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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Work function lowering of LaB 6 by monolayer hexagonal boron nitride coating for improved photo- and thermionic-cathodes

We report a lowering of work function for lanthanum hexaboride (LaB 6 ) by monolayer hexagonal boron nitride (hBN) coating. Photoemission electron microcopy (PEEM) and thermionic emission electron microscopy (TEEM) both revealed that the hBN coated region of a LaB 6 (100) single crystal has a lower work function compared to the bare (i.e., non-coated) and graphene coated regions. A broad and uniform brighter image of the hBN coated region in PEEM was quantitatively supported by a 0.4 eV decrease in the work function in photoelectron spectra compared to the bare region. TEEM results were consistent in that the hBN coated region exhibited thermionic emission at 905 °C, whereas the bare and graphene coated regions did not. A larger decrease in the work function for hBN coated LaB 6 (100) compared to graphene coated LaB 6 (100) was qualitatively supported by our density functional theory calculations. Adding an oxide layer in the calculations improved consistency between the calculation and experimental results. We followed up our calculations with synchrotron-radiation x-ray photoelectron spectroscopy and confirmed the presence of an oxide layer on our LaB 6 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Designing a boron nitride polyethylene composite for shielding neutrons

Neutrons are encountered in many different fields, including condensed matter physics, space exploration, nuclear power, and healthcare. Neutrons interacting with a biological target produce secondary charged particles that are damaging to human health. The most effective way to shield neutrons is to slow them to thermal energies and then capture the thermalized neutrons. These factors lead us to consider potential materials solutions for neutron shields that maximize the protection of humans while minimizing the shield mass and adapt well to modern additive manufacturing techniques. Using hexagonal boron nitride (hBN) as a capture medium and high-density polyethylene (HDPE) as a thermalization medium, we aim to design the optimal internal structure of h 10 BN/HDPE composites by minimizing the effective dose, which is a measure of the estimated radiation damage exposure for a human. Through Monte Carlo simulations in Geant4, we find that the optimal structure reduces the effective dose up to a factor of 72 over aluminum (Al) and up to a factor of 4 over HDPE; this is a significant improvement in shielding effectiveness that could dramatically reduce the radiation exposure of occupational workers.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30° ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0°, not 30°, relative twist angle. We confirm this alignment by torsional force microscopy of the graphene/hBN moiré on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, nonaligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moiré heterostructures.

boron nitride↗
DOE OSTI2023

Ultrathick Boron Carbide Coatings for Nuclear Fusion Targets

Boron carbide is an attractive ablator for next-generation inertial confinement fusion (ICF) targets. Here we describe several aspects of our ongoing systematic studies of the deposition and processing of B 4 C coatings for ICF targets. We show that residual compressive stress in films can be reduced and the deposition rate increased by N-doping. Further, we also demonstrate successful Si substrate etching and surface polishing and discuss remaining challenges and offer potential solutions to the buildup of particulates in the deposition chamber during prolonged coating runs, control of nodular growth defects, and lateral nonuniformity of film properties for deposition conditions with relatively low target-to-substrate distances.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High-Rate Sputter Deposition of Ultrathick Boron Carbide Coatings on Rolling Spherical Substrates

Amorphous boron carbide (B 4 C) is a promising next-generation ablator material for inertial confinement fusion. However, the deposition of ultrathick B4C coatings with submicron-scale density uniformity on spherical substrates, as required for ablator shell fabrication, remains challenging. Here, in this study, we use direct current magnetron sputtering to deposit B 4 C onto 2-mm-diameter Si spheres rolling in a dish-shaped substrate holder. High deposition rates of ∼3 μm/h are achieved. Ultrathick films have a columnar microstructure, with the column width determined by the density of nodular defects. Nodular defect nucleation is dominated by the pickup of particulates from the holder during substrate rolling. We demonstrate the fabrication of a hollow B 4 C spherical shell with a wall thickness of 80 μm. Also demonstrated is the laser machining of holes in the B 4 C coating, which is necessary for both the chemical removal of the Si template and the attachment of a fusion fuel fill tube.

Inertial confinement fusion targets↗
DOE OSTI2024

Comparative study of boron and neon injections on divertor heat fluxes using SOLPS-ITER simulations

Here, based on the EAST equilibrium, the effects of boron (B) and neon (Ne) injected at different locations on the target heat load, and the distributions of B and Ne particles were investigated by transport code SOLPS-ITER. It was found that the B injection was more sensitive to the injection location for heat flux control than impurity Ne. The high electron and ion densities near the inner target in the discharge with impurity B injected from over X-point (R 1 ) led to plasma detachment only at the inner target, and the localized B ions in the cases with injection from outer target location (R 2 ) and upstream location (R 3 ) led to far-SOL detachment at the outer target, but not at the inner target. In contrast, for Ne, the spatial distributions of Ne ions and electrons were found to be similar in all the cases at the three injection locations, and the detached plasma was achieved at the inner target and the electron temperature was reduced at the outer target. For locations R 2 and R 3 , impurity B showed a more pronounced effect on the heat flux at the far-SOL of the outer target. Further analysis indicated that Ne atoms came mainly from the recycling sources, whereas B atoms came mainly from injection, and that their distinct atomic distributions resulted from the difference in the ionization threshold and ionization mean free path. In addition, the radiation proportion of B in the divertor region was larger than that of Ne when the total radiation power was similar, which suggests that B has less influence on the core region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Initial results from boron powder injection experiments in WEST lower single null L-mode plasmas

Using a recently installed impurity powder dropper (IPD), boron powder (<150 μm) was injected into lower single null (LSN) L-mode discharges in WEST. IPDs possibly enable real-time wall conditioning of the plasma-facing components and may help to facilitate H-mode access in the full-tungsten environment of WEST. The discharges in this experiment featured I p = 0.5 MA, B T = 3.7 T, q 95 = 4.3, t pulse = 12–30 s, n e,0 ~ 4 × 10 19 m –2 , and P LHCD ~ 4.5 MW. Estimates of the deuterium and impurity particle fluxes, derived from a combination of visible spectroscopy measurements and their corresponding S/XB coefficients, showed decreases of ~50% in O + , N + , and C + populations during powder injection and a moderate reduction of these low-Z impurities (~50%) and W (~10%) in the discharges that followed powder injection. Along with the improved wall conditions, WEST discharges with B powder injection observed improved confinement, as the stored energy W MHD , neutron rate, and electron temperature T e increased significantly (10%–25% for W MHD and 60%–200% for the neutron rate) at constant input power. Notably, these increases in confinement scale up with the powder drop rate and are likely due to the suppression of ion temperature gradient (ITG) turbulence from changes in Z eff and/or modifications to the electron density profile.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Simultaneous ELM suppression and divertor detachment via synergistic boron powder and neon injection in EAST

A novel approach for simultaneous power exhaust and edge-localized mode (ELM) control is presented in the Experimental Advanced Superconducting Tokamak discharges, which utilize an ITER-like tungsten divertor. Real-time injection of boron (B) powder and neon (Ne) gas overcomes their limitations encountered when used separately. Pure Ne seeding leads to a narrow operational window constrained by core impurity accumulation and H-mode to L-mode back transitions, while pure solid B injection (SBI) is insufficient for effective divertor cooling. In comparison, their combined use achieves a stable, stationary, ELM-suppressed H-mode with adequate power exhaust. This synergistic scenario features partial energy detachment at the outer divertor while maintaining good plasma confinement (H 98 ∼ 1) with minimal degradation. Two key features of this scenario are: (1) the SBI triggers a persistent Edge Harmonic Mode (EHM), which provides a crucial continuous particle transport channel, preventing Ne and tungsten/molybdenum accumulation without flushing out by ELM, and (2) the B + Ne mixture allows for active optimization of the radiated power profile. Core radiation can be reduced by substituting a portion of the Ne with B, leveraging their complementary non-coronal equilibrium radiation efficiencies. This combined B + Ne injection scheme presents a promising pathway toward integrated core-edge scenarios, offering the potential to minimize total impurity throughput while leveraging an actuator (powder injection) already being considered for ITER.

Boron↗
DOE OSTI2021

Application-driven synthesis and characterization of hexagonal boron nitride deposited on metals and carbon nanotubes

Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high in-plane thermal conductivity (>400 W m -1 K -1 ), second only to diamond among electrical insulators. Many studies to date have relied on exfoliated h-BN, however, for large-scale applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we first investigate single-layer h-BN synthesized by CVD on single crystal platinum (Pt), comparing these films with h-BN deposited on more commonly used polycrystalline Pt and Cu. The h-BN film grown on single crystal Pt has the lowest surface roughness and best spatial homogeneity, and our electrochemical transfer process allows the Pt to be reused with no measurable degradation. Additionally, we also demonstrate direct capping of carbon nanotubes (CNTs) with as-grown h-BN, but we find that the direct growth partly degrades the CNT electrical conductivity. On the other hand, we show that transferred monolayer h-BN can serve as an ultrathin barrier which protects MoS2 from damage at high temperatures and discuss other applications that take advantage of the conformal h-BN deposition.

2D materials↗
DOE OSTI2023

Deuterium recycling and wall retention characteristics during boron powder injection in EAST

Boron (B), as a low-Z material, is widely employed for wall conditioning to enhance plasma performance in fusion devices. In the Experimental Advanced Superconducting Tokamak, a series of experiments involving real-time B powder injection has been conducted to investigate fuel particle behavior. It was observed that fuel particle recycling decreased with an increase in the amount of B powder injected, resulting in an increase in short-term fuel retention. The fuel recycling decreased by up to 80%, as indicated by divertor neutral pressure and D α line emission. Furthermore, each B atom exhibited a trapping capacity of 0.3 D particles during B powder injection at a typical flow rate. The real-time B injection had no wall hysteresis effect on D retention, implying that cumulative B injection and deposited film did not affect long-term D retention. The possible mechanism for D retention is the formation of B-C-O-D compounds and co-deposition between B and D particles during discharges. This investigation would be valuable for evaluating T retention when B is used as wall conditioning material in future fusion reactor devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Structural and mechanical properties of monolayer amorphous carbon and boron nitride

Amorphous materials exhibit various characteristics that are not featured by crystals and can sometimes be tuned by their degree of disorder (DOD). Here, we report results on the mechanical properties of monolayer amorphous carbon (MAC) and monolayer amorphous boron nitride (maBN) with different DOD. The pertinent structures are obtained by kinetic-Monte-Carlo (kMC) simulations using machine-learning potentials (MLP) with density-functional-theory (DFT)-level accuracy. An intuitive order parameter, namely the areal fraction F x occupied by crystallites within the continuous random network, is proposed to describe the DOD. We find that F x captures the essence of the DOD: Samples with the same F x but different sizes and arrangements of crystallites, obtained using two distinct kMC procedures, have virtually identical radial distributions functions as well as bond-length and bond-angle distributions. Furthermore, by simulating the fracture process with molecular dynamics, we found that the mechanical responses of MAC and maBN before fracture are mainly determined by F x and are insensitive to the sizes and specific arrangements and to some extent the numbers and area distributions of the crystallites. The behavior of cracks in the two materials is analyzed and found to mainly propagate in meandering paths in the CRN region and to be influenced by crystallites in distinct ways that toughen the material. Furthermore, the present results reveal the relation between structure and mechanical properties in amorphous monolayers and may provide a universal toughening strategy for 2D materials.

2-dimensional systems↗
DOE OSTI2022

Boron nitride on SiC(0001)

Here, in the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-R0° layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal B x N y layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0° orientation of the B x N y template layer upon annealing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel

The discovery of ferroelectricity in hafnium zirconium oxide (HfxZr 1−x O2) and related fluorite materials has spurred interest in ferroelectric devices suitable for integration with silicon integrated circuits (ICs), especially those that can be embedded in the back-end-of-line (BEOL) process. More recently, ferroelectricity has been found in wurtzite aluminum nitride-based materials, such as scandium and boron-doped aluminum nitride (Al 1−x ScxN and Al 1−x BxN). Although these materials currently have undesirably large coercive electric fields, and small breakdown electric field-to-coercive electric field ratio, their low processing temperatures and large remanent polarization offer intriguing possibilities for device applications. Furthermore, we report ferroelectric field-effect transistors (FeFETs) with a 15 nm thick Al0.88B0.12N layer and an 11 nm ZnO semiconductor channel, achieving a memory window >1 V and switching voltages ( V switch ) <±10 V.

42 ENGINEERING↗
DOE OSTI2022

Initial Results from Boron Powder Injection Experiments in WEST Lower Single Null L-mode Plasmas

Using a recently installed impurity powder dropper (IPD), boron powder (< 150 μm) was injected into lower single null (LSN) L-mode discharges in WEST. IPDs possibly enable real-time wall conditioning of the plasma-facing components and may help to facilitate H-mode access in the full-tungsten environment of WEST. The discharges in this experiment featured Ip = 0.5 MA, BT = 3.7 T, q95 = 4.3, tpulse = 12–30 s, ne,0 ~ 4×1019 m-2, and PLHCD ~ 4.5 MW. Estimates of the deuterium and impurity particle fluxes, derived from a combination of visible spectroscopy measurements and their corresponding S/XB coefficients, showed decreases of ~ 50% in O+, N+, and C+ populations during powder injection and a moderate reduction of these low-Z impurities (~ 50%) and W (~ 10%) in the discharges that followed powder injection. Along with the improved wall conditions, WEST discharges with B powder injection observed improved confinement, as the stored energy WMHD, neutron rate, and electron temperature Te increased significantly (10–25% for WMHD and 60–200% for the neutron rate) at constant input power. These increases in confinement scale up with the powder drop rate and are likely due to the suppression of ion temperature gradient (ITG) turbulence from changes in Zeff and/or modifications to the electron density profile.

Boronization↗
DOE OSTI2022

Boron adatom adsorption on graphene: A case study in computational chemistry methods for surface interactions

Though weak surface interactions and adsorption can play an important role in plasma processing and materials science, they are not necessarily simple to model. A boron adatom adsorbed on a graphene sheet serves as a case study for how carefully one must select the correct technique from a toolbox of computational chemistry methods. Using a variety of molecular dynamics potentials and density functional theory functionals, we evaluate the adsorption energy, investigate barriers to adsorption and migration, calculate corresponding reaction rates, and show that a surprisingly high level of theory may be necessary to verify that the system is described correctly.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy

Hexagonal BN (h-BN) has emerged as an important ultrawide bandgap (UWBG) semiconductor (Eg~6 eV). The crystal growth technologies for producing semi-bulk crystals/epilayers in large wafer sizes and understanding of defect properties lag decades behind conventional III-nitride wide bandgap (WBG) semiconductors. Here we report probing of boron vacancy (VB)-related defects in freestanding h-BN semi-bulk wafers synthesized by hydride vapor phase epitaxy (HVPE). A photocurrent excitation spectroscopy (PES) was designed to monitor the transport of photoexcited holes from deep-level acceptors. A dominant transition line at 1.66 eV with a side band near 1.62 eV has been directly observed, which matches well with the calculated energy levels of 1.65 for the VB-H deep acceptor in h-BN. The identification of VB complexes via PES measurement was further corroborated by the temperature-dependent dark resistivity and secondary ion mass spectrometry measurements. The results presented here suggested that it is necessary to focus on the optimization of V/III ratio during HVPE growth to minimize the generation of VB-related defects and to improve the overall material quality of h-BN semi-bulk crystals. The work also provided a better understanding of how VB complexes behave and affect the electronic and optical properties of h-BN.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Surface-Controlled Conversion of Ammonia Borane from Boron Nitride

“One-pot regeneration”, which is simple regneneration method of ammonia borane (AB) using hydrazine and liquid ammonia, enables conversion of AB from hexagonal boron nitride (h-BN) after milling hydrogenation. Solution 11 B-NMR revealed the presence of AB after NH 3 /N 2 H 4 treatment of milled h-BN (BNH x ) although the yield of AB was less than 5%. The conversion mechanism was clarified as B-H bonds on the h-BN surface created by ball-milling under hydrogen pressure have an ability to form AB, which was confirmed by Thermogravimetry-Residual Gas Analysis (TG-RGA) and Infrared (IR) analysis. The reaction routes are also the same as regeneration route of polyborazylene because intermediates of AB such as (B(NH 2 ) 3 and hydrazine borane were found by solution 11 B-NMR after soaking BNH x in liquid NH 3 and hydrazine, respectively. Because of the fact that all reactions proceed on the h-BN surface and no reaction proceeds when neat h-BN is treated, breaking of B 3 N 3 ring structure and then creation of B-H bond is the key issue to increase conversion yield of AB.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗