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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FPGAs, optoelectronics, digital, analog, and bipolar devices.
The results of a destructive single-event effect susceptibility radiation test of the PNI RM3100 magnetometer sensor, specifically the MagI 2 C ASIC (application-specific integrated circuit) on the sensor board are presented. The sensor is a low-resource commercial off-the-shelf (COTS) magneto-inductive magnetometer. The device was monitored for destructive events and functional interruptions during exposure to a heavy ion beam at the Lawrence Berkeley National Laboratory's 88′′ Cyclotron. The RM3100 did not experience any destructive single-event effects when irradiated to a total fluence of 1.4 × 10 7 cm −2 at an effective linear energy transfer (LET) of 76.7 MeV cm 2 mg −1 while operated at nominal voltage (3.3 V) and elevated temperature (85 ∘C). When these results are combined with previous total ionizing dose tests showing no failures up to 150 kRad (Si), we conclude that the PNI RM3100 is extremely radiation tolerant and can be used in a variety of space environments.
The rapid evolution of electronics has heralded countless benefits to humanity, enabling increases in computing power while decreasing costs. However, the constantly changing semiconductor device landscape proves to be an immense challenge for the reliability community, especially for those concerned with radiation effects on microelectronics. Changes in device manufacturing, from device structure to processing steps, may and often do change the way the device responds to radiation. While radiation hardened parts are not as much of a reliability concern, they also lag behind commercial off-the-shelf, or COTS, parts in terms of computing capabilities, some by over a decade. Many missions may have no choice but to utilize COTS. As such, these missions need to ensure their parts are reliable in the face of total ionizing dose (TID). However, part and testing facility costs limit the amount of testing possible.
Radiation effects in electrical, electronic, electro-motive, and electro-optical (EEEE) hardware encompass a complex variety of interactions, processes, environments, and an evolving landscape of relevant hardware. Appropriately mitigating the effects of radiation in sensors, data acquisition, and control hardware is among the most significant challenges associated with deploying space nuclear power and propulsion systems. The expertise within EEEE radiation effects disciplines require working knowledge that is at least as complex and diverse as the problem itself, but that should not dissuade stakeholders and engineers in adjacent disciplines from attempting to understand the general principles associated with the problem at hand. This brief overview seeks to bring to the foreground a set of relevant topics that are of special importance for space nuclear propulsion applications that involve high rates of neutron and gamma radiation. The unique set of environments and design requirements for space nuclear systems mean that the experience and utility for methods applied to typical spaceflight hardware or terrestrial nuclear systems must not be applied naively. Forward consideration on the applicability of testing methods applied to either existing or bespoke hardware is likely to drive early decisions on system-wide radiation effects mitigation strategies, and will influence procurement requirements for providers of radiation tolerant hardware who are unlikely to have experience in this unique set of environments. Radiation hardness assurance (RHA) guidance should be adapted and emphasize the importance of hardware testing in the relevant environment. These must consider the combined effects of temperature, total ionizing dose (TID), non-ionizing/displacement damage (TNID/DD), and single event effects (SEE), and should consider the impacts of flux (rate) in addition to cumulative effects.
This presentation describes development and demonstrations of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. Silicon carbide (SiC) junction field effect transistor-resistor (JFET-R) ICs fabricated by NASA Glenn Research Center with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient, 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C temperature span) without significant change in signal (input /output) or power supply voltages. While the operating frequency and functional complexity is far below silicon-based ICs, these SiC application specific ICs (ASICs) are nevertheless becoming capable of providing unique and advantageous harsh-environment circuit functionality without cooling/sheltering overhead. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards manufacture, a majority of processing steps to realize the next SiC JFET-R IC prototype wafer run have been outsourced to commercial foundry. It is expected that further upscaling combined with technology transfer to commercial production will lower investment and risk barriers to useful application deployment.
Single-event effects (SEE) and total ionizing dose (TID) data are presented for several automotive- and industrial-grade solid-state drives, and the effects of different active test configurations on hardness assurance are explored.
A conservative design approach was adopted by the International Space Station Program for specifying total ionizing radiation dose requirements for use in selecting and qualifying materials for construction of the International Space Station. The total ionizing dose design environment included in SSP 30512 Space Station Ionizing Radiation Design Environment is based on trapped proton and electron fluence derived from the solar maximum versions of the AE-8 and AP-8 models, respectively, specified for a circular orbit at 500 km altitude and 51.7 degree inclination. Since launch, the range of altitudes utilized for Space Station operations vary from a minimum of approximately 330 km to a maximum of approximately 405 km with a mean operational altitude less than 400 km. The design environment, therefore, overestimates the radiation environment because the particle flux in the South Atlantic Anomaly is the primary contributor to radiation dose in low Earth orbit and flux within the Anomaly is altitude dependent. In addition, a 2X multiplier is often applied to the design environment to cover effects from the contributions of galactic cosmic rays, solar energetic particle events, geomagnetic storms, and uncertainties in the trapped radiation models which are not explicitly included in the design environment. Application of this environment may give radiation dose overestimates on the order of 1OX to 30X for materials exposed to the space environment, suggesting that materials originally qualified for ten year exposures on orbit may be used for longer periods without replacement. In this paper we evaluate the "as flown" radiation environments derived from historical records of the ISS flight trajectory since launch and compare the results with the SSP 30512 design environment to document the magnitude of the radiation dose overestimate provided by the design environment. "As flown" environments are obtained from application of the AE-8/AP-8 trapped particle models along the ISS flight trajectory including variations in altitude due to decay of the vehicle orbit and periodic reboosts to higher altitudes. In addition, an estimate of the AE-8 model to predict low Earth orbit electron flux (because the radiation dose for thin materials is dominated by the electron component of the radiation environment) is presented based on comparisons of the AE-8 model to measurements of electron integral flux at approximately 850 km from the Medium Energy Proton and Electron Detector on board the NOAA Polar Operational Environmental Satellite.
NASA's Constellation program, initiated to fulfill the Vision for Space Exploration, will create a new generation of vehicles for servicing low Earth orbit, the Moon, and beyond. Space radiation specifications for space system hardware are necessarily conservative to assure system robustness for a wide range of space environments. Spectral models of solar particle events and trapped radiation belt environments are used to develop the design requirements for estimating total ionizing radiation dose, displacement damage, and single event effects for Constellation hardware. We first describe the rationale using the spectra chosen to establish the total dose and single event design environmental specifications for Constellation systems. We then compare variability of the space environment to the spectral design models to evaluate their applicability as conservative design environments and potential vulnerabilities to extreme space weather events
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A total dose analysis for exposure of electronic parts at the box level is presented for the Hubble Space Telescope. This was done using solid angle sectoring/3-dimensional ray trace and Monte Carlo radiation transport simulations. Results are discussed in terms of parts that are potential total dose concerns.
We present reliability data combined with total dose gamma radiation for one of the first commercially available resistive memory devices. These Tantalum Oxide (TaOX)-based resistive memory chips demonstrate operation in dynamic program and erase testing up to ~130 Krad(Si) of 60Co gamma dose. In static and unbiased conditions, the stored data in the memory cells were able to withstand up to 50Mrad(Si) of exposure. The access circuitry, though, seemed less robust to gamma radiation and was able to operate only up to a total dose of 3Mrad(Si). Post exposure reliability as indicated by endurance, cycling error rate, and data retention tests showed no detectable impact from the combination with prior gamma irradiation. Overall, the total dose radiation tolerance of the commercial TaOx-based resistive memory chip appears to be higher than flash memory chips and in agreement with prior tests conducted with single cell resistive memories.
Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the design margin concept with one of failure probability.
The opportunity to compare cosmic radiation effects caused during long and short duration exposure flights in biological objects are limited until now, and data obtained so far are very rare and insufficient. Because of the very long exposure of the experiment during the Long Duration Exposure Facility (LDEF) mission (approximately 2000 days) structural changes of the hardware material can be expected which will influence its biocompatibility and, thus, will interact with the radiobiological effects. The aim of the experiment flown on LDEF was a detailed investigation of biological effects caused by cosmic radiation especially of particles of high atomic number Z and high energy. The flight hardware consisted of standard BIOSTACK containers; in these containers a special sandwich construction consisted of visual plastic detectors with seed rsp. spore layers interlocked.
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This paper documents recent TID (including ELDRS) and proton damage test results obtained by JPL. Unusual test results, such as abnormally low or high failure levels or unusual failure or response mechanisms, are emphasized.
Hardware design environments for NASA's Constellation Program-the Vision for Space Exploration program to design and build new vehicles for servicing low Earth orbit and the Moon and beyond-have been developed that are necessarily conservative in nature to assure robust hardware design and development required to build space systems which will meet operational goals in a wide range of space environments, This presentation will describe the rationale used to establish the space radiation and plasma design environments specified for a variety of applications including total ionizing radiation dose, dose rate effects, and spacecraft charging and will compare the design environments with "space weather" variability to evaluate the applicability of the design environments and potential vulnerabilities of the system to extreme space weather events.
Spectral models of solar particle events and trapped radiation belts are necessary for the design requirements of total ionizing radiation dose, single event effects, and spacecraft charging. Space radiation and plasma environment specifications for hardware design are necessarily conservative to assure system robustness for a wide range of space environments.
We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.