Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Bipolar”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 271 records · Page 15
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

From bipolar to quadrupolar - The collimation processes of the Cepheus A outflow

Results of new K-band observations of the (1, 1) and (2, 2) ammonia lines toward Cepheus A are reported. The lines are mapped with approximately 2 arcsec of angular resolution and 0.3 km/s of velocity resolution. A sensitivity of 10 mJy has been achieved. The observations reveal details of the spatial and kinematics structure of the ambient high-density gas. It is suggested that the interstellar high-density gas is diverting and redirecting the outflow in the sense that the quadrupolar structure of the molecular outflow is produced by the interaction with the ammonia condensationss, with Cep A-1 and Cep A-3 splitting in two halves, respectively the blue- and redshifted lobes of an east-west bipolar molecular outflow.

Torrelles, Jose M.↗
NASA NTRS1993

The structure of protostellar accretion disks and the origin of bipolar flows

Equations are obtained which govern the disk-wind structure and identify the physical parameters relevant to circumstellar disks. The system of equations is analyzed in the thin-disk approximation, and it is shown that the system can be consistently reduced to a set of ordinary differential equations in z. Representative solutions are presented, and it is shown that the apparent paradox discussed by Shu (1991) is resolved when the finite thickness of the disk is taken into account. Implications of the results for the origin of bipolar flows in young stellar objects and possible application to active galactic nuclei are discussed.

Wardle, Mark↗
NASA NTRS1992

Heterojunction bipolar transistor technology for data acquisition and communication

Heterojunction Bipolar Transistor (HBT) technology has emerged as one of the most promising technologies for ultrahigh-speed integrated circuits. HBT circuits for digital and analog applications, data conversion, and power amplification have been realized, with speed performance well above 20 GHz. At Rockwell, a baseline AlGaAs/GaAs HBT technology has been established in a manufacturing facility. This paper describes the HBT technology, transistor characteristics, and HBT circuits for data acquisition and communication.

Wang, C.↗
NASA NTRS1994

Bipolar lead-acid batteries for electrical actuation applications

This document presents in viewgraph format information on bipolar battery development at Johnson Controls, Incorporated. The organization structure, goals, progress to date, future plans, and battery parameters and electrical properties are given.

Pierce, Douglas C.↗
NASA NTRS1994

A bipolar outflow of ionized gas in K3-50A: H76 alpha radio recombination line and continuum observations of K3-50

The H II regions near K3-50 (G70.3 + 1.6) have been imaged at high angular resolution (approximately 1 sec .3) in the continuum and the recombination lines H76(sub alpha and He76(sub alpha) using the Very Large Array (VLA). The helium line is detected in only the brightest component K3-50A while the hydrogen line is detected in three components (K3-50A, B and C1). K3-50A shows a pronounced velocity gradient of approximately 150 km/sec/pc along its major axis (P.A. = 160 deg); in addition a wide range of line widths are observed, from 20 to 65 km/sec. Kinematics from the line data and the morphology of the continuum emission suggest that the ionized material associated with K3-50A is undergoing a high-velocity bipolar outflow.

Depree, C. G.↗
NASA NTRS1994

The near-infrared structure and spectra of the bipolar nebulae M2-9 and AFGL 2688: The role of ultraviolet pumping and shocks in molecular hydrogen excitation

High-resolution near-infrared images and moderate resolution spectra were obtained of the bipolar nebulae M2-9 and AFGL 2688. The ability to spatially and spectrally resolve the various components of the nebulae has proved to be important in determining their physical structure and characteristics. In M2-9, the lobes are found to have a double-shell structure. The inner shell is dominated by emission from hydrogen recombination lines, and the outer shell is primarily emission from H2 lines in teh 2-2.5 micron region. Analysis of H2 line ratios indicates that the H2 emission is radiatively excited. A well-resolved photodissociation region is observed in the lobes. The spectrum of the central source is dominated by H recombination lines and a strong continuum rising toward longer wavelengths consistent with a T = 795 K blackbody. Also present are lines of He I and Fe II. In contrast, the N knot and E lobe of M2-9 show little continuum emission. The N knot spectrum consists of lines of (Fe II) and hydrogen recombination lines. In AGFL 2688, the emission from the bright lobes is mainly continuum reflected from the central star. Several molecular features from C2 and CN are present. In the extreme end of the N lobe and in the E equatorial region, the emission is dominated by lines of H2 in the 2-2.5 region. The observed H2 line ratios indicate that the emission is collisionally excited, with an excitation temperature T(sub ex) approixmately = 1600 +/- 100 K.

Hora, Joseph L.↗
NASA NTRS1994

Multiple outflows in the bipolar planetary nebula M1-16: A molecular line study

Extensive observations of the molecular gas in the young, compact planetary nebula M1-16 have been made, using the Swedish-ESO-Submillimeter Telescope. A map of the CO J = 2-1 emission shows that the molecular envelope contains both a slow and a fast outflow with expansion velocities of 19 km/s and greater than 34 km/s, respectively. The slow outflow is mildly elliptical, while the fast molecular outflow is bipolar. This fast outflow is roughly aligned with the very fast outflows recently found in the optical, while the long axis of the slow elliptical outflow is roughly orthogonal to the optical outflow axis. The kinematic timescales for the CO fast outflow and the optical very fast outflow agree closely, supporting the view that the former represents material in the slow outflow accelerated by the very fast outflow. The kinematic signature of a disk expanding with about 15.5 km/s can also be seen in the CO J = 2-1 data. The mass-loss rate (a) for the slow outflow is greater than or equal to 2.8 x 10(exp -5) solar mass/yr and possibly as large as 9 x 10(exp -5) solar mass/yr, (b) for the fast outflow is greater than or equal to 5 x 10(exp -6) solar mass/yr, and (c) for the very fast optically visible outflow is approximately equal 5 x 10(exp -7) solar mass/yr. The disk mass is approximately equal 6 x 10(exp -3) solar mass. Grain photoelectric heating results in temperatures of 20-70 K in molecular gas of the slow outflow. The (13)C/(12)C abundance ratio in M1-16 is found to be 0.33, quite possibly the highest found for any evolved object. Upper limits for the (18)O/(16)O and (17)O/(16)O ratios were found to be consistent with the values found in AGB stars. A search for other molecular species in M1-16 resulted in the detection of the high-excitation species HCN, CN, (13)CN, HCO(+), and H(13)CO(+) and possibly N2H(+). Both the HCO(+)/HCN and CN/HCN line-intensity ratios are enhanced, the former by a very large factor, over the values found in the envelopes of AGB stars, probably as a result of enhancement of the CN and HCO(+) abundances due to photochemistry induced by the stellar UV. The CS J = 2-1, SiO J = 2-1 (v = 0), and SiS J = 6-5 lines were not detected to low levels. For the high-excitation molecules, adequate collisional excitation of rotational levels and survival against photodissociation by the UV radiation requires significant clumping of the molecular gas into clumps with H2 densities approximately 10(exp 5)/cu cm. The IRAS fluxes of M1-16, assuming negligible contribution from line emission, imply the presence of about (1.7-0.4) x 10(exp -3) solar mass of cool dust (temperature around 50 K) and a smaller quantity, (2.7-3.1) x 10(exp -6) solar mass, of warmer dust (temperature around 125 K) for a power-law emissivity index p = 1-2. The evolutionary nature of M1-16 cannot be explained by existing single-star models of post-AGB evolution. The very high (13)C/(12)C abundance ratio in M1-16 suggests a possible evolutionary connection between M1-16 and the rare class of J-type silicate-carbon stars which also have high (13)C/(12)C ratios and are thought to be binary systems with accretion disks.

Sahai, Raghvendra↗
NASA NTRS1992

Narrow band coronographic imaging of the bipolar nebula around the LBV R127

New high resolution narrow band coronographic images of the R127 nebula have been recently obtained. The nebula displays a bipolar morphology and is similar in appearance to the nebula around AG Carinae. The observations improve the values for the linear dimensions (1.9 x 2.2 pc) and yield an estimated nebular mass of 3.1 solar mass.

Clampin, Mark↗
NASA NTRS1999

Bipolar Nickel-Metal Hydride Battery Development Project

This paper reviews the development of the Electro Energy, Inc.'s bipolar nickel metal hydride battery. The advantages of the design are that each cell is individually sealed, and that there are no external cell terminals, no electrode current collectors, it is compatible with plastic bonded electrodes, adaptable to heat transfer fins, scalable to large area, capacity and high voltage. The design will allow for automated flexible manufacturing, improved energy and power density and lower cost. The development and testing of the battery's component are described. Graphic presentation of the results of many of the tests are included.

Cole, John H.↗
NASA NTRS1999

Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

Das, Kalyan↗
NASA NTRS1999

The "Water-Fountain Nebula" IRAS 16342-3814: Hubble Space Telescope/Very Large Array Study of a Bipolar Protoplanetary Nebula

We present Hubble Space Telescope (HST) Wide-Field Planetary Camera 2 images and VLA OH maser emission-line maps of the cold infrared object IRAS 16342-3814, believed to be a protoplanetary nebula. The HST images show an asymmetrical bipolar nebula, with the lobes separated by a dark equatorial waist. The two bright lobes and the dark waist are simply interpreted as bubble-like reflection nebulae illuminated by starlight escaping through polar holes in a dense, flattened, optically thick cocoon of dust, which completely obscures the central star. A faint halo can be seen surrounding each of the lobes. The bubbles are likely to have been created by a fast outflow (evidenced by H2O emission) plowing into a surrounding dense, more slowly expanding, circumstellar envelope of the progenitor asymptotic giant-branch (AGB) star (evidenced by the halo). The IRAS fluxes indicate a circumstellar mass of about 0.7 solar mass (D/2 kpc) and an AGB mass-loss rate of about 10(exp -4) solar mass/yr (V(sub exp)/15 km/s)(D/2 kpc)(sup 2) (assuming a gas-to-dust ratio of 200). OH features with the largest redshifted and blueshifted velocities are concentrated around the bright eastern and western polar lobes, respectively, whereas intermediate-velocity features generally occur at low latitudes, in the dark waist region. We critically examine evidence for the post-AGB classification of IRAS 16342-3814.

Sahal, Raghvendra↗
NASA NTRS2003

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Ponchak, George E.↗
NASA NTRS2002

Total dose dependency and ELDRS effects on bipolar linear devices

The use of bipolar linear devices is prevalent in most satellite and some space applications. However, degradation as a result of low dose irradiations known as ELDERS (effects of enhanced low dose rate sensitivity) is a major concern when selecting flight hardware. Many studies and reports have been conducted on this possible phenomenon as well as their responsible physical mechanisms.

ELDRS voltage regulator voltage reference↗
NASA NTRS2002

Total dose bias dependency and ELDRS effects in bipolar linear devices

Total dose tests of several bipolar linear devices show sensitivity to both dose rate and bias during exposure. All devices exhibited Enhanced Low Dose Rate Sensitivity (ELDRS). An accelerated ELDRS test method for three different devices demonstrate results similar to tests at low dose rate. Behavior and critical parameters from these tests are compared and discussed.

ELDRS voltage regulator voltage reference↗