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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Forest phenology and a warmer climate - Growing season extension in relation to climatic provenance

Predicting forest responses to warming climates relies on assumptions about niche and temperature sensitivity that remain largely untested. Observational studies have related current and historical temperatures to phenological shifts, but experimental evidence is sparse, particularly for autumn responses. A five-year field experiment exposed four deciduous forest species from contrasting climates (Liquidambar styraciflua, Quercus rubra, Populus grandidentata, and Betula alleghaniensis) to air temperatures 2 and 4 C above ambient controls. Impacts of year-round warming on bud burst (BB), senescence and abscission were evaluated in relation to thermal provenance. Leaves emerged earlier in all species, by an average of 6-9 days at +2 and +4 C. Magnitude of advance varied with species and year, but was larger for the first 2 C increment than the second. The effect of warming increased with early BB, favoring Liquidambar, from the warmest climate, but even BB in northern species advanced, despite temperatures well beyond those of the realized niche. Treatment differences in BB were poorly explained by temperature sums, which increased with treatment. In autumn, chlorophyll was retained an average of 4 and 7 days longer in +2 and +4 C treatments, and abscission delayed by 8 and 13 days. Species differences in autumn responses were marginally significant. Growing seasons in the warmer atmospheres were 6 - 28 days longer, with the least impact in Quercus. Results are compared with a 16-year record of canopy onset and offset in a nearby upland deciduous forest, where BB showed similar responsiveness to spring temperatures (2 - 4 days C-1). Offset dates in the stand tracked August-September temperatures, except when late summer drought caused premature senescence. The common garden-like experimental approach provides evidence that warming alone extends the growing season, at both ends, even if stand-level impacts are complicated by other environmental factors.

aspen↗
DOE OSTI2019

Dissimilar responses of fungal and bacterial communities to soil transplantation simulating abrupt climate changes

Both fungi and bacteria play necessary roles in regulating soil carbon cycling. To implement future carbon stability, it is imperative to understand their responses to environmental changes, which is subject to large uncertainty. As current global warming is causing range shifts toward higher latitudes, we conducted three reciprocal soil transplantation experiments over large transects in 2005 to simulate abrupt climate changes. Six years after soil transplantation, fungal biomass of transplanted soils showed a general pattern of changes from donor sites to destination, which were more obvious in bare fallow soils than in maize cropped soils. Strikingly, fungal community compositions were clustered by sites, demonstrating that fungi of transplanted soils acclimatized to the destination environment. Several fungal taxa displayed sharp changes in relative abundance, including Podospora, Chaetomium, Mortierella and Phialemonium. In contrast, bacterial communities remained largely unchanged. Consistent with the important role of fungi in affecting soil carbon cycling, 8.1%-10.0% of fungal genes encoding carbon-decomposing enzymes were significantly (p < 0.01) increased as compared with those from bacteria (5.7%-8.4%). To explain these observations, we found that fungal occupancy across samples was mainly determined by annual average air temperature and rainfall, whereas bacterial occupancy was more closely related to soil conditions, which remained stable 6 years after soil transplantation. Together, these results demonstrate dissimilar response patterns and resource partitioning between fungi and bacteria, which may have considerable consequences for ecosystem-scale carbon cycling.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2013

MR-guided focused ultrasound surgery, present and future

MR-guided focused ultrasound surgery (MRgFUS) is a quickly developing technology with potential applications across a spectrum of indications traditionally within the domain of radiation oncology. Especially for applications where focal treatment is the preferred technique (for example, radiosurgery), MRgFUS has the potential to be a disruptive technology that could shift traditional patterns of care. While currently cleared in the United States for the noninvasive treatment of uterine fibroids and bone metastases, a wide range of clinical trials are currently underway, and the number of publications describing advances in MRgFUS is increasing. However, for MRgFUS to make the transition from a research curiosity to a clinical standard of care, a variety of challenges, technical, financial, clinical, and practical, must be overcome. This installment of the Vision 20/20 series examines the current status of MRgFUS, focusing on the hurdles the technology faces before it can cross over from a research technique to a standard fixture in the clinic. It then reviews current and near-term technical developments which may overcome these hurdles and allow MRgFUS to break through into clinical practice.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2013

Integrated Water Gas Shift Membrane Reactors Utilizing Novel, Non Precious Metal Mixed Matrix Membrane

Nanoparticles of zeolitic imidazolate frameworks and other related hybrid materials were prepared by modifying published synthesis procedures by introducing bases, changing stoichiometric ratios, or adjusting reaction conditions. These materials were stable at temperatures >300 °C and were compatible with the polymer matrices used to prepare mixed- matrix membranes (MMMs). MMMs tested at 300 °C exhibited a >30 fold increase in permeability, compared to those measured at 35 °C, while maintaining H 2 /CO 2 selectivity. Measurements at high pressure (up to 30 atm) and high temperature (up to 300 °C) resulted in an increase in gas flux across the membrane with retention of selectivity. No variations in permeability were observed at high pressures at either 35 or 300 °C. CO 2 -induced plasticization was not observed for Matrimid®, VTEC, and PBI polymers or their MMMs at 30 atm and 300 °C. Membrane surface modification by cross-linking with ethanol diamine resulted in an increase in H 2 /CO 2 selectivity at 35 °C. Spectrometric analysis showed that the cross-linking was effective to temperatures <150 °C. At higher temperatures, the cross-linked membranes exhibit a H 2 /CO 2 selectivity similar to the uncross-linked polymer. Performance of the polybenzimidazole (PBI) hollow fibers prepared at Santa Fe Science and Technology (SFST, Inc.) showed increased flux and selectivity at 300 °C, which is comparable to a flat PBI membrane. A water-gas shift reactor has been built and currently being optimized for testing under DOE conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Performance Comparison of Machine Learning Models for Ultrasonic Nondestructive Evaluation of Alkali-Silica Reaction in Concrete

Alkali-silica reaction (ASR) causes concrete degradation, leading to cracking, rebar corrosion, and reduced structural integrity, which raises safety concerns. Ultrasonic nondestructive evaluation (NDE) effectively assesses concrete properties and monitors ASR progression. However, its deployment and analysis require specialized expertise and subjective interpretation. As computational power increases, artificial intelligence (AI) and machine learning (ML) algorithms are increasingly being used to automate NDE data analysis across various industries for AI-assisted automation. Regulatory agencies are adapting to this technological shift, prompting a need to evaluate current ML technologies’ capabilities and limitations in assessing concrete material properties and damage. This report presents a comparative analysis of four ML regression models for predicting concrete material damage induced by ASR expansion using long-term ultrasonic data monitoring. The models investigated include linear regression (LR), support vector regression (SVR), shallow neural networks (NN), and deep neural networks (DNN). LR, SVR, and shallow NN models use features extracted from ultrasonic signals, whereas the DNN model processes time-domain ultrasonic signals and frequency spectra directly. The study systematically compared the models’ performance from various perspectives, including model input, prediction performance, and generalization ability. The findings indicate significant variability in model performance, with some ML algorithms achieving very high or very low prediction accuracy depending on the preprocessing and feature engineering (extraction and selection) applied. Key insights include the observation that shallow ML models (LR, SVR, and shallow NNs) require meticulous preprocessing and feature extraction to achieve high accuracy. In contrast, the DNN model, although it bypasses the need for feature engineering, necessitates extensive preprocessing to mitigate noise and computational demands. The SVR model emerged as the top performer among the shallow models, and the DNN model exhibited superior performance on specific datasets but struggled with generalization across specimens from different batches. Additionally, the SVR model is sensitive to temperature variations, whereas the DNN model is robust in this regard. Using recurrent neural networks is recommended for future ASR expansion prediction studies. Recurrent neural networks’ inherent ability to capture temporal dependencies and long-term patterns makes them well suited for analyzing sequential ultrasonic monitoring data. Overall, the results and conclusions of this study could provide insights into the capabilities and effectiveness of ML when applied to ultrasonic NDE data and help identify best practices for using ML for ultrasonic NDE of concrete material properties.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered on PMOS transistors of different widths, W{sub NARROW} = 0.24 μm and W{sub WIDE} = 10 μm. The devices are irradiated using 10 keV X-rays at several total dose steps up to 3 MGy. On the one hand, negative threshold voltage shifts of more than 3.3 V are extracted after 3 MGy on narrow transistors. Even very high, this voltage shift is consistent with RINCE in narrow open layout transistors. On the other hand, voltage shifts greater than 2.5 V are extracted on wide transistors. Obviously, this result should not be associated neither to positive charge trapping in the thin gate oxide nor to any RINCE in this very wide transistor geometry. NMOS and PMOS transistors exhibit a clear asymmetrical behaviour. But contrary to what is commonly observed at 'low' TID range, the PMOS transistor is here more impacted than the NMOS one. The final paper will thus provide an extensive study of these phenomena using other device designs and geometries tested with dedicated TID experiments to discuss whether or not this effect revealed at very high TID, i.e. several MGy, may be attributed to an enhanced high-TID induced charge trapping mechanism in thin gate oxides. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Methods and apparatus for controlling respective load currents of multiple series-connected loads

A lighting apparatus (100) includes one or more first LEDs (202) for generating a first spectrum of radiation (503), and one or more second LEDs (204) for generating a second different spectrum radiation (505). The first and second LEDs are electrically connected in series between a first node (516A) and a second node (516B), between which a series current (550) flows with the application of an operating voltage (516) across the nodes. A controllable current path (518) is connected in parallel with one or both of the first and second LEDs so as to at least partially divert the series current, such that a first current (552) through the first LED(s) and a second current (554) through the second LED(s) are different. Such current diversion techniques may be employed to compensate for shifts in color or color temperature of generated light during thermal transients, due to different temperature-dependent current-to-flux relationships for different types of LEDs.

42 ENGINEERING↗
DOE OSTI2022

Using Lag Compensator in Orbit Feedback

Growing demand on the beam orbit stability requires higher loop gain inside the operational bandwidth. However, increasing the gain leads to the increase of the unity gain frequency and problems with systems stability due to the additional phase shifts caused by the trims (power supplies, eddy currents in vacuum chambers, etc.) and filtering of beam position data. Conventionally employed systems have 20 dB/decade slope near the unity gain providing 90 degrees phase shift which is sufficient for stability. Increase of the slope to 40 dB/decade by adding additional pole into the signal chain increases the phase shift to 180 degrees and makes system unstable. Utilizing one or more lag compensators allows to increase the gain while keeping phase margin acceptable. The paper provides more details on the proposed solution as well as simulations of how the transients will be modified.

43 PARTICLE ACCELERATORS↗
DOE OSTI2016

Evolution of mechanical properties of ultrafine grained 1050 alloy annealing with electric current

The tensile properties and microstructures of 1050 aluminum alloy prepared by equal channel angular pressing at cryogenic temperature (cryoECAP) after electric current annealing at 90–210 °C for 3 h were investigated by tensile test, electron back scattering diffraction (EBSD) and transmission electron microscopy (TEM). An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C, due to a significant decrease in the density of mobile dislocations after annealing, and thus a higher yield stress is required to nucleate alternative dislocation sources during tensile test. The electric current can enhance the motion of dislocations, lead to a lower dislocation density at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. Moreover, the electric current can promote the migration of grain boundaries at 150–210 °C, result in a larger grain size at 150 °C and 210 °C, and thus causes a lower yield stress. The sample annealed with electric current has a lower uniform elongation at 90–120 °C, and the deviation in the uniform elongation between samples annealed without and with electric current becomes smaller at 150–210 °C. - Highlights: • An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C. • The d. c. current can enhance the motion of dislocations at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. • The d. c. current can promote the grain growth at 150–210 °C, and thus cause a lower yield stress. • The DC annealed sample has a lower uniform elongation at 90–120 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Zeolite Membrane Reactor for Water Gas Shift Reaction for Hydrogen Production

Gasification of biomass or heavy feedstock to produce hydrogen fuel gas using current technology is costly and energy-intensive. The technology includes water gas shift reaction in two or more reactor stages with inter-cooling to maximize conversion for a given catalyst volume. This project is focused on developing a membrane reactor for efficient conversion of water gas shift reaction to produce a hydrogen stream as a fuel and a carbon dioxide stream suitable for sequestration. The project was focused on synthesizing stable, hydrogen perm-selective MFI zeolite membranes for high temperature hydrogen separation; fabricating tubular MFI zeolite membrane reactor and stable water gas shift catalyst for membrane reactor applications, and identifying experimental conditions for water gas shift reaction in the zeolite membrane reactor that will produce a high purity hydrogen stream. The project has improved understanding of zeolite membrane synthesis, high temperature gas diffusion and separation mechanisms for zeolite membranes, synthesis and properties of sulfur resistant catalysts, fabrication and structure optimization of membrane supports, and fundamentals of coupling reaction with separation in zeolite membrane reactor for water gas shift reaction. Through the fundamental study, the research teams have developed MFI zeolite membranes with good perm-selectivity for hydrogen over carbon dioxide, carbon monoxide and water vapor, and high stability for operation in syngas mixture containing 500 part per million hydrogen sulfide at high temperatures around 500°C. The research teams also developed a sulfur resistant catalyst for water gas shift reaction. Modeling and experimental studies on the zeolite membrane reactor for water gas shift reaction have demonstrated the effective use of the zeolite membrane reactor for production of high purity hydrogen stream.

08 HYDROGEN↗
DOE OSTI2014

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd{sub max} using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2016

An Improved Distributed Secondary Control Method for DC Microgrids With Enhanced Dynamic Current Sharing Performance

This paper proposes an improved distributed secondary control scheme for dc microgrids (MGs), aiming at overcoming the drawbacks of conventional droop control method. The proposed secondary control scheme can remove the dc voltage deviation and improve the current sharing accuracy by using voltage-shifting and slope-adjusting approaches simultaneously. Meanwhile, the average value of droop coefficients is calculated, and then it is controlled by an additional controller included in the distributed secondary control layer to ensure that each droop coefficient converges at a reasonable value. Hence, by adjusting the droop coefficient, each participating converter has equal output impedance, and the accurate proportional load current sharing can be achieved with different line resistances. Furthermore, the current sharing performance in steady and transient states can be enhanced by using the proposed method. The effectiveness of the proposed method is verified by detailed experimental tests based on a 3 × 1 kW prototype with three interface converters.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2019

Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO 2 /Al 2 O 3 Dielectrics

Here, total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO 2 /Al 2 O 3 gate-stack. Transistors are irradiated up to 500 krad(SiO 2 ) and annealed at high temperatures. Irradiated devices show negative threshold-voltage V th shifts, subthreshold stretch-out, and leakage current increases. These result from positive charge trapping in the gate oxide and shallow trench insulators, and increases in the interface and border-trap charge densities. Low-frequency noise measurements at different temperatures indicate a significant increase of noise magnitude in irradiated devices at an activation energy of ~0.4 eV. Density functional theory (DFT) calculations strongly suggest that transistor V th shifts are due primarily to hole trapping at oxygen vacancies in HfO 2 , and the increased noise is due primarily to O vacancies in Al 2 O 3 . Additional contributions to the noise from defects in the GaAs buffer layer are also likely, primarily at low temperatures.

total dose effects↗
DOE OSTI2015

Neutral particle dynamics in a high-power RF source

Previous studies on the spatial discharge structure in the SPIDER source of negative hydrogen/deuterium ions carried out at low applied power are extended towards description of the discharge maintenance under the conditions of the actual rf power deposition of 100 kW planned for a single driver of the source. In addition to the expected higher electron density, the results show strong increase of the electron temperature and of the temperatures of the neutral species (hydrogen atoms and molecules). In the discussions, not only the spatial distribution of the plasma parameters but also that of the fluxes in the discharge (particle and energy fluxes) is involved. The obtained results come in confirmation of basic concepts for low-pressure discharge maintenance: (i) mutually related electron density and temperature as a display of the generalized Schottky condition, (ii) discharge behavior governed by the fluxes, i.e. strong nonlocality in the discharge, and (iii) a non-ambipolarity in the discharge regime, which originates from shifted maxima of the electron density and temperature and shows evidence in a vortex electron flux and in a dc current in a rf discharge, the latter resulting from a shift in the positions of the maxima of the electron density and plasma potential.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Benefits of Energy Efficient and Low-Global Warming Potential Refrigerant Cooling Equipment

Hydrofluorocarbons (HFCs) are the fastest growing type of greenhouse gases (GHG) emissions, increasing at an annual rate of 10-15% [1]. HFCs are primarily used as refrigerants in air conditioning and refrigeration equipment and have a global warming potential (GWP) many thousands of times greater than CO 2 . Their rapid growth has led to a global agreement to aggressively phase down their production by amending the Montreal Protocol on Substances that Deplete the Ozone Layer [2]. We quantify the GHG benefits implementing aggressive but economic energy efficiency measures (about 30% more efficient than current technology) in air-conditioning (AC) and large commercial refrigeration equipment (CRE) together with low-GWP refrigerants. Shifting the 2030 world stock of room ACs and CRE from current levels of energy-efficiency and high-GWP refrigerants to “economic” energy efficiency levels and low-GWP refrigerants by 2050 would avoid up to 240.1 GT CO 2e and shifting to “best-available technology” energy efficiency levels and low GWP refrigerants by 2050 would avoid up to 373 GT CO 2e with existing electricity grid emission factors. About two-thirds of this cumulative savings are from reduced electricity sector emissions from improved energy efficiency. Thus, it is highly beneficial to pursue high energy efficiency in concert with the transition to lower GWP refrigerants to achieve maximal GHG reductions with the least amount of equipment re-design and replacement.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2014

Monte Carlo calculations of electron beam quality conversion factors for several ion chamber types

Purpose: To provide a comprehensive investigation of electron beam reference dosimetry using Monte Carlo simulations of the response of 10 plane-parallel and 18 cylindrical ion chamber types. Specific emphasis is placed on the determination of the optimal shift of the chambers’ effective point of measurement (EPOM) and beam quality conversion factors. Methods: The EGSnrc system is used for calculations of the absorbed dose to gas in ion chamber models and the absorbed dose to water as a function of depth in a water phantom on which cobalt-60 and several electron beam source models are incident. The optimal EPOM shifts of the ion chambers are determined by comparing calculations of R{sub 50} converted from I{sub 50} (calculated using ion chamber simulations in phantom) to R{sub 50} calculated using simulations of the absorbed dose to water vs depth in water. Beam quality conversion factors are determined as the calculated ratio of the absorbed dose to water to the absorbed dose to air in the ion chamber at the reference depth in a cobalt-60 beam to that in electron beams. Results: For most plane-parallel chambers, the optimal EPOM shift is inside of the active cavity but different from the shift determined with water-equivalent scaling of the front window of the chamber. These optimal shifts for plane-parallel chambers also reduce the scatter of beam quality conversion factors, k{sub Q}, as a function of R{sub 50}. The optimal shift of cylindrical chambers is found to be less than the 0.5 r{sub cav} recommended by current dosimetry protocols. In most cases, the values of the optimal shift are close to 0.3 r{sub cav}. Values of k{sub ecal} are calculated and compared to those from the TG-51 protocol and differences are explained using accurate individual correction factors for a subset of ion chambers investigated. High-precision fits to beam quality conversion factors normalized to unity in a beam with R{sub 50} = 7.5 cm (k{sub Q}{sup ′}) are provided. These factors avoid the use of gradient correction factors as used in the TG-51 protocol although a chamber dependent optimal shift in the EPOM is required when using plane-parallel chambers while no shift is needed with cylindrical chambers. The sensitivity of these results to parameters used to model the ion chambers is discussed and the uncertainty related to the practical use of these results is evaluated. Conclusions: These results will prove useful as electron beam reference dosimetry protocols are being updated. The analysis of this work indicates that cylindrical ion chambers may be appropriate for use in low-energy electron beams but measurements are required to characterize their use in these beams.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2017

Constraining the relative velocity effect using the Baryon Oscillation Spectroscopic Survey

Here, we analyse the power spectrum of the Baryon Oscillation Spectroscopic Survey (BOSS) Data Release 12 to constrain the relative velocity effect, which represents a potential systematic for measurements of the baryon acoustic oscillation (BAO) scale. The relative velocity effect is sourced by the different evolution of baryon and cold dark matter perturbations before decoupling. Our power spectrum model includes all one-loop redshift-space terms corresponding to vbc parametrized by the bias parameter b$2\atop{v}$ . We also include the linear terms proportional to the relative density, δbc, and relative velocity dispersion, θbc, which we parametrize with the bias parameters b$bc\atop{δ}$ and b$bc\atop{θ}$. This data does not support a detection of the relative velocity effect in any of these parameters. Combining the low- and high-redshift bins of BOSS, we find limits of b$2\atop{v}$=0.012±0.015(±0.031) , b$bc\atop{δ}$=-1.0±2.5(±6.2) and b$bc\atop{θ}$=-114±55(±175) with 68 percent (95 percent) confidence levels. These constraints restrict the potential systematic shift in D A (z), H(z) and fσ8, due to the relative velocity, to 1 percent, 0.8 percent and 2 percent, respectively. Given the current uncertainties on the BAO measurements of BOSS, these shifts correspond to 0.53σ, 0.5σ and 0.22σ for DA(z), H(z) and fσ8, respectively.

77 NANOSCIENCE AND NANOTECHNOLOGY↗