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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14

All sources NASA NTRS DOE OSTI

NASA NTRS1983

Development of a segmented n-type germanium detector, and its application to astronomical gamma-ray spectroscopy

Extensive calculations and simulations have shown that the instrumental background in a coaxial germanium photon detector flown at balloon altitudes or in space, can be substantially reduced by segmenting the outer contact. The contact is divided into horizontal strips around the side of the detector, giving it many characteristics similar to that of a stack of planar detectors. By choosing different segment coincidence requirements in different energy ranges, one can obtain a factor of approx. 2 increase in sensitivity to spectral lines between 40 keV and 1 MeV, compared with an unsegmented detector. The reverse electrode configuration (using n-type germanium), with the p contact outside, is preferred for this application due to its thin dead layer and resistance to radiation damage in space. A small two segment n type detector is being developed to serve as a prototype for larger multisegment devices. Results of this development effort and of detector tests are presented.

Gehrels, N.↗

NASA NTRS1984

The development of a segmented N-type germanium detector, and its application to astronomical gamma-ray spectroscopy

Gehrels, N.↗

NASA NTRS1986

Water permeation and electrical properties of pottants, backings, and pottant/backing composites

It is reported that the interface between plastic film back covers and ethylene vinyl acetates (EVA) or polyvinyl butyral (PVB) in photovoltaic modules can influence water permeation, and electrial properties of the composites such as leakage current and dielectric constant. The interface can either be one of two dissimilar materials in physical contact with no intermixing, or the interface can constitute a thin zone which is an interphase of the two materials having a gradient composition from one material to the other. The former condition is described as a discrete interface. A discrete interface model was developed to predict water permeation, dielectric strength, and leakage current for EVA, ethylene methyl acrylate (EMA), and PVB coupled to Tedlar and mylar films. Experimental data was compared with predicted data.

Orehotsky, J.↗

NASA NTRS1990

The effect of coatings and liners on heat transfer in a dry shaft-bush tribosystem

The temperatures due to frictional heating within a solid lubricated or coated journal bearing were analyzed by using a finite element method. A solid model of the shaft-bush tribocontact was generated with an eight-node, three-dimensional, first-order isoparametric heat-transfer element and the Patran solid modeler software. The Patmar (Patran-Marc) translator was used to help develop the Marc-based finite element program for the system; this software was used on the Cray X-MP supercomputer to perform a finite element analysis of the contact. The analysis was performed for various liner materials, for thin, hard, wear-resistant coated bearings, and for different geometries and thermal cooling boundary conditions. The analyses indicated that thermal conductivity of the liner or coating material is the most vital thermal parameter that controls the interface temperature. In addition to design variations, the proximity of the cooling source to the heat-flux-generating interface is critically important to the temperature control in the system.

Ghosh, Mihir K.↗

NASA NTRS1990

Heat flux induced dryout and rewet in thin films

Heat flux induced dryout of thin liquid films on an inclined copper plate was studied. Rewet of the dried out area is also considered. The four fluids used to form the thin films exhibited very different dryout and rewet characteristics. The contact angle and hysteresis effects were found to be important, but they must be considered in context with other parameters. No single variable was found to independently determine the pattern of dryout and rewet.

Stroes, Gustave↗

NASA NTRS1994

Status of diffused junction p+n InP solar cells for space applications

Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Faur, Mircea↗

NASA NTRS2010

Electrically Variable Resistive Memory Devices

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Liu, Shangqing↗

DOE OSTI2022

Lithium metal recovery and synthesis

A process and system for creating a lithium ion anolyte from lithium alloys. Metal and lithium alloys are processed to remove the metal with lithium from the alloy remaining. A lithium ion anolyte formed may be used in a process to form lithium metal. Alternatively, a process and system for recovering lithium from sources such as lithium alloys and lithium metal oxides and other feedstock such as recycled batteries into a thin lithium metal film via electrodeposition in an organic electrolyte contacting both anode (holder for lithium source) and cathode (substrate for lithium deposition) in a single-compartment electrolysis cell.

Ignacio de Leon, Patricia Anne↗

DOE OSTI2025

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗

NASA NTRS1981

Development of thin wraparound junction silicon solar cells

The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

Ho, F.↗

NASA NTRS1991

The Influence of Interstitial Ga and Interfacial Au (sub 2)P (sub 3) on the Electrical and Metallurgical Behavior of Au-Contacted III-V Semiconductors

The introduction of a very small amount of Ga into Au contact metallization on InP is shown to have a significant effect on both the metallurgical and electrical behavior of that contact system. Ga atoms in the interstices of the Au lattice are shown to be effective in preventing the solid state reactions that normally take place between Au and InP during contact sintering. In addition to suppressing the metallurgical interaction, the presence of small amounts of Ga is shown to cause an order of magnitude reduction in the specific contact resistivity. Evidence is presented that the reactions of GaP and GaAs with Au contacts are also drastically affected by the presence of Ga. The sintering behavior of the Au-GaP and the Au-GaAs systems (as contrasted with that of the Au-InP system) is explained as due to the presence of interstitial Ga in the contact metallization. Finally the large, two-to-three order of magnitude drop in the contact resistance that occurs in the Au-InP system upon sintering at 400 degrees Centigrade is shown to be a result of the formation of an Au (sub 2) P (sub 3) layer at the metal-semiconductor interface. Contact resistivities in the 10 (sup -6) ohm square centimeter range are obtained for as-deposited Au on InP when a thin (20 Angstrom) layer of Au (sub 2) P (sub 3) is introduced between the InP and the Au contacts.

Weizer, Victor G.↗

NASA NTRS1995

Probes Measure Slots

Contact probes devised for measuring depths and widths of slots. Configured in conical or wedge shapes, depending on specific applications. Conical or wedge surface of probe centers probe in slot, while two thin probe rods made to protrude from cone or wedge until their tips simultaneously make contact with outer surface and bottom of slot.

Maslakowski, John E.↗

DOE OSTI2022

Process–Structure–Properties Relationships of Passivating, Electron-Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus-Doped Polysilicon

Not provided.

Materials Science↗

NASA NTRS1982

Recent developments in thin silicon solar cells

Fifty micron thick cells 2x4 sq cm area with coplanar back contacts were made with good yield, and with output equivalent to conventional top/bottom contact cells of the same thickness. A wraparound junction (WAJ) design was selected, and used successfully. The low alpha cells delivered were all above 12%, the average efficiency was 13% and the best was 14%. The overall yield was 35 to 40%, comparable to that for conventional 50 micron cells. The process sequence was moderately complex, but showed good reproducibility. The CBC cells performed wall under several important environmental tests. High alpha CBC cells were made, with about 1% increase in conversion efficiency. The most important design criteria were the choice of back surface N+ and P+ areas.

Ho, F.↗

NASA NTRS2011

Thin film ceramic thermocouples

A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

Gregory, Otto↗

NASA NTRS1980

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

Allison, J. F.↗

DOE OSTI2025

Statistical Analysis of Intertube Tunneling Contacts in the Macroscopic Electrical Conductivity of Carbon Nanotube Fibers

Here, this study investigates the influence of tunneling contact resistances between carbon nanotubes (CNTs) on electron transport and electrical conductivity of macroscopic carbon nanofibers (CNFs), which profoundly impacts the performance of CNT thin film electronics, CNF electron emitters and cathodes, and energy conversion and storage devices. Utilizing a self-consistent electrical contact model coupling a transmission line model with tunneling current, we calculate the contact resistances of a plethora of CNT-CNT contacts within a CNF fiber, which consists of aligned, densely packed CNTs. A statistical analysis is conducted, using Gaussian distributions to account for variations in contact lengths, tunneling gap distances, and single CNT aspect ratios, to calculate the CNT-CNT contact resistance and the overall resistance of CNT fiber. By scaling our model to a macroscopic level, our results are in good agreement with experimental measurements. Our calculation suggests that while increasing the contact overlap length diminishes individual CNT-CNT contact resistance, it could paradoxically increase macroscopic CNT fiber resistance for a given constant CNF mass density, which is due to that fact that a larger overlap length allows more CNTs to pack along an electrical conduction path per unit length, leading to more tunneling contact junctions connected in series and thus less number of parallel conduction paths within the fiber cross section. Increasing tunneling gap distance increases both individual contact and overall fiber resistance. This research provides a simple design tool for tailoring CNT fiber electrical properties to promote real-world applications using CNTs or similar low-dimensional materials.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Stable magnesium zinc oxide by reactive Co-Sputtering for CdTe-based solar cells

Magnesium zinc oxide (MZO) is a promising front contact material for CdTe solar cells. Due to its higher band gap than traditional CdS, MZO can reduce parasitic absorption to significantly increase short-circuit current density while also providing a benefit of conduction band offset tuning through Mg:Zn ratio optimization. MZO has been successfully implemented into CdTe devices, however its stability has been of concern. The MZO stability issue has been attributed to the presence of oxygen in the CdTe device processing ambient, leading to double-diode behavior (S-kink) in the current density-voltage curves. Here we report on MZO thin films deposited by reactive co-sputtering. The reactively co-sputtered MZO thin films have encouraging stability, show no significant variation in work function of the surface over a period of 6 months, as measured by Kelvin probe. Energy conversion efficiencies of around 16% have been achieved both with and without presence of oxygen in device processing ambients across multiple research facilities. Finally, these efficiencies should be possible to increase further by tuning of the thin film deposition and device processing parameters, especially through optimization of the back contact.

14 SOLAR ENERGY↗