Hybrid Simulation and Quasi-linear Theory of Bi-Kappa Proton Instabilities
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Phase relations at 850 and 870 C, melting transitions in air, oxygen, and helium were studied for Bi(2.1)Sr(1.9) CuO6 and for the Bi2Sr2Ca(n-1) Cu(n)O(2n+4) for n = 1, 2, 3, 4, 5, and infinity (CaCuO2). Up to 870 C, the n = 2 composition resides in the compatibility tetrahedron bounded by Bi(2+x)(Sr,Ca)(3-y) Cu2O8, (Sr,Ca)14 Cu24O41, Ca2CuO3, and a Bi-Sr-Ca-O phase. The n is greater than or equal to 3 compositions reside in the compatibility tetrahedron Bi(2+x)(Sr,Ca)(3-y) Cu2O8 - (Sr,Ca)14 Cu24O41 - Ca2CuO3 - CuO up to 850 C. However, Bi(2+x)Sr(4-y) Cu3O10 forms for n is greater than or equal to 3 after extended heating at 870 C. Bi(2+x)Sr(2-y) CuO6 and Bi(2+x)(Sr,Ca)(3-y) Cu2O8 melt in air at 914 C and 895 C respectively. During melting, all of the compositions studied lose 1 to 2 percent by weight of oxygen from the reduction of copper. Bi(2+x)Sr(2-y) CuO6, Bi(2+n)(Sr,Ca)(3-y) Cu2O8, and Bi(2+x)(Sr,Ca)(4-y) Cu3O10 exhibit crystallographic alignment in a magnetic field, with the c-axes orienting parallel to the field.
We have investigated the thermal, electrical, and structural properties of Bi and BiCu films that are being developed as X-ray absorbers for transition-edge sensor (TES) microcalorimeter arrays for imaging X-ray spectroscopy. Bi could be an ideal material for an X-ray absorber due to its high X-ray stopping power and low heat capacity, but it has a low thermal conductivity, which can result in position dependence of the pulses in the absorber. In order to improve the thermal conductivity, we added Cu layers in between the Bi layers. We measured electrical and thermal conductivities of the films around 0.1 K(sub 1) the operating temperature of the TES calorimeter, to examine the films and to determine the optimal thickness of the Cu layer. From the electrical conductivity measurements, we found that the Cu is more resistive on the Bi than on a Si substrate. Together with an SEM picture of the Bi surface, we concluded that the rough surface of the Bi film makes the Cu layer resistive when the Cu layer is not thick enough t o fill in the roughness. From the thermal conductivity measurements, we determined the thermal diffusion constant to be 2 x l0(exp 3) micrometers squared per microsecond in a film that consists of 2.25 micrometers of Bi and 0.1 micrometers of Cu. We measured the position dependence in the film and found that its thermal diffusion constant is too low to get good energy resolution, because of the resistive Cu layer and/or possibly a very high heat capacity of our Bi films. We show plans to improve the thermal diffusion constant in our BiCu absorbers.
The microdistributions of Bi and Pb-208 in the Khohar L3 chondrite were determined in situ using radiography techniques based on particle track detectors. Strong (enrichment factors 10 to 100) localizations of Bi were found in association with kamacite; no enhancement of Bi or Pb was found in sulfides. High-magnification microprobe and reflected light observations strongly indicate that Bi actually resides in the kamacite, providing evidence for the siderophilic nature. The minor and major element chemistry of the metals in the sample was typical of chondrites of its type. The unusual Bi distribution in the Khohar chondrite suggests that it may have been exposed to high Bi partial pressures during slow cooling at kamacite-taenite phase separation in a volatile-rich region of a parent body, or that Bi may have been incorporated into previously cooled grains by mild reheating.
The bismuth-doped rare-earth iron garnets, (R3-x-yBixPby)Fe5O12 (Bi:RIG, R = Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y), were prepared under constant growth conditions to investigate the influence of ionic species on the bismuth-based growth-induced uniaxial anisotropy K(u) exp g. The effect of ionic species on growth-induced anisotropy in Bi:RIG was not consistent with the ionic size model of site ordering. In particular, Bi:SmIG, Bi:EuIG, and Bi:TbIG displayed high growth-induced anisotropies, up to 331,000 erg/cu cm at room temperature for x of about 0.5. The temperature dependence of these K(u) exp gs was somewhat higher than that of the well studied Bi:YIG. The site ordering of Bi can be modeled by assuming that small, low-oxygen-coordination BiOw exp +3-2 w melt complexes have a strong site selectivity for small, high-oxygen coordination sites at the growth interface.
The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).
The cloud drop effective radius (Re) of the drop size distribution derived from passive satellite sensors is a key variable used in climate research. Validation of these satellite products has often taken place under stratiform cloud conditions that favor the assumption of cloud horizontal homogeneity used by the retrieval techniques. However, many studies have noted concerns with respect to significant biases in retrieved Re arising from cloud heterogeneity, for example, in cumulus cloud fields. Here, we examine data collected during the 2019 “Cloud, Aerosol and Monsoon Processes Philippines Experiment” (CAMP2Ex), which, in part, targeted the objective of providing the first detailed evaluation of Re retrieved across multiple platforms and techniques in a cumulus and congestus cloud region. Our evaluation consists of cross-comparisons of Re between the Moderate Resolution Imaging Spectroradiometer (MODIS) onboard the Terra satellite, the Research Scanning Polarimeter (RSP) onboard the NASA P-3 aircraft, and in situ measurements from both the NASA P-3 and Learjet aircraft that are all taken in close spatiotemporal proximity to the same cloud fields. A particular advantage of our approach lies in the capability of the RSP to retrieve Re using a bi-spectral MODIS approach and a polarimetric approach, which allows for the evaluation of bi-spectral and polarimetric Re retrievals from an airborne perspective using the same samples. Averaged over all P-3 flight segments examined here for warm clouds, the RSP polarimetric method, the in situ method, and the bias-adjusted MODIS method of Fu et al. (2019) show a comparable median (mean ± standard deviation) for the Re samples of 9.6 (10.2 ± 4.0) µm, 11.0 (13.6 ± 11.3) µm, and 10.4 (10.8 ± 3.8) µm, respectively. These values are far lower than the values of 15.1 (16.2 ± 5.5) µm and 17.2 (17.7 ± 5.7) µm from the bi-spectral retrievals of RSP and MODIS, respectively. Similar results are observed when Re is segregated by cloud-top height and in detailed case studies. The clouds sampled during CAMP2Ex consist of mostly small (mean transect length ∼ 1.4 km) and low clouds (mean cloud-top height ∼ 1 km), which had more numerous small clouds than the trade wind cumuli sampled in past field campaigns such as Rain in Shallow Cumulus over the Ocean (RICO) and the Indian Ocean Experiment (INDOEX). The overestimates of Re from the RSP bi-spectral technique compared with the polarimetric technique increased as cloud size and cloud optical depth decreased. Drizzle, cloud-top bumpiness, and solar zenith angle, however, are not closely correlated with the overestimate of bi-spectral Re. For shallow clouds that dominated the liquid cloud cover for the CAMP2Ex region and period, we show that 3-D radiative transfer and cloud heterogeneity, particularly for the optically thin and small clouds, appear to be the leading cause of the large positive biases in bi-spectral retrievals. Because this bias varies with the underlying structure of the cloud field, caution continues to be warranted in studies that use bi-spectral Re retrievals in cumulus cloud fields.
In the last several years Dr. Stringfellow's group at the University of Utah has reported success in incorporating over 3 percent Bi in InAs and 1.5 percent in InAsSb using Organometallic Vapor Phase Epitaxy (OMVPE) growth techniques. For InAs the lattice constant increase is linear with a=6.058+0.966x (InAs(1-x)Bi(x)), and a decrease in band gap energy of dEg / dx = -55meV / at a percentage Bi. Extrapolating this to the ternary minimum band gap at InAs(0.35)Sb(0.65), an addition of 1 to 2 percent Bi should drop the band gap to the 0.1 to 0.05eV range (10 to 20 microns). These alloys are direct band gap semiconductors making them candidates for far IR detectors. The current status of the InAsSbBi alloys is that good crystal morphology and x ray diffraction data has been obtained for up to 3.4 percent Bi. The Bi is metastable at these concentrations but the OMVPE grown material has been able to withstand the 400 C growth temperature for several hours without phase separation.
The reaction of YBa2Cu3O(7-beta) with Au, Ag, Bi, and Ph ions or metal is described. Three types of materials were produced: a well-defined series of homogeneous superconductors was obtained for Au ion substitution with little effect on T(sub c); attempted Ag and Bi ion substitution resulted in multi-phase samples with slightly enhanced T(sub c); finally, attempts to produce superconducting metal/superconducting ceramic composites with Pb and Bi powders resulted in multi-phase samples with drastically diminished superconducting properties. For Au- substituted superconductors, YBa2(Cu(l-x)Au(x))3O(7-beta), a substitution series (x = 0 - 0.1) has been synthesized. For x = 0.1 there was no change in the a and b lattice parameters (a = 3.826 A and b = 3.889 A) but a 0.06 A c axis expansion to 11.75 A was observed. The valence of Cu and Au in YBa2Au(0.3)Cu(2.7)O(7-beta) was investigated using X-ray Absorption Near-Edge Structure (XANES). X-ray studies indicate that Au goes into the Cu(l) site and Cu K edge XANES shows that this has little effect on the oxidation state of the remaining copper. A small effect on T(sub c) is observed (T(sub c) = 89 K for x = 0.10). Ag and Bi addition results in a rise in T(sub c) and a decrease in (delta)T(sub c) at low levels (x = 0.10 Ag, T(sub c) = 94 K and (delta)T(sub c) = 0.5 K; x = 0.02 Bi, T(sub c) = 94 K and (delta)T(sub c) = 1K) relative to typical values for YBa2Cu3O(7-beta) (T(sub c) = 91 K, (delta)T(sub c) = 2 K). Attempts at fabrication of Pb- and Pb(1-x)Bi(x)-superconductor composites are described. Cold pressing followed by low temperature (200 C) sintering resulted in a composite which excluded flux below 90 K but did not show zero electrical resistance until the metal (alloy) superconducting transition. X-ray diffraction showed the presence of pervoskite and metal. Processing at moderate (450 C) or high (950 C) temperatures resulted in oxygen-depleted pervoskite and/or metal oxides. These materials displayed greatly degraded superconducting properties. Processing at 800 C resulted in high T(sub c) only for composites containing greater than 90% weight fraction ceramic. Reaction of metal with YBa2Cu3O(7-beta) formed superconducting lead/bismuth-based oxides and other binary oxides.
The influence was studied of convection during directional solidification on the resulting microstructure of eutectics, specifically lead/tin and manganese/bismuth. A theory was developed for the influence of convection on the microstructure of lamellar and fibrous eutectics, through the effect of convection on the concentration field in the melt in front of the growing eutectic. While the theory agrees with the experimental spin-up spin-down results, it predicts that the weak convection expected due to buoyancy will not produce a measurable change in eutectic microstructure. Thus, this theory does not explain the two fold decrease in MnBi fiber size and spacing observed when MnBi-Bi is solidified in space or on Earth with a magnetic field applied. Attention was turned to the morphology of the MnBi-Bi interface and to the generation of freezing rate fluctuations by convection. Decanting the melt during solidification of MnBi-Bi eutectic showed that the MnBi phase projects into the melt ahead of the Bi matrix. Temperature measurements in a Bi melt in the vertical Bridgman-Stockbarger configuration showed temperature variations of up to 25 C. Conclusions are drawn and discussed.
The effect of Sb substitution and simultaneous substitution of Pb and Sb on the superconducting transition temperatures in the BiSrCaCuO system is investigated. The 2:2:2:3 phase is of particular interest since any small increase in the transition temperature could be of great interest. More that 90 different samples were prepared based on 2:2:2:3 stoichiometry in the BiSrCaCuO system. After this preliminary attempt, four different families of samples were investigated. In the first family of samples, Bi was substituted by Sb to form Bi(1.9)Sb(0.1)Sr2Ca2Cu3O(y). The second group of samples were prepared by simultaneous addition of Pb and Sb with nominal composition Bi(1.8)Pb(0.1)Sb(0.1)Sr2Ca2Cu3O(y). The third and fourth groups were prepared to determine the effect created when the Pb concentration is increased with the nominal compositions being Bi(1.7)Pb(0.1)Sr2Ca2Cu3O(y) and Bi(1.6)Sb(0.1)Sr2Ca2Cu3O(y). The results of these investigations are presented with a discussion.
As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.