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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Radio Frequency (RF) Micro-Electromechanical Systems (MEMS) Switches for Space Communications

Micro-electromechanical systems (MEMS) is an emerging technology for radio frequency (RF) systems because it has the potential to dramatically decrease loss and improve efficiency. In this paper, we address the design and fabrication of novel MEMS switches being developed at NASA Glenn Research Center. Two types of switches are being developed: a microstrip series single pole single throw (SPST) switch and a coplanar waveguide (CPW) series SPST and single pole double throw (SPDT) switches. These are being fabricated as an integral part of 50 Ohm microstrip and CPW RF integrated circuits using microfabrication techniques. The construction of the switch relies on a cantilever beam that is partially supported by a dielectric post. The cantilever beam is electro-magnetically actuated. To decrease stiction, a Si3N4 thin film is deposited over the contact area. Thus, when the switch is closed, the ON-state insertion loss is governed by the parallel plate capacitance formed by the two contacts. The isolation in the OFF-state is governed by the parasitic capacitance when the cantilever is in the up position. RF MEMS switches have been demonstrated with 80% lower insertion loss than conventional solid state devices (GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and Silicon PIN diodes) based switches. For example, a conventional GaAs five-bit phase shifter which is required for beam steering in a phased array antenna has approximately 7 dB of insertion loss at 26.5 GHz where as a comparable MEMS based phase shifter is expected to have only 2 dB of insertion loss. This translates into 56% lower power dissipation and therefore decreases the thermal load on the spacecraft and also reduces the power amplifier requirements. These benefits will enable NASA to build the next generation of deep space science crafts and micro/nano satellites.

Simons, Rainee N.↗
NASA NTRS2008

RF MEMS Switches with SiC Microbridges for Improved Reliability

Radio frequency (RF) microelectromechanical (MEMS) switches offer superior performance when compared to the traditional semiconductor devices such as PIN diodes or GaAs transistors. MEMS switches have a return loss (RL) better than -25 dB, negligible insertion loss (IL), isolation better than -30 dB, and near zero power consumption. However, RF MEMS switches have several drawbacks the most serious being long-term reliability. The ability for the switch to operate for millions or even billions of cycles is a major concern and must be addressed. MEMS switches are basically grouped in two categories, capacitive and metal-to-metal contact. The capacitive type switch consists of a movable metal bridge spanning a fixed electrode and separated by a narrow air gap and thin insulating material. The metal-to-metal contact type utilizes the same basic design but without the insulating material. After prolonged operation the metal bridges, in most of these switches, begin to sag and eventually fail to actuate. For the metal-to-metal type, the two metal layers may actually fuse together. Also if the switches are not packaged properly or protected from the environment moisture may build up and cause stiction between the top and bottom electrodes rendering them useless. Many MEMS switch designs have been developed and most illustrate fairly good RF characteristics. Nevertheless very few have demonstrated both great RF performance and ability to perform millions/billions of switching cycles. Of these, nearly all are of metal-to-metal type so as the frequency increases RF performance decreases.

Scardelletti, Maximilian C.↗
NASA NTRS1985

Frequency tuning characteristics of a Q-switched Co:MgF2 laser

A tunable Q-switched Co:MgF2 laser has been developed for atmospheric remote sensing applications. Frequency tuning is provided by a quartz etalon and a specially designed three-element birefringent filter covering the whole gain bandwidth of the Co:MgF2 laser. The laser has good temporal and spectral characteristics, with an emission linewidth of approximately 3 GHz (0.1 per cm).

Lovold, S.↗
NASA NTRS1994

Generating Submillimeter-Wave Frequencies From Laser Pulses

Semiconductor photoconductive switches generate electrical pulses containing submillimeter-wavelength carrier signals (frequency between 300 and 3,000 GHz) and harmonics thereof when illuminated with short-rise-time pulses from lasers. Device of this type used as local oscilator in heterodyne submillimeter-wave receiver. Electrical output of device coupled via transmission line, waveguide, or antenna to mixer circuitry of receiver. Phase delays between optically activated semiconductor switches determine output carrier frequencies. N electrical pulses generated by each laser pulse. Thus, fundamental output frequency is N times laser-pulse-repetition rate.

Spencer, Michael G.↗
DOE OSTI2026

Omega-Limit Sets and Input-To-State Stability in Power Grids with Switching Equilibria

This paper studies a power transmission system with both conventional generators (CGs) and distributed energy assets (DEAs) providing frequency control. We consider an operating condition with demand aggregating two dynamic components: one that switches between different values on a finite set, and one that varies smoothly over time. Such dynamic operating conditions may result from protection scheme activations, external cyber-attacks, or due to the integration of dynamic loads, such as data centers. Mathematically, the dynamics of the resulting system are captured by a system that switches between a finite number of vector fields - or modes -, with each mode having a distinct equilibrium point induced by the demand aggregation. To analyze the stability properties of the resulting switching system, we leverage tools from hybrid dynamic inclusions and the concept of ..omega.. -limit sets from sets. Specifically, we characterize a compact set that is semi-globally practically asymptotically stable under the assumption that the switching frequency and load variation rate are sufficiently slow. For arbitrarily fast variations of the load, we use a level-set argument with multiple Lyapunov functions to establish input-to-state stability of a larger set and with respect to the rate of change of the loads. The theoretical results are illustrated via numerical simulations on the IEEE 39-bus test system.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

A Control Scheme to Mitigate the Dead-Time Effects in a Wireless Power Transfer System

In practice, a dead-time is always provided between the complementary switching instances of the inverter phase-leg devices. At higher operating frequencies, the dead-time issues in wireless power transfer (WPT) systems become critical, especially as the power level increases. In certain operating conditions, the dead-time effect in wireless power transfer system affects the switching characteristics. Consequently, the switching losses in the power semiconductor devices increase and also impact the efficiency of the overall system. In this paper, a simple control scheme is proposed to eliminate the dead-time effect (or voltage polarity reversal) in the WPT inverter. The proposed control scheme monitors the inverter output voltage, and the switching frequency is auto-tuned to eliminate the undesired switching instances in the inverter voltage. The proposed control scheme is validated using the closed-loop simulations in PLECS, and the experimental results on a 5.6 kW WPT prototype are also presented. After eliminating the voltage-polarity-reversal at the inverter output, the inverter losses were reduced by ~40%, and the overall system losses were reduced by ~17%.

Kavimandan, Utkarsh↗
NASA NTRS1982

An improved switching converter model using discrete and average techniques

The nonlinear modeling and analysis of dc-dc converters has been done by averaging and discrete-sampling techniques. The averaging technique is simple, but inaccurate as the modulation frequencies approach the theoretical limit of one-half the switching frequency. The discrete technique is accurate even at high frequencies, but is very complex and cumbersome. An improved model is developed by combining the aforementioned techniques. This new model is easy to implement in circuit and state variable forms and is accurate to the theoretical limit.

Shortt, D. J.↗
DOE OSTI2021

Soft-switching, high performance single-phase AC-DC converter

A soft-switching, high-performance single-phase alternating current (AC)-direct current (DC) converter is provided. The AC-DC converter described herein provides a new circuit topology for single-stage, single-phase or multi-phase AC-DC power conversion with power factor correction (PFC) and galvanic isolation using a high-frequency isolation transformer. The AC-DC converter improves power conversion efficiency and power density—two of the most important metrics for a power converter. It achieves soft switching for high frequency switches in the circuit, leading to higher efficiency and lower electromagnetic interference (EMI).

Ayyanar, Rajapandian↗
NASA NTRS1982

20 x 20 IF switch matrix for SS-TDMA systems

Satellite-switched TDMA, an effective means for the increasing of communication satellite channel capacity and the improvement of system flexibility, requires that the spacecraft carry an IF switch matrix in order to provide interconnectivity among multiple beam antennas. Attention is presently given to the development of a 20 x 20 IF switch matrix for the NASA 30/20 GHz communications satellite which will provide a 2.5 GHz bandwidth at C-band frequencies with a switching speed of 10 nsec. Switch matrix architecture, switching device characteristic, and distribution control unit design practices are discussed, together with switch matrix reliability.

Ho, P. T.↗
NASA NTRS1988

Characteristics and kinetics of laser-pumped Ti:sapphire oscillators

The experimental performance of a gain-switched Ti:sapphire laser oscillator pumped by a frequency-doubled Q-switched Nd:YAG laser system is presented for a variety of operating conditions. A theoretical model developed for this oscillator predicts well its performance. The observed curved input-output energy plots for the oscillator result from the kinetics of gain switching and fluorescence decay during the gain buildup period. Fluorescence decay also produces observed oscillator thresholds higher than those normally predicted by the standard gain-equals-loss condition. Gain-switched parasitic modes, with a higher threshold but shorter round-trip time than the resonator mode, cause the resonator mode to oscillate only over a finite range of pump energies. Spectroscopic investigations show that the Ti:sapphire cross-section spectrum is well fit by a Poisson distribution, giving a peak cross section of 3 x 10 to the -19th sq cm for the pi polarization.

Eggleston, John M.↗
NASA NTRS1983

Acoustic system for material transport

An object within a chamber is acoustically moved by applying wavelengths of different modes to the chamber to move the object between pressure wells formed by the modes. In one system, the object is placed in one end of the chamber while a resonant mode, applied along the length of the chamber, produces a pressure well at the location. The frequency is then switched to a second mode that produces a pressure well at the center of the chamber, to draw the object. When the object reaches the second pressure well and is still traveling towards the second end of the chamber, the acoustic frequency is again shifted to a third mode (which may equal the first model) that has a pressure well in the second end portion of the chamber, to draw the object. A heat source may be located near the second end of the chamber to heat the sample, and after the sample is heated it can be cooled by moving it in a corresponding manner back to the first end of the chamber. The transducers for levitating and moving the object may be all located at the cool first end of the chamber.

Barmatz, M. B.↗
NASA NTRS1993

Statistical results from the Virginia Tech propagation experiment using the Olympus 12, 20, and 30 GHz satellite beacons

Virginia Tech has performed a comprehensive propagation experiment using the Olympus satellite beacons at 12.5, 19.77, and 29.66 GHz (which we refer to as 12, 20, and 30 GHz). Four receive terminals were designed and constructed, one terminal at each frequency plus a portable one with 20 and 30 GHz receivers for microscale and scintillation studies. Total power radiometers were included in each terminal in order to set the clear air reference level for each beacon and also to predict path attenuation. More details on the equipment and the experiment design are found elsewhere. Statistical results for one year of data collection were analyzed. In addition, the following studies were performed: a microdiversity experiment in which two closely spaced 20 GHz receivers were used; a comparison of total power and Dicke switched radiometer measurements, frequency scaling of scintillations, and adaptive power control algorithm development. Statistical results are reported.

Stutzman, Warren L.↗
DOE OSTI2023

Switch leakage mitigation through differential cancellation

High speed analog-to-digital converters (ADC), switched-capacitor delay elements, and pulsed radio frequency (RF) systems all require switches in the signal path operating at high switching speeds, providing low resistance when enabled, and providing high signal isolation when disabled. In semiconductor technologies such as CMOS, the enabled state resistance directly scales with the sizing of the switch device, where a larger width switch provides a lower enabled state resistance. As the device width is increased, so is the capacitance formed between the gate, drain, and source of the device.

42 ENGINEERING↗
DOE OSTI2026

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.

Engineering - Electronic and electrical engineerin↗
DOE OSTI2023

Mitigating dust particle contamination in an afterglow plasma by controlled lifting with a DC electric field

Abstract Particle contamination due to plasma processing motivates the design of a method of electrically lifting particles in a time interval after a plasma’s power is turned off. Small solid dust particles have electric charges that are not frozen until a late stage of the plasma afterglow. Beyond that time, before they fall to a surface below and cause defects, particles can be lifted in a controlled manner by applying an appropriate direct-current (DC) electric field, as we demonstrate experimentally. A few milliseconds after an argon plasma’s capacitively coupled radio-frequency power is switched off, a vertical DC electric field is applied. Thereafter, video imaging shows that the falling of the particles is slowed or stopped altogether, depending on the magnitude of the upward electric force.

Physics↗
NASA NTRS1972

A new device for communication systems

A communication device and modulation capability were developed for the transmission of digital data or voices from point to point. This device is a fast-switching phase coherent frequency synthesizer. When this synthesizer is appropriately incorporated in a communication system it can provide interference resistance, multiple-user capability, user identification, ranging, navigation, Doppler correction, and digitized communication (voice and data). The application of this device to aircraft/airport complex and law enforcement communications is discussed.

Beck, R. R.↗