. We demonstrate that accumulation-type ohmic contacts and the high device performance are achievable without electrostatically gating the drain/source contact regions despite the nearly intrinsic nature of WSe 2 . Back-gated WSe 2 FETs with p + -MoS 2 bottom contacts (which screen the back-gate electric field in the drain/source regions) exhibit linear output characteristics, a high on/off ratio of 10 8 , and a high two-terminal field-effect mobility up to ~200 cm2 V –1 s –1 at room temperature. Our theoretical modeling reveals that the p + -MoS 2 /WSe 2 vdW junction behaves like a metal/semiconductor ohmic contact signified by a vanishingly thin space-charge region of ~1 nm on the p + -MoS 2 side and a substantial accumulation layer of free holes on the WSe 2 side, which is further verified by additional temperature-dependent and dual-gated measurements of WSe 2 FETs. We attribute the formation of accumulation-type ohmic contacts free of a Schottky barrier to the near absence of Fermi-level pinning at the vdW interface and the work function of p + -MoS 2 being larger than the ionization energy of WSe 2 . This study represents an important step toward achieving low-resistance ohmic contacts to two-dimensional (2D) semiconductors by eliminating the Fermi-level pinning effects, which is expected to have significant implications for next-generation 2D semiconductor-based nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ultrathin stable Ohmic contacts for high-temperature operation of β -Ga2O3 devices

Beta gallium oxide (β-Ga2O3) shows significant promise in high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperatures present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300–400 °C) due to a combination of nonstoichiometric Ti/Ga2O3 interfacial reactions and kinetically favored Ti diffusion processes. Here, we demonstrate stable Ohmic contacts for Ga2O3 devices operating up to 500–600 °C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5 nm Ti/100 nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 h) at 600 °C in vacuum (≤10−4 Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550 °C in flowing N2. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift toward rectifying interfaces and other interfacial layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Li-Ion Battery Electrode Contact Resistance Estimation by Mechanical Peel Test

Li-ion battery electrode electronic properties, including bulk conductivity and contact resistance, are critical parameters affecting cell performance and fast-charge capability. Contact resistance between the coating and current collector is often the largest electronic resistance in an electrode and is affected by chemical, microstructural, and interfacial variations. Direct measurements of contact resistance and bulk conductivity have proven to be challenging. In their absence, a mechanical electrode peel test is often used to compare adhesion and electrical contact resistance. However, using a micro-flexible-surface probe, contact resistance can be directly determined. Here, this work compares contact resistance and mechanical peel strength of multiple commercial-grade HE5050 and NCM523 cathodes and graphite and silicon anodes. It was found that peel strength correlates well with contact resistance in a carefully curated data set (p < 0.05) and in some situations may be a good metric to estimate electrical properties. However, there were distinct outliers in the data set, indicating that peel strength may not accurately reflect electrical properties when there is significant variation in electrode composition. These results illustrate the value of the micro-flexible-surface probe in quantifying contact resistance and bulk conductivity to better understand how battery composition and processing steps affect microstructure and resulting cell performance.

25 ENERGY STORAGE↗
DOE OSTI2014

Estimating contact rates at a mass gathering by using video analysis: a proof-of-concept project

Current approaches for estimating social mixing patterns and infectious disease transmission at mass gatherings have been limited by various constraints, including low participation rates for volunteer-based research projects and challenges in quantifying spatially and temporally accurate person-to-person interactions. We developed a proof-of-concept project to assess the use of automated video analysis for estimating contact rates of attendees of the GameFest 2013 event at Rensselaer Polytechnic Institute (RPI) in Troy, New York. Video tracking and analysis algorithms were used to estimate the number and duration of contacts for 5 attendees during a 3-minute clip from the RPI video. Attendees were considered to have a contact event if the distance between them and another person was ≤1 meter. Contact duration was estimated in seconds. We also simulated 50 attendees assuming random mixing using a geospatially accurate representation of the same GameFest location. The 5 attendees had an overall median of 2 contact events during the 3-minute video clip (range: 0 6). Contact events varied from less than 5 seconds to the full duration of the 3- minute clip. The random mixing simulation was visualized and presented as a contrasting example. We were able to estimate the number and duration of contacts for five GameFest attendees from a 3-minute video clip that can be compared to a random mixing simulation model at the same location. In conclusion, the next phase will involve scaling the system for simultaneous analysis of mixing patterns from hours-long videos and comparing our results with other approaches for collecting contact data from mass gathering attendees.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2022

Multiscale water drop contact angles at selected silica surfaces

In this paper, multiscale advancing contact angles for glycerol/water drops at silica surfaces are reported for millidrops, submicron-drops, and nanodrops. Selected silica surfaces were muscovite, silicon, and talc. The contact angles for millidrops (1–2 mm) were determined by the traditional sessile drop technique. For submicron-drops (0.1–1.0 μm), a hollow tip Atomic Force Microscope (AFM) procedure was used. The contact angles for nanodrops (~7 nm) were examined from Molecular Dynamics (MD) simulation. The results were compared to evaluate the effect of drop size on the contact angle. In the case of the hydrophobic talc surface, the 75° advancing contact angle did not vary significantly with drop size. For the hydrophilic muscovite surface, the water drop wet the surface and an advancing contact angle of about 10° was found for the millidrops and submicron-drops. However, for the MD simulated nanodrops, attachment and spreading of the ~7 nm drop created a 2D film of molecular dimensions, the contact angle of which was difficult to define and varied from 0° to 17°. Perhaps of equal interest from the MD simulation results was that the spreading of the glycerol/water nanodrop at the muscovite surface resulted in crystallographic directional transport of water molecules to the extremities of the 2D film. Such separation and segregation left the center of the film with an increased concentration of glycerol. Based on these results, the line tension, which has been found in other investigations to account for contact angle decrease with a decrease in drop size, does not seem to be a significant factor in this study.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Current measurements in the intermittent-contact mode of atomic force microscopy using the Fourier method: a feasibility analysis

Atomic force microscopy (AFM) is an important tool for measuring a variety of nanoscale surface properties, such as topography, viscoelasticity, electrical potential and conductivity. Some of these properties are measured using contact methods (static contact or intermittent contact), while others are measured using noncontact methods. Some properties can be measured using different approaches. Conductivity, in particular, is mapped using the contact-mode method. However, this modality can be destructive to delicate samples, since it involves continuously dragging the cantilever tip on the surface during the raster scan, while a constant tip–sample force is applied. In this paper we discuss a possible approach to develop an intermittent-contact conductive AFM mode based on Fourier analysis, whereby the measured current response consists of higher harmonics of the cantilever oscillation frequency. Such an approach may enable the characterization of soft samples with less damage than contact-mode imaging. To explore its feasibility, we derive the analytical form of the tip–sample current that would be obtained for attractive (noncontact) and repulsive (intermittent-contact) dynamic AFM characterization, and compare it with results obtained from numerical simulations. Although significant instrumentation challenges are anticipated, the modelling results are promising and suggest that Fourier-based higher-harmonics current measurement may enable the development of a reliable intermittent-contact conductive AFM method.

14 SOLAR ENERGY↗
NASA NTRSDate not supplied

Contact Multigraph Routing: Overview and Implementation

In Delay Tolerant Networking (DTN), the standard routing algorithm used to navigate time-varying networks has been Contact Graph Routing (CGR). In CGR, a globally distributed list of contacts, periods during which two DTN nodes may communicate, is used to construct a contact graph, in which contacts are vertices. A version of Dijkstra’s algorithm can then be used to find paths through this model of the timevarying network. However, since contact graphs may be large compared to the network, potentially growing with the square of the number of network nodes and linearly with the time interval represented, the resulting algorithm does not scale well with the size of the network or time. Any improvement to the routing algorithm will bring significant returns to scale. In a previous paper, we briefly introduced an alternative to the contact graph model for routing. This alternative model is based on a multigraph (a graph in which there may be multiple edges between a pair of vertices) where vertices represent network nodes instead of contacts. A version of Dijkstra’s algorithm in these multigraph models reduces the time needed to perform the same routing computations done in the existing CGR algorithm. Moreover, a modified version of Yen’s algorithm for multigraphs is included. Our variation of CGR, which we call Contact Multigraph Routing (CMR), provides an in-line replacement for the previously used pathfinding algorithms. This paper describes an implementation created based on the CMR approach, and experimental comparisons to traditional CGR are given. In addition, we explore some additional modifications to the routing pipeline traditionally assumed in CGR. These modifications range from the theoretical to the practical in terms of size and scope. We step forward our understanding of sheaftheoretic networking and describe how to model the routing pipeline using sheaves. We detail some enhanced route selection criteria that addresses some of the added complexity of DTNbased systems. We also include a future works section on future improvements and implementations that would be of service to the broader DTN community.

contact graph routing↗
NASA NTRSDate not supplied

Multigraph-based Routing in Delay Tolerant Networks: An Alternative to Contact Graph Routing

Satellites are leaving the realms of niche use, extending our day-to-day networked infrastructure to space – thereby forcing a generalization of network architectures. The Delay Tolerant Networking (DTN) protocol is being developed to give rise to this new Solar System Internet. Predominantly, DTNs in space use globally-distributed contact tables to compute routes. In this paper, we propose and analyze a novel optimized approach for route computations that improves upon traditional approaches. As the general DTN will always include some scheduled links, our new algorithm enables greater scalability and practicality of DTN routing. These contact tables include windows when two nodes can communicate and were classically organized into a contact graph, where the vertices represent contact opportunities. Because the complexity of a contact graph grows with the number of contacts, pathfinding on it does not scale. A new structure using multigraphs with the same data is proposed. We show that a multigraph-based approach, which we call contact multigraph routing, exhibits performance superior to routing based on contact graphs, allowing greater scaling to schedule-based routing. In this paper, the multigraph-based algorithm is detailed and a proof is included showing it outperforms the previous algorithm given the same input. Pseudocode is included, as are simulation results. We conclude with suggested future work.

Delay Tolerant Networking↗
DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2018

High‐Efficiency Thin‐Film Superlattice Thermoelectric Cooler Modules Enabled by Low Resistivity Contacts

Abstract V‐telluride superlattice thin films have shown promising performance for on‐chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contact is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V‐telluride materials. This study presents a combination of experimental and theoretical efforts to understand, design, and harness low resistivity contacts to V‐tellurides. Ab initio calculations are used to explore the effects of interfacial structure and chemical compositions on the electrical contacts, and an ab initio based macroscopic model is employed to predict the fundamental limit of contact resistivity as a function of both carrier concentration and temperature. Under the guidance of theoretical studies, an experimental approach is developed to fabricate low resistivity metal contacts to V‐telluride thin film superlattices, achieving a 100‐fold reduction compared to previous work. Interfacial characterization and analysis using both scanning transmission electron microscopy and energy‐dispersive X‐ray spectroscopy show unusual interfacial morphology and the potential for further improvement in contact resistivity. Finally, the improved contacts are harnessed to realize an improved high‐performance thermoelectric cooling module.

He, Yuping↗
DOE OSTI2024

Structure preserving and energy dissipative contact approaches for implicit dynamics

In this work, several structure preserving and energy dissipative contact approaches are proposed and evaluated. The time integration schemes considered are general with regard to the version of constraint type, but here the emphasis was on mortar contact. The proposed mortar contact approach conserves both linear and angular momentum for mortar contact in a novel way. The proposed time integration scheme can conserve energy or provide strict contact dissipation. In addition, the proposed scheme enforces both gap constraints and gap velocity constraints (i.e., persistency). Using a midstep time integrator often causes energy dissipation during initial impact, here this energy can be recovered in a novel way. Enforcing the gap velocity constraint mitigates the contact chatter of the contact pressure and nodes in many problems. Whereas some approaches enforce the persistency condition and gap constraints simultaneously during the solution of the equations of motion (EOM) requiring multipliers for both constraints included in the equation set, here the gap constraint is solved through the equations of motion and the persistency condition is satisfied in the time integration scheme by the velocity update after the equations of motion. It is shown that this approach is strictly dissipative in that a plastic contact condition can be achieved. Analogous to a coefficient of restitution for rigid bodies, any dissipated energy can then be returned upon release if energy conservation is desired. Structure preserving methods are good for long-time dynamics simulations and energy conserving and strictly dissipative methods can overcome stability issues associated with standard time integration algorithms such as the Newmark method.

42 ENGINEERING↗
DOE OSTI2018

Integrated proximity, contact and force sensing using elastomer-embedded commodity proximity sensors

Here, we describe a combined proximity, contact and force (PCF) sensor based on a commodity infrared distance sensor embedded in a transparent elastomer with applications in robotic manipulation. Prior to contact, the sensor works as a distance sensor, whereas after contact the elastomer magnifies the near field of the proximity sensors letting the sensor interpret the indentation on elastomer as force. Contact occurs at the transition of proximity and force. We describe in detail the sensor design, its principle of operation and experimentally characterize the design parameters including polymer thickness, its mixing ratio, and emitter current of the infrared sensor. We also show that the sensor response has an inflection point at contact that is independent of an object’s surface properties, making it a robust detector for contact events. We finally demonstrate a series of use cases for the proposed PCF sensor, including (1) improving pre-grasp alignment, (2) determining contact event with objects, (3) obtaining simple 3D point cloud models of objects using both proximity and contact, and (4) registering self-generated point clouds to those from a RGB-D camera using a Baxter robot and Kinova Jaco arm.

42 ENGINEERING↗
DOE OSTI2025

Crystalline Organic Compounds as Effective Nuclei in Contact Efflorescence of Ammonium Sulfate

Contact nucleation is believed to play a role in liquid-to-solid phase transitions in the atmosphere including ice nucleation and salt efflorescence. Here, for this work, contact efflorescence of optically levitated ammonium sulfate droplets by collisions with organic particles is probed using a long working-distance optical trap. Two highly viscous water-soluble organic compounds (d-(+)-raffinose and citric acid), and two insoluble highly surface-active organic compounds (stearic acid and cis-pinonic acid) were probed for their ability to induce efflorescence upon contact. While three of the organics showed minimal effectiveness as contact nuclei, cis-pinonic acid showed a remarkable ability to initiate contact efflorescence of ammonium sulfate, occurring near ammonium sulfate’s deliquescence relative humidity. Further analysis of cis-pinonic acid using bright-field microscopy in an electrodynamic balance provided evidence that the cis-pinonic acid particles are crystalline under the laboratory conditions. We suggest that the close lattice match between crystalline ammonium sulfate and crystalline cis-pinonic acid may account for the observed effectiveness in initiating contact efflorescence of ammonium sulfate. In contrast, tests of contact nucleation between cis-pinonic acid and sodium chloride, a pair with a poor lattice match, did not result in efflorescence. These findings suggest that crystalline organic compounds in the atmosphere could act as effective nuclei for contact efflorescence of atmospherically relevant salts, provided they share a compatible lattice structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Passivating contacts for crystalline silicon solar cells

The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based technologies with heavily doped, directly metallized contacts. Recombination of photo-generated electrons and holes at the contact regions is increasingly constraining the power conversion efficiencies of these devices as other performance-limiting energy losses are overcome. To move forward, c-Si PV technologies must implement alternative contacting approaches. Passivating contacts, which incorporate thin films within the contact structure that simultaneously supress recombination and promote charge-carrier selectivity, are a promising next step for the mainstream c-Si PV industry. Here, we review the fundamental physical processes governing contact formation in c-Si. In doing so we identify the role passivating contacts play in increasing c-Si solar cell efficiencies beyond the limitations imposed by heavy doping and direct metallization. Strategies towards the implementation of passivating contacts in industrial environments are discussed.

14 SOLAR ENERGY↗
DOE OSTI2014

Measuring contact angle and meniscus shape with a reflected laser beam

Side-view imaging of the contact angle between an extended planar solid surface and a liquid is problematic. Even when aligning the view perfectly parallel to the contact line, focusing one point of the contact line is not possible. We describe a new measurement technique for determining contact angles with the reflection of a widened laser sheet on a moving contact line. We verified this new technique measuring the contact angle on a cylinder, rotating partially immersed in a liquid. A laser sheet is inclined under an angle φ to the unperturbed liquid surface and is reflected off the meniscus. Collected on a screen, the reflection image contains information to determine the contact angle. When dividing the laser sheet into an array of laser rays by placing a mesh into the beam path, the shape of the meniscus can be reconstructed from the reflection image. We verified the method by measuring the receding contact angle versus speed for aqueous cetyltrimethyl ammonium bromide solutions on a smooth hydrophobized as well as on a rough polystyrene surface.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

High-performance MoS{sub 2} transistors with low-resistance molybdenum contacts

In this Letter, molybdenum (Mo) is introduced and evaluated as an alternative contact metal to atomically-thin molybdenum disulphide (MoS{sub 2}), and high-performance field-effect transistors are experimentally demonstrated. In order to understand the physical nature of the interface and highlight the role of the various factors contributing to the Mo-MoS{sub 2} contacts, density functional theory (DFT) simulations are employed, which reveal that Mo can form high quality contact interface with monolayer MoS{sub 2} with zero tunnel barrier and zero Schottky barrier under source/drain contact, as well as an ultra-low Schottky barrier (0.1 eV) at source/drain-channel junction due to strong Fermi level pinning. In agreement with the DFT simulations, high mobility, high ON-current, and low contact resistance are experimentally demonstrated on both monolayer and multilayer MoS{sub 2} transistors using Mo contacts. The results obtained not only reveal the advantages of using Mo as a contact metal for MoS{sub 2} but also highlight the fact that the properties of contacts with 2-dimensional materials cannot be intuitively predicted by solely considering work function values and Schottky theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recombination by means of enhanced metal-insulator-semiconductor (MIS) structures. Lightly diffused n{sup +} and p{sup +} surfaces are passivated with SiO{sub 2}/a-Si:H and Al{sub 2}O{sub 3}/a-Si:H stacks, respectively, before the MIS contacts are formed by a thermally activated alloying process between the a-Si:H layer and an overlying aluminum film. Transmission/scanning transmission electron microscopy (TEM/STEM) and energy dispersive x-ray spectroscopy are used to ascertain the nature of the alloy. Idealized solar cell simulations reveal that MIS(n{sup +}) contacts, with SiO{sub 2} thicknesses of ∼1.55 nm, achieve the best carrier-selectivity producing a contact resistivity ρ{sub c} of ∼3 mΩ cm{sup 2} and a recombination current density J{sub 0c} of ∼40 fA/cm{sup 2}. These characteristics are shown to be stable at temperatures up to 350 °C. The MIS(p{sup +}) contacts fail to achieve equivalent results both in terms of thermal stability and contact characteristics but may still offer advantages over directly metallized contacts in terms of manufacturing simplicity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Molybdenum oxide MoO{sub x}: A versatile hole contact for silicon solar cells

This letter examines the application of transparent MoO{sub x} (x < 3) films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells. The carrier-selectivity of MoO{sub x} based contacts on both n- and p-type surfaces is evaluated via simultaneous consideration of the contact recombination parameter J{sub 0c} and the contact resistivity ρ{sub c}. Contacts made to p-type wafers and p{sup +} diffused regions achieve optimum ρ{sub c} values of 1 and 0.2 mΩ·cm{sup 2}, respectively, and both result in a J{sub 0c} of ∼200 fA/cm{sup 2}. These values suggest that significant gains can be made over conventional hole contacts to p-type material. Similar MoO{sub x} contacts made to n-type silicon result in higher J{sub 0c} and ρ{sub c} with optimum values of ∼300 fA/cm{sup 2} and 30 mΩ·cm{sup 2} but still offer significant advantages over conventional approaches in terms of contact passivation, optical properties, and device fabrication.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗