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At least 271 records · Page 15

Polycrystalline current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co{sub 2}Mn(Ga{sub 0.25}Ge{sub 0.75}) Heusler alloy

We have studied the structure and magnetoresistive properties of polycrystalline current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves (PSVs) with Co{sub 2}Mn(Ga{sub 0.25}Ge{sub 0.75}) (CMGG) ferromagnetic layers and a Ag spacer. With (110) textured CMGG thin films and (111) textured Ag spacer, the PSVs annealed at 350 °C with 2 nm CoFe buffer layers showed ΔRA of 3.7 mΩ μm{sup 2} and MR ratio of 12.2%, while the PSVs without the buffer layer showed ΔRA of only 1.3 mΩ μm{sup 2}. High angle angular dark field images showed that the drop of ΔRA by annealing was due to the deterioration of the multi-layer CMGG/Ag/CMGG structure. Energy-dispersive X-ray spectroscopy images further confirmed the interdiffusion between CMGG layer and the Ag layer outside the CMGG/Ag/CMGG trilayer. In addition, we discuss the difference in the magnetoresistive properties of polycrystalline and epitaxial PSVs.

36 MATERIALS SCIENCE↗

Intermixing at the In x S y /Cu 2 ZnSn(S,Se) 4 Heterojunction and Its Impact on the Chemical and Electronic Interface Structure

We report on the chemical and electronic structure of the interface between a thermally co-evaporated In x S y buffer and a Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber for thin-film solar cells. To date, such cells have achieved energy conversion efficiencies up to 8.6%. Using surface-sensitive X-ray and UV photoelectron spectroscopy, combined with inverse photoemission and bulk-sensitive soft X-ray emission spectroscopy, we find a complex character of the buffer layer. It includes oxygen, as well as selenium and copper that diffused from the absorber into the In x S y buffer, exhibits an electronic band gap of 2.50 ± 0.18 eV at the surface, and leads to a small cliff in the conduction band alignment at the In x S y /CZTSSe interface. After an efficiency-increasing annealing step at 180 °C in nitrogen atmosphere, additional selenium diffusion leads to a reduced band gap at the buffer layer surface (2.28 ± 0.18 eV).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high quality Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

2D Oxides Realized via Confinement Heteroepitaxy

Novel confinement techniques facilitate the formation of non-layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaO x , InO x , SnO x ) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaO x with non-periodic oxygen in a crystalline Ga matrix via air oxidation at room temperature. However, crystalline monolayer GaO 2 and bilayer Ga 2 O 3 with ferroelectric wurtzite structure(FE-WZ') can then be formed via subsequent high-temperature O 2 annealing. Furthermore, the graphene/X/SiC (X = 2D Ga or Ga 2 O 3 ) junction is tunable from Ohmic to a Schottky or tunnel barrier depending on the interface species. Finally, using vertical transport measurements and electron energy loss spectroscopy analysis, the bandgap of 2D gallium oxide is identified as 6.6 ± 0.6 eV, significantly larger than that of bulk β-Ga 2 O 3 (≈4.8 eV), suggesting strong quantum confinement effects at the 2D limit. Furthermore, the study presented here is foundational for development of atomic-scale, vertical 2D/3D heterostructure for applications requiring short transit times, such as GHz and THz devices.

2D gallium oxides↗

Crosscutting Recombination Metrology for Expediting VOC Engineering

Work carried out under this grant addressed the need for improved materials and device characterization of solar cell designs. This experimental program aimed to develop joint electrical and optical studies of solar cells based on the group-II-VI semiconductor CdTe and the chalcogenide semiconductor Cu(InGa)Se 2 . Electrical measurements focused on temperature (T) and illumination intensity (I) dependence of the open-circuit voltage (VOC), a quantity that plays an important role in conversion efficiency. The VOC depends on temperature and illumination intensity through the energy gap and positions of the quasiFermi levels (QFLs). Optical measurements exploited the illumination and temperature dependence of absolute photoluminescence (PL) intensity (PL-I), a quantity that also depends on the QFL positions. The QFL splitting is a quantity that also depends on recombination rates within the solar cell, including radiative and non-radiative processes. Other factors affect the electrical and optical properties. These include band offsets at both the front and back interfaces of the device active region where electrical contacts are formed. Understanding, locating, and quantifying the recombination properties of the solar cells was the principal goal of this research. Custom simulations were developed to solve continuity and Poisson equations selfconsistently to obtain free-electron and free-hole concentrations. The measurements of temperature and intensity dependent VOC and PL-I allowed the extraction of a number of physical parameters including the conduction band offset, the shunt constant, and the effective capture coefficient for recombination centers, both within the absorber and at the absorber-buffer interface. In addition, the back-contact barrier height is determined from electrical properties. Each of these is discussed in the report. The illumination intensity dependence of VOC and PL-I do not overlap in experiments primarily because PL is not observed in the low-intensity regime where VOC is studied. Absolute PL-I measurements enabled development of an approach directly comparing it with VOC. This in turn allowed development of a simulation capability that would consistently use both measurements, as functions of T and I, for producing a minimization scheme using a differential evolution algorithm. The approach was applied to both CdTe and Cu(InGa)Se 2 solar cells each prepared under various conditions. Shunt conductivity, QFL splitting, recombination were measured. Also extensively studied are current-voltage and frequency-dependent capacitance voltage. Work completed under this grant included studies of magnesium zinc oxide (MZO) buffered CdTe solar cells including the effects of hydroiodic acid (HI) treatment. From these studies the recombination rates were quantified at the buffer/absorber (front) interface. The effect of back-contact barrier height was investigated. CdTe solar cells were prepared with CdSe and CdS buffer layers. Lower grain-boundary potential fluctuation, higher back-contact barrier height, and greater bulk recombination were observed in early devices with CdSe buffer layer. Investigations were also carried out into CdS/Cu(InGa)Se 2 solar cells. A metal-insulatorsemiconductor capacitance-voltage technique was developed to extract recombinationrelevant properties of the absorber interface. From this work the density of interface states D it , their capture cross-section σ, fixed charge at the interface Q f , and surface recombination velocity were all extracted.

14 SOLAR ENERGY↗

Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy

Chemical beam epitaxy has been used to grow layers of GaP1 − xNx, GaP1 − yAsy, and nearly lattice-matched layers GaP1 − x − yAsyNx on Si substrates. To address the issue of antiphase domain generation associated with the growth of polar semiconductors on Si, misoriented Si(001) substrates have been used combined with a carefully designed GaP buffer layer growth. The reflection high-energy electron diffraction pattern exhibits a (2 × 4) surface reconstruction after GaP buffer layer and GaP(As,N) graded layer growth, indicating the good surface quality and planarity of the grown layers. Sample composition was obtained by simultaneous acquisition of Rutherford backscattering spectrometry and nuclear reaction analysis, indicating a linear dependence of N and As mole fractions on the flux of their respective precursor. GaP1 − x − yAsyNx layers grown on Si substrates have a lattice mismatch not larger than ±0.005 for N contents in the range 0.02 < x < 0.05. High-resolution X-ray diffraction reciprocal space maps demonstrate a good crystalline quality. Intense photoluminescence spectra have been measured in all GaP1 − xNx and GaP1 − x − yAsyNx layers, as it is expected for direct bandgap materials. Two wide overlapped emission peaks are observed in all the spectra, most likely related to near bandgap recombination. The position of the higher energy peak for GaP1 − xNx and GaP1 − x − yAsyNx layers has been compared to bandgap energy calculations using the band anticrossing model, showing good agreement.

Ben Saddik, K.↗

Band offset at the heterojunction interfaces of CdS/ZnSnP{sub 2}, ZnS/ZnSnP{sub 2}, and In{sub 2}S{sub 3}/ZnSnP{sub 2}

Heterojunctions were formed between ZnSnP{sub 2} and buffer materials, CdS, ZnS, and In{sub 2}S{sub 3}, using chemical bath deposition. The band offset was investigated by X-ray photoelectron spectroscopy based on Kraut method. The conduction band offset, ΔE{sub C}, between ZnSnP{sub 2} and CdS was estimated to be −1.2 eV, which significantly limits the open circuit voltage, V{sub OC}. Conversely, ΔE{sub C} at the heterojunction between ZnSnP{sub 2} and ZnS was +0.3 eV, which is within the optimal offset range. In the case of In{sub 2}S{sub 3}, ΔE{sub C} was a relatively small value, −0.2 eV, and In{sub 2}S{sub 3} is potentially useful as a buffer layer in ZnSnP{sub 2} solar cells. The J−V characteristics of heterojunction diodes with an Al/sulfides/ZnSnP{sub 2} bulk/Mo structure also suggested that ZnS and In{sub 2}S{sub 3} are promising candidates for buffer layers in ZnSnP{sub 2} thin film solar cells, and the band alignment is a key factor for the higher efficiency of solar cells with heterojunctions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Composition and Interface Analysis of InGaN/GaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography

In0.20Ga0.80N/GaN multi-quantum wells grown on [0001]-oriented GaN substrates with and without an InGaN buffer layer were characterized using three-dimensional atom probe tomography. In all samples, the upper interfaces of the QWs were slightly more diffuse than the lower interfaces. The buffer layers did not affect the roughness of the interfaces within the quantum well structure, a result attributed to planarization of the surface of the 1st GaN barrier layer which had an average root-mean-square roughness of 0.177 nm. The In and Ga distributions within the MQWs followed the expected distributions for a random alloy with no indications of In clustering.

Environmental Molecular Sciences Laboratory↗

Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

36 MATERIALS SCIENCE↗

Planar regions of GaAs (001) prepared by Ga droplet motion

The authors describe a simple method for obtaining planar regions of GaAs (001) suitable for surface science studies. The technique, which requires no buffer layer growth, atomic hydrogen source, or the introduction of As flux, employs controllable Ga droplet motion to create planar trail regions during Langmuir evaporation. Low-energy electron microscopy/diffraction techniques are applied to monitor the droplet motion and characterize the morphology and the surface reconstruction. It is found that the planar regions exhibit atomic flatness at the level of a high-quality buffer layer.

42 ENGINEERING↗

Development of lithium ion conducting interface between lithium metal and a lithium ion conducting ceramic using block polymers

The lithium-air (Li-air) technology developed by EDF uses an air electrode which works with an aqueous electrolyte, which prevent the use of unprotected lithium metal electrode. A Li+ ionic conductor glass ceramic is used to separate the aqueous electrolyte compartment from the negative lithium electrode. However, this glass-ceramic is not stable in contact with lithium, it is thus necessary to add a protective buffer layer. In another hand, this protection should ideally resist to lithium dendritic growth. It is in this context that this research project which has as goal the development of a protective buffer layer based on block copolymer electrolytes (BCE) between the lithium metal and the lithium ionic conductor ceramic, for lithium-air battery. In a first part, the BCE is studied in lithium-lithium symmetric cells, in order to determine their electrochemical properties such as ionic conductivity, steady state transference number, and finally their resistance to dendritic growth during cycling. Several characterization techniques were employed and especially hard X-ray micro-tomography to analyze the lithium morphology before and after cycling. For single-ion BCE, we expect to suppress dendritic growth, however, we report here for the first time, the visualization of a homogeneous growth of lithium but the formation of dense lithium objects. In another part, the composite BCE-ceramic is studied by electrochemical impedance spectroscopy (EIS). The cycling of lithium-composite-lithium symmetric cells and the analysis of the EIS measurement after each cycle permit to determine if the dendrites have cross the protective layer and are in contact with the ceramic. Besides, the quantification of the polarization loss at the interface polymer-ceramic is evaluated by polarization experiments. This contribution is found to be small.

36 MATERIALS SCIENCE↗

Microstructure and Fission Product Distribution Examination in the UCO kernel of TRISO Fuel Particles

The effect of irradiation and fabrication process on the UCO fuel kernel, kernel-buffer interlayer and fission products, has not been fully studied for UCO fuel kernels of TRISO coated particles. Specifically, the potential correlation(s) with fission product retention, composition and distribution within these structures for the tristructural isotropic (TRISO) fuel performance at normal and accident conditions, are not well reported in literature. Structural and chemical information in the irradiated UCO fuel kernel, e.g., the stoichiometry variations, may further contribute to fuel performance modeling under the Nuclear Energy Advanced Modeling and Simulation (NEAMS) program. The microstructural and micro-chemical evolution of selected irradiated UCO fuel kernels, kernel buffer interfaces and recoil zones were characterized using Scanning Transmission Electron Microscopy (STEM) and Energy Dispersive Spectroscopy (EDS) elemental mapping. The fuel kernel of particles from Advanced Gas Reactor (AGR)-2 irradiated to 10.8% fissions per initial metal atom (FIMA), were examined with the following main findings: (1) large fission gas bubbles were mainly identified in the zirconium and molybdenum enriched but oxygen depleted phases in the center of fuel kernel, (2) significant inter-diffusion between the UCO fuel kernel and pyro-carbon buffer layer was observed as a high density of sub-micron sized carbon inclusions was identified at near the interface in the kernel side and some isolated UCO particles were located in the buffer layer, (3) pores filled with free carbon were also observed in the recoil zone specimen. Fuel kernels from two AGR-1 compacts irradiated to 11.4 and 17.4% FIMA respectively, were examined with the following main findings: (1) two primary phases consisting of a “high-Z (atomic mass)” UC(O) phase (rocksalt; a=0.496 nm) that also contained Zr, Mo, and/or Ru and a “low-Z” UO2(C) phase (fluorite structure; a = 0.547nm) in which trace amounts of I, Nd, Pr, and/or Er could be detected. This latter phase contained many precipitates of the “high-Z” phase. Conversely, this latter phase did not contain precipitates of the UO2-type material, (2) Xe bubbles were found almost exclusively in the “high-Z” phase and in the particular example shown, the Zr-containing variant. Further work in this area should address whether this potential Xe preference for just one of the high-Z phases is indeed a real effect.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Carrier mobilities of (001) cadmium arsenide films

We investigate (001)-oriented films of the topological semimetal cadmium arsenide (Cd 3 As 2 ) grown by molecular beam epitaxy on lattice-matched III–V Al x In 1-x Sb buffer layers. Magnetotransport studies and analysis of thin film microstructures are used to determine the influence of dislocations on their carrier mobilities. We show that only a minority of the threading dislocations present in the buffer layers extend into the Cd 3 As 2 films. Threading dislocations are shown to reduce the mobilities of carriers residing in the topological surface states, while bulk transport was unaffected by a change in the dislocation density across an order of magnitude. Thick (001) Cd 3 As 2 films exhibit electron mobilities of up to 41 000 cm 2 V -1 s -1 at 2 K. The results provide insights into the influence of extended defects on the transport properties of a prototype topological semimetal.

36 MATERIALS SCIENCE↗

High Efficiency, Inexpensive Thin Film III-V Photovoltaics using Single-Crystalline-Like, Flexible Substrates

An innovative, non-mainstream approach has been developed to fabricate inexpensive GaAs solar cells directly on epi-ready flexible metal substrates. Using templates made by ion beam assisted deposition (IBAD) and epitaxial germanium films made by Plasma Enhanced Chemical Vapor Deposition (PECVD), epitaxial GaAs films with high opto-electronic and structural quality have been grown on metal substrates using metal organic chemical vapor deposition (MOCVD). Crystallographic out-of-plane and in-plane texture spread less than 1 degree full-width-at-half-maximum (FWHM) was achieved in undoped, n-type and p-type GaAs films as well as in AlGaAs films on metal substrates. Electron mobility of >1300 cm 2 /V-s was attained in GaAs:Si n-type films. Also, hole mobility of >100 cm 2 /V-s was measured in GaAs:Zn films. Consistent doping was obtained in GaAs:Si (10 15 -10 18 cm -3 ), and GaAs:Zn films (10 17 -10 19 cm -3 ), necessary for the active device layers of a GaAs solar cell. Defect reduction techniques (thermal cycling, superlattice structures) were implemented to reduce defect density in GaAs films from 1 × 10 9 cm -2 to 9 × 10 7 cm -2 . Lifetime of 2.3 ns was obtained in AlGaAs/GaAs double-heterostructure device. Solar cells were fabricated based on designs using 1-dimensional and 2-dimensional simulations tailored to the specific properties of the GaAs films on metal substrates. All device fabrication processes (lithography, anti-reflection coating (ARC), device isolation and mesa formation and ohmic metal electrode formation) suitable for III-V solar cell fabrication on metal substrates were fully developed. A bi-layered ARC using ZnS and MgF 2 was used to minimize the reflection over wide range of spectrum. When this ARC was applied after removal of the parasitic absorption layer, the conversion efficiencies were improved up to 11.1% with V oc = ~0.621 V, J sc = ~24.5 mA/cm 2 , and FF = ~0.735. Yet another accomplishment in this project was the development of all electrically-conducting architecture for GaAs solar cells on metal substrates. Biaxial-texture was successfully achieved in all electrically-conducting buffer layer on metal substrate in structure based on IBAD TiN instead of IBAD MgO. The all electrically-conducting Ge/NiSi 2 /TiN/IBAD-TiN/Hastelloy substrate was used to fabricate back contacts for vertically conducting solar cell structures on metal substrates. A metallic resistivity as low as 4.17 μΩ•cm was obtained. A significant improvement of the texture of the Ge template was achieved using a Ag buffer layer between the TiN films. Epitaxial GaAs was successfully grown on the all-electrically-conducting buffer architecture. A Liquid Phase Epitaxy (LPE) method to drastically increase grain size of epitaxial Ge while maintaining the single-crystalline-like texture. Grain size up to 35 µm was achieved in LPE Ge grown on sputtered Ge with a grain size of ~ 1 µm on IBAD template on metal substrate. Epitaxial GaAs was grown on LPE Ge, with an out-of-plane texture of 0.34° compared to 0.98° in GaAs grown on sputter deposited Ge. A model was developed to simulate the effect of grain boundaries as a function of grain size of GaAs films on metal substrates. This model showed that even the very low angle grain boundaries (<1º misorientation) of our GaAs films led to decrease in Voc. Hydrogen plasma passivation treatment is being developed to improve open circuit voltage and the conversion efficiency of GaAs solar cells on flexible substrate.

14 SOLAR ENERGY↗

Wide Band Gap Chalcopyrite Photoelectrodes for Direct Water Splitting (Final Technical Report)

The chalcopyrite material class, typically identified by its most popular alloy CuInGaSe 2 , provides exceptionally good candidates for photoelectrochemical (PEC) water splitting and has the potential to meet DoE EERE’s targets in terms of hydrogen production costs (less than $2/gge). Some key advantages of this class include remarkable photon-to-electron conversion efficiency and a high Faradaic efficiency for the hydrogen evolution reaction, two characteristics essential for efficient PEC water splitting. However, the band gaps of commonly used chalcopyrites in the photovoltaic field (1.0-1.6 eV) are too narrow to be compatible with the multi-junction approach for efficient PEC hydrogen production, in which a stack of solar absorbers generates the bias required for water splitting. Nonetheless, previous studies performed by our team demonstrated that chalcopyrites’ narrow band gaps could be effectively widened using simple conversion steps, leading to functional chalcopyrite-based PEC electrodes with optical band gap in the 1.8-2.4 eV range, making this class highly suitable for renewable hydrogen production via water splitting. This multi-disciplinary research program lead by the University of Hawai’i/Hawai’i Natural Energy Institute combined unique analytical techniques (UNLV), state-of-the-art theoretical modeling (LLNL) with advanced thin film materials synthesis (HNEI, NREL and Stanford) to provide deeper understanding of wide band gap chalcopyrite-based PEC materials and engineer high performance/corrosion-resistant photocathodes with tunable energetics and compatible with the multi-junction approach. The goals of this project were to demonstrate photoelectrochemical (PEC) solar-hydrogen production using a dual absorber system with a solar-to-hydrogen conversion efficiency of at least 15% with an operational life up to 2,000 hours and capable of generating at least 3 liters of hydrogen in 8 hours. After a brief introduction (Section 1) and description of our work plan (Section 2), we present in Section 3 our results on the development of new wide bandgap copper chalcopyrites absorbers for PEC waters splitting. We first show through modeling how alloying can be used to tailor the optical properties and/or surface energetics of various material candidates. We also present how specific defects (e.g., GaCu) can lead to recombination centers within the forbidden gap of copper-poor chalcopyrites. Then, we present our efforts to synthesize high efficiency wide band gap CuGa 3 Se 5 , CuGa(S,Se) 2 and Cu(In,Ga)S 2 photocathodes capable of generating photocurrent density over 10 mA/cm 2 . We also demonstrate that Cu-rich absorbers should be avoided as they lead to poor sub-band gap optical transmission. In Section 4, we first report on our efforts to tune the energetics of chalcopyrites toward the hydrogen evolution reaction. First, we quantified the energetics of wide band gap chalcopyrites interfaced with conventional CdS buffer layer, as measured with X-ray photoelectron spectroscopy techniques, and evidence the presence of a large (and undesirable) conduction band offset at this interface. Then, we highlight some of the work performed with alternative buffer layers, including In 2 S 3 . Durability improvements with various ultra-thin protective layers are presented in Section 5. Our data show that TiO 2 combined with MoS 2 can significantly improve chalcopyrites lifetime up to 350 hours under continuous operation at 8 mA/cm 2 . Finally, in Section 6 we report strategies to integrate chalcopyrite photocathodes into standalone tandem PEC devices. Although promising methods were proposed for both mechanical and monolithic stacking with narrow band gap PV drivers, no functional device was fabricated on time to fulfill the program end goals.

08 HYDROGEN↗

Probing and controlling oxygen impurity diffusion in h -BN semi-bulk crystals

Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies.

Physics↗

Electron Radiation Damage of (alga) As-gaas Solar Cells

Solar cells (2 cm by 2 cm (AlGa) As-GaAs cells) were fabricated and then subjected to irradiation at normal incidence by electrons. The influence of junction depth and n-type buffer layer doping level on the cell's resistance to radiation damage was investigated. The study shows that (1) a 0.3 micrometer deep junction results in lower damage to the cells than does a 0.5 micrometer junction, and (2) lowering the n buffer layer doping density does not improve the radiation resistance of the cell. Rather, lowering the doping density decreases the solar cell's open circuit voltage. Some preliminary thermal annealing experiments in vacuum were performed on the (AlGa)As-GaAs solar cells damaged by 1-MeV electron irradiation. The results show that cell performance can be expected to partially recover at 200 C with more rapid and complete recovery occurring at higher temperature. For a 0.5hr anneal at 400 C, 90% of the initial power is recovered. The characteristics of the (AlGa)As-GaAs cells both before and after irradiation are described.

Loo, R.↗